| Year |
Citation |
Score |
| 2024 |
Kumar G, Lin CC, Kuo HC, Chen FC. Enhancing photoluminescence performance of perovskite quantum dots with plasmonic nanoparticles: insights into mechanisms and light-emitting applications. Nanoscale Advances. 6: 782-791. PMID 38298599 DOI: 10.1039/d3na01078c |
0.308 |
|
| 2024 |
Hsu WC, Chang CH, Hong YH, Kuo HC, Huang YW. Metasurface- and PCSEL-Based Structured Light for Monocular Depth Perception and Facial Recognition. Nano Letters. PMID 38198566 DOI: 10.1021/acs.nanolett.3c05002 |
0.353 |
|
| 2023 |
Yu TC, Huang WT, Wang HC, Chiu AP, Kou CH, Hong KB, Chang SW, Chow CW, Kuo HC. Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers. Micromachines. 15. PMID 38258206 DOI: 10.3390/mi15010087 |
0.315 |
|
| 2023 |
Miao WC, Chang CH, Hsiao FH, Chang YH, Huang JH, Su HT, Lin CY, Lin CL, Chow CW, Hong YH, Huang YW, Kuo HC. Metasurface-driven polarization-division multiplexing of PCSEL for optical communications. Discover Nano. 18: 149. PMID 38062340 DOI: 10.1186/s11671-023-03935-0 |
0.302 |
|
| 2023 |
Lee TY, Miao WC, Hung YY, Bai YH, Chen PT, Huang WT, Chen KA, Lin CC, Chen FC, Hong YH, Kuo HC. Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue-UV Hybrid Structures. Nanomaterials (Basel, Switzerland). 13. PMID 37513110 DOI: 10.3390/nano13142099 |
0.395 |
|
| 2023 |
Hsiao FH, Lee TY, Miao WC, Pai YH, Iida D, Lin CL, Chen FC, Chow CW, Lin CC, Horng RH, He JH, Ohkawa K, Hong YH, Chang CY, Kuo HC. Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications. Discover Nano. 18: 95. PMID 37498403 DOI: 10.1186/s11671-023-03871-z |
0.378 |
|
| 2023 |
Hsiao FH, Miao WC, Hong YH, Chiang H, Ho IH, Liang KB, Iida D, Lin CL, Ahn H, Ohkawa K, Chang CY, Kuo HC. Structural and optical analyses for InGaN-based red micro-LED. Discover Nano. 18: 77. PMID 37382747 DOI: 10.1186/s11671-023-03853-1 |
0.324 |
|
| 2023 |
Fan X, Wang S, Yang X, Zhong C, Chen G, Yu C, Chen Y, Wu T, Kuo HC, Lin Y, Chen Z. Brightened Bicomponent Perovskite Nano-Composite Based on Förster Resonance Energy Transfer for Micro-LED Displays. Advanced Materials (Deerfield Beach, Fla.). e2300834. PMID 37080636 DOI: 10.1002/adma.202300834 |
0.321 |
|
| 2023 |
Sadhu AS, Pai YH, Chen LY, Hsieh CA, Lin HW, Kuo HC. High bandwidth semipolar (20-21) micro-LED-based white light-emitting diodes utilizing perovskite quantum dots and organic emitters in color-conversion layers for visible light communication and solid-state lighting applications. Nanoscale. PMID 37060138 DOI: 10.1039/d3nr01086d |
0.355 |
|
| 2023 |
Chiang WH, Chang YH, Lin CC, Kuo HC, Lin GR, Huang JJ. Effect of radiative and nonradiative energy transfer processes of light-emitting diodes combined with quantum dots for visible light communication. Nanoscale Research Letters. 18: 29. PMID 36862206 DOI: 10.1186/s11671-023-03812-w |
0.309 |
|
| 2023 |
James Singh K, Huang WT, Hsiao FH, Miao WC, Lee TY, Pai YH, Kuo HC. Recent Advances in Micro-LEDs Having Yellow-Green to Red Emission Wavelengths for Visible Light Communications. Micromachines. 14. PMID 36838178 DOI: 10.3390/mi14020478 |
0.308 |
|
| 2022 |
Chang YH, Lin YS, James Singh K, Lin HT, Chang CY, Chen ZZ, Zhang YW, Lin SY, Kuo HC, Shih MH. AC-driven multicolor electroluminescence from a hybrid WSe monolayer/AlGaInP quantum well light-emitting device. Nanoscale. PMID 36562246 DOI: 10.1039/d2nr03725d |
0.353 |
|
| 2022 |
Tan GH, Chen YN, Chuang YT, Lin HC, Hsieh CA, Chen YS, Lee TY, Miao WC, Kuo HC, Chen LY, Wong KT, Lin HW. Highly Luminescent Earth-Benign Organometallic Manganese Halide Crystals with Ultrahigh Thermal Stability of Emission from 4 to 623 K. Small (Weinheim An Der Bergstrasse, Germany). e2205981. PMID 36507613 DOI: 10.1002/smll.202205981 |
0.32 |
|
| 2022 |
Lee TY, Hsieh TH, Miao WC, James Singh K, Li Y, Tu CC, Chen FC, Lu WC, Kuo HC. High-Reliability Perovskite Quantum Dots Using Atomic Layer Deposition Passivation for Novel Photonic Applications. Nanomaterials (Basel, Switzerland). 12. PMID 36500764 DOI: 10.3390/nano12234140 |
0.344 |
|
| 2022 |
Han S, Wen J, Cheng Z, Chen G, Jin S, Shou C, Kuo HC, Tu CC. Luminescence-guided and visibly transparent solar concentrators based on silicon quantum dots. Optics Express. 30: 26896-26911. PMID 36236873 DOI: 10.1364/OE.463353 |
0.312 |
|
| 2022 |
Lee TY, Huang YM, Chiang H, Chao CL, Hung CY, Kuo WH, Fang YH, Chu MT, Wu CI, Lin CC, Kuo HC. Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition. Optics Express. 30: 18552-18561. PMID 36221654 DOI: 10.1364/OE.455726 |
0.341 |
|
| 2022 |
Chang YH, Huang YM, Liou FJ, Chow CW, Liu Y, Kuo HC, Yeh CH, Gunawan WH, Hung TY, Jian YH. 2.805 Gbit/s high-bandwidth phosphor white light visible light communication utilizing an InGaN/GaN semipolar blue micro-LED. Optics Express. 30: 16938-16946. PMID 36221527 DOI: 10.1364/OE.455312 |
0.332 |
|
| 2022 |
Lin SH, Tseng MC, Horng RH, Lai S, Peng KW, Shen MC, Wuu DS, Lien SY, Kuo HC, Chen Z, Wu T. Thermal behavior of AlGaN-based deep-UV LEDs. Optics Express. 30: 16827-16836. PMID 36221517 DOI: 10.1364/OE.457740 |
0.335 |
|
| 2022 |
Li ZT, Zhang HW, Li JS, Cao K, Chen Z, Xu L, Ding XR, Yu BH, Tang Y, Ou JZ, Kuo HC, Yip HL. Perovskite-Gallium Nitride Tandem Light-Emitting Diodes with Improved Luminance and Color Tunability. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2201844. PMID 35596610 DOI: 10.1002/advs.202201844 |
0.352 |
|
| 2022 |
Sadhu AS, Huang YM, Chen LY, Kuo HC, Lin CC. Recent Advances in Colloidal Quantum Dots or Perovskite Quantum Dots as a Luminescent Downshifting Layer Embedded on Solar Cells. Nanomaterials (Basel, Switzerland). 12. PMID 35335798 DOI: 10.3390/nano12060985 |
0.317 |
|
| 2022 |
James Singh K, Ciou HH, Chang YH, Lin YS, Lin HT, Tsai PC, Lin SY, Shih MH, Kuo HC. Optical Mode Tuning of Monolayer Tungsten Diselenide (WSe) by Integrating with One-Dimensional Photonic Crystal through Exciton-Photon Coupling. Nanomaterials (Basel, Switzerland). 12. PMID 35159765 DOI: 10.3390/nano12030425 |
0.301 |
|
| 2021 |
Lin SH, Tseng MC, Peng KW, Lai S, Shen MC, Horng RH, Lien SY, Wuu DS, Kuo HC, Wu T, Chen Z. Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer. Optics Express. 29: 37835-37844. PMID 34808848 DOI: 10.1364/OE.441389 |
0.393 |
|
| 2021 |
Yeh YW, Lin SH, Hsu TC, Lai S, Lee PT, Lien SY, Wuu DS, Li G, Chen Z, Wu T, Kuo HC. Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs. Nanoscale Research Letters. 16: 164. PMID 34792678 DOI: 10.1186/s11671-021-03623-x |
0.309 |
|
| 2021 |
Huang YM, Chen JH, Liou YH, James Singh K, Tsai WC, Han J, Lin CJ, Kao TS, Lin CC, Chen SC, Kuo HC. High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots. Nanomaterials (Basel, Switzerland). 11. PMID 34685137 DOI: 10.3390/nano11102696 |
0.366 |
|
| 2021 |
Yan G, Hyun BR, Jiang F, Kuo HC, Liu Z. Exploring superlattice DBR effect on a micro-LED as an electron blocking layer. Optics Express. 29: 26255-26264. PMID 34614935 DOI: 10.1364/OE.433786 |
0.35 |
|
| 2021 |
Chen CC, Lin HT, Chang SP, Kuo HC, Hung HW, Chien KH, Chang YC, Shih MH. Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InGaN/GaN Multiple Quantum Wells. Nanoscale Research Letters. 16: 145. PMID 34529162 DOI: 10.1186/s11671-021-03576-1 |
0.334 |
|
| 2021 |
Hyun BR, Sher CW, Chang YW, Lin Y, Liu Z, Kuo HC. Dual Role of Quantum Dots as Color Conversion Layer and Suppression of Input Light for Full-Color Micro-LED Displays. The Journal of Physical Chemistry Letters. 6946-6954. PMID 34283594 DOI: 10.1021/acs.jpclett.1c00321 |
0.366 |
|
| 2021 |
Shao H, Chu C, Chuang CM, Hang S, Che J, Kou J, Tian K, Zhang Y, Zheng Q, Zhang ZH, Li Q, Kuo HC. Step-type quantum wells with slightly varied InN composition for GaN-based yellow micro light-emitting diodes. Applied Optics. 60: 3006-3012. PMID 33983194 DOI: 10.1364/AO.422257 |
0.304 |
|
| 2020 |
Liu Z, Lin CH, Hyun BR, Sher CW, Lv Z, Luo B, Jiang F, Wu T, Ho CH, Kuo HC, He JH. Micro-light-emitting diodes with quantum dots in display technology. Light, Science & Applications. 9: 83. PMID 33972498 DOI: 10.1038/s41377-020-0268-1 |
0.315 |
|
| 2020 |
Huang HH, Huang SK, Tsai YL, Wang SW, Lee YY, Weng SY, Kuo HC, Lin CC. Investigation on reliability of red micro-light emitting diodes with atomic layer deposition passivation layers. Optics Express. 28: 38184-38195. PMID 33379636 DOI: 10.1364/OE.411591 |
0.305 |
|
| 2020 |
Li JS, Tang Y, Li ZT, Li JX, Ding XR, Yu BH, Yu SD, Ou JZ, Kuo HC. Toward 200 Lumens per Watt of Quantum-Dot White-Light-Emitting Diodes by Reducing Reabsorption Loss. Acs Nano. PMID 33356139 DOI: 10.1021/acsnano.0c05735 |
0.337 |
|
| 2020 |
Chen LC, Chang YT, Tien CH, Yeh YC, Tseng ZL, Lee KL, Kuo HC. Red Light-Emitting Diodes with All-Inorganic CsPbI/TOPO Composite Nanowires Color Conversion Films. Nanoscale Research Letters. 15: 216. PMID 33196928 DOI: 10.1186/s11671-020-03430-w |
0.366 |
|
| 2020 |
Lai YY, Yeh YW, Tzou AJ, Chen YY, Wu YS, Cheng YJ, Kuo HC. Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS Photodetector. Nanomaterials (Basel, Switzerland). 10. PMID 32937762 DOI: 10.3390/Nano10091828 |
0.39 |
|
| 2020 |
Tang SY, Yang CC, Su TY, Yang TY, Wu SC, Hsu YC, Chen YZ, Lin TN, Shen JL, Lin HN, Chiu PW, Kuo HC, Chueh YL. Design of Core-Shell Quantum Dots-3D WS2 Nanowalls Hybrid Nanostructures with High-Performance Bifunctional Sensing Applications. Acs Nano. PMID 32813498 DOI: 10.1021/Acsnano.0C01264 |
0.42 |
|
| 2020 |
Chang L, Yeh YW, Hang S, Tian K, Kou J, Bi W, Zhang Y, Zhang ZH, Liu Z, Kuo HC. Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading. Nanoscale Research Letters. 15: 160. PMID 32761479 DOI: 10.1186/s11671-020-03372-3 |
0.339 |
|
| 2020 |
Huang YM, Singh KJ, Liu AC, Lin CC, Chen Z, Wang K, Lin Y, Liu Z, Wu T, Kuo HC. Advances in Quantum-Dot-Based Displays. Nanomaterials (Basel, Switzerland). 10. PMID 32640754 DOI: 10.3390/nano10071327 |
0.329 |
|
| 2020 |
Xuan T, Shi S, Wang L, Kuo HC, Xie RJ. Inkjet-Printed Quantum Dot Color Conversion Films for High Resolution and Full Color Micro Light-Emitting Diode (μLED) Displays. The Journal of Physical Chemistry Letters. PMID 32531168 DOI: 10.1021/acs.jpclett.0c01451 |
0.331 |
|
| 2020 |
Liu Z, Lin CH, Hyun BR, Sher CW, Lv Z, Luo B, Jiang F, Wu T, Ho CH, Kuo HC, He JH. Micro-light-emitting diodes with quantum dots in display technology. Light, Science & Applications. 9: 83. PMID 32411368 DOI: 10.1038/s41377-020-0268-1 |
0.315 |
|
| 2020 |
Lu B, Wang Y, Hyun B, Kuo H, Liu Z. Color Difference and Thermal Stability of Flexible Transparent InGaN/GaN Multiple Quantum Wells Mini-LED Arrays Ieee Electron Device Letters. 41: 1040-1043. DOI: 10.1109/Led.2020.2994143 |
0.37 |
|
| 2020 |
Chu C, Tian K, Che J, Shao H, Kou J, Zhang Y, Zhang Z, Kuo H. On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes Ieee Photonics Journal. 12: 1-7. DOI: 10.1109/Jphot.2020.2997343 |
0.397 |
|
| 2020 |
Chen L, Tien C, Tseng P, Tseng Z, Huang W, Xu Y, Kuo H. Effect of Washing Solvents on the Properties of Air-Synthesized Perovskite CsPbBr3 Quantum Dots for Quantum Dot-Based Light-Emitting Devices Ieee Access. 8: 159415-159423. DOI: 10.1109/Access.2020.3020594 |
0.397 |
|
| 2020 |
Huang C, Chang SH, Liaw B, Liu C, Chou C, Zhou J, Lin C, Kuo H, Song L, Li F, Liu X. Research on a Novel GaN-Based Converted Mini-LED Backlight Module via a Spectrum-Decouple System Ieee Access. 8: 138823-138833. DOI: 10.1109/Access.2020.3010026 |
0.388 |
|
| 2020 |
Chen SH, Huang Y, Chang Y, Lin Y, Liou F, Hsu Y, Song J, Choi J, Chow C, Lin C, Horng R, Chen Z, Han J, Wu T, Kuo H. High-bandwidth green semipolar (20-21) InGaN/GaN micro light-emitting diodes for visible light communication Acs Photonics. 7: 2228-2235. DOI: 10.1021/Acsphotonics.0C00764 |
0.414 |
|
| 2020 |
Li C, Yu P, Huang Y, Zhou Q, Wu J, Li Z, Tong X, Wen Q, Kuo H, Wang ZM. Dielectric metasurfaces: From wavefront shaping to quantum platforms Progress in Surface Science. 95: 100584. DOI: 10.1016/J.Progsurf.2020.100584 |
0.362 |
|
| 2019 |
Kang CY, Lin CH, Lin CH, Li TY, Huang Chen SW, Tsai CL, Sher CW, Wu TZ, Lee PT, Xu X, Zhang M, Ho CH, He JH, Kuo HC. Highly Efficient and Stable White Light-Emitting Diodes Using Perovskite Quantum Dot Paper. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1902230. PMID 31871872 DOI: 10.1002/advs.201902230 |
0.395 |
|
| 2019 |
He M, Wang C, Li J, Wu J, Zhang S, Kuo HC, Shao L, Zhao S, Zhang J, Kang F, Wei G. CsPbBr-CsPbBr composite nanocrystals for highly efficient pure green light emission. Nanoscale. PMID 31763640 DOI: 10.1039/C9Nr07096F |
0.34 |
|
| 2019 |
Lin CH, Kang CY, Verma A, Wu T, Pai YM, Chen TY, Tsai CL, Yang YZ, Sharma SK, Sher CW, Chen Z, Lee PT, Chung SR, Kuo HC. Ultrawide Color Gamut Perovskite and CdSe/ZnS Quantum-Dots-Based White Light-Emitting Diode with High Luminous Efficiency. Nanomaterials (Basel, Switzerland). 9. PMID 31540013 DOI: 10.3390/nano9091314 |
0.348 |
|
| 2019 |
Wu T, Lin Y, Peng Z, Chen H, Shangguan Z, Liu M, Chen SH, Lin CH, Kuo HC, Chen Z. Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes - Analysis on the parasitic peaks over wide ranges of temperature and injection density. Optics Express. 27: A1060-A1073. PMID 31510491 DOI: 10.1364/Oe.27.0A1060 |
0.399 |
|
| 2019 |
Shen CC, Hsu TC, Yeh YW, Kang CY, Lu YT, Lin HW, Tseng HY, Chen YT, Chen CY, Lin CC, Wu CH, Lee PT, Sheng Y, Chiu CH, Kuo HC. Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s. Nanoscale Research Letters. 14: 276. PMID 31414236 DOI: 10.1186/S11671-019-3107-7 |
0.326 |
|
| 2019 |
Kou J, Shen CC, Shao H, Che J, Hou X, Chu C, Tian K, Zhang Y, Zhang ZH, Kuo HC. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes. Optics Express. 27: A643-A653. PMID 31252844 DOI: 10.1364/Oe.27.00A643 |
0.438 |
|
| 2019 |
Chen LC, Tien CH, Chen DF, Ye ZT, Kuo HC. High-Uniformity Planar Mini-Chip-Scale Packaged LEDs with Quantum Dot Converter for White Light Source. Nanoscale Research Letters. 14: 182. PMID 31144059 DOI: 10.1186/S11671-019-2993-Z |
0.425 |
|
| 2019 |
Liang R, Hu R, Long H, Huang X, Dai J, Xu L, Ye L, Zhai T, Kuo HC, Chen C. Bio-Inspired Flexible Fluoropolymer Film for All-Mode Light Extraction Enhancement. Acs Applied Materials & Interfaces. PMID 31056914 DOI: 10.1021/Acsami.9B02942 |
0.398 |
|
| 2019 |
Dai J, Chen J, Li X, Zhang J, Long H, Kuo H, He Y, Chen C. Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction. Optics Letters. 44: 1944-1947. PMID 30985781 DOI: 10.1364/Ol.44.001944 |
0.408 |
|
| 2019 |
Chen LC, Tien CH, Ou SL, Lee KY, Tian J, Tseng ZL, Chen HT, Kuo H, Sun AC. Perovskite CsPbBr3 Quantum Dots Prepared Using Discarded Lead–Acid Battery Recycled Waste Energies. 12: 1117. DOI: 10.3390/En12061117 |
