| Year |
Citation |
Score |
| 2020 |
Lee J, Ravichandran AV, Mohan J, Cheng L, Lucero AT, Zhu H, Che Z, Catalano M, Kim MJ, Wallace RM, Venugopal A, Choi W, Colombo L, Kim J. Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics. Acs Applied Materials & Interfaces. PMID 32667778 DOI: 10.1021/Acsami.0C07548 |
0.404 |
|
| 2020 |
Liu N, Choi W, Kim H, Jung C, Kim J, Choo SH, Kwon Y, An BS, Hong S, So S, Yang CW, Hur J, Kim S. Rapid and mass-producible synthesis of high-crystallinity MoSe nanosheets by ampoule-loaded chemical vapor deposition. Nanoscale. PMID 32080697 DOI: 10.1039/C9Nr10418F |
0.339 |
|
| 2020 |
Kang M, Yang HI, Choi W. Electrical properties of Al2O3/WSe2 interface based on capacitance-voltage characteristics Journal of Physics D. 53. DOI: 10.1088/1361-6463/Ab8De6 |
0.384 |
|
| 2019 |
Jung C, Yang HI, Choi W. Effect of Ultraviolet-Ozone Treatment on MoS Monolayers: Comparison of Chemical-Vapor-Deposited Polycrystalline Thin Films and Mechanically Exfoliated Single Crystal Flakes. Nanoscale Research Letters. 14: 278. PMID 31418118 DOI: 10.1186/S11671-019-3119-3 |
0.377 |
|
| 2019 |
Kim NH, Choi M, Kim TW, Choi W, Park SY, Byun KM. Sensitivity and Stability Enhancement of Surface Plasmon Resonance Biosensors based on a Large-Area Ag/MoS Substrate. Sensors (Basel, Switzerland). 19. PMID 31010067 DOI: 10.3390/S19081894 |
0.339 |
|
| 2019 |
Kang M, Yang HI, Choi W. Oxidation of WS2 and WSe2 monolayers by ultraviolet-ozone treatment Journal of Physics D. 52: 505105. DOI: 10.1088/1361-6463/Ab42B0 |
0.308 |
|
| 2019 |
Choi W, Yin D, Choo S, Jeong S, Kwon H, Yoon Y, Kim S. Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts Applied Physics Letters. 115: 33501. DOI: 10.1063/1.5099380 |
0.382 |
|
| 2019 |
Im H, Liu N, Bala A, Kim S, Choi W. Large-area MoS2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse Apl Materials. 7: 61101. DOI: 10.1063/1.5094586 |
0.381 |
|
| 2019 |
Jeong HI, Park S, Yang HI, Choi W. Electrical properties of MoSe2 metal-oxide-semiconductor capacitors Materials Letters. 253: 209-212. DOI: 10.1016/J.Matlet.2019.06.072 |
0.406 |
|
| 2018 |
Lee H, Ahn J, Im S, Kim J, Choi W. High-Responsivity Multilayer MoSe Phototransistors with Fast Response Time. Scientific Reports. 8: 11545. PMID 30069033 DOI: 10.1038/S41598-018-29942-1 |
0.389 |
|
| 2018 |
Kim SY, Yang HI, Choi W. Photoluminescence quenching in monolayer transition metal dichalcogenides by Al2O3 encapsulation Applied Physics Letters. 113: 133104. DOI: 10.1063/1.5048052 |
0.401 |
|
| 2018 |
Yang HI, Park S, Choi W. Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment Applied Surface Science. 443: 91-96. DOI: 10.1016/J.Apsusc.2018.02.256 |
0.359 |
|
| 2017 |
Hong YK, Liu N, Yin D, Hong S, Kim DH, Kim S, Choi W, Yoon Y. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials Journal of Physics D: Applied Physics. 50: 164001. DOI: 10.1088/1361-6463/Aa5E8A |
0.343 |
|
| 2017 |
Lee HA, Kim SY, Kim J, Choi W. Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors Journal of Physics D. 50: 94001. DOI: 10.1088/1361-6463/Aa579F |
0.439 |
|
| 2017 |
Zhao Y, Lee H, Choi W, Fei W, Lee CJ. Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition Rsc Advances. 7: 27969-27973. DOI: 10.1039/C7Ra03642F |
0.369 |
|
| 2016 |
Park S, Kim SY, Choi Y, Kim M, Shin H, Kim J, Choi W. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals. Acs Applied Materials & Interfaces. PMID 27117229 DOI: 10.1021/Acsami.6B01568 |
0.444 |
|
| 2016 |
Kim SY, Park S, Choi W. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation Applied Physics Letters. 109: 152101. DOI: 10.1063/1.4964606 |
0.428 |
|
| 2016 |
Kim JH, Kim TH, Lee H, Park YR, Choi W, Lee CJ. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors Aip Advances. 6: 65106. DOI: 10.1063/1.4953809 |
0.415 |
|
| 2015 |
Baek SH, Choi Y, Choi W. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition. Nanoscale Research Letters. 10: 388. PMID 26439617 DOI: 10.1186/S11671-015-1094-X |
0.406 |
|
| 2015 |
Kwon J, Hong YK, Han G, Omkaram I, Choi W, Kim S, Yoon Y. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. Advanced Materials (Deerfield Beach, Fla.). 27: 2224-30. PMID 25676825 DOI: 10.1002/Adma.201404367 |
0.332 |
|
| 2015 |
Kwon H, Choi W, Oh MS, Kim S, Grigoropoulos CP. Pulsed laser annealing for advanced performance of mechanically flexible and optically transparent multilayer MoS2 transistors (Presentation Recording) Proceedings of Spie. 9552. DOI: 10.1117/12.2192024 |
0.358 |
|
| 2014 |
