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Jing Zhang - Publications

Affiliations: 
2009-2013 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Song N, Tong H, Ma J, Zhang J. Case Series of Laser Therapy of Eyelid Peripunctal Benign Tumor. Photobiomodulation, Photomedicine, and Laser Surgery. PMID 34597195 DOI: 10.1089/photob.2021.0007  0.415
2020 Tong H, Zhang J, Li C, Fu Y, Zhang T. 1064 nm Nd:YAG laser treatment of melanocytic nevi of the external auditory canal: a retrospective study of 15 cases. Lasers in Medical Science. PMID 32533471 DOI: 10.1007/s10103-020-03034-x  0.435
2020 Hartensveld M, Melanson B, Zhang J. Ultraviolet Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-1. DOI: 10.1109/Jphot.2020.3020384  0.442
2020 Hartensveld M, Melanson B, Zhang J. Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-8. DOI: 10.1109/Jphot.2020.2992278  0.433
2020 Liu C, Zhang J. Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate Journal of Applied Physics. 127: 205702. DOI: 10.1063/1.5143723  0.429
2019 Wu J, Wu H, Wang Y, Chen Y, Guo B, Cao G, Wu X, Yu J, Wu J, Zhu D, Guo Y, Yuan H, Hu F, Zhang J. Tolerability and Pharmacokinetics of Contezolid at Therapeutic and Supratherapeutic Doses in Healthy Chinese Subjects, and Assessment of Contezolid Dosing Regimens Based on Pharmacokinetic/Pharmacodynamic Analysis. Clinical Therapeutics. PMID 31126694 DOI: 10.1016/j.clinthera.2019.04.025  0.472
2019 Zhang J, Wu K, Xu T, Wu J, Li P, Wang H, Wu H, Wu G. Epigallocatechin-3-gallate enhances the osteoblastogenic differentiation of human adipose-derived stem cells. Drug Design, Development and Therapy. 13: 1311-1321. PMID 31114166 DOI: 10.2147/DDDT.S192683  0.479
2019 Hartensveld M, Zhang J. Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor Ieee Electron Device Letters. 40: 427-430. DOI: 10.1109/Led.2019.2895846  0.364
2019 Hartensveld M, Liu C, Zhang J. Proposal and Realization of Vertical GaN Nanowire Static Induction Transistor Ieee Electron Device Letters. 40: 259-262. DOI: 10.1109/Led.2018.2886246  0.34
2019 Hartensveld M, Ouin G, Liu C, Zhang J. Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes Journal of Applied Physics. 126: 183102. DOI: 10.1063/1.5123171  0.372
2018 Ooi YK, Zhang J. Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate Ieee Photonics Journal. 10: 1-13. DOI: 10.1109/Jphot.2018.2847226  0.361
2018 Liu C, Zhang J. Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters Aip Advances. 8: 85125. DOI: 10.1063/1.5048597  0.41
2018 Liu C, Ooi YK, Islam SM, Xing H(, Jena D, Zhang J. 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes Applied Physics Letters. 112: 011101. DOI: 10.1063/1.5007835  0.409
2017 Ooi YK, Chowdhury RR, Zhang J. Investigation of light extraction efficiency comparison of AlGaN-based deep- and mid-ultraviolet flip-chip light-emitting diodes with patterned sapphire substrate Proceedings of Spie. 10098. DOI: 10.1117/12.2252794  0.414
2017 Ooi YK, Ugras C, Liu C, Hartensveld M, Gandhi S, Cormier D, Zhang J. Integration of 3D printed lens with InGaN light-emitting diodes with enhanced light extraction efficiency Proceedings of Spie. 10115: 1011508. DOI: 10.1117/12.2252734  0.364
2017 Liu C, Ooi YK, Islam SM, Xing HG, Jena D, Zhang J. Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes Proceedings of Spie. 10104. DOI: 10.1117/12.2252487  0.448
2017 Ooi YK, Liu C, Zhang J. Analysis of Polarization-Dependent Light Extraction and Effect of Passivation Layer for 230-nm AlGaN Nanowire Light-Emitting Diodes Ieee Photonics Journal. 9: 1-12. DOI: 10.1109/Jphot.2017.2710325  0.362
2017 Liu C, Ooi YK, Islam SM, Verma J, Xing H(, Jena D, Zhang J. Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes Applied Physics Letters. 110: 071103. DOI: 10.1063/1.4976203  0.414
2016 Liu C, Ooi YK, Zhang J. Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers Proceedings of Spie. 9767. DOI: 10.1117/12.2212923  0.399
2016 Liu C, Ooi YK, Zhang J. Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers Journal of Applied Physics. 119: 83102. DOI: 10.1063/1.4942524  0.426
2015 Ooi YK, Zhang J. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates Aip Advances. 5: 57168. DOI: 10.1063/1.4922008  0.441
2013 Zhang J, Tansu N. Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers Ieee Photonics Journal. 5. DOI: 10.1117/12.909165  0.618
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 19: 8400106-8400106. DOI: 10.1109/Jstqe.2012.2218093  0.725
2013 Liu G, Zhang J, Tan CK, Tansu N. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2255028  0.695
2013 Zhang J, Tansu N. Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2247587  0.604
2013 Zhu P, Liu G, Zhang J, Tansu N. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays Ieee/Osa Journal of Display Technology. 9: 317-323. DOI: 10.1109/Jdt.2013.2250253  0.764
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252  0.787
2013 Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342  0.762
2013 Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541  0.753
2013 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605  0.718
2012 Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633  0.743
2012 Liu G, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao H, Tansu N. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Journal of Crystal Growth. 340: 66-73. DOI: 10.1016/J.Jcrysgro.2011.12.037  0.71
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571 DOI: 10.1364/Oe.19.00A991  0.759
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342  0.768
2011 Zhang J, Tong H, Herbsommer JA, Tansu N. Analysis of thermoelectric properties of AlInN semiconductor alloys Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.875995  0.622
2011 Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901  0.78
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875125  0.702
2011 Zhang J, Zhao H, Tansu N. Gain characteristics of deep UV AlGaN quantum wells lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875079  0.688
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1109/Photonics.2010.5698996  0.747
2011 Tansu N, Zhang J, Zhao H. Physics of novel III-nitride gain media for visible and ultraviolet lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 509-510. DOI: 10.1109/Pho.2011.6110645  0.654
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 17: 48-53. DOI: 10.1109/Jstqe.2010.2049343  0.722
2011 Zhang J, Tansu N. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes Journal of Applied Physics. 110. DOI: 10.1063/1.3668117  0.583
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of fast and slow decays in InGaN/GaN quantum wells Applied Physics Letters. 99: 081104. DOI: 10.1063/1.3627166  0.721
2011 Zhang J, Kutlu S, Liu G, Tansu N. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3624761  0.625
2011 Zhang J, Zhao H, Tansu N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Applied Physics Letters. 98. DOI: 10.1063/1.3583442  0.688
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628  0.703
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents Journal of Applied Physics. 109. DOI: 10.1063/1.3553880  0.702
2010 Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/Photonics.2010.5698997  0.73
2010 Zhang J, Zhao H, Tansu N. Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 63-64. DOI: 10.1109/Photonics.2010.5698758  0.687
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887  0.758
2010 Tong H, Zhang J, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition Applied Physics Letters. 97: 112105. DOI: 10.1063/1.3489086  0.691
2010 Zhang J, Zhao H, Tansu N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. 97. DOI: 10.1063/1.3488825  0.683
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