0.372 |
|
| 2019 |
Ye Z, Pai Y, Chen C, Kuo H, Chen L. A Light Guide Plate That Uses Asymmetric Intensity Distribution of Mini-LEDs for the Planar Illuminator Crystals. 9: 141. DOI: 10.3390/CRYST9030141 |
0.312 |
|
| 2019 |
Huang CY, Tai TY, Hong KB, Kuo H, Lu T. Analysis of Quality Factor Enhancement in the Monolithic InGaN/GaN Nanorod Array Applied Sciences. 9: 1295. DOI: 10.3390/App9071295 |
0.307 |
|
| 2019 |
Lin C, Verma A, Kang C, Pai Y, Chen T, Yang J, Sher C, Yang Y, Lee P, Lin C, Wu Y, Sharma SK, Wu T, Chung S, Kuo H. Hybrid-type white LEDs based on inorganic halide perovskite QDs: candidates for wide color gamut display backlights Photonics Research. 7: 579. DOI: 10.1364/Prj.7.000579 |
0.369 |
|
| 2019 |
Chen SH, Shen C, Wu T, Liao Z, Chen L, Zhou J, Lee C, Lin C, Lin C, Sher CW, Lee P, Tzou A, Chen Z, Kuo H. Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer Photonics Research. 7: 416-422. DOI: 10.1364/Prj.7.000416 |
0.485 |
|
| 2019 |
Liu X, Chen Y, Li D, Wang SW, Ting CC, Chen L, Ang KW, Qiu CW, Chueh YL, Sun X, Kuo H. Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors Photonics Research. 7: 311-317. DOI: 10.1364/Prj.7.000311 |
0.457 |
|
| 2019 |
Zhang Z, Kou J, Chen SH, Shao H, Che J, Chu C, Tian K, Zhang Y, Bi W, Kuo H. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes Photonics Research. 7: 0-0. DOI: 10.1364/Prj.7.0000B1 |
0.388 |
|
| 2019 |
Kou J, Chen SWH, Che J, Shao H, Chu C, Tian K, Zhang Y, Bi W, Zhang ZH, Kuo H. On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes Ieee Transactions On Nanotechnology. 18: 176-182. DOI: 10.1109/Tnano.2018.2879817 |
0.455 |
|
| 2019 |
Guo W, Chen N, Lu H, Su C, Lin Y, Chen G, Lu Y, Zheng L, Peng Z, Kuo H, Lin C, Wu T, Chen Z. The Impact of Luminous Properties of Red, Green, and Blue Mini-LEDs on the Color Gamut Ieee Transactions On Electron Devices. 66: 2263-2268. DOI: 10.1109/Ted.2019.2906321 |
0.414 |
|
| 2019 |
Chen Q, Dai J, Li X, Gao Y, Long H, Zhang Z, Chen C, Kuo H. Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design Ieee Electron Device Letters. 40: 1925-1928. DOI: 10.1109/Led.2019.2948952 |
0.392 |
|
| 2019 |
Kao H, Tsai C, Chi Y, Peng C, Leong S, Wang H, Cheng C, Wu W, Kuo H, Cheng W, Wu C, Lin G. Long-Term Thermal Stability of Single-Mode VCSEL Under 96-Gbit/s OFDM Transmission Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-9. DOI: 10.1109/Jstqe.2019.2908554 |
0.314 |
|
| 2019 |
Wu T, Liang S, Zheng L, Lin Y, Guo Z, Gao Y, Lu Y, Chen SH, Lee C, Zhou J, Kuo H, Chen Z. Assessment and Optimization of the Circadian Performance of Smartphone-Based Virtual Reality Displays Ieee Journal of the Electron Devices Society. 7: 358-367. DOI: 10.1109/Jeds.2019.2899646 |
0.329 |
|
| 2019 |
Long H, Dai J, Zhang Y, Wang S, Tan B, Zhang S, Xu L, Shan M, Feng ZC, Kuo H, Chen C. High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD Applied Physics Letters. 114: 42101. DOI: 10.1063/1.5074177 |
0.332 |
|
| 2019 |
Chen SH, Wang S, Hong K, Medin H, Chung C, Wu C, Su T, Lai F, Lee P, Kuo S, Kuo H, Chueh Y. Enhanced wavelength-selective photoresponsivity with a MoS2 bilayer grown conformally on a patterned sapphire substrate Journal of Materials Chemistry C. 7: 1622-1629. DOI: 10.1039/C8Tc04097D |
0.406 |
|
| 2019 |
Huang C, Liu T, Huang S, Chang K, Tai T, Kuan C, Chang JT, Lin R, Kuo H. Suppression of "volcano" morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy Results in Physics. 13: 102285. DOI: 10.1016/J.Rinp.2019.102285 |
0.411 |
|
| 2019 |
Tsai CT, Cheng CH, Kuo H, Lin GR. Toward high-speed visible laser lighting based optical wireless communications Progress in Quantum Electronics. 67: 100225. DOI: 10.1016/J.Pquantelec.2019.100225 |
0.404 |
|
| 2019 |
Huang Chen S, Wang H, Hu C, Chen Y, Wang H, Wang J, He W, Sun X, Chiu H, Kuo H, Wang W, Xu K, Li D, Liu X. Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method Journal of Alloys and Compounds. 804: 435-440. DOI: 10.1016/J.Jallcom.2019.07.021 |
0.403 |
|
| 2019 |
Manikandan A, Sriram P, Hsu K, Wang Y, Chen C, Shih Y, Yen T, Jeng H, Kuo H, Chueh Y. Electrochemically active novel amorphous carbon (a-C)/Cu3P peapod nanowires by low-temperature chemical vapor phosphorization reaction as high efficient electrocatalysts for hydrogen evolution reaction Electrochimica Acta. 318: 374-383. DOI: 10.1016/J.Electacta.2019.05.089 |
0.323 |
|
| 2019 |
Kang C, Lin C, Lin C, Li T, Chen SH, Tsai C, Sher C, Wu T, Lee P, Xu X, Zhang M, Ho C, He J, Kuo H. White Light-Emitting Diodes: Highly Efficient and Stable White Light-Emitting Diodes Using Perovskite Quantum Dot Paper (Adv. Sci. 24/2019). Advanced Science. 6: 1970143. DOI: 10.1002/Advs.201970143 |
0.365 |
|
| 2018 |
Lin CH, Pai YM, Lee CF, Verma A, Lin HY, Tu CC, Chen XY, Teng HS, Chen TM, Chen CH, Sher CW, Lee PT, Lin CC, Sharma SK, Kuo HC. Liquid Type Nontoxic Photoluminescent Nanomaterials for High Color Quality White-Light-Emitting Diode. Nanoscale Research Letters. 13: 411. PMID 30578467 DOI: 10.1186/s11671-018-2835-4 |
0.33 |
|
| 2018 |
Zhang ZH, Tian K, Chu C, Fang M, Zhang Y, Bi W, Kuo HC. Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes. Optics Express. 26: 17977-17987. PMID 30114079 DOI: 10.1364/Oe.26.017977 |
0.392 |
|
| 2018 |
Zhang ZH, Huang Chen SW, Chu C, Tian K, Fang M, Zhang Y, Bi W, Kuo HC. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency. Nanoscale Research Letters. 13: 122. PMID 29693213 DOI: 10.1186/s11671-018-2539-9 |
0.35 |
|
| 2018 |
Shen KC, Ku CT, Hsieh C, Kuo HC, Cheng YJ, Tsai DP. Deep-Ultraviolet Hyperbolic Metacavity Laser. Advanced Materials (Deerfield Beach, Fla.). e1706918. PMID 29633385 DOI: 10.1002/Adma.201706918 |
0.396 |
|
| 2018 |
Sher CW, Lin CH, Lin HY, Lin CC, Huang CH, Chen KJ, Li JR, Wang KY, Tu HH, Fu CC, Kuo HC. Correction: A high quality liquid-type quantum dot white light-emitting diode. Nanoscale. 10: 6214. PMID 29595205 DOI: 10.1039/C8Nr90065E |
0.398 |
|
| 2018 |
Tan CM, Singh P, Zhao W, Kuo HC. Physical Limitations of Phosphor layer thickness and concentration for White LEDs. Scientific Reports. 8: 2452. PMID 29403018 DOI: 10.1038/S41598-018-20883-3 |
0.383 |
|
| 2018 |
Liang R, Dai J, Xu L, Zhang Y, He J, Wang S, Chen J, Peng Y, Ye L, Kuo HC, Chen C. Interface Anchored Effect on Improving Working Stability of Deep Ultraviolet Light-Emitting Diode Using Graphene Oxide-based Fluoropolymer Encapsulant. Acs Applied Materials & Interfaces. PMID 29388430 DOI: 10.1021/Acsami.7B17668 |
0.384 |
|
| 2018 |
Pai Y, Lin C, Lee C, Lin C, Chen C, Kuo H, Ye Z. Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall Crystals. 8: 420. DOI: 10.3390/CRYST8110420 |
0.336 |
|
| 2018 |
Peng Z, Guo Z, Wu T, Zhuang P, Ye Z, Shi Y, Shih TM, Lu Y, Kuo H, Chen Z. Multi-Azimuth Failure Mechanisms in Phosphor-Coated White LEDs by Current Aging Stresses Applied Sciences. 8: 610. DOI: 10.3390/App8040610 |
0.367 |
|
| 2018 |
Cheng C, Shen C, Kao H, Hsieh D, Wang H, Yeh Y, Lu Y, Chen SH, Tsai C, Chi Y, Kao TS, Wu C, Kuo H, Lee P, Lin G. 850/940-nm VCSEL for optical communication and 3D sensing Opto-Electronic Advances. 1: 180005. DOI: 10.29026/Oea.2018.180005 |
0.4 |
|
| 2018 |
Kao H, Tsai C, Leong S, Peng C, Chi Y, Wang H, Kuo H, Wu C, Cheng W, Lin G. Single-mode VCSEL for pre-emphasis PAM-4 transmission up to 64 Gbit/s over 100-300 m in OM4 MMF Photonics Research. 6: 666-673. DOI: 10.1364/Prj.6.000666 |
0.301 |
|
| 2018 |
Hsu S, Huang Y, Kao Y, Kuo H, Horng R, Lin C. The Analysis of Dual-Junction Tandem Solar Cells Enhanced by Surface Dispensed Quantum Dots Ieee Photonics Journal. 10: 8400411. DOI: 10.1109/Jphot.2018.2865538 |
0.413 |
|
| 2018 |
Peng C, Tsai C, Wang H, Wu Y, Shih T, Huang JJ, Kuo H, Cheng W, Lin G, Wu CW. High-Temperature Insensitivity of 50-Gb/s 16-QAM-DMT Transmission by Using the Temperature-Compensated Vertical-Cavity Surface-Emitting Lasers Journal of Lightwave Technology. 36: 3332-3343. DOI: 10.1109/Jlt.2018.2839193 |
0.347 |
|
| 2018 |
Zheng L, Guo Z, Yan W, Lin Y, Lu Y, Kuo H, Chen Z, Zhu L, Wu T, Gao Y. Research on a Camera-Based Microscopic Imaging System to Inspect the Surface Luminance of the Micro-LED Array Ieee Access. 6: 51329-51336. DOI: 10.1109/Access.2018.2869778 |
0.355 |
|
| 2018 |
Santiago SRM, Caigas SP, Lin T, Yuan C, Shen J, Chiu C, Kuo H. Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells Rsc Advances. 8: 16419-16419. DOI: 10.1039/C8Ra90034E |
0.336 |
|
| 2018 |
Santiago SRM, Caigas SP, Lin T, Yuan C, Shen J, Chiu C, Kuo H. Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells Rsc Advances. 8: 15399-15404. DOI: 10.1039/C7Ra13108A |
0.403 |
|
| 2018 |
Wang S, Dai J, Hu J, Zhang S, Xu L, Long H, Chen J, Wan Q, Kuo H, Chen C. Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure Acs Photonics. 5: 3534-3540. DOI: 10.1021/Acsphotonics.8B00899 |
0.375 |
|
| 2018 |
Huang C, Tai T, Lin J, Chang T, Liu C, Lu T, Wu Y, Kuo H. Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing Acs Photonics. 5: 2724-2729. DOI: 10.1021/Acsphotonics.8B00471 |
0.354 |
|
| 2018 |
Yu H, Zheng Z, Mei Y, Xu R, Liu J, Yang H, Zhang B, Lu T, Kuo H. Progress and prospects of GaN-based VCSEL from near UV to green emission Progress in Quantum Electronics. 57: 1-19. DOI: 10.1016/J.Pquantelec.2018.02.001 |
0.475 |
|
| 2017 |
Mei Y, Weng GE, Zhang BP, Liu JP, Hofmann W, Ying LY, Zhang JY, Li ZC, Yang H, Kuo HC. Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'. Light, Science & Applications. 6: e16199. PMID 30167197 DOI: 10.1038/Lsa.2016.199 |
0.44 |
|
| 2017 |
Chen LC, Lin YS, Tang PW, Tai CY, Tseng ZL, Lin JH, Chen SH, Kuo HC. Unraveling current hysteresis effects in regular-type C60-CH3NH3PbI3 heterojunction solar cells. Nanoscale. PMID 29115332 DOI: 10.1039/C7Nr07001B |
0.326 |
|
| 2017 |
Zhang ZH, Chu C, Chiu CH, Lu TC, Li L, Zhang Y, Tian K, Fang M, Sun Q, Kuo HC, Bi W. UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections. Optics Letters. 42: 4533-4536. PMID 29088206 DOI: 10.1364/Ol.42.004533 |
0.445 |
|
| 2017 |
Li L, Zhang Y, Xu S, Bi W, Zhang ZH, Kuo HC. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes. Materials (Basel, Switzerland). 10. PMID 29073738 DOI: 10.3390/Ma10101221 |
0.468 |
|
| 2017 |
Lin HY, Pai YM, Shi JX, Chen XY, Lin CH, Weng CM, Chen TY, Lin CC, Charlton MDB, Huang YP, Chen CH, Chen HP, Kuo HC. Optimization of nano-honeycomb structures for flexible w-LEDs. Optics Express. 25: 20466-20476. PMID 29041727 DOI: 10.1364/Oe.25.020466 |
0.399 |
|
| 2017 |
Huang CY, Lin JJ, Chang TC, Liu CY, Tai TY, Hong KB, Lu TC, Kuo HC. Collective lasing behavior of monolithic GaN-InGaN core-shell nanorod lattice under room temperature. Nano Letters. PMID 28926272 DOI: 10.1021/Acs.Nanolett.7B02922 |
0.36 |
|
| 2017 |
Chi YC, Huang YF, Wu TC, Tsai CT, Chen LY, Kuo HC, Lin GR. Violet Laser Diode Enables Lighting Communication. Scientific Reports. 7: 10469. PMID 28874879 DOI: 10.1038/S41598-017-11186-0 |
0.399 |
|
| 2017 |
Kao HY, Tsai CT, Leong SF, Peng CY, Chi YC, Huang JJ, Kuo HC, Shih TT, Jou JJ, Cheng WH, Wu CH, Lin GR. Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission. Optics Express. 25: 16347-16363. PMID 28789140 DOI: 10.1364/Oe.25.016347 |
0.39 |
|
| 2017 |
Lin TN, Santiago SRM, Yuan CT, Chiu KP, Shen JL, Wang TC, Kuo HC, Chiu CH, Yao YC, Lee YJ. Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots. Scientific Reports. 7: 7108. PMID 28769094 DOI: 10.1038/s41598-017-07483-3 |
0.393 |
|
| 2017 |
Wang SW, Medina H, Hong KB, Wu CC, Qu Y, Manikandan A, Su TY, Lee PT, Huang ZQ, Wang Z, Chuang FC, Kuo HC, Chueh YL. Thermally Strained Band Gap Engineering of Transition Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors. Acs Nano. PMID 28753274 DOI: 10.1021/Acsnano.7B02444 |
0.311 |
|
| 2017 |
Tzou AJ, Chu KH, Lin IF, Østreng E, Fang YS, Wu XP, Wu BW, Shen CH, Shieh JM, Yeh WK, Chang CY, Kuo HC. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition. Nanoscale Research Letters. 12: 315. PMID 28454481 DOI: 10.1186/S11671-017-2082-0 |
0.367 |
|
| 2017 |
Shih TT, Chi YC, Wang RN, Wu CH, Huang JJ, Jou JJ, Lee TC, Kuo HC, Lin GR, Cheng WH. Efficient Heat Dissipation of Uncooled 400-Gbps (16×25-Gbps) Optical Transceiver Employing Multimode VCSEL and PD Arrays. Scientific Reports. 7: 46608. PMID 28417978 DOI: 10.1038/Srep46608 |
0.337 |
|
| 2017 |
Liao YK, Liu YT, Hsieh DH, Shen TL, Hsieh MY, Tzou AJ, Chen SC, Tsai YL, Lin WS, Chan SW, Shen YP, Cheng SJ, Chen CH, Wu KH, Chen HM, ... ... Kuo HC, et al. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition. Nanomaterials (Basel, Switzerland). 7. PMID 28383488 DOI: 10.3390/Nano7040078 |
0.344 |
|
| 2017 |
Chen SC, Wang SW, Kuo SY, Juang JY, Lee PT, Luo CW, Wu KH, Kuo HC. A Comprehensive Study of One-Step Selenization Process for Cu(In1-x Ga x )Se2 Thin Film Solar Cells. Nanoscale Research Letters. 12: 208. PMID 28330186 DOI: 10.1186/S11671-017-1993-0 |
0.361 |
|
| 2017 |
Kao H, Chi Y, Tsai C, Leong S, Peng C, Wang H, Huang JJ, Jou J, Shih T, Kuo H, Cheng W, Wu C, Lin G. Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber Photonics Research. 5: 507-515. DOI: 10.1364/Prj.5.000507 |
0.36 |
|
| 2017 |
Lin H, Sher C, Hsieh D, Chen X, Chen HP, Chen T, Lau K, Chen C, Lin C, Kuo H. Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold Photonics Research. 5: 411. DOI: 10.1364/Prj.5.000411 |
0.451 |
|
| 2017 |
Liu X, Gu H, Li K, Wang J, Wang L, Kuo H, Liu W, Chen L, Fang J, Liu M, Lin X, Xu K, Ao J. GaN Schottky Barrier Diodes on Free-Standing GaN Wafer Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0261710Jss |
0.407 |
|
| 2017 |
Tzou A, Hsieh D, Hong K, Lin D, Huang J, Chen T, Kao T, Chen Y, Lu T, Chen C, Kuo H, Chang C. High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop Ieee Transactions On Nanotechnology. 16: 355-358. DOI: 10.1109/Tnano.2016.2642146 |
0.488 |
|
| 2017 |
Ho S, Lee C, Tzou A, Kuo H, Wu Y, Huang J. Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure Ieee Transactions On Electron Devices. 64: 1505-1510. DOI: 10.1109/Ted.2017.2657683 |
0.349 |
|
| 2017 |
Liu C, Chen T, Huang J, Lin T, Huang C, Li X, Kuo H, Shen J, Chang C. Enhanced Color-Conversion Efficiency of Hybrid Nanostructured-Cavities InGaN/GaN Light-Emitting Diodes Consisting of Nontoxic InP Quantum Dots Ieee Journal of Selected Topics in Quantum Electronics. 23: 8027032. DOI: 10.1109/Jstqe.2017.2749973 |
0.49 |
|
| 2017 |
Hsu S, Ke L, Lin H, Chen T, Lin H, Chen Y, Chueh Y, Kuo H, Lin C. Fabrication of a Highly Stable White Light-Emitting Diode With Multiple-Layer Colloidal Quantum Dots Ieee Journal of Selected Topics in Quantum Electronics. 23: 7875439. DOI: 10.1109/Jstqe.2017.2681039 |
