Year |
Citation |
Score |
2014 |
Ma J, Ni J, Zhang J, Liu Q, Hou G, Chen X, Zhang X, Geng X, Zhao Y. The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells Solar Energy Materials and Solar Cells. 120: 635-641. DOI: 10.1016/J.Solmat.2013.10.007 |
0.738 |
|
2013 |
Chen X, Wang F, Geng X, Huang Q, Zhao Y, Zhang X. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells Thin Solid Films. 542: 343-347. DOI: 10.1016/J.Tsf.2013.07.015 |
0.738 |
|
2013 |
Cao Y, Zhang J, Li C, Li T, Huang Z, Ni J, Hu Z, Geng X, Zhao Y. Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell Solar Energy Materials and Solar Cells. 114: 161-164. DOI: 10.1016/J.Solmat.2013.03.004 |
0.705 |
|
2013 |
Ma J, Ni J, Zhang J, Huang Z, Hou G, Chen X, Zhang X, Geng X, Zhao Y. Improvement of solar cells performance by boron doped amorphous silicon carbide/nanocrystalline silicon hybrid window layers Solar Energy Materials and Solar Cells. 114: 9-14. DOI: 10.1016/J.Solmat.2013.02.013 |
0.712 |
|
2013 |
Zhang C, Chen X, Geng X, Tian C, Huang Q, Zhao Y, Zhang X. Temperature-dependent growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering Applied Surface Science. 274: 371-377. DOI: 10.1016/J.Apsusc.2013.03.069 |
0.728 |
|
2012 |
Chen X, Li L, Wang F, Ni J, Geng X, Zhang X, Zhao Y. Natively textured surface aluminum-doped zinc oxide transparent conductive layers for thin film solar cells via pulsed direct-current reactive magnetron sputtering Thin Solid Films. 520: 5392-5399. DOI: 10.1016/J.Tsf.2012.03.120 |
0.758 |
|
2012 |
Zhang H, Zhang X, Hou G, Wei C, Sun J, Geng X, Xiong S, Zhao Y. The microstructure and optical properties of p-type microcrystalline silicon thin films characterized by ex-situ spectroscopic ellipsometry Thin Solid Films. 521: 17-21. DOI: 10.1016/J.Tsf.2012.03.081 |
0.826 |
|
2012 |
Yan C, Chen X, Wang F, Sun J, Zhang D, Wei C, Zhang X, Zhao Y, Geng X. Textured surface ZnO:B/(hydrogenated gallium-doped ZnO) and (hydrogenated gallium-doped ZnO)/ZnO:B transparent conductive oxide layers for Si-based thin film solar cells Thin Solid Films. 521: 249-252. DOI: 10.1016/J.Tsf.2011.10.203 |
0.712 |
|
2012 |
Chen X, Wang F, Geng X, Zhang D, Wei C, Zhang X, Zhao Y. New natively textured surface Al-doped ZnO-TCOs for thin film solar cells via magnetron sputtering Materials Research Bulletin. 47: 2008-2011. DOI: 10.1016/J.Materresbull.2012.04.009 |
0.68 |
|
2012 |
Wang F, Chen X, Geng X, Zhang D, Wei C, Huang Q, Zhang X, Zhao Y. Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering Applied Surface Science. 258: 9005-9010. DOI: 10.1016/J.Apsusc.2012.05.138 |
0.756 |
|
2012 |
Chen X, Wang F, Geng X, Zhang D, Wei C, Zhang X, Zhao Y. Natively textured surface Al-doped ZnO-TCO layers with gradual oxygen growth for thin film solar cells via magnetron sputtering Applied Surface Science. 258: 4092-4096. DOI: 10.1016/J.Apsusc.2011.12.061 |
0.695 |
|
2011 |
Zhang X, Wang G, Zheng X, Xu S, Wei C, Sun J, Geng X, Xiong S, Zhao Y. Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System Mrs Proceedings. 1321. DOI: 10.1557/Opl.2011.929 |
0.784 |
|
2011 |
Zhang X, Wang G, Xu S, Xiong S, Geng X, Zhao Y. Light-induced Open-circuit Voltage Increase in Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells Mrs Proceedings. 1321. DOI: 10.1557/Opl.2011.816 |
0.762 |
|
2011 |
Xu S, Zhang X, Li Y, Xiong S, Geng X, Zhao Y. Improve silane utilization for silicon thin film deposition at high rate Thin Solid Films. 520: 694-696. DOI: 10.1016/J.Tsf.2011.06.069 |
0.794 |
