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Stefano Ossicini, PhD. - Publications

Affiliations: 
Physics University of Modena and Reggio Emilia, Modena, Emilia-Romagna, Italy 
Area:
Theoretical Chemistry, Physics
Website:
http://www.nanomodelling.unimore.it/site/home/people/articolo47007021.html
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177 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Marri I, Grillo S, Amato M, Ossicini S, Pulci O. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 127: 1209-1219. PMID 36704663 DOI: 10.1021/acs.jpcc.2c07024  0.741
2021 Marri I, Ossicini S. Multiple exciton generation in isolated and interacting silicon nanocrystals. Nanoscale. PMID 34250528 DOI: 10.1039/d1nr01747k  0.362
2020 Marri I, Amato M, Bertocchi M, Ferretti A, Varsano D, Ossicini S. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics : Pccp. PMID 33164017 DOI: 10.1039/d0cp04013d  0.721
2020 Ossicini S, Marri I, Amato M, Palummo M, Canadell E, Rurali R. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions. PMID 32108213 DOI: 10.1039/C9Fd00085B  0.789
2019 Amato M, Ossicini S, Canadell E, Rurali R. Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano Letters. PMID 30608707 DOI: 10.1021/Acs.Nanolett.8B04083  0.756
2018 Marri I, Ossicini S. First-principle investigations of carrier multiplication in Si nanocrystals: A short review Arxiv: Materials Science. 1990: 20002. DOI: 10.1063/1.5047756  0.459
2018 Marri I, Amato M, Guerra R, Ossicini S. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications Physica Status Solidi (B). 255: 1700627. DOI: 10.1002/Pssb.201700627  0.749
2017 Bertocchi M, Degoli E, Véniard V, Luppi E, Ossicini S. Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry Nanoscience and Nanotechnology Letters. 9: 1102-1107. DOI: 10.1166/Nnl.2017.2445  0.709
2017 Marri I, Degoli E, Ossicini S. Doped and codoped silicon nanocrystals: The role of surfaces and interfaces Progress in Surface Science. 92: 375-408. DOI: 10.1016/J.Progsurf.2017.07.003  0.559
2017 Marri I, Degoli E, Ossicini S. First Principle Studies of B and P Doped Si Nanocrystals Physica Status Solidi (a). 215: 1700414. DOI: 10.1002/Pssa.201700414  0.539
2016 Amato M, Bertocchi M, Ossicini S. Work function bowing in Si1- xGex heterostructures: Ab initio results Journal of Applied Physics. 119. DOI: 10.1063/1.4942526  0.731
2016 Marri I, Govoni M, Ossicini S. First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes Solar Energy Materials and Solar Cells. 145: 162-169. DOI: 10.1016/J.Solmat.2015.07.013  0.734
2015 Palummo M, Hogan C, Ossicini S. Ab initio energy loss spectra of Si and Ge nanowires. Physical Chemistry Chemical Physics : Pccp. 17: 29085-9. PMID 26461466 DOI: 10.1039/C5Cp05074J  0.44
2015 Garcia-Castello N, Illera S, Prades JD, Ossicini S, Cirera A, Guerra R. Energetics and carrier transport in doped Si/SiO2 quantum dots. Nanoscale. 7: 12564-71. PMID 26144524 DOI: 10.1039/C5Nr02616D  0.507
2015 Marri I, Govoni M, Ossicini S. Carrier multiplication in silicon nanocrystals: ab initio results. Beilstein Journal of Nanotechnology. 6: 343-52. PMID 25821673 DOI: 10.3762/Bjnano.6.33  0.672
2015 Luppi E, Degoli E, Bertocchi M, Ossicini S, Véniard V. Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.075204  0.676
2015 Pouch S, Amato M, Bertocchi M, Ossicini S, Chevalier N, Mélin T, Hartmann JM, Renault O, Delaye V, Mariolle D, Borowik L. Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy Journal of Physical Chemistry C. 119: 26776-26782. DOI: 10.1021/Acs.Jpcc.5B09278  0.692
2015 Marri I, Govoni M, Ossicini S. Carrier multiplication in isolated and interacting silicon nanocrystals Nanotechnology and Photovoltaic Devices: Light Energy Harvesting With Group Iv Nanostructures. 177-202.  0.657
2015 Guerra R, Ossicini S. Ab initio calculations of the electronic and optical properties of silicon quantum dots embedded in different matrices Nanotechnology and Photovoltaic Devices: Light Energy Harvesting With Group Iv Nanostructures. 65-98.  0.339
2014 Marri I, Govoni M, Ossicini S. Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals. Journal of the American Chemical Society. 136: 13257-66. PMID 25092549 DOI: 10.1021/Ja5057328  0.708
2014 Bisri SZ, Degoli E, Spallanzani N, Krishnan G, Kooi BJ, Ghica C, Yarema M, Heiss W, Pulci O, Ossicini S, Loi MA. Determination of the electronic energy levels of colloidal nanocrystals using field-effect transistors and Ab-initio calculations. Advanced Materials (Deerfield Beach, Fla.). 26: 5639-45. PMID 24920491 DOI: 10.1002/Adma.201400660  0.397
