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Sriram Krishnamoorthy - Publications

Affiliations: 
Ohio State University, Columbus, Columbus, OH 
Area:
Wide Band Gap Semiconductor Devices
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64 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Song Y, Bhattacharyya A, Karim A, Shoemaker D, Huang HL, Roy S, McGray C, Leach JH, Hwang J, Krishnamoorthy S, Choi S. Ultra-Wide Band Gap GaO-on-SiC MOSFETs. Acs Applied Materials & Interfaces. PMID 36700621 DOI: 10.1021/acsami.2c21048  0.305
2022 Rajapitamahuni AK, Manjeshwar AK, Kumar A, Datta A, Ranga P, Thoutam LR, Krishnamoorthy S, Singisetti U, Jalan B. Plasmon-Phonon Coupling in Electrostatically Gated β-GaO Films with Mobility Exceeding 200 cm V s. Acs Nano. PMID 35436095 DOI: 10.1021/acsnano.1c09535  0.309
2021 Song Y, Shoemaker D, Leach JH, McGray C, Huang HL, Bhattacharyya A, Zhang Y, Gonzalez-Valle CU, Hess T, Zhukovsky S, Ferri K, Lavelle RM, Perez C, Snyder DW, Maria JP, ... ... Krishnamoorthy S, et al. GaO-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics. Acs Applied Materials & Interfaces. 13: 40817-40829. PMID 34470105 DOI: 10.1021/acsami.1c09736  0.329
2020 Ranga P, Cho SB, Mishra R, Krishnamoorthy S. Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures Applied Physics Express. 13: 061009. DOI: 10.35848/1882-0786/Ab9168  0.392
2020 Ranga P, Bhattacharyya A, Rishinaramangalam A, Ooi YK, Scarpulla MA, Feezell D, Krishnamoorthy S. Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 13: 045501. DOI: 10.35848/1882-0786/Ab7712  0.388
2020 Bhattacharyya A, Ranga P, Saleh M, Roy S, Scarpulla MA, Lynn KG, Krishnamoorthy S. Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric Ieee Journal of the Electron Devices Society. 8: 286-294. DOI: 10.1109/Jeds.2020.2974260  0.411
2020 Saleh M, Varley JB, Jesenovec J, Bhattacharyya A, Krishnamoorthy S, Swain S, Lynn K. Degenerate doping in β-Ga2O3 single crystals through Hf-doping Semiconductor Science and Technology. 35: 04LT01. DOI: 10.1088/1361-6641/Ab75A6  0.386
2020 Lyman JE, Krishnamoorthy S. Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures Journal of Applied Physics. 127: 173102. DOI: 10.1063/5.0001917  0.342
2019 Ranga P, Rishinaramangalam A, Varley J, Bhattacharyya A, Feezell D, Krishnamoorthy S. Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 12: 111004. DOI: 10.7567/1882-0786/Ab47B8  0.392
2019 Saleh M, Bhattacharyya A, Varley JB, Swain S, Jesenovec J, Krishnamoorthy S, Lynn K. Electrical and optical properties of Zr doped β-Ga2O3 single crystals Applied Physics Express. 12: 085502. DOI: 10.7567/1882-0786/Ab2B6C  0.402
2019 Gopalan P, Chanana A, Krishnamoorthy S, Nahata A, Scarpulla MA, Sensale-Rodriguez B. Ultrafast THz modulators with WSe2 thin films [Invited] Optical Materials Express. 9: 826. DOI: 10.1364/Ome.9.000826  0.348
2019 Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149  0.681
2018 Wang Y, Dickens PT, Varley JB, Ni X, Lotubai E, Sprawls S, Liu F, Lordi V, Krishnamoorthy S, Blair S, Lynn KG, Scarpulla M, Sensale-Rodriguez B. Incident wavelength and polarization dependence of spectral shifts in β-GaO UV photoluminescence. Scientific Reports. 8: 18075. PMID 30584263 DOI: 10.1038/S41598-018-36676-7  0.329
2018 Pratiyush AS, Krishnamoorthy S, Kumar S, Xia Z, Muralidharan R, Rajan S, Nath DN. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector Japanese Journal of Applied Physics. 57: 60313. DOI: 10.7567/Jjap.57.060313  0.711
2018 Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101  0.71
2018 Xia Z, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y, Brenner M, Lodha S, Rajan S. Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Ieee Electron Device Letters. 39: 568-571. DOI: 10.1109/Led.2018.2805785  0.721
2018 Gao H, Muralidharan S, Pronin N, Karim MR, White SM, Asel T, Foster G, Krishnamoorthy S, Rajan S, Cao LR, Higashiwaki M, von Wenckstern H, Grundmann M, Zhao H, Look DC, et al. Optical signatures of deep level defects in Ga2O3 Applied Physics Letters. 112: 242102. DOI: 10.1063/1.5026770  0.534
2017 Akyol F, Zhang Y, Krishnamoorthy S, Rajan S. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content Applied Physics Express. 10: 121003. DOI: 10.7567/Apex.10.121003  0.664