0.451 |
|
| 2017 |
Kao H, Chi Y, Peng C, Leong S, Chang C, Wu Y, Shih T, Huang JJ, Kuo H, Cheng W, Wu C, Lin G. Modal Linewidth Dependent Transmission Performance of 850-nm VCSELs With Encoding PAM-4 Over 100-m MMF Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2750414 |
0.311 |
|
| 2017 |
Tsai C, Peng C, Wu C, Leong S, Kao H, Wang H, Chen Y, Weng Z, Chi Y, Kuo H, Huang JJ, Lee T, Shih T, Jou J, Cheng W, et al. Multi-Mode VCSEL Chip with High-Indium-Density InGaAs/AlGaAs Quantum-Well Pairs for QAM-OFDM in Multi-Mode Fiber Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2703645 |
0.356 |
|
| 2017 |
Liu X, Gu H, Li K, Guo L, Zhu D, Lu Y, Wang J, Kuo H, Liu Z, Liu W, Chen L, Fang J, Ang KW, Xu K, Ao JP. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer Aip Advances. 7: 95305. DOI: 10.1063/1.4999810 |
0.407 |
|
| 2017 |
Huang CY, Chang KS, Huang CY, Lin YH, Peng WC, Yen HW, Lin RM, Kuo H. The origin and mitigation of volcano-like morphologies in micron-thick AlGaN/AlN heteroepitaxy Applied Physics Letters. 111: 72110. DOI: 10.1063/1.4999767 |
0.333 |
|
| 2017 |
Huang CY, Wu PY, Chang KS, Lin YH, Peng WC, Chang YY, Li JP, Yen HW, Wu Y, Miyake H, Kuo H. High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes Aip Advances. 7: 55110. DOI: 10.1063/1.4983708 |
0.41 |
|
| 2017 |
Cheng C, Huang T, Wu C, Chen MK, Chu CH, Wu Y, Shih M, Lee C, Kuo H, Tsai DP, Lin G. Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates Journal of Materials Chemistry C. 5: 607-617. DOI: 10.1039/C6Tc04318F |
0.461 |
|
| 2017 |
Zhang ZH, Chen SWH, Zhang Y, Li L, Wang SW, Tian K, Chu C, Fang M, Kuo H, Bi W. Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes Acs Photonics. 4: 1846-1850. DOI: 10.1021/Acsphotonics.7B00443 |
0.393 |
|
| 2016 |
Kuo CT, Hsu LH, Huang BH, Kuo HC, Lin CC, Cheng YJ. Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs. Applied Optics. 55: 7387-7391. PMID 27661378 DOI: 10.1364/Ao.55.007387 |
0.462 |
|
| 2016 |
Liu CY, Chen TP, Kao TS, Huang JK, Kuo HC, Chen YF, Chang CY. Color-conversion efficiency enhancement of quantum dots via selective area nano-rods light-emitting diodes. Optics Express. 24: 19978-19987. PMID 27557273 DOI: 10.1364/Oe.24.019978 |
0.486 |
|
| 2016 |
Lin HY, Wang SW, Lin CC, Tu ZY, Lee PT, Chen HM, Kuo HC. Effective optimization and analysis of white LED properties by using nano-honeycomb patterned phosphor film. Optics Express. 24: 19032-19039. PMID 27557183 DOI: 10.1364/Oe.24.019032 |
0.405 |
|
| 2016 |
Tzou AJ, Lin DW, Yu CR, Li ZY, Liao YK, Lin BC, Huang JK, Lin CC, Kao TS, Kuo HC, Chang CY. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer. Optics Express. 24: 11387-11395. PMID 27410067 DOI: 10.1364/Oe.24.011387 |
0.504 |
|
| 2016 |
Liao WC, Liao SW, Chen KJ, Hsiao YH, Chang SW, Kuo HC, Shih MH. Optimized Spiral Metal-Gallium-Nitride Nanowire Cavity for Ultra-High Circular Dichroism Ultraviolet Lasing at Room Temperature. Scientific Reports. 6: 26578. PMID 27220650 DOI: 10.1038/Srep26578 |
0.395 |
|
| 2016 |
Wang SW, Lin HY, Lin CC, Kao TS, Chen KJ, Han HV, Li JR, Lee PT, Chen HM, Hong MH, Kuo HC. Pulsed-laser micropatterned quantum-dot array for white light source. Scientific Reports. 6: 23563. PMID 27005829 DOI: 10.1038/Srep23563 |
0.477 |
|
| 2016 |
Lin TN, Inciong MR, Santiago SR, Yeh TW, Yang WY, Yuan CT, Shen JL, Kuo HC, Chiu CH. Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots. Scientific Reports. 6: 23260. PMID 26987403 DOI: 10.1038/Srep23260 |
0.405 |
|
| 2016 |
Hsieh MY, Lai FI, Chen WC, Hsieh MC, Hu HY, Yu P, Kuo HC, Kuo SY. Realizing omnidirectional light harvesting by employing hierarchical architecture for dye sensitized solar cells. Nanoscale. PMID 26899775 DOI: 10.1039/C5Nr07948A |
0.415 |
|
| 2016 |
Lin HY, Ye ZT, Lin CC, Chen KJ, Tu HH, Chen HM, Chen CH, Kuo HC. Improvement of light quality by ZrO2 film of chip on glass structure white LED. Optics Express. 24: A341-9. PMID 26832586 DOI: 10.1364/Oe.24.00A341 |
0.388 |
|
| 2016 |
Cheng CH, Tzou AJ, Chang JH, Chi YC, Lin YH, Shih MH, Lee CK, Wu CI, Kuo HC, Chang CY, Lin GR. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions. Scientific Reports. 6: 19757. PMID 26794268 DOI: 10.1038/Srep19757 |
0.393 |
|
| 2016 |
Tzou AJ, Hsieh DH, Chen SH, Liao YK, Li ZY, Chang CY, Kuo HC. An investigation of carbon-doping-induced current collapse in GaN-on-si high electron mobility transistors Electronics (Switzerland). 5. DOI: 10.3390/Electronics5020028 |
0.396 |
|
| 2016 |
Lin C, Lin H, Chen K, Wang S, Wang K, Li J, Chen H, Kuo H. Enhancing the efficiency of white LEDs via reflection Spie Newsroom. DOI: 10.1117/2.1201603.006232 |
0.343 |
|
| 2016 |
Yeh PS, Chang CC, Chen YT, Lin DW, Wu CC, He JH, Kuo HC. Blue resonant-cavity light-emitting diode with half milliwatt output power Proceedings of Spie - the International Society For Optical Engineering. 9768. DOI: 10.1117/12.2211663 |
0.459 |
|
| 2016 |
Liu CY, Huang CY, Wu PY, Huang JK, Kao TS, Zhou AJ, Lin DW, Wu YCS, Chang CY, Kuo HC. High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation Ieee Electron Device Letters. 37: 452-455. DOI: 10.1109/Led.2016.2532352 |
0.502 |
|
| 2016 |
Lin HY, Wang SW, Lin CC, Chen KJ, Han HV, Tu ZY, Tu HH, Chen TM, Shih MH, Lee PT, Chen HMP, Kuo HC. Excellent color quality of white-light-emitting diodes by embedding quantum dots in polymers material Ieee Journal On Selected Topics in Quantum Electronics. 22. DOI: 10.1109/Jstqe.2015.2441291 |
0.39 |
|
| 2016 |
Chi K, Hsieh D, Yen J, Chen X, Chen JJ, Kuo H, Yang Y, Shi J. 850-nm VCSELs With p-Type $\mathrm {{\delta }}$ -Doping in the Active Layers for Improved High-Speed and High-Temperature Performance Ieee Journal of Quantum Electronics. 52: 1-7. DOI: 10.1109/Jqe.2016.2611439 |
0.398 |
|
| 2016 |
Kao TS, Wu TT, Tsao CW, Lin JH, Lin DW, Huang SJ, Lu TC, Kuo HC, Wang SC, Su YK. Light Emission Characteristics of Nonpolar a-Plane GaN-Based Photonic Crystal Defect Cavities Ieee Journal of Quantum Electronics. 52. DOI: 10.1109/Jqe.2016.2587104 |
0.442 |
|
| 2016 |
Kuo YK, Chen FM, Lin BC, Chang JY, Shih YH, Kuo HC. Simulation and Experimental Study on Barrier Thickness of Superlattice Electron Blocking Layer in Near-Ultraviolet Light-Emitting Diodes Ieee Journal of Quantum Electronics. 52. DOI: 10.1109/Jqe.2016.2587100 |
0.475 |
|
| 2016 |
Li YJ, Chang JR, Chang SP, Lin BW, Yeh YH, Kuo HC, Cheng YJ, Chang CY. Multifacet Microrod Light-Emitting Diode with Full Visible Spectrum Emission Journal of Display Technology. 12: 951-956. DOI: 10.1109/Jdt.2016.2557841 |
0.455 |
|
| 2016 |
Tzou AJ, Hsieh DH, Chen SH, Li ZY, Chang CY, Kuo HC. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/5/055003 |
0.329 |
|
| 2016 |
Tsai YL, Lai KY, Lee MJ, Liao YK, Ooi BS, Kuo HC, He JH. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena Progress in Quantum Electronics. 49: 1-25. DOI: 10.1016/J.Pquantelec.2016.08.001 |
0.372 |
|
| 2015 |
Retamal JR, Oubei HM, Janjua B, Chi YC, Wang HY, Tsai CT, Ng TK, Hsieh DH, Kuo HC, Alouini MS, He JH, Lin GR, Ooi BS. 4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode. Optics Express. 23: 33656-66. PMID 26832029 DOI: 10.1364/Oe.23.033656 |
0.414 |
|
| 2015 |
Han HV, Lu AY, Lu LS, Huang JK, Li H, Hsu CL, Lin YC, Chiu MH, Suenaga K, Chu CW, Kuo HC, Chang WH, Li LJ, Shi Y. Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment. Acs Nano. PMID 26716765 DOI: 10.1021/Acsnano.5B06960 |
0.377 |
|
| 2015 |
Han HV, Lin HY, Lin CC, Chong WC, Li JR, Chen KJ, Yu P, Chen TM, Chen HM, Lau KM, Kuo HC. Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology. Optics Express. 23: 32504-15. PMID 26699040 DOI: 10.1364/Oe.23.032504 |
0.436 |
|
| 2015 |
Tsai YL, Wang SW, Huang JK, Hsu LH, Chiu CH, Lee PT, Yu P, Lin CC, Kuo HC. Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells. Optics Express. 23: A1434-41. PMID 26698792 DOI: 10.1364/Oe.23.0A1434 |
0.45 |
|
| 2015 |
Hsu LH, Kuo CT, Huang JK, Hsu SC, Lee HY, Kuo HC, Lee PT, Tsai YL, Hwang YC, Su CF, He JH, Lin SY, Cheng YJ, Lin CC. InN-based heterojunction photodetector with extended infrared response. Optics Express. 23: 31150-62. PMID 26698744 DOI: 10.1364/OE.23.031150 |
0.323 |
|
| 2015 |
Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/Srep18690 |
0.395 |
|
| 2015 |
Chen SC, Wu KH, Li JX, Yabushita A, Tang SH, Luo CW, Juang JY, Kuo HC, Chueh YL. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy. Scientific Reports. 5: 18354. PMID 26679958 DOI: 10.1038/Srep18354 |
0.328 |
|
| 2015 |
Sher CW, Lin CH, Lin HY, Lin CC, Huang CH, Chen KJ, Li JR, Wang KY, Tu HH, Fu CC, Kuo HC. A high quality liquid-type quantum dot white light-emitting diode. Nanoscale. PMID 26666455 DOI: 10.1039/C5Nr05676D |
0.423 |
|
| 2015 |
Tsai YL, Liu CY, Krishnan C, Lin DW, Chu YC, Chen TP, Shen TL, Kao TS, Charlton MD, Yu P, Lin CC, Kuo HC, He JH. Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals. Nanoscale. PMID 26666367 DOI: 10.1039/C5Nr05555E |
0.463 |
|
| 2015 |
Hsieh DH, Tzou AJ, Kao TS, Lai FI, Lin DW, Lin BC, Lu TC, Lai WC, Chen CH, Kuo HC. Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. Optics Express. 23: 27145-51. PMID 26480375 DOI: 10.1364/Oe.23.027145 |
0.472 |
|
| 2015 |
Ye ZT, Kuo HC, Chen CH. Optical and thermal design of light emitting diodes omnidirectional bulb. Applied Optics. 54: E94-E101. PMID 26479672 DOI: 10.1364/Ao.54.000E94 |
0.429 |
|
| 2015 |
Ye ZT, Kuo HC, Chen CH. Thin hollow light guide for high-efficiency planar illuminator. Applied Optics. 54: E23-9. PMID 26479658 DOI: 10.1364/Ao.54.000E23 |
0.4 |
|
| 2015 |
Sher CW, Chen KJ, Lin CC, Han HV, Lin HY, Tu ZY, Tu HH, Honjo K, Jiang HY, Ou SL, Horng RH, Li X, Fu CC, Kuo HC. Large-area, uniform white light LED source on a flexible substrate. Optics Express. 23: A1167-78. PMID 26406747 |
0.33 |
|
| 2015 |
Janjua B, Oubei HM, Durán Retamal JR, Ng TK, Tsai CT, Wang HY, Chi YC, Kuo HC, Lin GR, He JH, Ooi BS. Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication. Optics Express. 23: 18746-53. PMID 26191934 DOI: 10.1364/Oe.23.018746 |
0.408 |
|
| 2015 |
Chi YC, Hsieh DH, Tsai CT, Chen HY, Kuo HC, Lin GR. 450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM. Optics Express. 23: 13051-9. PMID 26074558 DOI: 10.1364/Oe.23.013051 |
0.36 |
|
| 2015 |
Chiang YC, Lin CC, Kuo HC. Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light. Nanoscale Research Letters. 10: 182. PMID 25977655 DOI: 10.1186/s11671-015-0885-4 |
0.399 |
|
| 2015 |
Li Y, Chang J, Chang S, Sou K, Cheng Y, Kuo H, Chang C. InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes Applied Physics Express. 8: 42101. DOI: 10.7567/Apex.8.042101 |
0.494 |
|
| 2015 |
Kao TS, Wu TT, Tsao CW, Lin JH, Lin DW, Huang SJ, Lu TC, Kuo HC, Wang SC, Su YK. Light emission characteristics of nonpolar a -plane GaN-based photonic crystal defect cavities Proceedings of Spie - the International Society For Optical Engineering. 9372. DOI: 10.1117/12.2078577 |
0.419 |
|
| 2015 |
Huang CH, Chen KJ, Tsai MT, Shih MH, Sun CW, Lee WI, Lin CC, Kuo HC. High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodes Journal of Photonics For Energy. 5: 057606. DOI: 10.1117/1.Jpe.5.057606 |
0.422 |
|
| 2015 |
Tzou AJ, Lin BC, Lee CY, Lin DW, Liao YK, Li ZY, Chi GC, Kuo HC, Chang CY. Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes Journal of Photonics For Energy. 5. DOI: 10.1117/1.Jpe.5.057604 |
0.493 |
|
| 2015 |
Lin BC, Huang JK, Chen KJ, Chiu SH, Tu ZY, Lin CC, Lee PT, Shih MH, Wang MT, Hwang JM, Kuo HC. Luminous efficiency enhancement of white light-emitting diodes by using a hybrid phosphor structure Journal of Photonics For Energy. 5. DOI: 10.1117/1.Jpe.5.057603 |
0.404 |
|
| 2015 |
Chiang YC, Lin BC, Chen KJ, Lin CC, Lee PT, Kuo HC. Innovative fabrication of wafer-level InGaN-based thin-film flip-chip light-emitting diodes Ieee Photonics Technology Letters. 27: 1457-1460. DOI: 10.1109/Lpt.2015.2425896 |
0.488 |
|
| 2015 |
Lu IC, Wei CC, Chen HY, Chen KZ, Huang CH, Chi KL, Shi JW, Lai FI, Hsieh DH, Kuo HC, Lin W, Chiu SW, Chen J. Very high bit-rate distance product using high-power single-mode 850-nm VCSEL with discrete multitone modulation formats through OM4 multimode fiber Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2421324 |
0.361 |
|
| 2015 |
Chen KJ, Lin CC, Han HV, Lee CY, Chien SH, Wang KY, Chiu SH, Tu ZY, Li JR, Chen TM, Li X, Shih MH, Kuo HC. Wide-range correlated color temperature light generation from resonant cavity hybrid quantum dot light-emitting diodes Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2404877 |
0.467 |
|
| 2015 |
Huang JK, Liu CY, Chen TP, Huang HW, Lai FI, Lee PT, Lin CH, Chang CY, Kao TS, Kuo HC. Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2389529 |
0.475 |
|
| 2015 |
Chang CY, Chen YH, Tsai YL, Kuo HC, Chen KP. Tunability and optimization of coupling efficiency in tamm plasmon modes Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2014.2375151 |
0.323 |
|
| 2015 |
Chen KJ, Hsu WH, Liao WC, Liao SW, Shih MH, Kuo HC. Lasing Characteristics of a Metal-Coated GaN Shallow Grating Structure at Room Temperature Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2014.2336536 |
0.382 |
|
| 2015 |
Hsu S, Chen Y, Tu Z, Han H, Lin S, Chen T, Kuo H, Lin C. Highly Stable and Efficient Hybrid Quantum Dot Light-Emitting Diodes Ieee Photonics Journal. 7: 1-10. DOI: 10.1109/Jphot.2015.2487138 |
0.49 |
|
| 2015 |
Lin TN, Huang JC, Shen JL, Chu CM, Yeh JM, Chen-Yang YW, Chiu CH, Kuo HC. Hybrid dendrimer/semiconductor nanostructures with efficient energy transfer via optical waveguiding Journal of Physical Chemistry C. 119: 5107-5112. DOI: 10.1021/Jp5111949 |
0.341 |
|
| 2015 |
Chiu CH, Lin YW, Tsai MT, Lin BC, Li ZY, Tu PM, Huang SC, Hsu E, Uen WY, Lee WI, Kuo HC. Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer Journal of Crystal Growth. 414: 258-262. DOI: 10.1016/J.Jcrysgro.2014.10.013 |
0.471 |
|
| 2015 |
Liao YK, Brossard M, Hsieh DH, Lin TN, Charlton MDB, Cheng SJ, Chen CH, Shen JL, Cheng LT, Hsieh TP, Lai FI, Kuo SY, Kuo HC, Savvidis PG, Lagoudakis PG. Highly efficient flexible hybrid nanocrystal-Cu(In,Ga)Se2 (CIGS) solar cells Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201401280 |
0.436 |
|
| 2014 |
Tsai MT, Chu CM, Huang CH, Wu YH, Chiu CH, Li ZY, Tu PM, Lee WI, Kuo HC. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes. Nanoscale Research Letters. 9: 2418. PMID 26088993 DOI: 10.1186/1556-276X-9-675 |
0.518 |
|
| 2014 |
Chiang YC, Lin BC, Chen KJ, Lin CC, Lee PT, Kuo HC. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface. Nanoscale Research Letters. 9: 2417. PMID 26088992 DOI: 10.1186/1556-276X-9-699 |
0.354 |