2014 Bertocchi M, Luppi E, Degoli E, Véniard V, Ossicini S. Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices. The Journal of Chemical Physics. 140: 214705. PMID 24908033 DOI: 10.1063/1.4880756  0.748
2014 Guerra R, Ossicini S. Preferential positioning of dopants and co-dopants in embedded and freestanding Si nanocrystals. Journal of the American Chemical Society. 136: 4404-9. PMID 24564481 DOI: 10.1021/Ja5002357  0.472
2014 Amato M, Palummo M, Rurali R, Ossicini S. Silicon-germanium nanowires: chemistry and physics in play, from basic principles to advanced applications. Chemical Reviews. 114: 1371-412. PMID 24266833 DOI: 10.1021/Cr400261Y  0.721
2014 Amato M, Rurali R, Palummo M, Ossicini S. Understanding doping at the nanoscale: The case of codoped Si and Ge nanowires Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/39/394013  0.792
2014 Iori F, Ossicini S, Rurali R. Structural and electronic properties of Si1−xGex alloy nanowires Journal of Applied Physics. 116: 154301. DOI: 10.1063/1.4898130  0.458
2014 Iori F, Ossicini S, Rurali R. Conductance fluctuations in Si nanowires studied from first-principles Journal of Applied Physics. 116. DOI: 10.1063/1.4892673  0.451
2014 Summonte C, Allegrezza M, Bellettato M, Liscio F, Canino M, Desalvo A, López-Vidrier J, Hernández S, López-Conesa L, Estradé S, Peiró F, Garrido B, Löper P, Schnabel M, Janz S, ... ... Ossicini S, et al. Silicon nanocrystals in carbide matrix Solar Energy Materials and Solar Cells. 128: 138-149. DOI: 10.1016/J.Solmat.2014.05.003  0.468
2013 Garcia-Castello N, Illera S, Guerra R, Prades JD, Ossicini S, Cirera A. Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.075322  0.43
2013 Guerra R, Ossicini S. Role of strain in interacting silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165441  0.422
2013 Guerra R, Cigarini F, Ossicini S. Optical absorption and emission of silicon nanocrystals: From single to collective response Journal of Applied Physics. 113. DOI: 10.1063/1.4799394  0.411
2013 Marsili M, Botti S, Palummo M, Degoli E, Pulci O, Weissker HC, Marques MAL, Ossicini S, Del Sole R. Ab initio electronic gaps of Ge nanodots: The role of self-energy effects Journal of Physical Chemistry C. 117: 14229-14234. DOI: 10.1021/Jp3121269  0.478
2013 Löper P, Canino M, Lõpez-Vidrier J, Schnabel M, Schindler F, Heinz F, Witzky A, Bellettato M, Allegrezza M, Hiller D, Hartel A, Gutsch S, Hernández S, Guerra R, Ossicini S, et al. Silicon nanocrystals from high-temperature annealing: Characterization on device level Physica Status Solidi (a) Applications and Materials Science. 210: 669-675. DOI: 10.1002/Pssa.201200824  0.335
2013 Guerra R, Ossicini S. Silicon nanocrystals embedded in SiO2matrices: Ab initio results Nanostructured Semiconductors: From Basic Research to Applications. 393-452.  0.38
2012 Amato M, Ossicini S, Rurali R. Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles. Nano Letters. 12: 2717-21. PMID 22545577 DOI: 10.1021/Nl204313V  0.713
2012 Cazzanelli M, Bianco F, Borga E, Pucker G, Ghulinyan M, Degoli E, Luppi E, Véniard V, Ossicini S, Modotto D, Wabnitz S, Pierobon R, Pavesi L. Second-harmonic generation in silicon waveguides strained by silicon nitride. Nature Materials. 11: 148-54. PMID 22138793 DOI: 10.1038/Nmat3200  0.737
2012 Khriachtchev L, Ossicini S, Iacona F, Gourbilleau F. Silicon nanoscale materials: From theoretical simulations to photonic applications International Journal of Photoenergy. 2012. DOI: 10.1155/2012/872576  0.469
2012 Khriachtchev L, Ossicini S, Iacona F, Gourbilleau F. Photonic properties of silicon-based materials International Journal of Photoenergy. 2012. DOI: 10.1155/2012/202985  0.363
2012 Cazzanelli M, Bianco F, Pavesi L, Ghulinyan M, Pucker G, Modotto D, Wabnitz S, Pigozzo FM, Ossicini S, Degoli E, Luppi E, Véniard V. Second-order nonlinear silicon photonics Spie Newsroom. 1-4. DOI: 10.1117/2.1201203.004138  0.752
2012 Bertocchi M, Luppi E, Degoli E, Véniard V, Ossicini S. Large crystal local-field effects in second-harmonic generation of a Si/CaF 2 interface: An ab initio study Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.035309  0.737
2012 Amato M, Palummo M, Rurali R, Ossicini S. Optical absorption modulation by selective codoping of SiGe core-shell nanowires Journal of Applied Physics. 112. DOI: 10.1063/1.4768475  0.756
2012 Guerra R, Ippolito M, Meloni S, Ossicini S. The influence of silicon nanoclusters on the optical properties of a-SiN x samples: A theoretical study Applied Physics Letters. 100. DOI: 10.1063/1.4711017  0.448
2012 Govoni M, Marri I, Ossicini S. Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics Nature Photonics. 6: 672-679. DOI: 10.1038/Nphoton.2012.206  0.686