2017 Krishnamoorthy S, Xia Z, Bajaj S, Brenner M, Rajan S. Delta-doped β-gallium oxide field-effect transistor Applied Physics Express. 10: 51102. DOI: 10.7567/Apex.10.051102  0.726
2017 Lee CH, Lee EW, McCulloch W, Jamal-Eddine Z, Krishnamoorthy S, Newburger MJ, Kawakami RK, Wu Y, Rajan S. A self-limiting layer-by-layer etching technique for 2H-MoS2 Applied Physics Express. 10: 35201. DOI: 10.7567/Apex.10.035201  0.544
2017 Bajaj S, Yang Z, Akyol F, Park PS, Zhang Y, Price AL, Krishnamoorthy S, Meyer DJ, Rajan S. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity Ieee Transactions On Electron Devices. 64: 3114-3119. DOI: 10.1109/Ted.2017.2713784  0.563
2017 Zhang Y, Krishnamoorthy S, Akyol F, Johnson JM, Allerman AA, Moseley MW, Armstrong AM, Hwang J, Rajan S. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Applied Physics Letters. 111: 051104. DOI: 10.1063/1.4997328  0.623
2017 Lee CH, Krishnamoorthy S, Paul PK, O'Hara DJ, Brenner MR, Kawakami RK, Arehart AR, Rajan S. Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 111: 202101. DOI: 10.1063/1.4994582  0.613
2017 Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569  0.71
2017 Pratiyush AS, Krishnamoorthy S, Solanke SV, Xia Z, Muralidharan R, Rajan S, Nath DN. High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters. 110: 221107. DOI: 10.1063/1.4984904  0.701
2017 Zhang Y, Krishnamoorthy S, Akyol F, Bajaj S, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Tunnel-injected sub-260 nm ultraviolet light emitting diodes Applied Physics Letters. 110: 201102. DOI: 10.1063/1.4983352  0.64
2017 Lee CH, Krishnamoorthy S, O'Hara DJ, Brenner MR, Johnson JM, Jamison JS, Myers RC, Kawakami RK, Hwang J, Rajan S. Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates Journal of Applied Physics. 121: 094302. DOI: 10.1063/1.4977697  0.586
2017 Johnson JM, Hee Lee C, Krishnamoorthy S, Rajan S, Hwang J. Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface Microscopy and Microanalysis. 23: 1728-1729. DOI: 10.1017/S1431927617009308  0.51
2017 Johnson JM, Krishnamoorthy S, Rajan S, Hwang J. Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces Microscopy and Microanalysis. 23: 1454-1455. DOI: 10.1017/S1431927617007930  0.543
2016 Zhang Y, Allerman AA, Krishnamoorthy S, Akyol F, Moseley MW, Armstrong AM, Rajan S. Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs Applied Physics Express. 9. DOI: 10.7567/Apex.9.052102  0.582
2016 Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Applied Physics Letters. 109: 191105. DOI: 10.1063/1.4967698  0.617
2016 Krishnamoorthy S, Lee EW, Lee CH, Zhang Y, McCulloch WD, Johnson JM, Hwang J, Wu Y, Rajan S. High current density 2D/3D MoS2/GaN Esaki tunnel diodes Applied Physics Letters. 109: 183505. DOI: 10.1063/1.4966283  0.646
2016 Bajaj S, Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. AlGaN channel field effect transistors with graded heterostructure ohmic contacts Applied Physics Letters. 109: 133508. DOI: 10.1063/1.4963860  0.629
2016 Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Applied Physics Letters. 109: 121102. DOI: 10.1063/1.4962900  0.65
2016 Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)] Applied Physics Letters. 109: 109901. DOI: 10.1063/1.4961678  0.578
2016 Yang Z, Zhang Y, Krishnamoorthy S, Nath DN, Khurgin JB, Rajan S. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter Applied Physics Letters. 108: 192101. DOI: 10.1063/1.4949489  0.614
2016 Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance Applied Physics Letters. 108. DOI: 10.1063/1.4944998  0.63
2015 Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions Applied Physics Express. 8. DOI: 10.7567/Apex.8.082103  0.636
2015 Park PS, Krishnamoorthy S, Bajaj S, Nath DN, Rajan S. Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs Ieee Electron Device Letters. 36: 226-228. DOI: 10.1109/Led.2015.2394503  0.609
2015 Lee CH, McCulloch W, Lee EW, Ma L, Krishnamoorthy S, Hwang J, Wu Y, Rajan S. Transferred large area single crystal MoS2 field effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4934941  0.57