|
| 2014 |
Chang YA, Chen FM, Tsai YL, Chang CW, Chen KJ, Li SR, Lu TC, Kuo HC, Kuo YK, Yu P, Lin CC, Tu LW. Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. Optics Express. 22: A1334-42. PMID 25322188 DOI: 10.1364/Oe.22.0A1334 |
0.371 |
|
| 2014 |
Lee CY, Tzou AJ, Lin BC, Lan YP, Chiu CH, Chi GC, Chen CH, Kuo HC, Lin RM, Chang CY. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate. Nanoscale Research Letters. 9: 505. PMID 25258616 DOI: 10.1186/1556-276X-9-505 |
0.435 |
|
| 2014 |
Chen SC, Chen YJ, Chen WT, Yen YT, Kao TS, Chuang TY, Liao YK, Wu KH, Yabushita A, Hsieh TP, Charlton MD, Tsai DP, Kuo HC, Chueh YL. Toward omnidirectional light absorption by plasmonic effect for high-efficiency flexible nonvacuum Cu(In,Ga)Se2 thin film solar cells. Acs Nano. 8: 9341-8. PMID 25093682 DOI: 10.1021/Nn503320M |
0.412 |
|
| 2014 |
Han HV, Lin CC, Tsai YL, Chen HC, Chen KJ, Yeh YL, Lin WY, Kuo HC, Yu P. A highly efficient hybrid GaAs solar cell based on colloidal-quantum-dot-sensitization. Scientific Reports. 4: 5734. PMID 25034623 DOI: 10.1038/Srep05734 |
0.434 |
|
| 2014 |
Chen SC, Hsieh DH, Jiang H, Liao YK, Lai FI, Chen CH, Luo CW, Juang JY, Chueh YL, Wu KH, Kuo HC. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition. Nanoscale Research Letters. 9: 280. PMID 24959108 DOI: 10.1186/1556-276X-9-280 |
0.308 |
|
| 2014 |
Horng RH, Wu BR, Tien CH, Ou SL, Yang MH, Kuo HC, Wuu DS. Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates. Optics Express. 22: A179-87. PMID 24921994 DOI: 10.1364/Oe.22.00A179 |
0.456 |
|
| 2014 |
Yang W, Li J, Zhang Y, Huang PK, Lu TC, Kuo HC, Li S, Yang X, Chen H, Liu D, Kang J. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability. Scientific Reports. 4: 5166. PMID 24898569 DOI: 10.1038/Srep05166 |
0.451 |
|
| 2014 |
Lin CC, Han HV, Chen HC, Chen KJ, Tsai YL, Lin WY, Kuo HC, Yu P. Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells. Journal of Nanoscience and Nanotechnology. 14: 1051-63. PMID 24749412 DOI: 10.1166/Jnn.2014.9125 |
0.407 |
|
| 2014 |
Chen KJ, Han HV, Chen HC, Lin CC, Chien SH, Huang CC, Chen TM, Shih MH, Kuo HC. White light emitting diodes with enhanced CCT uniformity and luminous flux using ZrO2 nanoparticles. Nanoscale. 6: 5378-83. PMID 24706049 DOI: 10.1039/C3Nr06894C |
0.414 |
|
| 2014 |
Liu CY, Chen KJ, Lin DW, Lee CY, Lin CC, Chien SH, Shih MH, Chi GC, Chang CY, Kuo HC. Improvement of emission uniformity by using micro-cone patterned PDMS film. Optics Express. 22: 4516-22. PMID 24663772 DOI: 10.1364/Oe.22.004516 |
0.353 |
|
| 2014 |
Kuo SY, Hsieh MY, Han HV, Lai FI, Chuang TY, Yu P, Lin CC, Kuo HC. Flexible-textured polydimethylsiloxane antireflection structure for enhancing omnidirectional photovoltaic performance of Cu(In,Ga)Se2 solar cells. Optics Express. 22: 2860-7. PMID 24663578 DOI: 10.1364/Oe.22.002860 |
0.36 |
|
| 2014 |
Lin BC, Chen KJ, Wang CH, Chiu CH, Lan YP, Lin CC, Lee PT, Shih MH, Kuo YK, Kuo HC. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. Optics Express. 22: 463-9. PMID 24515006 DOI: 10.1364/Oe.22.000463 |
0.411 |
|
| 2014 |
Lee CY, Lan Y, Tu PM, Hsu SC, Lin C, Kuo H, Chi GC, Chang CY. Natural substrate lift-off technique for vertical light-emitting diodes Applied Physics Express. 7: 42103. DOI: 10.7567/Apex.7.042103 |
0.443 |
|
| 2014 |
Hsu L, Lin C, Han H, Lin D, Lo Y, Hwang Y, Kuo H. Enhanced photocurrent of a nitride–based photodetector with InN dot-like structures Optical Materials Express. 4: 2565. DOI: 10.1364/Ome.4.002565 |
0.467 |
|
| 2014 |
Lin BC, Chiu CH, Lee CY, Han HV, Tu PM, Chen TP, Li ZY, Lee PT, Lin CC, Chi GC, Chen CH, Fan B, Chang CY, Kuo HC. Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate Optical Materials Express. 4: 1632-1640. DOI: 10.1364/Ome.4.001632 |
0.472 |
|
| 2014 |
Sher C, Chen K, Lin C, Han H, Lin B, Wang K, Li J, Wang M, Hwang J, Shih M, Fu C, Kuo H. Enhancement of luminous efficiency by hybrid structure for warm white light-emitting diodes Journal of Solid State Lighting. 1: 9. DOI: 10.1186/2196-1107-1-9 |
0.403 |
|
| 2014 |
Chen CC, Lin HY, Li CH, Wu JH, Tu ZY, Lee LL, Jeng MS, Lin CC, Jou JH, Kuo HC. Enabling lambertian-like warm white organic light-emitting diodes with a yellow phosphor embedded flexible film International Journal of Photoenergy. 2014. DOI: 10.1155/2014/851371 |
0.368 |
|
| 2014 |
Chiang YC, Lin BC, Chen KJ, Chiu SH, Lin CC, Lee PT, Shih MH, Kuo HC. Efficiency and droop improvement in GaN-based high-voltage flip chip LEDs International Journal of Photoenergy. 2014. DOI: 10.1155/2014/385257 |
0.436 |
|
| 2014 |
Kuo SY, Hsieh MY, Hsieh DH, Kuo HC, Chen CH, Lai FI. Device modeling of the performance of Cu(In,Ga)Se2 solar cells with V-shaped bandgap profiles International Journal of Photoenergy. 2014. DOI: 10.1155/2014/186579 |
0.338 |
|
| 2014 |
Wang SW, Lin DW, Lee CY, Lin C, Kuo H. Improvement of carrier distribution by using thinner quantum well with different location Proceedings of Spie. 9003. DOI: 10.1117/12.2038402 |
0.414 |
|
| 2014 |
Shieh CY, Tsai MT, Li ZY, Kuo H, Chang JY, Chi GC, Lee W. High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate Journal of Nanophotonics. 8: 83081-83081. DOI: 10.1117/1.Jnp.8.083081 |
0.501 |
|
| 2014 |
Yeh PS, Yu MC, Lin JH, Huang CC, Liao YC, Lin DW, Fan JR, Kuo HC. GaN-based resonant-cavity LEDs featuring a si-diffusion-defined current blocking layer Ieee Photonics Technology Letters. 26: 2488-2491. DOI: 10.1109/Lpt.2014.2362297 |
0.404 |
|
| 2014 |
Li H, Yin Y, Chang C, Tsai C, Hsu Y, Lin D, Wu Y, Kuo H, Huang JJ. Mechanisms of the Asymmetric Light Output Enhancements in \(a\) -Plane GaN Light-Emitting Diodes With Photonic Crystals Ieee Journal of Quantum Electronics. 50: 1-6. DOI: 10.1109/Jqe.2014.2362552 |
0.451 |
|
| 2014 |
Li ZY, Lee CY, Lin DW, Lin BC, Shen KC, Chiu CH, Tu PM, Kuo HC, Uen WY, Horng RH, Chi GC, Chang CY. High-efficiency and crack-free ingan-based leds on a 6-inch si (111) substrate with a composite buffer layer structure and quaternary superlattices electron-blocking layers Ieee Journal of Quantum Electronics. 50: 354-363. DOI: 10.1109/Jqe.2014.2304460 |
0.471 |
|
| 2014 |
Chou Y, Li H, Yin Y, Wang Y, Lin Y, Lin D, Wu Y, Kuo H, Huang JJ. Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals Journal of Applied Physics. 115: 193107. DOI: 10.1063/1.4876655 |
0.375 |
|
| 2014 |
Chung CC, Tran BT, Han HV, Ho YT, Yu HW, Lin KL, Nguyen HQ, Yu P, Kuo HC, Chang EY. The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency Electronic Materials Letters. 10: 457-460. DOI: 10.1007/S13391-013-3202-3 |
0.399 |
|
| 2013 |
Hsu MH, Lin CC, Kuo HC. The metal grating design of plasmonic hybrid III-V/Si evanescent lasers. Optics Express. 21: 20210-9. PMID 24105566 DOI: 10.1364/Oe.21.020210 |
0.38 |
|
| 2013 |
Chang SP, Chang JR, Sou KP, Liu MC, Cheng YJ, Kuo HC, Chang CY. Electrically driven green, olivine, and amber color nanopyramid light emitting diodes. Optics Express. 21: 23030-5. PMID 24104218 DOI: 10.1364/Oe.21.023030 |
0.484 |
|
| 2013 |
Liao YK, Wang YC, Yen YT, Chen CH, Hsieh DH, Chen SC, Lee CY, Lai CC, Kuo WC, Juang JY, Wu KH, Cheng SJ, Lai CH, Lai FI, Kuo SY, ... Kuo HC, et al. Non-antireflective scheme for efficiency enhancement of Cu(In,Ga)Se2 nanotip array solar cells. Acs Nano. 7: 7318-29. PMID 23906340 DOI: 10.1021/Nn402976B |
0.305 |
|
| 2013 |
Lin TN, Huang LT, Shu GW, Yuan CT, Shen JL, Lin CA, Chang WH, Chiu CH, Lin DW, Lin CC, Kuo HC. Distance dependence of energy transfer from InGaN quantum wells to graphene oxide. Optics Letters. 38: 2897-9. PMID 23903173 DOI: 10.1364/Ol.38.002897 |
0.32 |
|
| 2013 |
Yin J, Yue C, Zang Y, Chiu CH, Li J, Kuo HC, Wu Z, Li J, Fang Y, Chen C. Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures. Nanoscale. 5: 4436-42. PMID 23579445 DOI: 10.1039/C3Nr00920C |
0.35 |
|
| 2013 |
Kuo SY, Hsieh MY, Han HV, Lai FI, Tsai YL, Yang JF, Chuang TY, Kuo HC. Dandelion-shaped nanostructures for enhancing omnidirectional photovoltaic performance. Nanoscale. 5: 4270-6. PMID 23549292 DOI: 10.1039/C3Nr00526G |
0.403 |
|
| 2013 |
Hsieh MY, Kuo SY, Han HV, Yang JF, Liao YK, Lai FI, Kuo HC. Enhanced broadband and omnidirectional performance of Cu(In,Ga)Se2 solar cells with ZnO functional nanotree arrays. Nanoscale. 5: 3841-6. PMID 23525200 DOI: 10.1039/C3Nr34079A |
0.372 |
|
| 2013 |
Chen KJ, Kuo HT, Chen HC, Shih MH, Wang CH, Chien SH, Chiu SH, Lin CC, Pan CJ, Kuo HC. High thermal stability of correlated color temperature using current compensation in hybrid warm white high-voltage LEDs. Optics Express. 21: A201-7. PMID 23482281 DOI: 10.1364/Oe.21.00A201 |
0.352 |
|
| 2013 |
Shu GW, Lin JY, Jian HT, Shen JL, Wang SC, Chou CL, Chou WC, Wu CH, Chiu CH, Kuo HC. Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells. Optics Express. 21: A123-30. PMID 23389263 DOI: 10.1364/Oe.21.00A123 |
0.375 |
|
| 2013 |
Chang CY, Huang HM, Lan YP, Lu TC, Kuo HC, Wang SC, Tu LW, Hsieh WF. Growth and characteristics of a-plane GaN/ZnO/GaN heterostructure Materials Research Society Symposium Proceedings. 1538: 303-307. DOI: 10.1557/Opl.2013.550 |
0.39 |
|
| 2013 |
Shieh CY, Li ZY, Kuo H, Chi GC. Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer Proceedings of Spie. 8625: 862529. DOI: 10.1117/12.2004465 |
0.491 |
|
| 2013 |
Chena KJ, Chen HC, Tsai KA, Lin CC, Tsai HH, Chien SH, Cheng BS, Hsu YJ, Shih MH, Kuo HC. High-quality quantum-dot-based full-color display technology by pulsed spray method Proceedings of Spie - the International Society For Optical Engineering. 8641. DOI: 10.1117/12.2004101 |
0.491 |
|
| 2013 |
Wu TT, Wu SH, Lu T, Kuo H, Wang SC. Fano resonances GaN-based high contrast grating surface-emitting lasers Proceedings of Spie. 8633. DOI: 10.1117/12.2002911 |
0.421 |
|
| 2013 |
Lin BC, Chen KJ, Han HV, Lan YP, Chiu CH, Lin CC, Shih MH, Lee PT, Kuo HC. Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL Ieee Photonics Technology Letters. 25: 2062-2065. DOI: 10.1109/Lpt.2013.2281068 |
0.463 |
|
| 2013 |
Chen KJ, Han HV, Lin BC, Chen HC, Shih MH, Chien SH, Wang KY, Tsai HH, Yu P, Lee PT, Lin CC, Kuo HC. Improving the angular color uniformity of hybrid phosphor structures in white light-emitting diodes Ieee Electron Device Letters. 34: 1280-1282. DOI: 10.1109/Led.2013.2278336 |
0.404 |
|
| 2013 |
Wang H, Yu P, Wu Y, Kuo H, Chang EY, Lin S. Projected Efficiency of Polarization-Matched p-In$_{\bm x}$Ga$_{\bm {1-x}}$N/i-In $_{\bm y}$Ga$_{\bm{1-y}}$N/n-GaN Double Heterojunction Solar Cells Ieee Journal of Photovoltaics. 3: 985-990. DOI: 10.1109/Jphotov.2013.2252953 |
0.36 |
|
| 2013 |
Chen KJ, Chen HC, Shih MH, Wang CH, Tsai HH, Chien SH, Lin CC, Kuo HC. Enhanced Luminous efficiency of WLEDs using a dual-layer structure of the remote phosphor package Journal of Lightwave Technology. 31: 1941-1945. DOI: 10.1109/Jlt.2013.2260322 |
0.403 |
|
| 2013 |
Chen KJ, Chen HC, Lin CC, Wang CH, Yeh CC, Tsai HH, Chien SH, Shih MH, Kuo HC. An investigation of the optical analysis in white light-Emitting diodes with conformal and remote phosphor structure Ieee/Osa Journal of Display Technology. 9: 915-920. DOI: 10.1109/Jdt.2013.2272644 |
0.408 |
|
| 2013 |
Huang JK, Lin DW, Shih MH, Lee KY, Chen JR, Huang HW, Kuo SY, Lin CH, Lee PT, Chi GC, Kuo HC. Investigation and comparison of the gan-based light-emitting diodes grown on high aspect ratio nano-cone and general micro-cone patterned sapphire substrate Ieee/Osa Journal of Display Technology. 9: 947-952. DOI: 10.1109/Jdt.2013.2270276 |
0.471 |
|
| 2013 |
Lin DW, Huang JK, Lee CY, Chang RW, Lan YP, Lin CC, Lee KY, Lin CH, Lee PT, Chi GC, Kuo HC. Enhanced light output power and growth mechanism of gan-based light-emitting diodes grown on cone-shaped SiO2 patterned template Ieee/Osa Journal of Display Technology. 9: 285-291. DOI: 10.1109/Jdt.2012.2230395 |
0.471 |
|
| 2013 |
Chen K, Kuo H, Chiang Y, Chen H, Wang C, Shih M, Lin C, Pan C, Kuo H. Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs Ieee\/Osa Journal of Display Technology. 9: 280-284. DOI: 10.1109/Jdt.2012.2227054 |
0.377 |
|
| 2013 |
Hsu Y, Sou K, Chang S, Hsu K, Shih MH, Kuo H, Cheng Y, Chang C. Room temperature ultraviolet GaN metal-coated nanorod laser Applied Physics Letters. 103: 191102. DOI: 10.1063/1.4828997 |
0.384 |
|
| 2013 |
Huang WH, Shieh JM, Pan FM, Shen CH, Huang JY, Wu TT, Kao MH, Hsiao TH, Yu P, Kuo HC, Lee CT. Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4818621 |
0.408 |
|
| 2013 |
Chen CC, Chiu CH, Chang SP, Shih MH, Kuo MY, Huang JK, Kuo H, Chen SP, Lee LL, Jeng MS. Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells Applied Physics Letters. 102: 11134. DOI: 10.1063/1.4775373 |
0.479 |
|
| 2013 |
Liao YK, Kuo SY, Hsieh MY, Lai FI, Kao MH, Cheng SJ, Chiou DW, Hsieh TP, Kuo HC. A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods Solar Energy Materials and Solar Cells. 117: 145-151. DOI: 10.1016/J.Solmat.2013.05.031 |
0.317 |
|
| 2012 |
Lin GR, Chi YC, Liao YS, Kuo HC, Liao ZW, Wang HL, Lin GC. A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission. Optics Express. 20: 13622-35. PMID 22714427 DOI: 10.1364/Oe.20.013622 |
0.367 |
|
| 2012 |
Chen SC, Liao YK, Chen HJ, Chen CH, Lai CH, Chueh YL, Kuo HC, Wu KH, Juang JY, Cheng SJ, Hsieh TP, Kobayashi T. Ultrafast carrier dynamics in Cu(In,Ga)Se₂ thin films probed by femtosecond pump-probe spectroscopy. Optics Express. 20: 12675-81. PMID 22714296 DOI: 10.1364/Oe.20.012675 |
0.304 |
|
| 2012 |
Chang SP, Sou KP, Chen CH, Cheng YJ, Huang JK, Lin CH, Kuo HC, Chang CY, Hsieh WF. Lasing action in gallium nitride quasicrystal nanorod arrays. Optics Express. 20: 12457-62. PMID 22714233 DOI: 10.1364/Oe.20.012457 |
0.419 |
|
| 2012 |
Chen TG, Yu P, Tsai YL, Shen CH, Shieh JM, Tsai MA, Kuo HC. Nano-patterned glass superstrates with different aspect ratios for enhanced light harvesting in a-Si:H thin film solar cells. Optics Express. 20: A412-7. PMID 22712090 DOI: 10.1364/Oe.20.00A412 |
0.416 |
|
| 2012 |
Chen HC, Chen KJ, Lin CC, Wang CH, Han HV, Tsai HH, Kuo HT, Chien SH, Shih MH, Kuo HC. Improvement in uniformity of emission by ZrO₂ nano-particles for white LEDs. Nanotechnology. 23: 265201. PMID 22700687 DOI: 10.1088/0957-4484/23/26/265201 |
0.392 |
|
| 2012 |
Chen HC, Chen KJ, Wang CH, Lin CC, Yeh CC, Tsai HH, Shih MH, Kuo HC, Lu TC. A novel randomly textured phosphor structure for highly efficient white light-emitting diodes. Nanoscale Research Letters. 7: 188. PMID 22424206 DOI: 10.1186/1556-276X-7-188 |
0.316 |
|
| 2012 |
Lin CC, Chen HC, Tsai YL, Han HV, Shih HS, Chang YA, Kuo HC, Yu P. Highly efficient CdS-quantum-dot-sensitized GaAs solar cells. Optics Express. 20: A319-26. PMID 22418681 DOI: 10.1364/Oe.20.00A319 |
