Year |
Citation |
Score |
2020 |
Wang W, Kim S, Liu M, Cevallos FA, Cava RJ, Ong NP. Evidence for an edge supercurrent in the Weyl superconductor MoTe. Science (New York, N.Y.). 368: 534-537. PMID 32355033 DOI: 10.1126/Science.Aaw9270 |
0.542 |
|
2018 |
Liang T, Lin J, Gibson Q, Kushwaha S, Liu M, Wang W, Xiong H, Sobota JA, Hashimoto M, Kirchmann PS, Shen Z, Cava RJ, Ong NP. Anomalous Hall effect in ZrTe5 Nature Physics. 14: 451-455. DOI: 10.1038/S41567-018-0078-Z |
0.661 |
|
2017 |
Liang T, Lin J, Gibson Q, Gao T, Hirschberger M, Liu M, Cava RJ, Ong NP. Anomalous Nernst Effect in the Dirac Semimetal Cd_{3}As_{2}. Physical Review Letters. 118: 136601. PMID 28409962 DOI: 10.1103/Physrevlett.118.136601 |
0.678 |
|
2016 |
Liu M, Wang W, Richardella AR, Kandala A, Li J, Yazdani A, Samarth N, Ong NP. Large discrete jumps observed in the transition between Chern states in a ferromagnetic topological insulator. Science Advances. 2: e1600167. PMID 27482539 DOI: 10.1126/Sciadv.1600167 |
0.617 |
|
2016 |
Xie W, Liu M, Wang Z, Ong NP, Cava RJ. Composite Icosahedron/Cube Endohedral Clusters in Rh2Cd15. Inorganic Chemistry. 55: 7605-9. PMID 27442710 DOI: 10.1021/Acs.Inorgchem.6B01000 |
0.496 |
|
2016 |
Chang CZ, Liu MH, Zhang ZC, Wang YY, He K, Xue QK. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films Science China: Physics, Mechanics and Astronomy. 59: 1-5. DOI: 10.1007/S11433-015-5761-9 |
0.648 |
|
2015 |
Liang T, Gibson Q, Ali MN, Liu M, Cava RJ, Ong NP. Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2. Nature Materials. 14: 280-4. PMID 25419815 DOI: 10.1038/Nmat4143 |
0.697 |
|
2013 |
Chang CZ, Zhang J, Liu M, Zhang Z, Feng X, Li K, Wang LL, Chen X, Dai X, Fang Z, Qi XL, Zhang SC, Wang Y, He K, Ma XC, et al. Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order. Advanced Materials (Deerfield Beach, Fla.). 25: 1065-70. PMID 23334936 DOI: 10.1002/Adma.201203493 |
0.649 |
|
2013 |
Zhao W, Wang Q, Liu M, Zhang W, Wang Y, Chen M, Guo Y, He K, Chen X, Wang Y, Wang J, Xie X, Niu Q, Wang L, Ma X, et al. Evidence for Berezinskii–Kosterlitz–Thouless transition in atomically flat two-dimensional Pb superconducting films Solid State Communications. 165: 59-63. DOI: 10.1016/J.Ssc.2013.04.025 |
0.587 |
|
2012 |
Liu M, Zhang J, Chang CZ, Zhang Z, Feng X, Li K, He K, Wang LL, Chen X, Dai X, Fang Z, Xue QK, Ma X, Wang Y. Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Physical Review Letters. 108: 036805. PMID 22400773 DOI: 10.1103/Physrevlett.108.036805 |
0.654 |
|
2012 |
Liu M, Wang Y. Electron interaction and localization in ultrathin topological insulator films Science China Physics, Mechanics and Astronomy. 55: 2213-2225. DOI: 10.1007/S11433-012-4941-0 |
0.65 |
|
2011 |
Zhang J, Chang CZ, Zhang Z, Wen J, Feng X, Li K, Liu M, He K, Wang L, Chen X, Xue QK, Ma X, Wang Y. Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators. Nature Communications. 2: 574. PMID 22146393 DOI: 10.1038/Ncomms1588 |
0.559 |
|
2011 |
Zhang C, Fu L, Liu N, Liu M, Wang Y, Liu Z. Synthesis of nitrogen-doped graphene using embedded carbon and nitrogen sources. Advanced Materials (Deerfield Beach, Fla.). 23: 1020-4. PMID 21341318 DOI: 10.1002/Adma.201004110 |
0.473 |
|
2011 |
CHANG C, HE K, WANG L, MA X, LIU M, ZHANG Z, CHEN X, WANG Y, XUE Q. GROWTH OF QUANTUM WELL FILMS OF TOPOLOGICAL INSULATOR Bi2Se3 ON INSULATING SUBSTRATE Spin. 1: 21-25. DOI: 10.1142/S2010324711000033 |
0.608 |
|
2011 |
Liu M, Chang CZ, Zhang Z, Zhang Y, Ruan W, He K, Wang LL, Chen X, Jia JF, Zhang SC, Xue QK, Ma X, Wang Y. Electron interaction-driven insulating ground state in Bi 2Se3 topological insulators in the two-dimensional limit Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.165440 |
0.645 |
|
2010 |
Li YY, Wang G, Zhu XG, Liu MH, Ye C, Chen X, Wang YY, He K, Wang LL, Ma XC, Zhang HJ, Dai X, Fang Z, Xie XC, Liu Y, et al. Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit. Advanced Materials (Deerfield Beach, Fla.). 22: 4002-7. PMID 20648518 DOI: 10.1002/Adma.201000368 |
0.564 |
|
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