Kwon J, Omkaram I, Song W, Kim M, Ki HY, Choi W, Kim S. Electrical performance of local bottom-gated MoS2 thin-film transistors Journal of Information Display. 15: 107-110. DOI: 10.1080/15980316.2014.917340 |
0.412 |
|
| 2014 |
Kwon H, Choi W, Lee D, Lee Y, Kwon J, Yoo B, Grigoropoulos CP, Kim S. Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors Nano Research. 7: 1137-1145. DOI: 10.1007/S12274-014-0476-1 |
0.383 |
|
| 2014 |
Kim SY, Park S, Choi W. Variability of electrical contact properties in multilayer MoS 2 thin-film transistors Applied Physics A. 117: 761-766. DOI: 10.1007/S00339-014-8785-5 |
0.38 |
|
| 2013 |
Yang J, Kim S, Choi W, Park SH, Jung Y, Cho MH, Kim H. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Acs Applied Materials & Interfaces. 5: 4739-44. PMID 23683268 DOI: 10.1021/Am303261C |
0.382 |
|
| 2013 |
CHOI W, KIM S. Two-dimensional Transition-metal Dichalcogenides for High-mobility and Low-power Transistors Physics and High Technology. 22: 18. DOI: 10.3938/Phit.22.011 |
0.331 |
|
| 2012 |
Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/Ncomms2018 |
0.43 |
|
| 2012 |
Choi W, Cho MY, Konar A, Lee JH, Cha GB, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S. High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared. Advanced Materials (Deerfield Beach, Fla.). 24: 5832-6. PMID 22903762 DOI: 10.1002/Adma.201201909 |
0.36 |
|
| 2012 |
Yang J, Park JK, Kim S, Choi W, Lee S, Kim H. Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics Physica Status Solidi (a). 209: 2087-2090. DOI: 10.1002/Pssa.201228303 |
0.428 |
|
| 2011 |
Kim S, Kwon HJ, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Low-power flexible organic light-emitting diode display device. Advanced Materials (Deerfield Beach, Fla.). 23: 3511-6. PMID 21735486 DOI: 10.1002/Adma.201101066 |
0.348 |
|
| 2011 |
Kim S, Choi W, Rim W, Chun Y, Shim H, Kwon H, Kim J, Kee I, Kim S, Lee S, Park J. A Highly Sensitive Capacitive Touch Sensor Integrated on a Thin-Film-Encapsulated Active-Matrix OLED for Ultrathin Displays Ieee Transactions On Electron Devices. 58: 3609-3615. DOI: 10.1109/Ted.2011.2162844 |
0.325 |
|
| 2011 |
Choi W, Kim S, Jin YW, Lee SY, Sands TD. Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3561751 |
0.538 |
|
| 2011 |
Ihn S, Shin K, Jin M, Bulliard X, Yun S, Choi YS, Kim Y, Park J, Sim M, Kim M, Cho K, Kim TS, Choi D, Choi J, Choi W, et al. ITO-free inverted polymer solar cells using a GZO cathode modified by ZnO Solar Energy Materials and Solar Cells. 95: 1610-1614. DOI: 10.1016/J.Solmat.2011.01.011 |
0.334 |
|
| 2010 |
Choi W, Lee SY, Sands TD. Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3441400 |
0.558 |
|
| 2010 |
Park JS, Kim TS, Son KS, Lee K, Maeng W, Kim H, Kim ES, Park K, Seon J, Choi W, Ryu MK, Lee SY. The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination Applied Physics Letters. 96: 262109. DOI: 10.1063/1.3435482 |
0.408 |
|
| 2007 |
Choi W, Findikoglu AT, Romero MJ, Al-Jassim M. Effect of grain alignment on lateral carrier transport in aligned-crystalline silicon films on polycrystalline substrates Journal of Materials Research. 22: 821-825. DOI: 10.1557/Jmr.2007.0105 |
0.342 |
|
| 2006 |
Choi W, Lee J, Findikoglu AT. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films Applied Physics Letters. 89: 262111. DOI: 10.1063/1.2424655 |
0.413 |
|
| 2006 |
Choi W, Kang BS, Jia QX, Matias V, Findikoglu AT. Dielectric properties of ⟨001⟩-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO∕γ-Al2O3 buffer layers Applied Physics Letters. 88: 62907. DOI: 10.1063/1.2173232 |
0.402 |
|
| 2005 |
Choi W, Matias V, Lee J, Findikoglu AT. Dependence of carrier mobility on grain mosaic spread in ⟨001⟩-oriented Si films grown on polycrystalline substrates Applied Physics Letters. 87: 152104. DOI: 10.1063/1.2103405 |
0.369 |
|
| 2005 |
Findikoglu AT, Choi W, Matias V, Holesinger TG, Jia QX, Peterson DE. Well‐Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates Advanced Materials. 17: 1527-1531. DOI: 10.1002/Adma.200500040 |
0.38 |
|
| 2003 |
Choi W, Sands T. Ferroelectric field effect in epitaxial LaVO3/(Ba,Sr)/TiO3/(Pb,La) (Zr,Ti) O3/(La,Sr) CoO3 heterostructures Journal of Applied Physics. 93: 4761-4765. DOI: 10.1063/1.1560876 |
0.564 |
|
| 2001 |
Choi W, Sands T. Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C11.1.1 |
0.52 |
|
| 2001 |
Choi W, Sands T. Growth of Epitaxial LaVO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures Mrs Proceedings. 666. DOI: 10.1557/Proc-666-F11.8 |
0.502 |
|
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