| Year |
Citation |
Score |
| 2023 |
Pain SL, Khorani E, Niewelt T, Wratten A, Walker M, Grant NE, Murphy JD. Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon. Nanoscale. PMID 37284742 DOI: 10.1039/d3nr01374j |
0.319 |
|
| 2020 |
Grant NE, Pointon AI, Jefferies R, Hiller D, Han Y, Beanland R, Walker M, Murphy JD. Atomic level termination for passivation and functionalisation of silicon surfaces. Nanoscale. PMID 32789341 DOI: 10.1039/D0Nr03860A |
0.369 |
|
| 2020 |
Pointon AI, Grant NE, Pain SL, White JT, Murphy JD. Sub-2 cm/s passivation of silicon surfaces by aprotic solutions Applied Physics Letters. 116: 121601. DOI: 10.1063/5.0003704 |
0.372 |
|
| 2020 |
Grant NE, Scowcroft JR, Pointon AI, Al-Amin M, Altermatt PP, Murphy JD. Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells Solar Energy Materials and Solar Cells. 206: 110299. DOI: 10.1016/J.Solmat.2019.110299 |
0.741 |
|
| 2020 |
Hiller D, Markevich VP, Guzman JATd, König D, Prucnal S, Bock W, Julin J, Peaker AR, Macdonald D, Grant NE, Murphy JD. Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs Light Physica Status Solidi (a). 2000436. DOI: 10.1002/Pssa.202000436 |
0.43 |
|
| 2019 |
Hooper IR, Grant NE, Barr LE, Hornett SM, Murphy JD, Hendry E. High efficiency photomodulators for millimeter wave and THz radiation. Scientific Reports. 9: 18304. PMID 31797937 DOI: 10.1038/S41598-019-54011-6 |
0.36 |
|
| 2019 |
Bothe K, Herlufsen S, Murphy JD. Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon Semiconductor Science and Technology. 34: 35030. DOI: 10.1088/1361-6641/Ab0518 |
0.44 |
|
| 2019 |
Grant NE, Kho TC, Fong KC, Franklin E, McIntosh KR, Stocks M, Wan Y, Wang E, Zin NS, Murphy JD, Blakers A. Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells Solar Energy Materials and Solar Cells. 203: 110155. DOI: 10.1016/J.Solmat.2019.110155 |
0.523 |
|
| 2019 |
Abernethy RG, Gibson JSK-, Giannattasio A, Murphy JD, Wouters O, Bradnam S, Packer LW, Gilbert MR, Klimenkov M, Rieth M, Schneider H-, Hardie CD, Roberts SG, Armstrong DEJ. Effects of neutron irradiation on the brittle to ductile transition in single crystal tungsten Journal of Nuclear Materials. 527: 151799. DOI: 10.1016/J.Jnucmat.2019.151799 |
0.327 |
|
| 2019 |
Al-Amin M, Grant NE, Pointon AI, Murphy JD. Iodine–Ethanol Surface Passivation for Measurement of Millisecond Carrier Lifetimes in Silicon Wafers with Different Crystallographic Orientations Physica Status Solidi (a). 216: 1900257. DOI: 10.1002/Pssa.201900257 |
0.735 |
|
| 2019 |
Wu M, Murphy JD, Jiang J, Wilshaw PR, Wilkinson AJ. Microstructural Evolution of Mechanically Deformed Polycrystalline Silicon for Kerfless Photovoltaics Physica Status Solidi (a). 216: 1800578. DOI: 10.1002/Pssa.201800578 |
0.63 |
|
| 2019 |
Murphy JD, Pointon AI, Grant NE, Shah VA, Myronov M, Voronkov VV, Falster RJ. Minority carrier lifetime in indium doped silicon for photovoltaics Progress in Photovoltaics. 27: 844-855. DOI: 10.1002/Pip.3172 |
0.467 |
|
| 2018 |
Mullins J, Markevich VP, Vaqueiro-Contreras M, Grant NE, Jensen L, Jabłoński J, Murphy JD, Halsall MP, Peaker AR. Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states Journal of Applied Physics. 124: 35701. DOI: 10.1063/1.5036718 |
0.498 |
|
| 2018 |