0.397 |
|
| 2012 |
Chiu CH, Lin CC, Han HV, Liu CY, Chen YH, Lan YP, Yu P, Kuo HC, Lu TC, Wang SC, Chang CY. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks. Nanotechnology. 23: 045303. PMID 22222308 DOI: 10.1088/0957-4484/23/4/045303 |
0.49 |
|
| 2012 |
Chang CY, Huang HM, Lu T, Kuo H, Wang SC, Lai CM. Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures Mrs Proceedings. 1432: 79-84. DOI: 10.1557/Opl.2012.1136 |
0.429 |
|
| 2012 |
Kuo SY, Hsieh MY, Lai FI, Liao YK, Kao MH, Kuo HC. Modeling and optimization of sub-wavelength grating nanostructures on Cu(In,Ga)Se 2 solar cell Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nc14 |
0.41 |
|
| 2012 |
Chiu C, Tu P, Chang S, Lin C, Jang C, Li Z, Yang H, Zan H, Kuo H, Lu T, Wang S, Chang C. Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO$_{2}$ Nanorod-Array Depth Patterned Sapphire Substrate Japanese Journal of Applied Physics. 51: 04DG11. DOI: 10.1143/Jjap.51.04Dg11 |
0.511 |
|
| 2012 |
Chen C, Chiu C, Tu P, Kuo M, Shih MH, Huang J, Kuo H, Zan H, Chang C. Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.04Dg02 |
0.425 |
|
| 2012 |
Wang C, Chang S, Ku P, Lan Y, Lin C, Kuo H, Lu T, Wang S, Chang C. Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation Applied Physics Express. 5: 042101. DOI: 10.1143/Apex.5.042101 |
0.435 |
|
| 2012 |
Chiu C, Lee C, Liu C, Kuo H, Lin B, Hsu W, Lin C, Sheu J, Chang C. Enhancing light extraction from LEDs Spie Newsroom. DOI: 10.1117/2.1201209.004438 |
0.347 |
|
| 2012 |
Lin C, Chen K, Chen H, Tsai H, Chien S, Kuo H, Tsai K, Hsu Y, Shih M. Producing white light with multiple layers of colloidal quantum dots Spie Newsroom. DOI: 10.1117/2.1201206.004269 |
0.414 |
|
| 2012 |
Wang C, Lin C, Kuo H. Improving the efficiency of gallium nitride-based LEDs for high-power applications Spie Newsroom. DOI: 10.1117/2.1201202.004126 |
0.333 |
|
| 2012 |
Kuo H, Cheng YJ. MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color Proceedings of Spie. 8467. DOI: 10.1117/12.970434 |
0.423 |
|
| 2012 |
Chiu CH, Tu PM, Chang JR, Chang WT, Kuo H, Chang CY. Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier Proceedings of Spie. 8262: 826222. DOI: 10.1117/12.912226 |
0.44 |
|
| 2012 |
Huang S, Shen K, Tu P, Wuu D, Kuo H, Horng R. Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer Proceedings of Spie. 8262: 0-0. DOI: 10.1117/12.909580 |
0.504 |
|
| 2012 |
Lin C, Chen HC, Han HV, Tsai YL, Chang CH, Tsai MA, Kuo H, Yu P. Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots Proceedings of Spie. 8256: 825609. DOI: 10.1117/12.908514 |
0.438 |
|
| 2012 |
Chang S, Sou K, Chang J, Cheng Y, Li Y, Chen Y, Kuo H, Hsu K, Chang C. Lasing action in gallium nitride photonic quasicrystal nanorod arrays Proceedings of Spie. 8262. DOI: 10.1117/12.908308 |
0.428 |
|
| 2012 |
Chang S, Sou K, Chang J, Cheng Y, Li Y, Chen Y, Kuo H, Hsu K, Chang C. Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure Proceedings of Spie. 8278. DOI: 10.1117/12.908121 |
0.461 |
|
| 2012 |
Wang SC, Lu T, Kuo H. Recent advances on CW current injection blue VCSELs Proceedings of Spie. 8276: 827607. DOI: 10.1117/12.907056 |
0.424 |
|
| 2012 |
Huang HM, Lu T, Chang CY, Lan Y, Ling SC, Chan WW, Kuo H, Wang SC. Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates Proceedings of Spie. 8262. DOI: 10.1117/12.906635 |
0.404 |
|
| 2012 |
Chiu C, Hsu L, Lee C, Lin C, Lin B, Tu S, Chen Y, Liu C, Hsu W, Lan Y, Sheu J, Lu T, Chi G, Kuo H, Wang S, et al. Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates Ieee Photonics Technology Letters. 24: 1212-1214. DOI: 10.1109/Lpt.2012.2195779 |
0.457 |
|
| 2012 |
Kuo YK, Lin BC, Chang JY, Chen FM, Kuo HC. Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration Ieee Photonics Technology Letters. 24: 1039-1041. DOI: 10.1109/Lpt.2012.2192723 |
0.371 |
|
| 2012 |
Huang WH, Shieh JM, Pan FM, Shen CH, Lien YC, Tsai MA, Kuo HC, Dai BT, Yang FL. UV-visible light-trapping structure of loosely packed submicrometer silica sphere for amorphous silicon solar cells Ieee Electron Device Letters. 33: 1036-1038. DOI: 10.1109/Led.2012.2196974 |
0.44 |
|
| 2012 |
Chiu C, Lin C, Tu P, Huang S, Tu C, Li J, Li Z, Uen W, Zan H, Lu T, Kuo H, Wang S, Chang C. Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique Ieee Journal of Quantum Electronics. 48: 175-181. DOI: 10.1109/Jqe.2011.2170553 |
0.481 |
|
| 2012 |
Chen K, Chen H, Shih M, Wang C, Kuo M, Yang Y, Lin C, Kuo H. The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes Journal of Lightwave Technology. 30: 2256-2261. DOI: 10.1109/Jlt.2012.2195158 |
0.413 |
|
| 2012 |
Lin D, Lee C, Liu C, Han H, Lan Y, Lin C, Chi G, Kuo H. Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks Applied Physics Letters. 101: 233104. DOI: 10.1063/1.4768950 |
0.533 |
|
| 2012 |
Chang JR, Chang SP, Li YJ, Cheng YJ, Sou KP, Huang JK, Kuo H, Chang CY. Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars Applied Physics Letters. 100: 261103. DOI: 10.1063/1.4731629 |
0.445 |
|
| 2012 |
Huang H, Chang C, Lan Y, Lu T, Kuo H, Wang S. Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness Applied Physics Letters. 100: 261901. DOI: 10.1063/1.4730438 |
0.436 |
|
| 2012 |
Chen C, Huang H, Lu T, Kuo H, Sun C. Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode Applied Physics Letters. 100: 201905. DOI: 10.1063/1.4718524 |
0.38 |
|
| 2012 |
Wu YC, Chen YC, Chen T, Lee C, Chen KJ, Kuo H. Crystal structure characterization, optical and photoluminescent properties of tunable yellow- to orange-emitting Y2(Ca,Sr)F4S2:Ce3+ phosphors for solid-state lighting Journal of Materials Chemistry. 22: 8048-8056. DOI: 10.1039/C2Jm16882K |
0.376 |
|
| 2012 |
Chen HC, Lin C, Han HV, Chen KJ, Tsai YL, Chang YA, Shih MH, Kuo H, Yu P. Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film Solar Energy Materials and Solar Cells. 104: 92-96. DOI: 10.1016/J.Solmat.2012.05.003 |
0.44 |
|
| 2012 |
Chen HC, Chen KJ, Lin C, Wang CH, Yeh CC, Tsai HH, Shih MH, Kuo H. Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package Microelectronics Reliability. 52: 933-936. DOI: 10.1016/J.Microrel.2012.02.011 |
0.421 |
|
| 2012 |
Tseng PC, Tsai MA, Yu P, Kuo H. Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells Progress in Photovoltaics. 20: 135-142. DOI: 10.1002/Pip.1123 |
0.433 |
|
| 2012 |
Chen KJ, Chen HC, Tsai KA, Lin CC, Tsai HH, Chien SH, Cheng BS, Hsu YJ, Shih MH, Tsai CH, Shih HH, Kuo HC. Resonanta-enhanced fulla-color emission of quantuma dot-based display technology using a pulsed spray method Advanced Functional Materials. 22: 5138-5143. DOI: 10.1002/Adfm.201200765 |
0.487 |
|
| 2011 |
Tsai MA, Chen HC, Tseng PC, Yu P, Chiu CH, Kuo HC, Lin SH. Efficiency enhancement InGaP/GaAs dual-junction solar cell with subwavelength antireflection nanorod arrays. Journal of Nanoscience and Nanotechnology. 11: 10729-32. PMID 22408983 DOI: 10.1166/Jnn.2011.4089 |
0.301 |
|
| 2011 |
Chen HC, Lin CC, Han HW, Tsai YL, Chang CH, Wang HW, Tsai MA, Kuo HC, Yu P. Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers. Optics Express. 19: A1141-7. PMID 21935257 DOI: 10.1364/Oe.19.0A1141 |
0.449 |
|
| 2011 |
Lo MH, Cheng YJ, Liu MC, Kuo HC, Wang SC. Lasing at exciton transition in optically pumped gallium nitride nanopillars. Optics Express. 19: 17960-5. PMID 21935160 DOI: 10.1364/Oe.19.017960 |
0.363 |
|
| 2011 |
Liu CH, Chen CH, Chen SY, Yen YT, Kuo WC, Liao YK, Juang JY, Kuo HC, Lai CH, Chen LJ, Chueh YL. Large scale single-crystal Cu(In,Ga)Se2 nanotip arrays for high efficiency solar cell. Nano Letters. 11: 4443-8. PMID 21910452 DOI: 10.1021/Nl202673K |
0.388 |
|
| 2011 |
Kuo HC, Hung CW, Chen HC, Chen KJ, Wang CH, Sher CW, Yeh CC, Lin CC, Chen CH, Cheng YJ. Patterned structure of remote phosphor for phosphor-converted white LEDs. Optics Express. 19: A930-6. PMID 21747563 DOI: 10.1364/Oe.19.00A930 |
0.39 |
|
| 2011 |
Tsai MA, Han HW, Tsai YL, Tseng PC, Yu P, Kuo HC, Shen CH, Shieh JM, Lin SH. Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells. Optics Express. 19: A757-62. PMID 21747544 DOI: 10.1364/Oe.19.00A757 |
0.442 |
|
| 2011 |
Wu YC, Wang DY, Chen TM, Lee CS, Chen KJ, Kuo HC. A novel tunable green- to yellow-emitting β-YFS:Ce³+ phosphor for solid-state lighting. Acs Applied Materials & Interfaces. 3: 3195-9. PMID 21732602 DOI: 10.1021/Am2006965 |
0.396 |
|
| 2011 |
Tsai MA, Tseng PC, Chen HC, Kuo HC, Yu P. Enhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arrays. Optics Express. 19: A28-34. PMID 21263709 DOI: 10.1364/Oe.19.000A28 |
0.435 |
|
| 2011 |
Huang YY, Chen LY, Chang CH, Sun YH, Cheng YW, Ke MY, Lu YH, Kuo HC, Huang J. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays. Nanotechnology. 22: 045202. PMID 21157011 DOI: 10.1088/0957-4484/22/4/045202 |
0.469 |
|
| 2011 |
Chang S, Chang J, Huang J, Li J, Chen Y, Sou K, Li Y, Yang H, Hsu T, Lu T, Kuo H, Chang C. Fabrication and optical properties of green emission semipolar {1011} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays Mrs Proceedings. 1324. DOI: 10.1557/Opl.2011.962 |
0.332 |
|
| 2011 |
Lin DW, Lin C, Chiu CH, Lee CY, Yang YY, Li ZY, Lai WC, Lu T, Kuo H, Wang SC. GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template Journal of the Electrochemical Society. 158. DOI: 10.1149/2.003111Jes |
0.47 |
|
| 2011 |
Tsai M, Wang H, Yu P, Kuo H, Lin S. High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium–Tin-Oxide Nanorod by Glancing-Angle Deposition Japanese Journal of Applied Physics. 50: 052102. DOI: 10.1143/Jjap.50.052102 |
0.481 |
|
| 2011 |
Chen CC, Lin YH, Shih MH, Lin GR, Kuo H. Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dj09 |
0.37 |
|
| 2011 |
Chen C, Chiu C, Yang Y, Shih MH, Chen J, Li Z, Kuo H, Lu T. Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dg09 |
0.402 |
|
| 2011 |
Chiu C, Lin D, Lin C, Li Z, Chang W, Hsu H, Kuo H, Lu T, Wang S, Liao W, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N. Erratum: “Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates” Applied Physics Express. 4: 039201. DOI: 10.1143/Apex.4.039201 |
0.468 |
|
| 2011 |
Lo MH, Cheng YJ, Kuo H, Wang SC. Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars Applied Physics Express. 4: 22102. DOI: 10.1143/Apex.4.022102 |
0.371 |
|
| 2011 |
Chiu C, Lin D, Lin C, Li Z, Chang W, Hsu H, Kuo H, Lu T, Wang S, Liao W, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Applied Physics Express. 4: 12105. DOI: 10.1143/Apex.4.012105 |
0.459 |
|
| 2011 |
Kuo H, Lu T, Li Z, Wu T, Tu P, Chiu C, Chen S, Wang S, Chang C. Toward a high-performance, low-power microprojector with a surface-emitting blue laser Spie Newsroom. DOI: 10.1117/2.1201205.004195 |
0.345 |
|
| 2011 |
Chiu CH, Lin C, Deng D, Kuo H, Lau KM. Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate Proceedings of Spie. 8123: 0-0. DOI: 10.1117/12.893047 |
0.49 |
|
| 2011 |
Chiu CH, Lin DW, Li ZY, Ling SC, Kuo H, Lu T, Wang SC, Liao WT, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Proceedings of Spie. 7939. DOI: 10.1117/12.876656 |
0.444 |
|
| 2011 |
Lo MH, Cheng YJ, Kuo H, Wang SC. Fabrication and lasing characteristics of GaN nanopillars Proceedings of Spie. 7939. DOI: 10.1117/12.874151 |
0.434 |
|
| 2011 |
Chao C, Xuan R, Yen H, Chiu C, Fang Y, Li Z, Chen B, Lin C, Chiu C, Guo Y, Kuo H, Chen J, Cheng S. Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates Ieee Photonics Technology Letters. 23: 798-800. DOI: 10.1109/Lpt.2011.2134081 |
0.524 |
|
| 2011 |
Cheng BS, Chiu CH, Lo MH, Wu YL, Kuo HC, Lu TC, Cheng YJ, Wang SC, Huang KJ. Light output enhancement of UV light-emitting diodes with embedded distributed bragg reflector Ieee Photonics Technology Letters. 23: 642-644. DOI: 10.1109/Lpt.2011.2121057 |
0.478 |
|
| 2011 |
Lu T, Wu T, Chen S, Tu P, Li Z, Chen C, Chen C, Kuo H, Wang S, Zan H, Chang C. Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers Ieee Journal of Selected Topics in Quantum Electronics. 17: 1594-1602. DOI: 10.1109/Jstqe.2011.2116771 |
0.413 |
|
| 2011 |
Chiu C, Tu P, Lin C, Lin D, Li Z, Chuang K, Chang J, Lu T, Zan H, Chen C, Kuo H, Wang S, Chang C. Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates Ieee Journal of Selected Topics in Quantum Electronics. 17: 971-978. DOI: 10.1109/Jstqe.2010.2065794 |
0.48 |
|
| 2011 |
Lee Y, Lee C, Chen C, Lu T, Kuo H. Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect Ieee Journal of Selected Topics in Quantum Electronics. 17: 985-989. DOI: 10.1109/Jstqe.2010.2064287 |
0.421 |
|
| 2011 |
Huang H, Ling S, Chan W, Lu T, Kuo H, Wang S. Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates Ieee Journal of Quantum Electronics. 47: 1101-1106. DOI: 10.1109/Jqe.2011.2158632 |
0.457 |
|
| 2011 |
Chiu C, Lin C, Deng D, Lin D, Li J, Li Z, Shu G, Lu T, Shen J, Kuo H, Lau K. Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate Ieee Journal of Quantum Electronics. 47: 899-906. DOI: 10.1109/Jqe.2011.2114640 |
0.484 |
|
| 2011 |
Wu T, Lin C, Wu Y, Chen C, Lu T, Kuo H, Wang S. Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design Journal of Lightwave Technology. 29: 3757-3763. DOI: 10.1109/Jlt.2011.2172916 |
0.481 |
|
| 2011 |
Huang H, Lu T, Chang C, Ling S, Chan W, Kuo H, Wang S. Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates Journal of Lightwave Technology. 29: 2761-2765. DOI: 10.1109/Jlt.2011.2164896 |
0.399 |
|
| 2011 |
Lin CC, Chi YC, Kuo HC, Peng PC, Chang-Hasnain CJ, Lin GR. Beyond-bandwidth electrical pulse modulation of a TO-can packaged VCSEL for 10 Gbit/s injection-locked NRZ-to-RZ transmission Journal of Lightwave Technology. 29: 830-841. DOI: 10.1109/Jlt.2010.2103551 |
0.316 |
|
| 2011 |
Wang Y, Chang S, Chen C, Chiu C, Kuo M, Shih MH, Kuo H. Room temperature lasing with high group index in metal-coated GaN nanoring Applied Physics Letters. 99: 251111. DOI: 10.1063/1.3671648 |
0.343 |
|
| 2011 |
Huang S, Shen K, Wuu D, Tu P, Kuo H, Tu C, Horng R. Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance Journal of Applied Physics. 110: 123102. DOI: 10.1063/1.3669377 |
0.502 |
|
| 2011 |
Cheng BS, Wu YL, Lu TC, Chiu CH, Chen CH, Tu PM, Kuo HC, Wang SC, Chang CY. High Q microcavity light emitting diodes with buried AlN current apertures Applied Physics Letters. 99. DOI: 10.1063/1.3617418 |
0.469 |
|
| 2011 |
Shen CH, Shieh JM, Huang JY, Kuo HC, Hsu CW, Dai BT, Lee CT, Pan CL, Yang FL. Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability Applied Physics Letters. 99. DOI: 10.1063/1.3615650 |
0.365 |
|
| 2011 |
Tu P, Chang C, Huang S, Chiu C, Chang J, Chang W, Wuu D, Zan H, Lin C, Kuo H, Hsu C. Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier Applied Physics Letters. 98: 211107. DOI: 10.1063/1.3591967 |
