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Chris Corbet - Publications

Affiliations: 
2016 University of Texas at Austin, Austin, Texas, U.S.A. 
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Mohammed OB, Movva HCP, Prasad N, Valsaraj A, Kang S, Corbet CM, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. ReS2-based interlayer tunnel field effect transistor Journal of Applied Physics. 122: 245701. DOI: 10.1063/1.5004038  0.646
2016 Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255  0.677
2016 Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263  0.764
2016 Corbet CM, Sonde SS, Tutuc E, Banerjee SK. Improved contact resistance in ReSe2 thin film field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4947468  0.604
2015 Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114  0.741
2015 Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Acs Nano. 9: 363-70. PMID 25514177 DOI: 10.1021/Nn505354A  0.603
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  0.741
2015 Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737  0.761
2015 Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677  0.796
2014 Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509  0.802
2013 Corbet C, Ramon M, Movva H, Reddy D, Kang S, Chowdhury SF, Akinwande D, Tutuc E, Register F, Banerjee SK. Novel graphene devices Ecs Transactions. 58: 73-77. DOI: 10.1149/05807.0073ecst  0.549
2012 Movva HCP, Ramón ME, Corbet CM, Chowdhury FS, Carpenter G, Tutuc E, Banerjee SK. Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions Device Research Conference - Conference Digest, Drc. 175-176. DOI: 10.1109/DRC.2012.6256963  0.476
2012 Banerjee SK, Register LF, Tutuc E, Reddy D, Kim S, Basu D, Corbet C, Colombo L, Carpenter G, MacDonald AH. Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2012.6256938  0.532
2012 Movva HCP, Ramón ME, Corbet CM, Sonde S, Fahad Chowdhury S, Carpenter G, Tutuc E, Banerjee SK. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Applied Physics Letters. 101. DOI: 10.1063/1.4765658  0.688
2011 Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. Acs Nano. 5: 7198-204. PMID 21800895 DOI: 10.1021/Nn202012M  0.809
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