2012 Amato M, Palummo M, Ossicini S. Band structure analysis in SiGe nanowires Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 177: 705-711. DOI: 10.1016/J.Mseb.2011.10.008  0.77
2012 Amato M, Rurali R, Ossicini S. Doping of SiGe core-shell nanowires Journal of Computational Electronics. 11: 272-279. DOI: 10.1007/S10825-012-0394-Y  0.781
2011 Amato M, Ossicini S, Rurali R. Band-offset driven efficiency of the doping of SiGe core-shell nanowires. Nano Letters. 11: 594-8. PMID 21188962 DOI: 10.1021/Nl103621S  0.766
2011 Luppi E, Hübener H, Bertocchi M, Degoli E, Ossicini S, Véniard V. Second-harmonic generation spectroscopy from time-dependent density-functional theory Materials Research Society Symposium Proceedings. 1370: 29-34. DOI: 10.1557/Opl.2011.789  0.725
2011 Guerra R, Marsili M, Pulci O, Ossicini S. Local-field effects in silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075342  0.358
2011 Govoni M, Marri I, Ossicini S. Auger recombination in Si and GaAs semiconductors: Ab initio results Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075215  0.748
2010 Ossicini S, Amato M, Guerra R, Palummo M, Pulci O. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results. Nanoscale Research Letters. 5: 1637-1649. PMID 21076696 DOI: 10.1007/S11671-010-9688-9  0.785
2010 Palummo M, Amato M, Ossicini S. Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.073305  0.715
2010 Chiodo L, García-Lastra JM, Iacomino A, Ossicini S, Zhao J, Petek H, Rubio A. Self-energy and excitonic effects in the electronic and optical properties of TiO2 crystalline phases Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.045207  0.422
2010 Guerra R, Ossicini S. High luminescence in small Si/SiO2 nanocrystals: A theoretical study Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245307  0.492
2010 Palummo M, Iori F, Del Sole R, Ossicini S. Giant excitonic exchange splitting in Si nanowires: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.121303  0.383
2010 Pulci O, Degoli E, Iori F, Marsili M, Palummo M, Del Sole R, Ossicini S. Electronic and optical properties of Si and Ge nanocrystals: An ab initio study Superlattices and Microstructures. 47: 178-181. DOI: 10.1016/J.Spmi.2009.07.004  0.558
2010 Palummo M, Ossicini S, Del Sole R. Many-body effects on the electronic and optical properties of Si nanowires from ab initio approaches Physica Status Solidi (B) Basic Research. 247: 2089-2095. DOI: 10.1002/Pssb.200983958  0.512
2010 Amato M, Palummo M, Ossicini S. Segregation, quantum confinement effect and band offset for [110] SiGe NWs Physica Status Solidi (B) Basic Research. 247: 2096-2101. DOI: 10.1002/Pssb.200983931  0.753
2010 Guerra R, Degoli E, Marsili M, Pulci O, Ossicini S. Local-fields and disorder effects in free-standing and embedded Si nanocrystallites Physica Status Solidi (B) Basic Research. 247: 2113-2117. DOI: 10.1002/Pssb.200983926  0.524
2010 Bulutay C, Ossicini S. Electronic and Optical Properties of Silicon Nanocrystals Silicon Nanocrystals: Fundamentals, Synthesis and Applications. 5-41. DOI: 10.1002/9783527629954.ch2  0.342
2009 Iacomino A, Cantele G, Trani F, Ninno D, Marri I, Ossicini S. The role of the surface coverage on the structural and electronic properties of TiO2 nanocrystals Materials Research Society Symposium Proceedings. 1178: 121-126. DOI: 10.1557/Proc-1178-Aa09-34  0.368
2009 Amato M, Palummo M, Ossicini S. SiGe nanowires: Structural stability, quantum confinement, and electronic properties Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.235333  0.766
2009 Guerra R, Degoli E, Ossicini S. Size, oxidation, and strain in small Si/ SiO2 nanocrystals Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155332  0.528
2009 Amato M, Palummo M, Ossicini S. Reduced quantum confinement effect and electron-hole separation in SiGe nanowires Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.201302  0.777
2009 Guerra R, Marri I, Magri R, Martin-Samos L, Pulci O, Degoli E, Ossicini S. Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.155320  0.454
2009 Degoli E, Ossicini S. Engineering Quantum Confined Silicon Nanostructures: Ab-Initio Study of the Structural, Electronic and Optical Properties Advances in Quantum Chemistry. 58: 203-279. DOI: 10.1016/S0065-3276(09)00710-2  0.601
2009 Palummo M, Iori F, Del Sole R, Ossicini S. Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches Superlattices and Microstructures. 46: 234-239. DOI: 10.1016/J.Spmi.2008.12.026  0.514
2009 Guerra R, Marri I, Magri R, Martin-Samos L, Pulci O, Degoli E, Ossicini S. Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case Superlattices and Microstructures. 46: 246-252. DOI: 10.1016/J.Spmi.2008.10.020  0.465
