| Year |
Citation |
Score |
| 2019 |
Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761 |
0.737 |
|
| 2019 |
Chun J, Li W, Agarwal A, Chowdhury S. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width Advanced Electronic Materials. 5: 1800689. DOI: 10.1002/Aelm.201800689 |
0.453 |
|
| 2018 |
Ji D, Agarwal A, Li W, Keller S, Chowdhury S. Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation Ieee Transactions On Electron Devices. 65: 483-487. DOI: 10.1109/Ted.2017.2786141 |
0.64 |
|
| 2018 |
Ji D, Li W, Agarwal A, Chan SH, Haller J, Bisi D, Labrecque M, Gupta C, Cruse B, Lal R, Keller S, Mishra UK, Chowdhury S. Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch Ieee Electron Device Letters. 39: 1030-1033. DOI: 10.1109/Led.2018.2843335 |
0.776 |
|
| 2018 |
Ji D, Agarwal A, Li H, Li W, Keller S, Chowdhury S. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ieee Electron Device Letters. 39: 863-865. DOI: 10.1109/Led.2018.2828844 |
0.747 |
|
| 2018 |
Ji D, Gupta C, Agarwal A, Chan SH, Lund C, Li W, Keller S, Mishra UK, Chowdhury S. Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714. DOI: 10.1109/Led.2018.2813312 |
0.785 |
|
| 2018 |
Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] Ieee Electron Device Letters. 39: 316-316. DOI: 10.1109/Led.2017.2788598 |
0.774 |
|
| 2018 |
Lund C, Agarwal A, Romanczyk B, Mates T, Nakamura S, DenBaars SP, Mishra UK, Keller S. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology. 33: 095014. DOI: 10.1088/1361-6641/Aad5Cf |
0.797 |
|
| 2017 |
Agarwal A, Gupta C, Alhassan A, Mates T, Keller S, Mishra U. Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition Applied Physics Express. 10: 111002. DOI: 10.7567/Apex.10.111002 |
0.744 |
|
| 2017 |
Ji D, Laurent MA, Agarwal A, Li W, Mandal S, Keller S, Chowdhury S. Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808. DOI: 10.1109/Ted.2016.2632150 |
0.826 |
|
| 2017 |
Gupta C, Chan SH, Agarwal A, Hatui N, Keller S, Mishra UK. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET Ieee Electron Device Letters. 38: 1575-1578. DOI: 10.1109/Led.2017.2756926 |
0.832 |
|
| 2017 |
Gupta C, Ji D, Chan SH, Agarwal A, Leach W, Keller S, Chowdhury S, Mishra UK. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs Ieee Electron Device Letters. 38: 1559-1562. DOI: 10.1109/Led.2017.2749540 |
0.812 |
|
| 2017 |
Mandal S, Agarwal A, Ahmadi E, Bhat KM, Ji D, Laurent MA, Keller S, Chowdhury S. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936. DOI: 10.1109/Led.2017.2709940 |
0.792 |
|
| 2017 |
Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates Ieee Electron Device Letters. 38: 353-355. DOI: 10.1109/Led.2017.2649599 |
0.82 |
|
| 2017 |
Agarwal A, Koksaldi O, Gupta C, Keller S, Mishra UK. Maskless regrowth of GaN for trenched devices by MOCVD Applied Physics Letters. 111: 233507. DOI: 10.1063/1.5003257 |
0.782 |
|
| 2017 |
Agarwal A, Tahhan M, Mates T, Keller S, Mishra U. Suppression of Mg propagation into subsequent layers grown by MOCVD Journal of Applied Physics. 121: 25106. DOI: 10.1063/1.4972031 |
0.786 |
|
| 2016 |
Gupta C, Chan SH, Lund C, Agarwal A, Koksaldi OS, Liu J, Enatsu Y, Keller S, Mishra UK. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels Applied Physics Express. 9: 121001. DOI: 10.7567/Apex.9.121001 |
0.738 |
|
| 2016 |
Gupta C, Chan SH, Enatsu Y, Agarwal A, Keller S, Mishra UK. OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET Ieee Electron Device Letters. 37: 1601-1604. DOI: 10.1109/Led.2016.2616508 |
0.82 |
|
| 2016 |
Agarwal A, Gupta C, Enatsu Y, Keller S, Mishra U. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD Semiconductor Science and Technology. 31: 125018. DOI: 10.1088/0268-1242/31/12/125018 |
0.785 |
|
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