|
2011 |
Chen X, Lin Q, Ni J, Zhang D, Sun J, Zhao Y, Geng X. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells Thin Solid Films. 520: 1263-1267. DOI: 10.1016/J.Tsf.2011.04.199 |
0.758 |
|
2011 |
Zhang H, Zhang X, Wei C, Sun J, Geng X, Xiong S, Zhao Y. Microstructure characterization of microcrystalline silicon thin films deposited by very high frequency plasma-enhanced chemical vapor deposition by spectroscopic ellipsometry Thin Solid Films. 520: 861-865. DOI: 10.1016/J.Tsf.2011.04.166 |
0.844 |
|
2011 |
Zhang X, Wang G, Zheng X, Wei C, Geng X, Xiong S, Zhao Y. A pre-hydrogen glow method to improve the reproducibility of intrinsic microcrystalline silicon thin film depositions in a single-chamber system Solar Energy Materials and Solar Cells. 95: 2448-2453. DOI: 10.1016/J.Solmat.2011.04.030 |
0.835 |
|
2011 |
Hu Z, Zhang J, Chen X, Ren S, Hao Z, Geng X, Zhao Y. Performance of electron beam deposited tungsten doped indium oxide films as anodes in organic solar cells Solar Energy Materials and Solar Cells. 95: 2173-2177. DOI: 10.1016/J.Solmat.2011.03.020 |
0.617 |
|
2011 |
Ni J, Zhang J, Cao Y, Wang X, Chen X, Geng X, Zhao Y. Low temperature deposition of high open-circuit voltage (>1.0V) p–i–n type amorphous silicon solar cells Solar Energy Materials and Solar Cells. 95: 1922-1926. DOI: 10.1016/J.Solmat.2011.02.021 |
0.764 |
|
2010 |
Geng X, Zhao Y, Zhang X, Hou G, Ren H, Ge H, Chen X. Research Progresses on High Efficiency Amorphous and Microcrystalline Silicon-Based Thin Film Solar Cells Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A21-03 |
0.694 |
|
2010 |
Han X, Hou G, Zhang X, Wei C, Li G, Zhang J, Chen X, Zhang D, Sun J, Zhao Y, Geng X. Improvement of hydrogenated microcrystalline silicon solar cell performance by VHF power profiling technique Solar Energy Materials and Solar Cells. 94: 254-257. DOI: 10.1016/J.Solmat.2009.09.010 |
0.733 |
|
2010 |
Yuan Y, Zhang K, Wei Z, Geng X. Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells Science China-Physics Mechanics & Astronomy. 53: 2042-2046. DOI: 10.1007/S11433-010-4143-6 |
0.533 |
|
2010 |
Hou G, Yu C, Liu F, Sun J, Geng X, Zhao Y. Low‐temperature deposition of high quality β‐FeSi2 films by co‐sputtering of Fe and Si for β‐FeSi2/Si heterojunction solar cell Physica Status Solidi (C). 7: 1081-1084. DOI: 10.1002/Pssc.200982787 |
0.649 |
|
2010 |
Hou G, Han X, Geng X, Zhang X, Wei C, Sun J, Chen X, Zhang J, Zhao Y. Structural evolution optimization at p/i interface and in the bulk intrinsic‐layer for high efficiency microcrystalline silicon solar cells Physica Status Solidi (C). 7: 1089-1092. DOI: 10.1002/Pssc.200982709 |
0.722 |
|
2009 |
Hou G, Han X, Wei C, Zhang X, Li G, Dai Z, Chen X, Zhang J, Zhao Y, Geng X. Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A07-21 |
0.773 |
|
2009 |
Wang S, Zhang X, Zhao Y, Wei C, Xu S, Sun J, Geng X. Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD Optoelectronics Letters. 5: 212-215. DOI: 10.1007/S11801-009-8206-8 |
0.65 |
|
2009 |
Yuan Y, Hou G, Zhang J, Xue J, Cao L, Zhao Y, Geng X. Performance improvement of n-i-p μc-Si:H solar cells by gradient hydrogen dilution technique Science China-Technological Sciences. 52: 1756-1761. DOI: 10.1007/S11431-009-0032-5 |
0.675 |
|
2009 |
Zhao Y, Zhang X, Xue J, Zhang J, Hou G, Cai N, Chen X, Wei C, Sun J, Zhang D, Ren H, Xiong S, Geng X. Research status of silicon‐based thin film solar cells in Nankai University Physica Status Solidi (C). 6: 758-764. DOI: 10.1002/Pssc.200880704 |