2009 Trani F, Ninno D, Cantele G, Degoli E, Ossicini S. Impurity screening in silicon nanocrystals Physica E: Low-Dimensional Systems and Nanostructures. 41: 966-968. DOI: 10.1016/J.Physe.2008.08.028  0.411
2009 Iori F, Ossicini S. Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 41: 939-946. DOI: 10.1016/J.Physe.2008.08.010  0.525
2009 Degoli E, Guerra R, Iori F, Magri R, Marri I, Pulci O, Bisi O, Ossicini S. Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures Comptes Rendus Physique. 10: 575-586. DOI: 10.1016/J.Crhy.2008.09.003  0.531
2008 Ossicini S, Bisi O, Degoli E, Marri I, Iori F, Luppi E, Magri R, Poli R, Cantele G, Ninno D, Trani F, Marsili M, Pulci O, Olevano V, Gatti M, et al. First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping. Journal of Nanoscience and Nanotechnology. 8: 479-92. PMID 18464361 DOI: 10.1166/Jnn.2008.A009  0.7
2008 Ramos LE, Degoli E, Cantele G, Ossicini S, Ninno D, Furthmüller J, Bechstedt F. Optical absorption spectra of doped and codoped Si nanocrystallites Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.235310  0.401
2008 Iacomino A, Cantele G, Ninno D, Marri I, Ossicini S. Structural, electronic, and surface properties of anatase TiO2 nanocrystals from first principles Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075405  0.415
2008 Marri I, Ossicini S. Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(110) interface: A first principle study Solid State Communications. 147: 205-207. DOI: 10.1016/J.Ssc.2008.05.018  0.384
2008 Iori F, Degoli E, Palummo M, Ossicini S. Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures Superlattices and Microstructures. 44: 337-347. DOI: 10.1016/J.Spmi.2007.09.002  0.545
2007 Bruno M, Palummo M, Marini A, Del Sole R, Ossicini S. From Si nanowires to porous silicon: the role of excitonic effects. Physical Review Letters. 98: 036807. PMID 17358714 DOI: 10.1103/Physrevlett.98.036807  0.527
2007 Magri R, Degoli E, Iori F, Luppi E, Pulci O, Ossicini S, Cantele G, Trani F, Ninno D. Role of surface passivation and doping in silicon nanocrystals Journal of Computational Methods in Sciences and Engineering. 7: 219-232. DOI: 10.3233/Jcm-2007-73-404  0.678
2007 Iori F, Degoli E, Magri R, Marri I, Cantele G, Ninno D, Trani F, Pulci O, Ossicini S. Engineering silicon nanocrystals: Theoretical study of the effect of codoping with boron and phosphorus Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.085302  0.503
2007 Luppi E, Iori F, Magri R, Pulci O, Ossicini S, Degoli E, Olevano V. Excitons in silicon nanocrystallites: The nature of luminescence Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033303  0.643
2007 Ramos LE, Degoli E, Cantele G, Ossicini S, Ninno D, Furthmüller J, Bechstedt F. Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/46/466211  0.434
2007 Magri R, Iori F, Degoli E, Pulci O, Ossicini S. Codoping goes nano: Structural and optical properties of boron and phosphorus codoped silicon nanocrystals Aip Conference Proceedings. 963: 359-362. DOI: 10.1063/1.2836084  0.314
2007 Ossicini S, Degoli E, Iori F, Pulci O, Cantele G, Magri R, Bisi O, Trani F, Ninno D. Doping in silicon nanocrystals Surface Science. 601: 2724-2729. DOI: 10.1016/J.Susc.2006.12.083  0.439
2007 Bruno M, Palummo M, Ossicini S, Del Sole R. First-principles optical properties of silicon and germanium nanowires Surface Science. 601: 2707-2711. DOI: 10.1016/J.Susc.2006.12.021  0.496
2007 Palummo M, Bruno M, Pulci O, Luppi E, Degoli E, Ossicini S, Del Sole R. Ab-initio electronic and optical properties of low dimensional systems: From single particle to many-body approaches Surface Science. 601: 2696-2701. DOI: 10.1016/J.Susc.2006.12.019  0.586
2007 Iori F, Ossicini S, Degoli E, Luppi E, Poli R, Magri R, Cantele G, Trani F, Ninno D. Doping in silicon nanostructures Physica Status Solidi (a) Applications and Materials Science. 204: 1312-1317. DOI: 10.1002/Pssa.200674323  0.668
2006 Ninno D, Trani F, Cantele G, Hameeuw KJ, Iadonisi G, Degoli E, Ossicini S. Thomas-Fermi model of electronic screening in semiconductor nanocrystals Europhysics Letters. 74: 519-525. DOI: 10.1209/Epl/I2005-10544-9  0.345
2006 Ossicini S, Iori F, Degoli E, Luppi E, Magri R, Poli R, Cantele G, Trani F, Ninno D. Understanding doping in silicon nanostructures Ieee Journal On Selected Topics in Quantum Electronics. 12: 1585-1590. DOI: 10.1109/Jstqe.2006.884087  0.678
2006 Trani F, Ninno D, Cantele G, Iadonisi G, Hameeuw K, Degoli E, Ossicini S. Screening in semiconductor nanocrystals: Ab initio results and Thomas-Fermi theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.245430  0.373