0.463 |
|
| 2011 |
Wang YG, Chen CC, Chiu CH, Kuo MY, Shih MH, Kuo H. Lasing in metal-coated GaN nanostripe at room temperature Applied Physics Letters. 98: 131110. DOI: 10.1063/1.3572023 |
0.323 |
|
| 2011 |
Tseng PC, Yu P, Chen HC, Tsai YL, Han HW, Tsai MA, Chang CH, Kuo H. Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures Solar Energy Materials and Solar Cells. 95: 2610-2615. DOI: 10.1016/J.Solmat.2011.05.010 |
0.447 |
|
| 2011 |
Tseng P, Hsu M, Tsai M, Chu C, Kuo H, Yu P. Enhanced omnidirectional photon coupling via quasi-periodic patterning of indium-tin-oxide for organic thin-film solar cells Organic Electronics. 12: 886-890. DOI: 10.1016/J.Orgel.2011.03.002 |
0.41 |
|
| 2011 |
Chiu C, Lin D, Lin C, Li Z, Chen Y, Ling S, Kuo H, Lu T, Wang S, Liao W, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N. Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Journal of Crystal Growth. 318: 500-504. DOI: 10.1016/J.Jcrysgro.2010.10.054 |
0.419 |
|
| 2011 |
Wang CH, Ke CC, Chiu CH, Li JC, Kuo H, Lu T, Wang SC. Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method Journal of Crystal Growth. 315: 242-245. DOI: 10.1016/J.Jcrysgro.2010.09.046 |
0.445 |
|
| 2011 |
Deng D, Chiu C, Kuo H, Chen P, May Lau K. Material characteristics of InGaN based light emitting diodes grown on porous Si substrates Journal of Crystal Growth. 315: 238-241. DOI: 10.1016/J.Jcrysgro.2010.09.031 |
0.403 |
|
| 2010 |
Lu TC, Ke MY, Yang SC, Cheng YW, Chen LY, Lin GJ, Lu YH, He JH, Kuo HC, Huang J. Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. Optics Letters. 35: 4109-11. PMID 21165106 DOI: 10.1364/Ol.35.004109 |
0.499 |
|
| 2010 |
Huang HW, Lee KY, Huang JK, Lin CH, Lin CF, Yu CC, Kuo HC. Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth. Journal of Nanoscience and Nanotechnology. 10: 6363-8. PMID 21137731 DOI: 10.1166/Jnn.2010.2639 |
0.474 |
|
| 2010 |
Chen CP, Lin PH, Hung YJ, Hsu SS, Chen LY, Cheng YW, Ke MY, Huang YY, Chang CH, Chiu CH, Kuo HC, Huang J. Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes. Nanotechnology. 21: 215201. PMID 20431206 DOI: 10.1088/0957-4484/21/21/215201 |
0.329 |
|
| 2010 |
Chen C, Lin Y, Shih MH, Lin G, Kuo H. Light Enhancement of Si-Nanocrystals-Embedded SiOx film on Silicon-on-Insulator Substrate The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.P-9-9 |
0.366 |
|
| 2010 |
Chang S, Lu T, Zhuo L, Jang C, Lin D, Yang H, Kuo H, Wang S. Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate Journal of the Electrochemical Society. 157: H501. DOI: 10.1149/1.3327909 |
0.44 |
|
| 2010 |
Chang YA, Kuo H, Lu T, Lai FI, Kuo SY, Laih LW, Laih LH, Wang SC. Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration Japanese Journal of Applied Physics. 49: 122301. DOI: 10.1143/Jjap.49.122301 |
0.32 |
|
| 2010 |
Chiu C, Lin D, Li Z, Chiu C, Chao C, Tu C, Kuo H, Lu T, Wang S. Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth Japanese Journal of Applied Physics. 49: 105501. DOI: 10.1143/Jjap.49.105501 |
0.491 |
|
| 2010 |
Lai CF, Chao CH, Kuo H, Yu P, Yen HH, Yeh WY. GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dg09 |
0.424 |
|
| 2010 |
Lai CF, Chao CH, Kuo H, Yu P, Yen HH, Yeh WY. Divergent Far-Field III-Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dg08 |
0.397 |
|
| 2010 |
Huang H, Lin C, Huang Z, Lee K, Yu C, Kuo H. Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes Japanese Journal of Applied Physics. 49: 22101. DOI: 10.1143/Jjap.49.022101 |
0.486 |
|
| 2010 |
Lin P, Chen C, Hung Y, Hsu S, Chen L, Cheng Y, Ke M, Chiu CH, Kuo H, Huang JJ. Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p $^{+}$ -Si Photodiodes Ieee Photonics Technology Letters. 22: 1589-1591. DOI: 10.1109/Lpt.2010.2069557 |
0.383 |
|
| 2010 |
Yen H, Kuo H, Yeh W. Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO $_{x}$ Oxidation Ieee Photonics Technology Letters. 22: 1168-1170. DOI: 10.1109/Lpt.2010.2051424 |
0.387 |
|
| 2010 |
Chen J, Lu T, Kuo H, Fang KL, Huang KF, Kuo CW, Chang CJ, Kuo CT, Wang S. Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses Ieee Photonics Technology Letters. 22: 860-862. DOI: 10.1109/Lpt.2010.2046483 |
0.462 |
|
| 2010 |
Peng PC, Lan RL, Wu FM, Lin G, Lin CT, Chen JJ, Lin GR, Chi S, Kuo HC, Chi JY. Polarization characteristics of quantum-dot vertical-cavity surface-emitting laser with light injection Ieee Photonics Technology Letters. 22: 179-181. DOI: 10.1109/Lpt.2009.2037332 |
0.456 |
|
| 2010 |
Chen C, Chen J, Yang Y, Shih M-, Kuo H. Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector Journal of Lightwave Technology. 28: 3189-3192. DOI: 10.1109/Jlt.2010.2083634 |
0.394 |
|
| 2010 |
Lai C, Kuo H, Chao C, Yu P, Yeh W. Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals Journal of Lightwave Technology. 28: 2881-2889. DOI: 10.1109/Jlt.2010.2061836 |
0.458 |
|
| 2010 |
Lin G, Liao Y, Chi Y, Kuo H, Lin G, Wang H, Chen Y. Long-Cavity Fabry–Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application Journal of Lightwave Technology. 28: 2925-2932. DOI: 10.1109/Jlt.2010.2060470 |
0.334 |
|
| 2010 |
Huang HW, Lai FI, Huang JK, Lin CH, Lee KY, Lin CF, Yu CC, Kuo H. Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface Semiconductor Science and Technology. 25: 65007. DOI: 10.1088/0268-1242/25/6/065007 |
0.474 |
|
| 2010 |
Chang SP, Wang CH, Chiu CH, Li JC, Lu YS, Li ZY, Yang HC, Kuo H, Lu T, Wang SC. Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n -GaN layer Applied Physics Letters. 97: 251114. DOI: 10.1063/1.3531957 |
0.434 |
|
| 2010 |
Wang CH, Ke CC, Lee CY, Chang SP, Chang WT, Li JC, Li ZY, Yang HC, Kuo H, Lu T, Wang SC. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer Applied Physics Letters. 97: 261103. DOI: 10.1063/1.3531753 |
0.449 |
|
| 2010 |
Ko TS, Lu TC, Zhuo LF, Wang WL, Liang MH, Kuo HC, Wang SC, Chang L, Lin DY. Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3488898 |
0.425 |
|
| 2010 |
Li JC, Lu T, Huang HM, Chan WW, Kuo H, Wang SC. Characteristics of emission polarization in a -plane nanorods embedded with InGaN/GaN multiple quantum wells Journal of Applied Physics. 108: 63508. DOI: 10.1063/1.3483239 |
0.394 |
|
| 2010 |
Lu T, Chen SW, Wu TT, Tu PM, Chen CK, Chen C, Li ZY, Kuo H, Wang SC. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature Applied Physics Letters. 97: 71114. DOI: 10.1063/1.3483133 |
0.412 |
|
| 2010 |
Lai C, Kuo H, Yu P, Lu T, Chao C, Yen H, Yeh W. Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals Applied Physics Letters. 97: 13108. DOI: 10.1063/1.3459970 |
0.453 |
|
| 2010 |
Huang HW, Huang JK, Kuo SY, Lee KY, Kuo H. High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate Applied Physics Letters. 96: 263115. DOI: 10.1063/1.3456385 |
0.492 |
|
| 2010 |
Ling SC, Lu T, Chang SP, Chen JR, Kuo H, Wang SC. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes Applied Physics Letters. 96: 231101. DOI: 10.1063/1.3449557 |
0.437 |
|
| 2010 |
Deng D, Yu N, Wang Y, Zou X, Kuo H, Chen P, Lau KM. InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates Applied Physics Letters. 96: 201106. DOI: 10.1063/1.3427438 |
0.463 |
|
| 2010 |
Chen C, Shih MH, Yang Y, Kuo H. Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector Applied Physics Letters. 96: 151115. DOI: 10.1063/1.3399781 |
0.379 |
|
| 2010 |
Chen SW, Lu T, Hou YJ, Liu TC, Kuo H, Wang SC. Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers Applied Physics Letters. 96: 71108. DOI: 10.1063/1.3313947 |
0.332 |
|
| 2010 |
Yang HPD, Yeh ZE, Lin G, Kuo HC, Chi JY. InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications Microelectronics Reliability. 50: 688-691. DOI: 10.1016/J.Microrel.2010.01.044 |
0.442 |
|
| 2010 |
Huang HM, Ling SC, Chen JR, Ko TS, Li JC, Lu T, Kuo H, Wang SC. Growth and characterization of a-plane AlxGa1−xN alloys by metalorganic chemical vapor deposition Journal of Crystal Growth. 312: 869-873. DOI: 10.1016/J.Jcrysgro.2009.12.064 |
0.317 |
|
| 2010 |
Chang S, Yang H, Lu T, Kuo H, Wang S. Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN Journal of Crystal Growth. 312: 1307-1310. DOI: 10.1016/J.Jcrysgro.2009.11.059 |
0.37 |
|
| 2010 |
Chen JR, Wu YC, Ling SC, Ko TS, Lu T, Kuo H, Kuo YK, Wang SC. Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes Applied Physics B. 98: 779-789. DOI: 10.1007/S00340-009-3856-6 |
0.484 |
|
| 2009 |
Lai CF, Chi JY, Kuo HC, Yen HH, Lee CE, Chao CH, Hsueh HT, Yeh WY. Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals. Optics Express. 17: 8795-804. PMID 19466129 DOI: 10.1364/Oe.17.008795 |
0.425 |
|
| 2009 |
Pai YH, Meng FS, Lin CJ, Kuo HC, Hsu SH, Chang YC, Lin GR. Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate. Nanotechnology. 20: 035303. PMID 19417292 DOI: 10.1088/0957-4484/20/3/035303 |
0.35 |
|
| 2009 |
Liao YS, Kuo HC, Chen YJ, Lin GR. Side-mode transmission diagnosis of a multichannel selectable injection-locked Fabry-Perot Laser Diode with anti-reflection coated front facet. Optics Express. 17: 4859-67. PMID 19293917 DOI: 10.1364/Oe.17.004859 |
0.323 |
|
| 2009 |
Liu M, Cheng Y, Hsu S, Kuo H, Lu T, Wang S. Strong Exciton Polariton Dispersion in Multimode GaN Microcavity Mrs Proceedings. 1182: 49-53. DOI: 10.1557/Proc-1182-Ee13-03 |
0.383 |
|
| 2009 |
Chen JR, Lu TC, Kuo H, Wang SC. Investigation of Composition-Dependent Optical Phonon Modes in Al(x)Ga(1-x)N Epitaxial Layers Grown on Sapphire Substrates Mrs Proceedings. 1167: 77-82. DOI: 10.1557/Proc-1167-O07-05 |
0.33 |
|
| 2009 |
Yang MD, Wu SW, Shu GW, Wang JS, Shen JL, Wu CH, Lin CAJ, Chang WH, Lin TY, Lu TC, Kuo HC. Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters Journal of Nanomaterials. 2009: 1-5. DOI: 10.1155/2009/840791 |
0.356 |
|
| 2009 |
Lee CE, Cheng BS, Lee YC, Kuo HC, Lu TC, Wang SC. Output power enhancement of vertical-injection ultraviolet light-emitting Diodes by GaN-free and surface roughness structures Electrochemical and Solid-State Letters. 12: H44-H46. DOI: 10.1149/1.3046003 |
0.428 |
|
| 2009 |
Li Z, Uen W, Lo M, Chiu C, Lin P, Hung C, Lu T, Kuo H, Wang S, Huang Y. Enhancing the Emission Efficiency of In0.2Ga0.8N ∕ GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3033401 |
0.35 |
|
| 2009 |
Cheng BS, Lee CE, Kuo HC, Lu TC, Wang SC. Power enhancement of GaN-based flip-chip light-emitting diodes with triple roughened surfaces Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.04C115 |
0.458 |
|
| 2009 |
Ling S, Wang T, Chen J, Liu P, Ko T, Chang B, Lu T, Kuo H, Wang S, Tsay J. Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire Ieee Photonics Technology Letters. 21: 1130-1132. DOI: 10.1109/Lpt.2009.2023234 |
0.421 |
|
| 2009 |
Hsueh T, Sheu J, Lai W, Wang Y, Kuo H, Wang S. Improvement of the Efficiency of InGaN–GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process Ieee Photonics Technology Letters. 21: 414-416. DOI: 10.1109/Lpt.2009.2012872 |
0.43 |
|
| 2009 |
Lee C, Lai C, Lee Y, Kuo H, Lu T, Wang S. Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface Ieee Photonics Technology Letters. 21: 331-333. DOI: 10.1109/Lpt.2008.2010953 |
0.428 |
|
| 2009 |
Huang H, Lin C, Huang Z, Lee K, Yu C, Kuo H. Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns Ieee Electron Device Letters. 30: 1152-1154. DOI: 10.1109/Led.2009.2029985 |
0.468 |
|
| 2009 |
Lee YC, Kuo HC, Cheng BS, Lee CE, Chiu CH, Lu TC, Wang SC, Liao TF, Chang CS. Enhanced light extraction in wafer-bonded AlGaInP-based light-emitting diodes via micro- and nanoscale surface textured Ieee Electron Device Letters. 30: 1054-1056. DOI: 10.1109/Led.2009.2028445 |
0.429 |
|
| 2009 |
Lai F-, Ling SC, Hsieh CE, Hsueh TH, Kuo H, Lu T. Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide Ieee Electron Device Letters. 30: 496-498. DOI: 10.1109/Led.2009.2016766 |
0.431 |
|
| 2009 |
Tansu N, Schubert EF, Kuo HC, Smowton PM. Introduction to the issue on solid-state lighting Ieee Journal On Selected Topics in Quantum Electronics. 15: 1025-1027. DOI: 10.1109/Jstqe.2009.2021694 |
0.321 |
|
| 2009 |
Wu Y, Chiu C, Chang C, Yu P, Kuo H. Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs Ieee Journal of Selected Topics in Quantum Electronics. 15: 1226-1233. DOI: 10.1109/Jstqe.2009.2015583 |
0.409 |
|
| 2009 |
Lai CF, Chi JY, Kuo HC, Yen HH, Lee CE, Chao CH, Yeh WY, Lu TC. Far-field and near-field distribution of gan-based photonic crystal leds with guided mode extraction Ieee Journal On Selected Topics in Quantum Electronics. 15: 1234-1241. DOI: 10.1109/Jstqe.2009.2015582 |
0.358 |
|
| 2009 |
Lee Y, Chiu C, Ke CC, Lin PC, Lu T, Kuo H, Wang S. Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate Ieee Journal of Selected Topics in Quantum Electronics. 15: 1137-1143. DOI: 10.1109/Jstqe.2009.2014967 |
0.453 |
|
| 2009 |
Lu T, Chen J, Chen S, Kuo H, Kuo C, Lee C, Wang S. Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers Ieee Journal of Selected Topics in Quantum Electronics. 15: 850-860. DOI: 10.1109/Jstqe.2009.2013181 |
0.44 |
|
| 2009 |
Peng PC, Lin G, Kuo HC, Yeh CE, Liu JN, Lin CT, Chen J, Chi S, Chi JY, Wang SC. Dynamic characteristics and linewidth enhancement factor of quantum-dot vertical-cavity surface-emitting lasers Ieee Journal On Selected Topics in Quantum Electronics. 15: 844-849. DOI: 10.1109/Jstqe.2008.2011375 |
0.372 |
|
| 2009 |
Huang S, Horng R, Shi J, Kuo H, Wuu D. High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications Journal of Lightwave Technology. 27: 4084-4094. DOI: 10.1109/Jlt.2009.2022283 |
0.432 |
|
| 2009 |
Wen YC, Ko TS, Lu T, Kuo H, Chyi JI, Sun CK. Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling Physical Review B. 80: 195201. DOI: 10.1103/Physrevb.80.195201 |
0.307 |
|
| 2009 |
Chang Y, Li Z, Kuo H, Lu T, Yang S, Lai L, Lai L, Wang S. Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process Semiconductor Science and Technology. 24: 85007. DOI: 10.1088/0268-1242/24/8/085007 |
0.366 |
|
| 2009 |
Lo MH, Tu PM, Wang CH, Cheng YJ, Hung CW, Hsu SC, Kuo H, Zan H, Wang SC, Chang CY, Liu CM. Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes Applied Physics Letters. 95: 211103. DOI: 10.1063/1.3266859 |
0.372 |
|
| 2009 |
Shieh JM, Huang JY, Yu WC, Huang JD, Wang YC, Chen CW, Wang CK, Huang WH, Cho AT, Kuo HC, Dai BT, Yang FL, Pan CL. Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica Applied Physics Letters. 95. DOI: 10.1063/1.3240888 |
0.301 |
|
| 2009 |
Lo MH, Tu PM, Wang CH, Hung CW, Hsu SC, Cheng YJ, Kuo H, Zan H, Wang SC, Chang CY, Huang SC. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface Applied Physics Letters. 95: 41109. DOI: 10.1063/1.3190504 |
0.486 |
|
| 2009 |
