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Erica A. Douglas, Ph.D. - Publications

Affiliations: 
2011 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Electronics and Electrical Engineering, Solid State Physics
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 CareyIV PH, Ren F, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Baca AG, Pearton SJ. High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202. DOI: 10.1116/1.5135590  0.504
2020 Pearton SJ, Douglas EA, Shul RJ, Ren F. Plasma etching of wide bandgap and ultrawide bandgap semiconductors Journal of Vacuum Science & Technology A. 38: 020802. DOI: 10.1116/1.5131343  0.451
2020 Baca AG, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Kaplar RJ. Al-rich AlGaN based transistors Journal of Vacuum Science and Technology. 38: 20803. DOI: 10.1116/1.5129803  0.465
2019 Reza S, Klein BA, Baca AG, Armstrong AM, Allerman AA, Douglas EA, Kaplar RJ. High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study Japanese Journal of Applied Physics. 58: SCCD04. DOI: 10.7567/1347-4065/Ab07A5  0.422
2019 Armstrong AM, Klein BA, Allerman AA, Baca AG, Crawford MH, Podkaminer J, Perez CR, Siegal MP, Douglas EA, Abate VM, Leonard F. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate Photonics Research. 7: B24. DOI: 10.1364/Prj.7.000B24  0.457
2019 Kang T, Lo C, Liu L, Finch R, Ren F, Wang X, Douglas E, Pearton SJ, Hung S, Chang C. Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates Ecs Transactions. 41: 129-136. DOI: 10.1149/1.3629961  0.38
2019 Douglas EA, Klein B, Allerman AA, Baca AG, Fortune T, Armstrong AM. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate Journal of Vacuum Science & Technology B. 37: 021208. DOI: 10.1116/1.5066327  0.457
2019 Esteves G, Berg M, Wrasman KD, Henry MD, Griffin BA, Douglas EA. CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N Journal of Vacuum Science and Technology. 37: 21511. DOI: 10.1116/1.5065517  0.343
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074  0.58
2019 Martinez MJ, King MP, Baca AG, Allerman AA, Armstrong AA, Klein BA, Douglas EA, Kaplar RJ, Swanson SE. Radiation Response of AlGaN-Channel HEMTs Ieee Transactions On Nuclear Science. 66: 344-351. DOI: 10.1109/Tns.2018.2885526  0.437
2019 Baca AG, Klein BA, Wendt JR, Lepkowski SM, Nordquist CD, Armstrong AM, Allerman AA, Douglas EA, Kaplar RJ. RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates Ieee Electron Device Letters. 40: 17-20. DOI: 10.1109/Led.2018.2880429  0.421
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors Ieee Journal of the Electron Devices Society. 7: 444-452. DOI: 10.1109/Jeds.2019.2907306  0.544
2019 Klein BA, Douglas EA, Armstrong AM, Allerman AA, Abate VM, Fortune TR, Baca AG. Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment Applied Physics Letters. 114: 112104. DOI: 10.1063/1.5064543  0.498
2019 Armstrong AM, Klein BA, Baca AG, Allerman AA, Douglas EA, Colon A, Abate VM, Fortune TR. AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN Applied Physics Letters. 114: 052103. DOI: 10.1063/1.5058263  0.467
2019 Knisely K, Douglas E, Mudrick J, Rodriguez M, Kotula P. Thickness dependence of Al0.88Sc0.12N thin films grown on silicon Thin Solid Films. 675: 66-72. DOI: 10.1016/J.Tsf.2019.02.023  0.361
2019 Colón A, Douglas EA, Pope AJ, Klein BA, Stephenson CA, Heukelom MSV, Tauke-Pedretti A, Baca AG. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode Solid-State Electronics. 151: 47-51. DOI: 10.1016/J.Sse.2018.10.009  0.48
2019 Klein BA, Baca AG, Lepkowski SM, Nordquist CD, Wendt JR, Allerman AA, Armstrong AM, Douglas EA, Abate VM, Kaplar RJ. Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors Journal of Electronic Materials. 48: 5581-5585. DOI: 10.1007/S11664-019-07421-1  0.468
2018 Armstrong AM, Klein BA, Colon A, Allerman AA, Douglas EA, Baca AG, Fortune TR, Abate VM, Bajaj S, Rajan S. Ultra-wide band gap AlGaN polarization-doped field effect transistor Japanese Journal of Applied Physics. 57: 074103. DOI: 10.7567/Jjap.57.074103  0.481
2018 Henry MD, Young TR, Douglas EA, Griffin BA. Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36. DOI: 10.1116/1.5023918  0.372
2018 Armstrong AM, Klein B, Allerman AA, Douglas EA, Baca AG, Crawford MH, Pickrell GW, Sanchez CA. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors Journal of Applied Physics. 123: 114502. DOI: 10.1063/1.4997605  0.317
2017 Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Stephenson CA, Fortune TR, Kaplar RJ. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature Ecs Journal of Solid State Science and Technology. 6: Q161-Q165. DOI: 10.1149/2.0231712Jss  0.37
2017 Klein BA, Baca AG, Armstrong AM, Allerman AA, Sanchez CA, Douglas EA, Crawford MH, Miller MA, Kotula PG, Fortune TR, Abate VM. Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 6: S3067-S3071. DOI: 10.1149/2.0181711Jss  0.325
2017 Kaplar RJ, Allerman AA, Armstrong AM, Crawford MH, Dickerson JR, Fischer AJ, Baca AG, Douglas EA. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0111702Jss  0.397
2017 Baca AG, Armstrong AM, Allerman AA, Klein BA, Douglas EA, Sanchez CA, Fortune TR. High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 6: S3010-S3013. DOI: 10.1149/2.0041711Jss  0.341
2017 Douglas EA, Sanchez CA, Kaplar RJ, Allerman AA, Baca AG. Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN Journal of Vacuum Science and Technology. 35: 21305. DOI: 10.1116/1.4971245  0.36