2006 Iori F, Degoli E, Luppi E, Magri R, Marri I, Cantele G, Ninno D, Trani F, Ossicini S. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties Journal of Luminescence. 121: 335-339. DOI: 10.1016/J.Jlumin.2006.08.062  0.682
2005 Ossicini S, Iori F, Degoli E, Luppi E, Magri R, Cantele G, Trani F, Ninno D. P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 2005 Ieee International Conference On Group Iv Photonics. 2005: 60-62. DOI: 10.1109/GROUP4.2005.1516403  0.574
2005 Bruno M, Palummo M, Marini A, Del Sole R, Olevano V, Kholod AN, Ossicini S. Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.153310  0.427
2005 Cantele G, Degoli E, Luppi E, Magri R, Ninno D, Iadonisi G, Ossicini S. First-principles study of n- and p-doped silicon nanoclusters Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.113303  0.622
2005 Luppi M, Ossicini S. Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO 2: Beyond the quantum confinement effect Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.035340  0.499
2005 Ossicini S, Degoli E, Iori F, Luppi E, Magri R, Cantele G, Trani F, Ninno D. Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2119424  0.686
2005 Degoli E, Cantele G, Luppi E, Magri R, Ossicini S, Ninno D, Bisi O, Onida G, Gatti M, Incze A, Pulci O, Del Sole R. Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift Aip Conference Proceedings. 772: 859-860. DOI: 10.1063/1.1994377  0.575
2005 Luppi E, Degoli E, Cantele G, Ossicini S, Magri R, Ninno D, Bisi O, Pulci O, Onida G, Gatti M, Incze A, Del Sole R. The electronic and optical properties of silicon nanoclusters: Absorption and emission Optical Materials. 27: 1008-1013. DOI: 10.1016/J.Optmat.2004.08.054  0.63
2005 Degoli E, Ossicini S, Cantele G, Luppi E, Magri R, Ninno D, Bisi O. Formation energies of silicon nanocrystals: Role of dimension and passivation Physica Status Solidi C: Conferences. 2: 3354-3358. DOI: 10.1002/Pssc.200561166  0.595
2005 Cantele G, Degoli E, Luppi E, Magri R, Ninno D, Bisi O, Ossicini S, Iadonisi G. Electronic, structural and optical properties of hydrogenated silicon nanocrystals: The role of the excited states Physica Status Solidi C: Conferences. 2: 3263-3267. DOI: 10.1002/Pssc.200461139  0.625
2004 Kholod AN, Shaposhnikov VL, Sobolev N, Borisenko VE, D’Avitaya FA, Ossicini S. Erratum: Orientation effects in the electronic and optical properties of germanium quantum wires [Phys. Rev. B70, 035317 (2004)] Physical Review B. 70. DOI: 10.1103/Physrevb.70.249906  0.38
2004 Kholod AN, Shaposhnikov VL, Sobolev N, Borisenko VE, D'Avitaya FA, Ossicini S. Orientation effects in the electronic and optical properties of germanium quantum wires Physical Review B - Condensed Matter and Materials Physics. 70: 035317-1-035317-5. DOI: 10.1103/Physrevb.70.035317  0.436
2004 Degoli E, Cantele G, Luppi E, Magri R, Ninno D, Bisi O, Ossicini S. Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state Physical Review B - Condensed Matter and Materials Physics. 69: 155411-1-155411-10. DOI: 10.1103/Physrevb.69.155411  0.638
2003 Luppi M, Ossicini S. Isolated and embedded silicon based nanodots: The role of surface oxygen Materials Research Society Symposium - Proceedings. 737: 775-780. DOI: 10.1557/Proc-737-F10.5  0.323
2003 Ossicini S, Magri R, Degoli E, Luppi M, Luppi E. Surface and confinement effects on the optical and structural properties of silicon nanocrystals Proceedings of Spie - the International Society For Optical Engineering. 5222: 1-11. DOI: 10.1117/12.508481  0.552
2003 Daldosso N, Luppi M, Ossicini S, Degoli E, Magri R, Dalba G, Fornasini P, Grisenti R, Rocca F, Pavesi L, Boninelli S, Priolo F, Spinella C, Iacona F. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 Physical Review B - Condensed Matter and Materials Physics. 68: 853271-853278. DOI: 10.1103/Physrevb.68.085327  0.494
2003 Luppi M, Ossicini S. Multiple Si=0 bonds at the silicon cluster surface Journal of Applied Physics. 94: 2130-2131. DOI: 10.1063/1.1586954  0.454
2003 Dal Negro L, Cazzanelli M, Pavesi L, Ossicini S, Pacifici D, Franzò G, Priolo F, Iacona F. Dynamics of stimulated emission in silicon nanocrystals Applied Physics Letters. 82: 4636-4638. DOI: 10.1063/1.1586779  0.333
2003 Rosini M, Jacoboni C, Ossicini S. Semiclassical and Quantum Transport in Si/SiO2 Superlattices Journal of Computational Electronics. 2: 417-422. DOI: 10.1023/B:Jcel.0000011463.80312.Fa  0.44
2003 Rosini M, Jacoboni C, Ossicini S. Monte Carlo analysis of electron heating in Si/SiO2 superlattices Physica E: Low-Dimensional Systems and Nanostructures. 16: 455-460. DOI: 10.1016/S1386-9477(02)00656-2  0.398
