Year |
Citation |
Score |
2019 |
Jadwiszczak J, Keane D, Maguire P, Cullen CP, Zhou Y, Song H, Downing C, Fox D, McEvoy N, Zhu R, Xu J, Duesberg GS, Liao ZM, Boland JJ, Zhang H. MoS Memtransistors Fabricated by Localized Helium Ion Beam Irradiation. Acs Nano. PMID 31790198 DOI: 10.1021/Acsnano.9B07421 |
0.637 |
|
2019 |
Maguire P, Jadwiszczak J, O’Brien M, Keane D, Duesberg GS, McEvoy N, Zhang H. Defect-moderated oxidative etching of MoS2 Journal of Applied Physics. 126: 164301. DOI: 10.1063/1.5115036 |
0.687 |
|
2019 |
Maguire P, Downing C, Jadwiszczak J, O’Brien M, Keane D, McManus JB, Duesberg GS, Nicolosi V, McEvoy N, Zhang H. Suppression of the shear Raman mode in defective bilayer MoS 2 Journal of Applied Physics. 125: 064305. DOI: 10.1063/1.5086366 |
0.673 |
|
2018 |
Jadwiszczak J, O'Callaghan C, Zhou Y, Fox DS, Weitz E, Keane D, Cullen CP, O'Reilly I, Downing C, Shmeliov A, Maguire P, Gough JJ, McGuinness C, Ferreira MS, Bradley AL, et al. Oxide-mediated recovery of field-effect mobility in plasma-treated MoS. Science Advances. 4: eaao5031. PMID 29511736 DOI: 10.1126/Sciadv.Aao5031 |
0.621 |
|
2017 |
Zhou Y, Jadwiszczak J, Keane D, Chen Y, Yu D, Zhang H. Programmable graphene doping via electron beam irradiation. Nanoscale. PMID 28613304 DOI: 10.1039/C7Nr03446F |
0.693 |
|
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