0.823 |
|
2008 |
Wang Y, Geng X, Stiebig H, Finger F. Stability of Microcrystalline Silicon Solar Cells with HWCVD Buffer Layer Thin Solid Films. 516: 733-735. DOI: 10.1016/J.Tsf.2007.06.201 |
0.435 |
|
2008 |
Shang Z, Zhang J, Zhang L, Hu Z, Xue J, Zhao Y, Geng X. P-μc-Si1-xGex :H thin film by VHF-PECVD Optoelectronics Letters. 4: 130-132. DOI: 10.1007/S11801-008-7137-0 |
0.657 |
|
2007 |
Hou G, Xue J, Yuan Y, Sun J, Zhao Y, Geng X. A fast method to diagnose phase transition from amorphous to microcrystalline silicon Science China-Physics Mechanics & Astronomy. 50: 731-736. DOI: 10.1007/S11433-007-0074-2 |
0.619 |
|
2006 |
Lei Q, Wu Z, Geng X, Zhao Y, Xi J. INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS Modern Physics Letters B. 20: 1739-1747. DOI: 10.1142/S0217984906012195 |
0.721 |
|
2006 |
Lei Q, Wu Z, Xi J, Geng X, Zhao Y, Sun J. Development Of Highly Conductive Boron-Doped Microcrystalline Silicon Films For Application In Solar Cells International Journal of Modern Physics B. 20: 303-314. DOI: 10.1142/S0217979206033292 |
0.732 |
|
2006 |
Mai Y, Klein S, Geng X, Hülsbeck M, Carius R, Finger F. Differences in the structure composition of microcrystalline silicon solar cells deposited by HWCVD and PECVD: Influence on open circuit voltage Thin Solid Films. 501: 272-275. DOI: 10.1016/J.Tsf.2005.07.193 |
0.705 |
|
2006 |
Wu Z, Sun J, Lei Q, Zhao Y, Geng X, Xi J. Analysis on pressure dependence of microcrystalline silicon by optical emission spectroscopy Physica E-Low-Dimensional Systems & Nanostructures. 33: 125-129. DOI: 10.1016/J.Physe.2005.12.165 |
0.665 |
|
2006 |
Han X, Wang Y, Xue J, Zhao S, Li Y, Geng X. Stability of microcrystalline silicon materials under light soaking Materials Science in Semiconductor Processing. 9: 300-303. DOI: 10.1016/J.Mssp.2006.01.056 |
0.478 |
|
2006 |
Wang Y, Han X, Zhu F, Hou G, Ren H, Zhang K, Xue J, Sun J, Zhao Y, Geng X. Light induced degradation of microcrystalline silicon solar cells Journal of Non-Crystalline Solids. 352: 1909-1912. DOI: 10.1016/J.Jnoncrysol.2006.01.033 |
0.581 |
|
2006 |
Mai Y, Klein S, Carius R, Stiebig H, Houben L, Geng X, Finger F. Improvement of open circuit voltage in microcrystalline silicon solar cells using hot wire buffer layers Journal of Non-Crystalline Solids. 352: 1859-1862. DOI: 10.1016/J.Jnoncrysol.2005.11.116 |
0.724 |
|
2006 |
Wu Z, Lei Q, Xi J, Zhao Y, Geng X. Hydrogenated microcrystalline silicon films prepared by VHF-PECVD and single junction solar cell Journal of Materials Science. 41: 1721-1724. DOI: 10.1007/S10853-006-2923-1 |
0.593 |
|
2006 |
Han X, Wang Y, Xue J, Zhao S, Ren H, Zhao Y, Li Y, Geng X. Stability of thin films of microcrystalline silicon under light soaking Optoelectronics Letters. 2: 15-17. DOI: 10.1007/Bf03033582 |
0.628 |
|
2006 |
Zhao Y, Geng X, Wang W, Li X, Xu Y. R&D activities of silicon-based thin-film solar cells in China Physica Status Solidi (a). 203: 714-720. DOI: 10.1002/Pssa.200564506 |
0.569 |
|
2006 |
Zhang J, Shimizu K, Zhao Y, Geng X, Hanna J. Silicon‐based narrow‐bandgap thin‐film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD Physica Status Solidi (a). 203: 760-775. DOI: 10.1002/Pssa.200564505 |
0.614 |
|
2005 |
Wu Z, Lei Q, Xi J, Ying Z, Geng X. Microcrystalline Silicon Films Prepared By Very High Frequency Plasma Enhanced Chemical Vapor Deposition At Low Temperature International Journal of Modern Physics B. 19: 3013-3020. DOI: 10.1142/S0217979205030840 |
0.567 |
|
2005 |
Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers Applied Physics Letters. 87: 073503. DOI: 10.1063/1.2011771 |
0.712 |
|
2005 |
Mai Y, Klein S, Carius R, Wolff J, Lambertz A, Finger F, Geng X. Microcrystalline silicon solar cells deposited at high rates Journal of Applied Physics. 97: 114913. DOI: 10.1063/1.1927689 |
0.767 |
|
2005 |
Yang H, Wu C, Huang J, Ding R, Zhao Y, Geng X, Xiong S. Optical emission spectroscopy investigation on very high frequency plasma and its glow discharge mechanism during the microcrystalline silicon deposition Thin Solid Films. 472: 125-129. DOI: 10.1016/J.Tsf.2004.06.130 |
0.629 |
|
2005 |
Zhang X, Zhao Y, Zhu F, Wei C, Wu C, Gao Y, Sun J, Hou G, Geng X, Xiong S. A combinatorial analysis of deposition parameters and substrates on performance of μc-Si:H thin films by VHF-PECVD Applied Surface Science. 245: 1-5. DOI: 10.1016/J.Apsusc.2004.09.109 |
0.727 |
|
2004 |
Mai Y, Klein S, Geng X, Finger F. Structure adjustment during high-deposition-rate growth of microcrystalline silicon solar cells Applied Physics Letters. 85: 2839-2841. DOI: 10.1063/1.1801676 |
0.72 |
|
2003 |
Hou G, Mai Y, Xue J, Zhao Y, Zhang X, Ren H, Zhang D, Sun J, Geng X. A combinatorial analysis of deposition parameters on deposition process and performance of silicon thin films by VHF-PECVD Physica Status Solidi (a). 199: 238-242. DOI: 10.1002/Pssa.200306658 |
0.767 |
|
2002 |
YANG H, WU C, XIONG S, MAI Y, LI H, LI Y, CHEN Y, WANG Z, ZHAO Y, GENG X. IN-SITU SPECTRAL ANALYSIS OF VERY HIGH FREQUENCY GLOW DISCHARGE (VHF-GD) International Journal of Modern Physics B. 16: 4475-4478. DOI: 10.1142/S0217979202015649 |
0.738 |
|
2002 |
YANG H, WU C, MAI Y, LI H, LI Y, ZHAO Y, XUE J, CHEN Y, REN H, GENG X, XIONG S. HIGH GROWTH-RATE DEPOSITION OF μc-Si:H THIN FILM AT LOW TEMPERATURE WITH VHF-PECVD International Journal of Modern Physics B. 16: 4259-4262. DOI: 10.1142/S0217979202015212 |
0.759 |
|
1996 |
Wang B, Wang D, Cao Y, Chai X, Geng X, Li T. Modification and photosensitization of hydrogenated amorphous silicon with a LB film of dipyridine derivatives Thin Solid Films. 588-591. DOI: 10.1016/S0040-6090(95)08397-9 |
0.579 |
|
1994 |
Yu Z, Geng X, Sun Y, Liu S, Li H, Lu J, Sun J, Sun Z, Xu W. Super large grain size of poly-Si obtained by using the solid-phase crystallization method Physica Status Solidi (a). 144: 393-399. DOI: 10.1002/Pssa.2211440219 |
0.586 |
|
1992 |
Liu J, Yan B, Shi L, Geng X, Sun Z, Xu W. Evidence of charge storage in a-Si:H p-i-n diode and lifetime of carriers Journal of Non-Crystalline Solids. 139: 74-77. DOI: 10.1016/S0022-3093(05)80807-5 |
0.336 |
|
1992 |
Geng X, Wu C, Yu Z, Wang G, Chen Z, Sun Z, Xu W. YAG Laser Annealing Used to Produce Poly-Si Films Physica Status Solidi (a). 132. DOI: 10.1002/Pssa.2211320231 |
0.492 |
|
1992 |
Yan B, Liu J, Geng X, Shi L, Sun Z, Xu W. Measurement of electron density and mobility in P-d oped a-S i:H and mc-S i:H films Physica Status Solidi (a). 130: 133-139. DOI: 10.1002/Pssa.2211300116 |
0.368 |
|
1991 |
Liu J, Yan B, Shi L, Geng X, Sun Z, Xu W. Calculation of the effective conductivity of μC-Si:H using three-phase model Journal of Non-Crystalline Solids. 507-510. DOI: 10.1016/S0022-3093(05)80166-8 |
0.411 |
|
1991 |
Yan B, Liu J, Geng X, Shi L, Sun Z, Xu W. Characteristics of i(a-Si:H)/n+(mc-Si:H) Junctions and Electron Transport in P-doped mc-Si:H Films Physica Status Solidi (a). 125: 535-540. DOI: 10.1002/Pssa.2211250214 |
0.477 |
|
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