2003 Luppi M, Ossicini S. Oxygen role on the optoelectronic properties of silicon nanodots Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 101: 34-38. DOI: 10.1016/S0921-5107(02)00700-6  0.445
2003 Kholod AN, Ossicini S, Borisenko VE, Arnaud d'Avitaya F. Optical properties of Ge and Si nanosheets - Confinement and symmetry effects Surface Science. 527: 30-40. DOI: 10.1016/S0039-6028(03)00054-2  0.503
2003 Luppi M, Ossicini S. Oxygen role on the structural and optoelectronic properties of silicon nanodots Physica Status Solidi (a) Applied Research. 197: 251-256. DOI: 10.1002/Pssa.200306510  0.498
2003 Daldosso N, Luppi M, Dalba G, Pavesi L, Rocca F, Priolo F, Franzò G, Iacona F, Degoli E, Magri R, Ossicini S. Experimental and Theoretical Joint Study on the Electronic and Structural Properties of Silicon Nanocrystals Embedded in SiO2: Active Role of the Interface Region Materials Research Society Symposium - Proceedings. 770: 87-92.  0.353
2003 Degoli E, Ossicini S, Luppi M, Luppi E, Magri R, Cantele G, Ninno D. Electronic and Optical Properties of Silicon Nanocrystals: Structural Effects Materials Research Society Symposium - Proceedings. 770: 57-62.  0.584
2002 Rosini M, Jacoboni C, Ossicini S. Monte Carlo simulation of electron transport in Si/SiO2 superlattices Proceedings of Spie - the International Society For Optical Engineering. 4808: 170-179. DOI: 10.1117/12.452215  0.301
2002 Ossicini S, Degoli E, Luppi M, Magri R. Si nanostructures embedded in SiO2: Electronic and optical properties Proceedings of Spie - the International Society For Optical Engineering. 4808: 73-84. DOI: 10.1117/12.452043  0.413
2002 Rosini M, Jacoboni C, Ossicini S. Monte Carlo simulation of electron transport in Si/SiO2 superlattices: Vertical transport enhanced by a parallel field Physical Review B - Condensed Matter and Materials Physics. 66: 1553321-15533210. DOI: 10.1103/Physrevb.66.155332  0.445
2002 Filonov AB, Ossicini S, Bassani F, Arnaud D'Avitaya F. Effect of oxygen on the optical properties of small silicon pyramidal clusters Physical Review B - Condensed Matter and Materials Physics. 65: 1953171-1953179. DOI: 10.1103/Physrevb.65.195317  0.401
2002 Kholod AN, Ossicini S, Borisenko VE, D'Avitaya FA. True direct gap absorption in germanium quantum films Physical Review B - Condensed Matter and Materials Physics. 65: 1153151-1153154. DOI: 10.1103/Physrevb.65.115315  0.33
2001 Prakash GV, Daldosso N, Degoli E, Iacona F, Cazzanelli M, Gaburro Z, Pucker G, Dalba P, Rocca F, Ceretta Moreira E, Franzò G, Pacifici D, Priolo F, Arcangeli C, Filonov AB, ... Ossicini S, et al. Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition. Journal of Nanoscience and Nanotechnology. 1: 159-68. PMID 12914047 DOI: 10.1166/jnn.2001.024  0.388
2001 Magri R, Ossicini S. In-plane anisotropy of the optical properties of (In0.5Ga0.5As)n/(InP)n superlattices Physical Review B - Condensed Matter and Materials Physics. 63: 1653031-1653039. DOI: 10.1103/Physrevb.63.165303  0.374
2001 Degoli E, Ossicini S. Role of defects in Si/SiO2 quantum wells Optical Materials. 17: 95-98. DOI: 10.1016/S0925-3467(01)00027-1  0.498
2001 Ghidoni C, Magri R, Ossicini S. The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices Surface Science. 489: 59-71. DOI: 10.1016/S0039-6028(01)01128-1  0.401
2001 Said M, Zid FB, Bertoni CM, Ossicini S. First-principles electronic structure of rare-earth arsenides European Physical Journal B. 23: 191-199. DOI: 10.1007/S100510170068  0.399
2001 Ossicini S. The optoelectronic properties of silicon nanostructures: The role of the interfaces Proceedings of the International Semiconductor Conference, Cas. 1: 23-26.  0.33
2000 Degoli E, Ossicini S, Barbato D, Luppi M, Pettenati E. Symmetry and passivation dependence of the optical properties of nanocrystalline silicon structures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 69: 444-448. DOI: 10.1016/S0921-5107(99)00241-X  0.507
2000 Bisi O, Ossicini S, Pavesi L. Porous silicon: A quantum sponge structure for silicon based optoelectronics Surface Science Reports. 38: 1-126. DOI: 10.1016/S0167-5729(99)00012-6  0.501
2000 Degoli E, Ossicini S. The electronic and optical properties of Si/SiO2 superlattices: Role of confined and defect states Surface Science. 470: 32-42. DOI: 10.1016/S0039-6028(00)00832-3  0.531
2000 Degoli E, Luppi M, Ossicini S. From undulating Si quantum wires to Si quantum dots: a model for porous silicon Physica Status Solidi (a) Applied Research. 182: 301-306. DOI: 10.1002/1521-396X(200011)182:1<301::Aid-Pssa301>3.0.Co;2-N  0.478