2017 Katzenmeyer AM, McGuinness HJ, Starbuck A, Hood D, Pomerene A, Douglas E, Enache-Pommer E, DeRose CT. Volumetric Imaging and Characterization of Focusing Waveguide Grating Couplers Ieee Photonics Journal. 9: 1-9. DOI: 10.1109/Jphot.2017.2745901  0.321
2017 Douglas EA, Reza S, Sanchez C, Koleske D, Allerman A, Klein B, Armstrong AM, Kaplar RJ, Baca AG. Ohmic contacts to Al-rich AlGaN heterostructures Physica Status Solidi (a). 214: 1600842. DOI: 10.1002/Pssa.201600842  0.342
2016 Henry MD, Douglas EA. Chemical downstream etching of Ge, Si, and SiNx films Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4961944  0.361
2016 Baca AG, Armstrong AM, Allerman AA, Douglas EA, Sanchez CA, King MP, Coltrin ME, Nordquist CD, Fortune TR, Kaplar RJ. An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548395  0.403
2016 Baca AG, Armstrong AM, Allerman AA, Douglas EA, Sanchez CA, King MP, Coltrin ME, Fortune TR, Kaplar RJ. An AlN/Al0.85Ga0.15N high electron mobility transistor Applied Physics Letters. 109. DOI: 10.1063/1.4959179  0.504
2015 Douglas EA, Sheng JJ, Verley JC, Carroll MS. Argon-germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4921590  0.371
2014 Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/Jnn.2014.7939  0.404
2013 Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl  0.55
2013 Douglas EA, Gila BP, Abernathy CR, Ren F, Pearton SJ. GaN High Electron Mobility Transistor Degradation: Effect of RF Stress Ecs Transactions. 50: 261-272. DOI: 10.1149/05006.0261ecst  0.306
2013 Douglas EA, Bielejec E, Frenzer P, Yates BR, Pearton SJ, Lo C, Liu L, Kang T, Ren F. Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 021205. DOI: 10.1116/1.4792370  0.573
2013 Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019  0.558
2012 Pearton SJ, Lim WT, Douglas E, Cho H, Ren F. Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors Key Engineering Materials. 521: 141-151. DOI: 10.4028/Www.Scientific.Net/Kem.521.141  0.721
2012 Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/Ma5122498  0.576
2012 Ren F, Pearton SJ, Liu L, Kang T, Douglas EA, Chang CY, Lo C, Cullen DA, Zhou L, Smith DJ. The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1396. DOI: 10.1557/Opl.2012.354  0.604
2012 Douglas EA, Stevens J, Fishgrab K, Ford C, Shul RJ, Pearton SJ. Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 06FF06. DOI: 10.1116/1.4758765  0.384
2012 Cho H, Douglas EA, Gila BP, Craciun V, Lambers ES, Ren F, Pearton SJ. Band offsets in HfO2/InGaZnO4 heterojunctions Applied Physics Letters. 100: 012105. DOI: 10.1063/1.3673905  0.404
2012 Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/J.Microrel.2011.09.018  0.582
2011 Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F. Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Electrochemical and Solid State Letters. 14. DOI: 10.1149/2.019111Esl  0.491
2011 Kang TS, Lo CF, Liu L, Finch R, Ren F, Wang XT, Douglas E, Pearton SJ, Hung ST, Chang C. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 041202. DOI: 10.1116/1.3605298  0.541
2011 Liu L, Kang TS, Cullen DA, Zhou L, Kim J, Chang CY, Douglas EA, Jang S, Smith DJ, Pearton SJ, Johnson WJ, Ren F. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 32204. DOI: 10.1116/1.3581078  0.543
2011 Douglas EA, Ren F, Pearton SJ. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 020603. DOI: 10.1116/1.3567183  0.538
2011 Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/Tdmr.2010.2103314  0.561
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] Applied Physics Letters. 99: 059901. DOI: 10.1063/1.3617417  0.365
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340  0.424
2011 Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/J.Microrel.2010.09.024  0.541
2010 Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038  0.575
2010 Khanna R, Douglas EA, Norton DP, Pearton SJ, Ren F. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L43-L46. DOI: 10.1116/1.3467507  0.478
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Improvement in bias stability of amorphous- InGaZn O4 thin film transistors with Si Ox passivation layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 28: 116-119. DOI: 10.1116/1.3276774  0.725
2010 Douglas EA, Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, et al. Degradation of sub-micron Gate AlGaN/GaN HEMTs due to reverse gate bias Ieee International Integrated Reliability Workshop Final Report. 125-128. DOI: 10.1109/IIRW.2010.5706504  0.311
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753  0.726
2009 Douglas EA, Cheney DP, Chen KHP, Chang CP, Leu LP, Gila BP, Abernathy CR, Pearton SJ. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-04  0.53
2009 Cheney D, Gila B, Douglas EA, Ren F, Pearton S. A Comprehensive Approach to HEMT Reliability Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-03  0.665
2009 Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787  0.739
2009 Lim W, Douglas EA, Kim S-, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. High mobility InGaZnO4 thin-film transistors on paper Applied Physics Letters. 94: 72103. DOI: 10.1063/1.3086394  0.727
2008 Lim W, Douglas EA, Kim S, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape Applied Physics Letters. 93: 252103. DOI: 10.1063/1.3054167  0.731
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