Ling S, Chao C, Chen J, Liu P, Ko T, Lu T, Kuo H, Wang S, Cheng S, Tsay J. Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density Applied Physics Letters. 94: 251912. DOI: 10.1063/1.3158954 |
0.392 |
|
| 2009 |
Shieh JM, Yu WC, Huang JY, Wang CK, Dai BT, Jhan HY, Hsu CW, Kuo HC, Yang FL, Pan CL. Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector Applied Physics Letters. 94. DOI: 10.1063/1.3156806 |
0.391 |
|
| 2009 |
Lee Y, Lin S, Chiu C, Lu T, Kuo H, Wang S, Chhajed S, Kim JK, Schubert EF. Erratum: “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays” [Appl. Phys. Lett. 94, 141111 (2009)] Applied Physics Letters. 94: 219901. DOI: 10.1063/1.3144242 |
0.428 |
|
| 2009 |
Lai C, Chao C, Kuo H, Yen H, Lee C, Yeh W. Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes Applied Physics Letters. 94: 123106. DOI: 10.1063/1.3106109 |
0.433 |
|
| 2009 |
Chiu CH, Kuo SY, Lo MH, Ke CC, Wang TC, Lee YT, Kuo H, Lu T, Wang SC. Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions Journal of Applied Physics. 105: 63105. DOI: 10.1063/1.3083074 |
0.43 |
|
| 2009 |
Li ZY, Lo MH, Chiu CH, Lin PC, Lu T, Kuo H, Wang SC. Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates Journal of Applied Physics. 105: 13103. DOI: 10.1063/1.3055264 |
0.391 |
|
| 2009 |
Huang HW, Lin CH, Huang JK, Lee KY, Lin CF, Yu CC, Tsai JY, Hsueh R, Kuo HC, Wang SC. Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 164: 76-79. DOI: 10.1016/J.Mseb.2009.07.006 |
0.486 |
|
| 2009 |
Li Z, Lu T, Kuo H, Wang S, Lo M, Lau KM. HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice Journal of Crystal Growth. 311: 3089-3092. DOI: 10.1016/J.Jcrysgro.2009.01.098 |
0.465 |
|
| 2009 |
Huang HH, Chao CL, Chi TW, Chang YL, Liu PC, Tu LW, Tsay JD, Kuo HC, Cheng SJ, Lee WI. Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure Journal of Crystal Growth. 311: 3029-3032. DOI: 10.1016/J.Jcrysgro.2009.01.071 |
0.343 |
|
| 2009 |
Yu P, Chang C, Chiu C, Yang C, Yu J, Kuo H, Hsu S, Chang Y. Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns Advanced Materials. 21: 1618-1621. DOI: 10.1002/Adma.200802563 |
0.393 |
|
| 2008 |
Huang HW, Lin CH, Yu CC, Lee BD, Chiu CH, Lai CF, Kuo HC, Leung KM, Lu TC, Wang SC. Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography. Nanotechnology. 19: 185301. PMID 21825687 DOI: 10.1088/0957-4484/19/18/185301 |
0.448 |
|
| 2008 |
Lai CF, Chi JY, Kuo HC, Chao CH, Hsueh HT, Wang JF, Yeh WY. Anisotropy of light extraction from GaN two-dimensional photonic crystals. Optics Express. 16: 7285-94. PMID 18545434 DOI: 10.1364/Oe.16.007285 |
0.412 |
|
| 2008 |
Lo M, Li Z, Chen S, Hong J, Lu T, Kuo H, Wang S. AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique Mrs Proceedings. 1068: 101-106. DOI: 10.1557/Proc-1068-C05-07 |
0.361 |
|
| 2008 |
Yang CC, Lin CF, Jiang RH, Liu HC, Lin CM, Chang CY, Wuu DS, Kuo H, Wang SC. Wet mesa etching process in InGaN-based light emitting diodes Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2908196 |
0.419 |
|
| 2008 |
Yang HPD, Yeh ZE, Lai FI, Kuo HC, Chi JY. Characteristics of multileaf holey light-emitting diodes for fiber-optic communications Japanese Journal of Applied Physics. 47: 974-976. DOI: 10.1143/Jjap.47.974 |
0.448 |
|
| 2008 |
Yen H, Kuo H, Yeh W. Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode Japanese Journal of Applied Physics. 47: 8808-8810. DOI: 10.1143/Jjap.47.8808 |
0.378 |
|
| 2008 |
Lu TC, Chu JT, Chen SW, Cheng BS, Kuo HC, Wang SC. Lasing behavior, gain property, and strong coupling effects in GaN-based vertical-cavity surface-emitting lasers Japanese Journal of Applied Physics. 47: 6655-6659. DOI: 10.1143/Jjap.47.6655 |
0.419 |
|
| 2008 |
Peng PC, Yeh CE, Kuo HC, Xuan R, Lin CT, Lin G, Chi S, Chi JY. Relative intensity noise characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 47: 6357-6358. DOI: 10.1143/Jjap.47.6357 |
0.438 |
|
| 2008 |
Chiu CH, Lee CE, Lo MH, Huang HW, Lu T, Kuo H, Wang SC. Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids Japanese Journal of Applied Physics. 47: 2954-2956. DOI: 10.1143/Jjap.47.2954 |
0.41 |
|
| 2008 |
Chiu C, Chao C, Lo M, Cheng Y, Kuo H, Yu P, Lu T, Wang S, Lau KM. Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD Proceedings of Spie. 7135. DOI: 10.1117/12.804291 |
0.488 |
|
| 2008 |
Yu P, Tsai M, Chiu C, Kuo H, Wu Y. Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Proceedings of Spie. 7135. DOI: 10.1117/12.804065 |
0.393 |
|
| 2008 |
Wu YR, Yu P, Chiu CH, Chang CY, Kuo H. Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar Proceedings of Spie. 7058: 0-0. DOI: 10.1117/12.800658 |
0.365 |
|
| 2008 |
Lee C, Lee Y, Kuo H, Lu T, Wang S. Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface Ieee Photonics Technology Letters. 20: 803-805. DOI: 10.1109/Lpt.2008.921129 |
0.453 |
|
| 2008 |
Lee C, Lee Y, Kuo H, Lu T, Wang S. High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers Ieee Photonics Technology Letters. 20: 659-661. DOI: 10.1109/Lpt.2008.919509 |
0.423 |
|
| 2008 |
Lee Y, Lee C, Kuo H, Lu T, Wang S. Enhancing the Light Extraction of (Al $_{x}$ Ga $_{1 - x}$ ) $_{0.5}$ In $_{0.5}$ P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping Ieee Photonics Technology Letters. 20: 369-371. DOI: 10.1109/Lpt.2008.916905 |
0.457 |
|
| 2008 |
Lee Y, Kuo H, Lee C, Lu T, Wang S. High-Performance (Al $_{x}$ Ga $_{1 - x}$ ) $_{0.5}$ In $_{0.5}$ P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure Ieee Photonics Technology Letters. 20: 1950-1952. DOI: 10.1109/Lpt.2008.2005507 |
0.448 |
|
| 2008 |
Chen J, Ko T, Su P, Lu T, Kuo H, Kuo Y, Wang S. Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes Journal of Lightwave Technology. 26: 3155-3165. DOI: 10.1109/Jlt.2008.926939 |
0.433 |
|
| 2008 |
Yang HPD, Hsu IC, Chang YH, Lai FI, Yu HC, Lin G, Hsiao RS, Maleev NA, Blokhin SA, Kuo HC, Chi JY. Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers Journal of Lightwave Technology. 26: 1387-1395. DOI: 10.1109/Jlt.2008.922172 |
0.449 |
|
| 2008 |
Chiu C, Lo M, Lu T, Yu P, Huang HW, Kuo H, Wang S. Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks Journal of Lightwave Technology. 26: 1445-1454. DOI: 10.1109/Jlt.2008.922157 |
0.472 |
|
| 2008 |
Lee Y, Kuo H, Lu T, Wang S, Ng KW, Lau KM, Yang Z, Chang AS, Lin S. Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces Journal of Lightwave Technology. 26: 1455-1463. DOI: 10.1109/Jlt.2008.922151 |
0.517 |
|
| 2008 |
Chen J, Ko T, Lu T, Chang Y, Kuo H, Kuo Y, Tsai J, Laih L, Wang S. Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs Journal of Lightwave Technology. 26: 1891-1900. DOI: 10.1109/Jlt.2008.920639 |
0.425 |
|
| 2008 |
Chen J, Lee C, Ko T, Chang Y, Lu T, Kuo H, Kuo Y, Wang S. Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers Journal of Lightwave Technology. 26: 329-337. DOI: 10.1109/Jlt.2007.909908 |
0.416 |
|
| 2008 |
Cheng BS, Chiu CH, Huang KJ, Lai CF, Kuo HC, Lin CH, Lu TC, Wang SC, Yu CC. Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/5/055002 |
0.477 |
|
| 2008 |
Lee YC, Lee CE, Lu T, Kuo H, Wang SC. Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate Semiconductor Science and Technology. 23: 45013. DOI: 10.1088/0268-1242/23/4/045013 |
0.405 |
|
| 2008 |
Lee CE, Lee YC, Kuo H, Tsai MR, Lu T, Wang SC. High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure Semiconductor Science and Technology. 23: 25015. DOI: 10.1088/0268-1242/23/2/025015 |
0.477 |
|
| 2008 |
Huang HW, Lin CH, Yu CC, Lee BD, Kuo H, Leung KM, Wang SC. Investigation of InGaN/GaN power chip light emitting diodes with TiO2/SiO2 omnidirectional reflector Semiconductor Science and Technology. 23: 125006. DOI: 10.1088/0268-1242/23/12/125006 |
0.468 |
|
| 2008 |
Hsu CC, Lin JH, Chen YS, Lin YH, Kuo HC, Wang SC, Hsieh WF, Tansu N, Mawst LJ. Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/085107 |
0.419 |
|
| 2008 |
Yang HPD, Hsu IC, Lai FI, Lin G, Hsiao RS, Kuo HC, Chi JY. Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range Journal of Modern Optics. 55: 1013-1021. DOI: 10.1080/09500340701576288 |
0.46 |
|
| 2008 |
Li ZY, Lo MH, Hung CT, Chen SW, Lu T, Kuo H, Wang SC. High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers Applied Physics Letters. 93: 131116. DOI: 10.1063/1.2996566 |
0.461 |
|
| 2008 |
Chiu C, Yen H, Chao C, Li Z, Yu P, Kuo H, Lu T, Wang S, Lau KM, Cheng SJ. Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template Applied Physics Letters. 93: 81108. DOI: 10.1063/1.2969062 |
0.502 |
|
| 2008 |
Yu P, Chiu CH, Wu YR, Yen HH, Chen JR, Kao CC, Yang HW, Kuo H, Lu T, Yeh WY, Wang SC. Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Applied Physics Letters. 93: 81110. DOI: 10.1063/1.2965461 |
0.351 |
|
| 2008 |
Lai CF, Chi JY, Yen HH, Kuo HC, Chao CH, Hsueh HT, Wang JFT, Huang CY, Yeh WY. Polarized light emission from photonic crystal light-emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2938885 |
0.409 |
|
| 2008 |
Lu T, Kao CC, Kuo H, Huang GS, Wang SC. CW lasing of current injection blue GaN-based vertical cavity surface emitting laser Applied Physics Letters. 92: 141102. DOI: 10.1063/1.2908034 |
0.43 |
|
| 2008 |
Lu T, Chen S, Lin L, Kao T, Kao C, Yu P, Kuo H, Wang S, Fan S. GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕GaN distributed Bragg reflector Applied Physics Letters. 92: 011129. DOI: 10.1063/1.2831716 |
0.406 |
|
| 2008 |
Peng PC, Wu FM, Lin C, Chen J, Kao WC, Shih PT, Jiang WJ, Kuo H, Chi S. 40 GHz phase shifter based on semiconductor laser Electronics Letters. 44: 520-521. DOI: 10.1049/El:20080457 |
0.303 |
|
| 2008 |
Chu C, Ko T, Chang Y, Lu T, Kuo H, Wang S. Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissions Materials Science and Engineering B-Advanced Functional Solid-State Materials. 147: 276-279. DOI: 10.1016/J.Mseb.2007.08.024 |
0.36 |
|
| 2008 |
Yang C, Dai J, Jiang RH, Zheng J, Lin C, Kuo H, Wang S. Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids Journal of Physics and Chemistry of Solids. 69: 589-592. DOI: 10.1016/J.Jpcs.2007.07.112 |
0.433 |
|
| 2008 |
Chen J, Ling S, Hung C, Ko T, Lu T, Kuo H, Wang S. High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 4871-4875. DOI: 10.1016/J.Jcrysgro.2008.08.025 |
0.346 |
|
| 2008 |
Chiu C, Li Z, Chao C, Lo M, Kuo H, Yu P, Lu T, Wang S, Lau KM, Cheng SJ. Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate Journal of Crystal Growth. 310: 5170-5174. DOI: 10.1016/J.Jcrysgro.2008.06.051 |
0.526 |
|
| 2008 |
Ko T, Chu C, Chen J, Lu T, Kuo H, Wang S. Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperatures Journal of Crystal Growth. 310: 2264-2267. DOI: 10.1016/J.Jcrysgro.2007.11.173 |
0.354 |
|
| 2008 |
Yen HH, Kuo H, Yeh WY. Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography Physica Status Solidi (C). 5: 2152-2154. DOI: 10.1002/Pssc.200778495 |
0.404 |
|
| 2008 |
Lai CF, Kuo HC, Chao CH, Hsueh HT, Wang JFT, Yeh WY, Chi JY, Lu TC, Wang SC. Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2099-2101. DOI: 10.1002/Pssc.200778453 |
0.4 |
|
| 2007 |
Cheng YJ, Chu JT, Kuo H, Lu T, Wang SC. Room-Temperature Polaritons in InGaN Microcavities Frontiers in Optics. DOI: 10.1364/Fio.2007.Pdp_B8 |
0.343 |
|
| 2007 |
Huang SY, Horng R, Kuo H, Wuu DS. Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2778860 |
0.325 |
|
| 2007 |
Yang HPD, Chen IL, Lee CH, Chiou CH, Lee TD, Hsu IC, Lai FI, Lin G, Kuo HC, Chi JY. Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers Japanese Journal of Applied Physics, Part 2: Letters. 46. DOI: 10.1143/Jjap.46.L509 |
0.437 |
|
| 2007 |
Yang HPD, Hsu IC, Lai FI, Lin G, Kuo HC, Chi JY. Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications Japanese Journal of Applied Physics, Part 2: Letters. 46. DOI: 10.1143/Jjap.46.L326 |
0.35 |
|
| 2007 |
Yang HPD, Hsu IC, Lai FI, Lin G, Hsiao RS, Maleev NA, Blokhin SA, Kuo HC, Chi JY. Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 6670-6672. DOI: 10.1143/Jjap.46.6670 |
0.455 |
|
| 2007 |
Wang SC, Lu T, Kao CC, Chu JT, Huang GS, Kuo H, Chen SW, Kao TT, Chen JR, Lin LF. Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics Japanese Journal of Applied Physics. 46: 5397-5407. DOI: 10.1143/Jjap.46.5397 |
0.463 |
|
| 2007 |
Chen HG, Hsu NF, Chu JT, Yao HH, Lu T, Kuo H, Wang SC. Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process Japanese Journal of Applied Physics. 46: 2574-2577. DOI: 10.1143/Jjap.46.2574 |
0.427 |
|
| 2007 |
Lee YC, Lee CE, Cheng BS, Lu TC, Kuo HC, Wang SC, Chiou SW. High-performance 650 nm resonant-cavity light-emitting diodes for plastic optical-fiber application Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 2450-2453. DOI: 10.1143/Jjap.46.2450 |
0.425 |
|
| 2007 |
Lee C, Lee Y, Kuo H, Tsai M, Cheng BS, Lu T, Wang S, Kuo C. Correction to "Enhancement of Flip-Chip Light-Emitting Diodes With Omni-Directional Reflector and Textured Micropillar Arrays" Ieee Photonics Technology Letters. 19: 1404-1404. DOI: 10.1109/Lpt.2007.904998 |
0.425 |
|
| 2007 |
Lee CE, Lee YJ, Kuo HC, Tsai MR, Cheng BS, Lu TC, Wang SC, Kuo CT. Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays Ieee Photonics Technology Letters. 19: 1200-1202. DOI: 10.1109/Lpt.2007.901718 |
0.463 |
|
| 2007 |
Lu T, Kao T, Kao C, Chu J, Yeh K, Lin L, Peng Y, Huang H, Kuo H, Wang S. GaN-Based High- $Q$ Vertical-Cavity Light-Emitting Diodes Ieee Electron Device Letters. 28: 884-886. DOI: 10.1109/Led.2007.904906 |
0.48 |
|
| 2007 |
Lee Y, Lu T, Kuo H, Wang S. High Brightness GaN-Based Light-Emitting Diodes Ieee\/Osa Journal of Display Technology. 3: 118-125. DOI: 10.1109/Jdt.2007.894380 |
0.503 |
|
| 2007 |
Chiu CH, Lu T, Huang HW, Lai CF, Kao CC, Chu JT, Yu CC, Kuo H, Wang SC, Lin CF, Hsueh TH. Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands Nanotechnology. 18: 445201. DOI: 10.1088/0957-4484/18/44/445201 |
0.439 |
|
| 2007 |
Chiu CH, Lo MH, Lai CF, Lu T, Huang HW, Chang YA, Hsueh TH, Yu CC, Kuo H, Wang SC, Lin CF, Kuo YK. Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching Nanotechnology. 18: 335706. DOI: 10.1088/0957-4484/18/33/335706 |
0.39 |
|
| 2007 |
Chiu CH, Kuo H, Lee CE, Lin CH, Cheng PC, Huang HW, Lu T, Wang SC, Leung KM. Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors Semiconductor Science and Technology. 22: 831-835. DOI: 10.1088/0268-1242/22/7/029 |
0.484 |
|
| 2007 |
Lin G, Lin C, Kuo H. Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array Applied Physics Letters. 91: 093122. DOI: 10.1063/1.2778352 |
0.46 |
|
| 2007 |
Lai CF, Yu P, Wang TC, Kuo H, Lu T, Wang SC, Lee CK. Lasing characteristics of a GaN photonic crystal nanocavity light source Applied Physics Letters. 91: 41101. DOI: 10.1063/1.2759467 |