1998 Magri R, Ossicini S. Role of symmetry reduction in the polarization dependence of the optical absorption in non-common-atom superlattices Physical Review B - Condensed Matter and Materials Physics. 58: R1742-R1745. DOI: 10.1103/Physrevb.58.R1742  0.301
1998 Degoli E, Ossicini S. First-principles optical properties of Si/CaF2 multiple quantum wells Physical Review B - Condensed Matter and Materials Physics. 57: 14776-14782. DOI: 10.1103/Physrevb.57.14776  0.481
1998 Degoli E, Ossicini S. Optical properties of Si/CaF2 superlattices Journal of Luminescence. 80: 411-415. DOI: 10.1016/S0022-2313(98)00139-2  0.512
1998 Ossicini S. Optical properties of confined Si structures Physica Status Solidi (a) Applied Research. 170: 377-390. DOI: 10.1002/(Sici)1521-396X(199812)170:2<377::Aid-Pssa377>3.0.Co;2-7  0.495
1998 Magri R, Ossicini S. Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-Inp superlattices Physica Status Solidi (a) Applied Research. 170: 331-336. DOI: 10.1002/(Sici)1521-396X(199812)170:2<331::Aid-Pssa331>3.0.Co;2-A  0.305
1997 Ossicini S, Bisi O. The optical transition in a Si wire passivated by H and O-H Solid State Phenomena. 54: 127-134. DOI: 10.4028/Www.Scientific.Net/Ssp.54.127  0.342
1997 Caldas MJ, Baierle RJ, Molinari E, Ossicini S. Optically-induced defects in Si-H nanoparticles Materials Science Forum. 258: 11-18. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.11  0.384
1997 Ossicini S, Bertoni CM, Biagini M, Lugli A, Roma G, Bisi O. Optical properties of isolated and interacting silicon quantum wires Thin Solid Films. 297: 154-162. DOI: 10.1016/S0040-6090(96)09442-4  0.505
1997 Baierle RJ, Caldas MJ, Molinari E, Ossicini S. Optical emission from small Si particles Solid State Communications. 102: 545-549. DOI: 10.1016/S0038-1098(97)00042-2  0.458
1996 Dorigoni L, Bisi O, Bernardini F, Ossicini S. Electron states and luminescence transition in porous silicon. Physical Review. B, Condensed Matter. 53: 4557-4564. PMID 9984013 DOI: 10.1103/Physrevb.53.4557  0.523
1996 Ossicini S, Biagini M, Bertoni CM, Roma G, Bisi O. Ab-Initio Calculation of the Optical Properties of Silicon Quantum Wires Mrs Proceedings. 452. DOI: 10.1557/Proc-452-63  0.51
1996 Ossicini S, Dorigoni L, Bisi O. Luminescence in porous silicon: The role of confinement and passivation Applied Surface Science. 102: 395-398. DOI: 10.1016/0169-4332(96)00085-2  0.51
1996 Dorigoni L, Bisi O, Bernardini F, Ossicini S. The luminescence transition in porous silicon: The nature of the electronic states Thin Solid Films. 276: 261-264. DOI: 10.1016/0040-6090(95)08091-0  0.486
1996 Dorigoni L, Pavesi L, Bisi O, Calliari L, Anderle M, Ossicini S. Auger lineshape analysis of porous silicon: Experiment and theory Thin Solid Films. 276: 244-247. DOI: 10.1016/0040-6090(95)08063-5  0.514
1996 Said M, Bertoni CM, Fasolino A, Ossicini S. Electronic structure of rare earth arsenide/gallium arsenide superlattices Solid State Communications. 100: 477-480. DOI: 10.1016/0038-1098(96)00453-X  0.429
1996 Ossicini S, Bisi O. The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation Il Nuovo Cimento D. 18: 1121-1129. DOI: 10.1007/Bf02464690  0.5
1995 Biagini M, Calandra C, Ossicini S. Electronic structure of PrBa2Cu3O7: A local-spin-density approximation with on-site Coulomb interaction. Physical Review. B, Condensed Matter. 52: 10468-10473. PMID 9980100 DOI: 10.1103/Physrevb.52.10468  0.301
1995 Biagini M, Calandra C, Ossicini S. Hole filling and interlayer coupling in ybascugoy/prbascugoy superlattices Epl. 31: 311-317. DOI: 10.1209/0295-5075/31/5-6/012  0.322
1995 Arnaud D’Avitaya F, Vervoort L, Bassani F, Ossicini S, Fasolino A, Bernardini F. Light emission at room temperature from si/caf2multilayers Epl. 31: 25-30. DOI: 10.1209/0295-5075/31/1/005  0.502
1995 Ossicini S, Fasolino A, Bernardini F. Si/CaF2 Superlattices. A Direct Gap Structure Due to Interface State Coupling Physica Status Solidi (B). 190: 117-122. DOI: 10.1002/Pssb.2221900118  0.49
1994 Manghi F, Calandra C, Ossicini S. Quasiparticle band structure of NiO: The Mott-Hubbard picture regained. Physical Review Letters. 73: 3129-3132. PMID 10057295 DOI: 10.1103/Physrevlett.73.3129  0.32
1994 Ossicini S, Fasolino A, Bernardini F. Gap opening in ultrathin Si layers: Role of confined and interface states. Physical Review Letters. 72: 1044-1047. PMID 10056603 DOI: 10.1103/Physrevlett.72.1044  0.408
1994 Bernardini F, Ossicini S, Fasolino A. First-principles investigation of the electronic structure of Si-based layered structures Surface Science. 307: 984-988. DOI: 10.1016/0039-6028(94)91528-8  0.481
1994 Fasolino A, Ossicini S, Bernardini F. Electronic structure of thin Si layers in CaF2: Hybridization versus confinement Solid State Electronics. 37: 1145-1147. DOI: 10.1016/0038-1101(94)90375-1  0.499