Niewelt T, Richter A, Kho TC, Grant NE, Bonilla RS, Steinhauser B, Polzin J-, Feldmann F, Hermle M, Murphy JD, Phang SP, Kwapil W, Schubert MC. Taking monocrystalline silicon to the ultimate lifetime limit Solar Energy Materials and Solar Cells. 185: 252-259. DOI: 10.1016/J.Solmat.2018.05.040 |
0.507 |
|
| 2018 |
Pointon AI, Grant NE, Wheeler-Jones EC, Altermatt PP, Murphy JD. Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials Solar Energy Materials and Solar Cells. 183: 164-172. DOI: 10.1016/J.Solmat.2018.03.028 |
0.479 |
|
| 2018 |
Rahman T, To A, Pollard ME, Grant NE, Colwell J, Payne DNR, Murphy JD, Bagnall DM, Hoex B, Boden SA. Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells Progress in Photovoltaics. 26: 38-47. DOI: 10.1002/Pip.2928 |
0.461 |
|
| 2017 |
Grant NE, Niewelt T, Wilson NR, Wheeler-Jones EC, Bullock J, Al-Amin M, Schubert MC, van Veen AC, Javey A, Murphy JD. Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications Ieee Journal of Photovoltaics. 7: 1574-1583. DOI: 10.1109/Jphotov.2017.2751511 |
0.75 |
|
| 2017 |
Al-Amin M, Murphy JD. Combining Low-Temperature Gettering With Phosphorus Diffusion Gettering for Improved Multicrystalline Silicon Ieee Journal of Photovoltaics. 7: 1519-1527. DOI: 10.1109/Jphotov.2017.2741100 |
0.755 |
|
| 2017 |
Al-Amin M, Murphy JD. Passivation Effects on Low-Temperature Gettering in Multicrystalline Silicon Ieee Journal of Photovoltaics. 7: 68-77. DOI: 10.1109/Jphotov.2016.2618608 |
0.787 |
|
| 2017 |
Niewelt T, Selinger M, Grant NE, Kwapil WM, Murphy JD, Schubert MC. Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon Journal of Applied Physics. 121: 185702. DOI: 10.1063/1.4983024 |
0.48 |
|
| 2017 |
Al-Amin M, Grant NE, Murphy JD. Low‐Temperature Saw Damage Gettering to Improve Minority Carrier Lifetime in Multicrystalline Silicon Physica Status Solidi-Rapid Research Letters. 11: 1700268. DOI: 10.1002/Pssr.201700268 |
0.766 |
|
| 2017 |
Grant NE, Murphy JD. Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review Physica Status Solidi-Rapid Research Letters. 11: 1700243. DOI: 10.1002/Pssr.201700243 |
0.452 |
|
| 2017 |
Mullins J, Leonard S, Markevich VP, Hawkins ID, Santos P, Coutinho J, Marinopoulos A, Murphy JD, Halsall MP, Peaker AR. Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms Physica Status Solidi (a). 214: 1700304. DOI: 10.1002/Pssa.201700304 |
0.309 |
|
| 2016 |
Al-Amin M, Murphy JD. Low temperature internal gettering of bulk defects in silicon photovoltaic materials Solid State Phenomena. 242: 109-119. DOI: 10.4028/Www.Scientific.Net/Ssp.242.109 |
0.784 |
|
| 2016 |
Liu AY, Sun C, Markevich VP, Peaker AR, Murphy J, MacDonald D. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films Journal of Applied Physics. 120: 193103. DOI: 10.1063/1.4967914 |
0.435 |
|
| 2016 |
Al-Amin M, Murphy JD. Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering Journal of Applied Physics. 119. DOI: 10.1063/1.4954010 |
0.774 |
|
| 2016 |
Grant NE, Markevich VP, Mullins J, Peaker AR, Rougieux F, Macdonald D, Murphy JD. Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon Physica Status Solidi (a). 213: 2844-2849. DOI: 10.1002/Pssa.201600360 |
0.543 |
|
| 2015 |
Rougieux FE, Grant NE, Barugkin C, MacDonald D, Murphy JD. Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon Ieee Journal of Photovoltaics. 5: 495-498. DOI: 10.1109/Jphotov.2014.2367912 |