0.387 |
|
| 2007 |
Lin G, Chang Y, Liu E, Kuo H, Lin H. Low refractive index Si nanopillars on Si substrate Applied Physics Letters. 90: 181923. DOI: 10.1063/1.2736281 |
0.335 |
|
| 2007 |
Ko TS, Lu T, Wang TC, Lo MH, Chen JR, Gao RC, Kuo H, Wang SC, Shen JL. Optical characteristics of a-plane InGaN∕GaN multiple quantum wells with different well widths Applied Physics Letters. 90: 181122. DOI: 10.1063/1.2735935 |
0.42 |
|
| 2007 |
Lee YJ, Lin PC, Lu T, Kuo H, Wang SC. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes Applied Physics Letters. 90: 161115. DOI: 10.1063/1.2722672 |
0.445 |
|
| 2007 |
Lin G, Lin C, Kuo H, Lin H, Kao C. Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask Applied Physics Letters. 90: 143102. DOI: 10.1063/1.2719152 |
0.359 |
|
| 2007 |
Shieh JM, Lai YF, Ni WX, Kuo HC, Fang CY, Huang JY, Pan CL. Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer Applied Physics Letters. 90. DOI: 10.1063/1.2450653 |
0.391 |
|
| 2007 |
Yang HPD, Hsu IC, Lai FI, Lin G, Hsiao RS, Maleev NA, Blokhin SA, Kuo HC, Chi JY. Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs Optics Communications. 274: 94-99. DOI: 10.1016/J.Optcom.2007.01.063 |
0.448 |
|
| 2007 |
Huang H, Kao C, Chu J, Wang W, Lu T, Kuo H, Wang S, Yu C, Kuo S. Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method Materials Science and Engineering B-Advanced Functional Solid-State Materials. 136: 182-186. DOI: 10.1016/J.Mseb.2006.09.030 |
0.465 |
|
| 2007 |
Huang G, Kuo H, Lo M, Lu T, Tsai J, Wang S. Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers Journal of Crystal Growth. 305: 55-58. DOI: 10.1016/J.Jcrysgro.2007.04.022 |
0.398 |
|
| 2007 |
Ko TS, Wang TC, Gao RC, Chen HG, Huang GS, Lu T, Kuo H, Wang SC. Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition Journal of Crystal Growth. 300: 308-313. DOI: 10.1016/J.Jcrysgro.2006.12.046 |
0.36 |
|
| 2007 |
Huang GS, Lu T, Yao HH, Kuo H, Wang SC, Sun G, Lin Cw, Chang L, Soref RA. GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition Journal of Crystal Growth. 298: 687-690. DOI: 10.1016/J.Jcrysgro.2006.10.106 |
0.414 |
|
| 2007 |
Wang TC, Lu T, Ko TS, Kuo H, Chen HG, Yu M, Chuo CC, Lee ZH, Wang SC. Material and optical properties of Trenched Epitaxial Lateral Overgrowth of a‐plane GaN Physica Status Solidi (C). 4: 2519-2523. DOI: 10.1002/Pssc.200674765 |
0.369 |
|
| 2007 |
Yen HH, Yeh WY, Kuo H. GaN alternating current light‐emitting device Physica Status Solidi a-Applications and Materials Science. 204: 2077-2081. DOI: 10.1002/Pssa.200674766 |
0.387 |
|
| 2006 |
Yao HH, Lu TC, Huang GS, Chen CY, Liang WD, Kuo HC, Wang SC. InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption. Nanotechnology. 17: 1713-6. PMID 26558582 DOI: 10.1088/0957-4484/17/6/028 |
0.398 |
|
| 2006 |
Peng PC, Lin CT, Kuo HC, Tsai WK, Liu JN, Chi S, Wang SC, Lin G, Yang HP, Lin KF, Chi JY. Tunable slow light device using quantum dot semiconductor laser. Optics Express. 14: 12880-6. PMID 19532181 DOI: 10.1364/Oe.14.012880 |
0.469 |
|
| 2006 |
Lee Y, Lee C, Chiou S, Kuo H, Lu TC, Wang S. High Performances of 650 nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications The Japan Society of Applied Physics. 2006: 260-261. DOI: 10.7567/Ssdm.2006.B-3-5 |
0.382 |
|
| 2006 |
Lee YJ, Kuo H, Lu T, Su BJ, Wang SC. Fabrication and Characterization of GaN -Based LEDs Grown on Chemical Wet-Etched Patterned Sapphire Substrates Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2359701 |
0.496 |
|
| 2006 |
Yang HPD, Hsu IC, Lai FI, Kuo HC, Chi JY. High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L871 |
0.366 |
|
| 2006 |
Chen I, Hsu W, Lee T, Kuo H, Su K, Chiou C, Wang J, Chang Y. Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser Japanese Journal of Applied Physics. 45: L54-L56. DOI: 10.1143/Jjap.45.L54 |
0.442 |
|
| 2006 |
Yang HPD, Hsu IC, Lai FI, Lin G, Hsiao RS, Maleev NA, Blokhin SA, Kuo HC, Chi JY. Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 9078-9082. DOI: 10.1143/Jjap.45.9078 |
0.452 |
|
| 2006 |
Chen I, Hsu W, Kuo H, Sung C, Chiou C, Wang J, Chang Y, Yu H, Lee T. Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser Japanese Journal of Applied Physics. 45: 770-773. DOI: 10.1143/Jjap.45.770 |
0.476 |
|
| 2006 |
Lai F, Chen W, Kao C, Kuo H, Wang S. Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O Japanese Journal of Applied Physics. 45: 6927-6929. DOI: 10.1143/Jjap.45.6927 |
0.385 |
|
| 2006 |
Lee YJ, Lu T, Kuo H, Wang SC, Liou MJ, Chang CW, Hsu TC, Hsieh MH, Jou MJ, Lee BJ. AlGaInP Light-Emitting Diodes with Stripe Patterned Omni-Directional Reflector Japanese Journal of Applied Physics. 45: 643-645. DOI: 10.1143/Jjap.45.643 |
0.423 |
|
| 2006 |
Wang T, Kuo H, Lu T, Tsai C, Tsai M, Hsu J, Yang J. Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition Japanese Journal of Applied Physics. 45: 3560-3563. DOI: 10.1143/Jjap.45.3560 |
0.409 |
|
| 2006 |
Peng Y, Kao C, Huang H, Chu J, Lu T, Kuo H, Wang S, Yu C. Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors Japanese Journal of Applied Physics. 45: 3446-3448. DOI: 10.1143/Jjap.45.3446 |
0.495 |
|
| 2006 |
Huang H, Chu J, Kao C, Hsueh T, Lu T, Kuo H, Wang S, Yu C, Kuo S. Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces Japanese Journal of Applied Physics. 45: 3442-3445. DOI: 10.1143/Jjap.45.3442 |
0.462 |
|
| 2006 |
Chu J, Lu T, Yao H, Kao C, Liang W, Tsai J, Kuo H, Wang S. Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off Japanese Journal of Applied Physics. 45: 2556-2560. DOI: 10.1143/Jjap.45.2556 |
0.417 |
|
| 2006 |
Lin C, Tsai J, Kao C, Kuo H, Yu C, Lo J, Leung K. Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals Japanese Journal of Applied Physics. 45: 1591-1593. DOI: 10.1143/Jjap.45.1591 |
0.461 |
|
| 2006 |
Lin HS, Kao CC, Kuo H, Wang SC, Lin GR. Self-assembled Ni nanodot on SiO2 film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate Nanophotonics. 6195: 0-0. DOI: 10.1117/12.663339 |
0.342 |
|
| 2006 |
Huang HW, Chu JT, Hsueh TH, Ou-Yang MC, Kuo H, Wang SC. Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal Islands Journal of Vacuum Science & Technology B. 24: 1909-1912. DOI: 10.1116/1.2221317 |
0.407 |
|
| 2006 |
Lai FI, Kuo SY, Wang JS, Kuo H, Wang SC, Wang HS, Liang CT, Chen YF. Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells Journal of Vacuum Science and Technology. 24: 1223-1227. DOI: 10.1116/1.2208996 |
0.36 |
|
| 2006 |
Lai FI, Kuo SY, Chang YH, Huang HW, Chang CW, Yu CC, Lin CF, Kuo H, Wang SC. Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics Journal of Vacuum Science & Technology B. 24: 1123-1126. DOI: 10.1116/1.2188001 |
0.402 |
|
| 2006 |
Kuo S, Kei CC, Hsiao C, Chao CK, Lai F, Kuo H, Hsieh W, Wang S. Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy Ieee Transactions On Nanotechnology. 5: 273-277. DOI: 10.1109/Tnano.2006.874055 |
0.383 |
|
| 2006 |
Chang Y, Yu C, Wu I, Kuo H, Lu T, Lai F, Laih L, Laih L, Wang S. Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes Ieee Photonics Technology Letters. 18: 1690-1692. DOI: 10.1109/Lpt.2006.879931 |
0.481 |
|
| 2006 |
Liao Y, Lin G, Kuo H, Feng K, Feng M. 10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate Ieee Photonics Technology Letters. 18: 1822-1824. DOI: 10.1109/Lpt.2006.877623 |
0.333 |
|
| 2006 |
Peng P, Peng W, Feng K, Chiou H, Chen J, Kuo H, Wang S, Chi S. OCDMA light source using directly modulated Fabry-Pe/spl acute/rot laser diode in an external injection scheme Ieee Photonics Technology Letters. 18: 1103-1105. DOI: 10.1109/Lpt.2006.873347 |
0.375 |
|
| 2006 |
Lee Y, Kuo H, Lu T, Wang S. High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces Ieee Journal of Quantum Electronics. 42: 1196-1201. DOI: 10.1109/Jqe.2006.883468 |
0.447 |
|
| 2006 |
Chang Y, Chen J, Kuo H, Kuo Y, Wang S. Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers Journal of Lightwave Technology. 24: 536-543. DOI: 10.1109/Jlt.2005.860156 |
0.375 |
|
| 2006 |
Huang HW, Kuo HC, Chu JT, Lai CF, Kao CC, Lu TC, Wang SC, Tsai RJ, Yu CC, Lin CF. Nitride-based LEDs with nano-scale textured sidewalls using natural lithography Nanotechnology. 17: 2998-3001. DOI: 10.1088/0957-4484/17/12/030 |
0.465 |
|
| 2006 |
Lin CH, Kuo H, Lai CF, Huang HW, Leung KM, Yu CC, Lo JR. Light extraction enhancement of InGaN-based green LEDs with a composite omnidirectional reflector Semiconductor Science and Technology. 21: 1513-1517. DOI: 10.1088/0268-1242/21/12/001 |
0.474 |
|
| 2006 |
Chang Y, Ko T, Chen J, Lai F, Yu C, Wu I, Kuo H, Kuo Y, Laih L, Laih L, Lu T, Wang S. The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers Semiconductor Science and Technology. 21: 1488-1494. DOI: 10.1088/0268-1242/21/10/023 |
0.433 |
|
| 2006 |
Wang T, Lu T, Ko T, Kuo H, Yu M, Wang S, Chuo C, Lee Z, Chen H. Trenched epitaxial lateral overgrowth of fast coalesced a -plane GaN with low dislocation density Applied Physics Letters. 89: 251109. DOI: 10.1063/1.2405880 |
0.384 |
|
| 2006 |
Chang H, Lu TC, Kuo HC, Wang SC. Effect of oxygen on characteristics of nickel oxide∕indium tin oxide heterojunction diodes Journal of Applied Physics. 100: 124503. DOI: 10.1063/1.2404466 |
0.305 |
|
| 2006 |
Chu JT, Lu T, You M, Su BJ, Kao CC, Kuo H, Wang SC. Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers Applied Physics Letters. 89: 121112. DOI: 10.1063/1.2355476 |
0.377 |
|
| 2006 |
Peng PC, Lin CT, Kuo HC, Lin G, Tsai WK, Yang HP, Lin KF, Chi JY, Chi S, Wang SC. Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10GHz Electronics Letters. 42: 1036-1037. DOI: 10.1049/El:20061316 |
0.413 |
|
| 2006 |
Ko TS, Yang S, Hsu HC, Chu CP, Lin HF, Liao SC, Lu T, Kuo H, Hsieh WF, Wang SC. ZnO nanopowders fabricated by dc thermal plasma synthesis Materials Science and Engineering B-Advanced Functional Solid-State Materials. 134: 54-58. DOI: 10.1016/J.Mseb.2006.07.019 |
0.338 |
|
| 2006 |
Lai FI, Kuo SY, Wang JS, Hsiao RS, Kuo H, Chi J, Wang SC, Wang HS, Liang CT, Chen YF. Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55μm application grown by molecular beam epitaxy Journal of Crystal Growth. 291: 27-33. DOI: 10.1016/J.Jcrysgro.2006.02.028 |
0.412 |
|
| 2006 |
Wang TC, Kuo H, Lee ZH, Chuo CC, Tsai MY, Tsai CE, Lee TD, Lu T, Chi J. Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode Journal of Crystal Growth. 287: 582-585. DOI: 10.1016/J.Jcrysgro.2005.10.141 |
0.469 |
|
| 2006 |
Chang YA, Chu JT, Ko CT, Kuo H, Lin CF, Wang SC. MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser Journal of Crystal Growth. 287: 550-553. DOI: 10.1016/J.Jcrysgro.2005.10.030 |
0.441 |
|
| 2005 |
Huang H, Chu J, Kao C, Hsueh T, Kuo H, Wang S. Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface The Japan Society of Applied Physics. 2005: 718-719. DOI: 10.7567/Ssdm.2005.P7-6 |
0.457 |
|
| 2005 |
Wang T, Kuo H, Tsai C, Tsai M, Hsu J. Study of InGaN red emission multiple Quantum Dots The Japan Society of Applied Physics. 2005: 364-365. DOI: 10.7567/Ssdm.2005.F-3-3 |
0.355 |
|
| 2005 |
Cho AT, Shieh JM, Shieh J, Lai YF, Dai BT, Pan FM, Kuo HC, Lin YC, Chao KJ, Liu PH. Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals Electrochemical and Solid-State Letters. 8. DOI: 10.1149/1.1897351 |
0.429 |
|
| 2005 |
Chang Y, Lai F, Yu H, Kuo H, Laih L, Yu C, Wang S. High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer Japanese Journal of Applied Physics. 44: 901-902. DOI: 10.1143/Jjap.44.L901 |
0.336 |
|
| 2005 |
Chu J, Kao C, Huang H, Liang W, Chu C, Lu T, Kuo H, Wang S. Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off Japanese Journal of Applied Physics. 44: 7910-7912. DOI: 10.1143/Jjap.44.7910 |
0.397 |
|
| 2005 |
Hsueh TH, Sheu JK, Huang HW, Chang YH, Ou-Yang MC, Kuo H, Wang SC. Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods Japanese Journal of Applied Physics. 44: 7723-7725. DOI: 10.1143/Jjap.44.7723 |
0.443 |
|
| 2005 |
Chen I, Hsu W, Kuo H, Yu H, Sung C, Lu C, Chiou C, Wang J, Chang Y, Lee T, Wang J. Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 44: 7485-7487. DOI: 10.1143/Jjap.44.7485 |
0.436 |
|
| 2005 |
Lai FI, Kuo HC, Chang YH, Tsai MY, Chu CP, Kuo SY, Wang SC, Tansu N, Yeh JY, Mawst LJ. Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 6204-6207. DOI: 10.1143/Jjap.44.6204 |
0.415 |
|
| 2005 |
Hsueh T, Huang H, Kao C, Chang Y, Ou-Yang M, Kuo H, Wang S. Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks Japanese Journal of Applied Physics. 44: 2661-2663. DOI: 10.1143/Jjap.44.2661 |
0.444 |
|
| 2005 |
Chang Y, Hsueh T, Lai F, Chang C, Yu C, Huang H, Lin C, Kuo H, Wang S. Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods Japanese Journal of Applied Physics. 44: 2657-2660. DOI: 10.1143/Jjap.44.2657 |
0.396 |
|
| 2005 |
Chang Y, Kuo H, Chang Y, Chu J, Tsai M, Wang S. 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 µm Emission Wavelengths Japanese Journal of Applied Physics. 44: 2556-2559. DOI: 10.1143/Jjap.44.2556 |
0.41 |
|
| 2005 |
Chu J, Huang H, Kao C, Liang W, Lai F, Chu C, Kuo H, Wang S. Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate Japanese Journal of Applied Physics. 44: 2509-2511. DOI: 10.1143/Jjap.44.2509 |
0.461 |
|
| 2005 |
Kuo H, Chang YH, Chang YA, Tseng KF, Laih LH, Wang SC, Yu H, Sung C, Yang HD. Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication Proceedings of Spie. 5624: 50-57. DOI: 10.1117/12.577050 |
0.394 |
|
| 2005 |
Lin C, Kuo H, Liao Y, Lin G. Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer Proceedings of Spie. 5624: 399-406. DOI: 10.1117/12.577048 |
0.364 |
|
| 2005 |
Kao C, Kuo H, Huang H, Chu J, Peng Y, Hsieh Y-, Luo CY, Wang S, Yu C, Lin C. Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls Ieee Photonics Technology Letters. 17: 19-21. DOI: 10.1109/Lpt.2004.837480 |
0.474 |
|
| 2005 |
Kuo H, Chang Y, Chang Y, Lai F-, Chu J, Tsai M, Wang S. Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers Ieee Journal of Selected Topics in Quantum Electronics. 11: 121-126. DOI: 10.1109/Jstqe.2004.841696 |
0.379 |
|
| 2005 |
Lin G, Kuo H, Lin C, Feng M. Ultralow leakage In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate Ieee Journal of Quantum Electronics. 41: 749-752. DOI: 10.1109/Jqe.2005.847570 |
0.303 |
|
| 2005 |
Hsueh TH, Huang HW, Lai FI, Sheu JK, Chang YH, Kuo H, Wang SC. Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods Nanotechnology. 16: 448-450. DOI: 10.1088/0957-4484/16/4/020 |
0.455 |
|
| 2005 |
Chang YA, Kuo H, Lu CY, Kuo YK, Wang SC. Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers Semiconductor Science and Technology. 20: 601-605. DOI: 10.1088/0268-1242/20/6/020 |
0.349 |
|
| Show low-probability matches. |