1992 Ossicini S. Theoretical approaches to the Schottky barrier problem Applied Surface Science. 56: 290-300. DOI: 10.1016/0169-4332(92)90247-U  0.381
1992 Buongiorno Nardelli M, Finocchi F, Palummo M, Di Felice R, Bertoni CM, Bernardini F, Ossicini S. Hydrogen covered Si(111) surfaces Surface Science. 269: 879-885. DOI: 10.1016/0039-6028(92)91364-H  0.398
1992 Arcangeli C, Ossicini S, Bisi O. The electronic properties of the CaF2Si(111) system: from monolayer coverage to solid-solid interface Surface Science. 269: 743-747. DOI: 10.1016/0039-6028(92)91343-A  0.458
1992 Ossicini S, Bernardini F. Fermi-level pinning and interface states at PbSi(111) interface Solid State Communications. 82: 863-866. DOI: 10.1016/0038-1098(92)90709-I  0.375
1991 Ossicini S, Arcangeli C, Bisi O. Chemical bond and electronic states at the CaF2-Si(111) and Ca-Si(111) interfaces. Physical Review. B, Condensed Matter. 43: 9823-9830. PMID 9996684 DOI: 10.1103/Physrevb.43.9823  0.415
1991 Ossicini S, Arcangeli C, Bisi O. Initial formation of the CaF2 interface: a theoretical study Surface Science. 251: 462-466. DOI: 10.1016/0039-6028(91)91035-V  0.439
1990 Ossicini S, Bisi O, Bertoni CM. Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces. Physical Review. B, Condensed Matter. 42: 5735-5743. PMID 9996159 DOI: 10.1103/Physrevb.42.5735  0.487
1990 Ossicini S, Arcangeli C, Bisi O. Covalency in the adsorption of Na on Si(111). Physical Review. B, Condensed Matter. 42: 7671-7674. PMID 9994925 DOI: 10.1103/Physrevb.42.7671  0.352
1990 Ossicini S, Bisi O, Bertoni CM. The electronic properties of Si{single bond}NiSi2(111) epitaxial interfaces Vacuum. 41: 681-683. DOI: 10.1016/0042-207X(90)90449-9  0.491
1990 Finocchi F, Bertoni CM, Ossicini S. Simple metal surfaces and image potential states Vacuum. 41: 535-537. DOI: 10.1016/0042-207X(90)90408-Q  0.301
1989 Ossicini S, Bisi O. Selfconsistent LMTO calculation for semiconductor clean surfaces Surface Science. 211: 572-577. DOI: 10.1016/0039-6028(89)90816-9  0.456
1987 Ossicini S, Bisi O. The Electronic Properties of Silicon-Silicide Epitaxial Interfaces Mrs Proceedings. 102. DOI: 10.1557/Proc-102-315  0.464
1987 Ossicini S, Bertoni CM. Image potential at metal surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 727-730. DOI: 10.1116/1.574285  0.331
1987 Ossicini S, Finocchi F, Bertoni CM. Electron density profiles at charged metal surfaces in the weighted density approximation Surface Science. 189: 776-781. DOI: 10.1016/S0039-6028(87)80513-7  0.337
1987 Bisi O, Ossicini S. First principle investigation of the electronic properties of silicon-silicide interfaces Surface Science. 189: 285-293. DOI: 10.1016/S0039-6028(87)80444-2  0.444
1986 Ossicini S. Interaction potential between rare-gas atoms and metal surfaces. Physical Review. B, Condensed Matter. 33: 873-878. PMID 9938346 DOI: 10.1103/Physrevb.33.873  0.315
1986 Ossicini S, Gies P, Bertoni CM. Image plane for surface potential Epl. 1: 661-667. DOI: 10.1209/0295-5075/1/12/008  0.339
1986 Ossicini S, Bertoni CM, Gies P. Non-local exchange and correlation in the jellium model of surfaces Surface Science. 178: 244-255. DOI: 10.1016/0039-6028(86)90299-2  0.363
1985 Ossicini S, Bertoni CM. Density-functional calculation of atomic structure with nonlocal exchange and correlation. Physical Review. A. 31: 3550-3556. PMID 9895930 DOI: 10.1103/Physreva.31.3550  0.332
1985 Ossicini S. Self-trapped exciton bubble size growth in solid neon Journal of Physics and Chemistry of Solids. 46: 123-126. DOI: 10.1016/0022-3697(85)90206-9  0.36
1981 Ossicini S, Forstmann F. Matrix effects in the optical spectra of alkali atoms trapped in Ar, Kr, and Xe matrices: A pseudopotential calculation The Journal of Chemical Physics. 75: 2076-2079. DOI: 10.1063/1.442327  0.335
1980 Forstmann F, Ossicini S. The influence of a rare-gas matrix on the electronic levels of isolated atoms The Journal of Chemical Physics. 73: 5997-6002. DOI: 10.1063/1.440133  0.339
1979 Casula F, Ossicini S, Selloni A. Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method Solid State Communications. 30: 309-313. DOI: 10.1016/0038-1098(79)90083-8  0.434
1978 Casula F, Ossicini S, Selloni A. Electronic vacancy states in silicon by the chemical pseudopotential method Solid State Communications. 28: 141-145. DOI: 10.1016/0038-1098(78)90345-9  0.44
1977 Selloni A, Ossicini S, Tosatti E. Chemical pseudopotential and semiconductor surface states Il Nuovo Cimento B Series 11. 39: 786-790. DOI: 10.1007/Bf02725824  0.366
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