2015 Bajaj S, Shoron OF, Park PS, Krishnamoorthy S, Akyol F, Hung TH, Reza S, Chumbes EM, Khurgin J, Rajan S. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors Applied Physics Letters. 107. DOI: 10.1063/1.4933181  0.595
2015 Lee EW, Lee CH, Paul PK, Ma L, McCulloch WD, Krishnamoorthy S, Wu Y, Arehart AR, Rajan S. Layer-transferred MoS2/GaN PN diodes Applied Physics Letters. 107. DOI: 10.1063/1.4930234  0.632
2015 Zhang Y, Krishnamoorthy S, Johnson JM, Akyol F, Allerman A, Moseley MW, Armstrong A, Hwang J, Rajan S. Interband tunneling for hole injection in III-nitride ultraviolet emitters Applied Physics Letters. 106. DOI: 10.1063/1.4917529  0.67
2015 Gür E, Akyol F, Krishnamoorthy S, Rajan S, Ringel SA. Deep level defects in N-rich and In-rich InxGa1-XN: In composition dependence Superlattices and Microstructures. DOI: 10.1016/J.Spmi.2016.05.009  0.584
2014 Krishnamoorthy S, Akyol F, Rajan S. III-nitride tunnel junctions for efficient solid state lighting Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2039382  0.619
2014 Hung TH, Park PS, Krishnamoorthy S, Nath DN, Rajan S. Interface charge engineering for enhancement-mode GaN MISHEMTs Ieee Electron Device Letters. 35: 312-314. DOI: 10.1109/Led.2013.2296659  0.591
2014 Krishnamoorthy S, Akyol F, Rajan S. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4897342  0.653
2014 Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4883890  0.614
2013 Krishnamoorthy S, Kent TF, Yang J, Park PS, Myers RC, Rajan S. GdN nanoisland-based GaN tunnel junctions. Nano Letters. 13: 2570-5. PMID 23662669 DOI: 10.1021/Nl4006723  0.653
2013 Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4834698  0.6
2013 Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. A study of electrically active traps in AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826922  0.61
2013 Akyol F, Krishnamoorthy S, Rajan S. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop Applied Physics Letters. 103. DOI: 10.1063/1.4819737  0.636
2013 Laskar MR, Ma L, Kannappan S, Sung Park P, Krishnamoorthy S, Nath DN, Lu W, Wu Y, Rajan S. Large area single crystal (0001) oriented MoS2 Applied Physics Letters. 102. DOI: 10.1063/1.4811410  0.568
2013 Krishnamoorthy S, Akyol F, Park PS, Rajan S. Low resistance GaN/InGaN/GaN tunnel junctions Applied Physics Letters. 102. DOI: 10.1063/1.4796041  0.654
2013 Hung TH, Krishnamoorthy S, Esposto M, Neelim Nath D, Sung Park P, Rajan S. Interface charge engineering at atomic layer deposited dielectric/III- nitride interfaces Applied Physics Letters. 102. DOI: 10.1063/1.4793483  0.595
2012 Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications Smart Materials and Structures. 21. DOI: 10.1088/0964-1726/21/9/094003  0.582
2012 Akyol F, Nath DN, Krishnamoorthy S, Park PS, Rajan S. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.3694967  0.61
2012 Park PS, Nath DN, Krishnamoorthy S, Rajan S. Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization Applied Physics Letters. 100: 63507. DOI: 10.1063/1.3685483  0.6
2012 Lecce VD, Krishnamoorthy S, Esposto M, Hung T-, Chini A, Rajan S. Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al 2 O 3 -on-GaN MOS diodes Electronics Letters. 48: 347-348. DOI: 10.1049/El.2011.4046  0.564
2011 Krishnamoorthy S, Park PS, Rajan S. Demonstration of forward inter-band tunneling in GaN by polarization engineering Applied Physics Letters. 99. DOI: 10.1063/1.3666862  0.638
2011 Gür E, Zhang Z, Krishnamoorthy S, Rajan S, Ringel SA. Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)] Applied Physics Letters. 99: 229906. DOI: 10.1063/1.3666222  0.512
2011 Esposto M, Krishnamoorthy S, Nath DN, Bajaj S, Hung T, Rajan S. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride Applied Physics Letters. 99: 133503. DOI: 10.1063/1.3645616  0.624
2010 Ramesh P, Krishnamoorthy S, Park PS, Rajan S, Washington GN. Distributed intelligence using gallium nitride based active devices Proceedings of Spie - the International Society For Optical Engineering. 7643. DOI: 10.1117/12.847919  0.61
2010 Krishnamoorthy S, Nath DN, Akyol F, Park PS, Esposto M, Rajan S. Polarization-engineered GaN/InGaN/GaN tunnel diodes Applied Physics Letters. 97. DOI: 10.1063/1.3517481  0.66
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