0.471 |
|
| 2015 |
Murphy JD, Al-Amin M, Bothe K, Olmo M, Voronkov VV, Falster RJ. The effect of oxide precipitates on minority carrier lifetime in n -type silicon Journal of Applied Physics. 118. DOI: 10.1063/1.4936852 |
0.758 |
|
| 2015 |
Leonard S, Markevich VP, Peaker AR, Hamilton B, Murphy JD. Evidence for an iron-hydrogen complex in p-type silicon Applied Physics Letters. 107. DOI: 10.1063/1.4927323 |
0.44 |
|
| 2014 |
Murphy JD, McGuire RE, Bothe K, Voronkov VV, Falster RJ. Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion Journal of Applied Physics. 116. DOI: 10.1063/1.4892015 |
0.398 |
|
| 2014 |
Murphy JD, McGuire RE, Bothe K, Voronkov VV, Falster RJ. Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation Solar Energy Materials and Solar Cells. 120: 402-411. DOI: 10.1016/J.Solmat.2013.06.018 |
0.498 |
|
| 2013 |
Murphy JD, Bothe K, Voronkov VV, Falster RJ. On the mechanism of recombination at oxide precipitates in silicon Applied Physics Letters. 102: 42105. DOI: 10.1063/1.4789858 |
0.419 |
|
| 2013 |
Martins GF, Thompson AJR, Goller B, Kovalev D, Murphy JD. Fabrication of ‘finger-geometry’ silicon solar cells by electrochemical anodisation Journal of Materials Science. 48: 2977-2985. DOI: 10.1007/S10853-012-7075-X |
0.474 |
|
| 2012 |
Murphy JD, Falster RJ. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C Journal of Applied Physics. 112: 113506. DOI: 10.1063/1.4767378 |
0.435 |
|
| 2012 |
Bothe K, Falster RJ, Murphy JD. Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates Applied Physics Letters. 101: 32107. DOI: 10.1063/1.4737175 |
0.38 |
|
| 2012 |
Murphy JD, Bothe K, Krain R, Voronkov VV, Falster RJ. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon Journal of Applied Physics. 111: 113709. DOI: 10.1063/1.4725475 |
0.372 |
|
| 2012 |
Lang V, Murphy JD, Falster RJ, Morton JJL. Spin-dependent recombination in Czochralski silicon containing oxide precipitates Journal of Applied Physics. 111: 13710. DOI: 10.1063/1.3675449 |
0.405 |
|
| 2012 |
Gregori NJ, Murphy JD, Sykes JM, Wilshaw PR. Chemical etching to dissolve dislocation cores in multicrystalline silicon Physica B: Condensed Matter. 407: 2970-2973. DOI: 10.1016/J.Physb.2011.07.049 |
0.67 |
|
| 2011 |
Murphy JD, Bothe K, Krain R, Olmo M, Voronkov VV, Falster RJ. Recombination at oxide precipitates in silicon Solid State Phenomena. 205-210. DOI: 10.4028/Www.Scientific.Net/Ssp.178-179.205 |
0.454 |
|
| 2011 |
Zeng Z, Murphy JD, Falster RJ, Ma X, Yang D, Wilshaw PR. The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon Journal of Applied Physics. 109: 63532. DOI: 10.1063/1.3555625 |
0.688 |
|
| 2011 |
Murphy JD, Falster RJ. Contamination of silicon by iron at temperatures below 800 °C Physica Status Solidi-Rapid Research Letters. 5: 370-372. DOI: 10.1002/Pssr.201105388 |
0.447 |
|
| 2010 |
Wang Y, Murphy JD, Wilshaw PR. Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3458862 |
0.6 |
|
| 2009 |
Mansfield BR, Armstrong DEJ, Wilshaw PR, Murphy JD. An investigation into fracture of multi-crystalline silicon Solid State Phenomena. 55-60. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.55 |
0.576 |
|
| 2009 |
Alpass CR, Jain A, Murphy JD, Wilshaw PR. Measurements of dislocation locking by near-surface ion-implanted nitrogen in czochralski silicon Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3151813 |
0.681 |
|
| 2009 |
Alpass CR, Murphy JD, Falster RJ, Wilshaw PR. Nitrogen diffusion and interaction with dislocations in single-crystal silicon Journal of Applied Physics. 105: 13519. DOI: 10.1063/1.3050342 |
0.713 |
|
| 2009 |
Alpass CR, Murphy JD, Falster RJ, Wilshaw PR. Nitrogen in silicon: Diffusion at 500–750 °C and interaction with dislocations Materials Science and Engineering B-Advanced Functional Solid-State Materials. 159: 95-98. DOI: 10.1016/J.Mseb.2008.09.004 |
0.694 |
|
| 2009 |
Murphy JD, Giannattasio A, Yao Z, Hetherington CJD, Nellist PD, Roberts SG. The mechanical properties of tungsten grown by chemical vapour deposition Journal of Nuclear Materials. 386: 583-586. DOI: 10.1016/J.Jnucmat.2008.12.182 |
0.415 |
|
| 2008 |
Halliday FM, Armstrong DEJ, Murphy JD, Roberts SG. Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ions Advanced Materials Research. 59: 304-307. DOI: 10.4028/Www.Scientific.Net/Amr.59.304 |
0.314 |
|
| 2007 |
Alpass CR, Murphy JD, Giannattasio A, Senkader S, Falster RJ, Wilshaw PR. Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking Physica Status Solidi (a). 204: 2256-2260. DOI: 10.1002/Pssa.200675457 |
0.692 |
|
| 2006 |
Murphy JD, Wilshaw PR, Pygall BC, Senkader S, Falster RJ. Enhanced oxygen diffusion in highly doped p-type Czochralski silicon Journal of Applied Physics. 100: 103531-103531. DOI: 10.1063/1.2369536 |
0.704 |
|
| 2006 |
Murphy JD, Alpass CR, Giannattasio A, Senkader S, Falster RJ, Wilshaw PR. Nitrogen in silicon : transport and mechanical properties Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 253: 113-117. DOI: 10.1016/J.Nimb.2006.10.023 |
0.707 |
|
| 2006 |
Murphy JD, Senkader S, Falster RJ, Wilshaw PR. Oxygen transport in Czochralski silicon investigated by dislocation locking experiments Materials Science and Engineering B-Advanced Functional Solid-State Materials. 134: 176-184. DOI: 10.1016/J.Mseb.2006.06.045 |
0.696 |
|
| 2005 |
Murphy JD, Giannattasio A, Alpass CR, Senkader S, Falster RJ, Wilshaw PR. The influence of nitrogen on dislocation locking in float-zone silicon Solid State Phenomena. 139-144. DOI: 10.4028/Www.Scientific.Net/Ssp.108-109.139 |
0.673 |
|
| 2005 |
Giannattasio A, Murphy JD, Senkader S, Falster RJ, Wilshaw PR. Erratum: Oxygen and Nitrogen Transport in Silicon Investigated by Dislocation Locking Experiments [ J. Electrochem. Soc. , 152 , G460 (2005) ] Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1976462 |
0.614 |
|
| 2005 |
Giannattasio A, Murphy JD, Senkader S, Falster RJ, Wilshaw PR. Oxygen and Nitrogen Transport in Silicon Investigated by Dislocation Locking Experiments Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1901669 |
0.705 |
|
| 2005 |
Evans-Freeman JH, Emiroglu D, Vernon-Parry KD, Murphy JD, Wilshaw PR. High resolution deep level transient spectroscopy applied to extended defects in silicon Journal of Physics: Condensed Matter. 17. DOI: 10.1088/0953-8984/17/22/009 |
0.644 |
|
| 2005 |
Murphy JD, Giannattasio A, Senkader S, Falster RJ, Wilshaw PR. Nitrogen transport in float‐zone and Czochralski silicon investigated by dislocation locking experiments Physica Status Solidi (a). 202: 926-930. DOI: 10.1002/Pssa.200460532 |
0.701 |
|
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