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Paul R Berger, Ph.D. - Publications

Affiliations: 
2000-2020 Department of Electrical & Computer Engineering Ohio State University, Columbus, Columbus, OH 
 2014-2020 Department of Electronics and Communications Engineering Tampere University 
Area:
semiconductor, electrical engineering, quantum tunneling
Website:
http://www2.ece.ohio-state.edu/~berger/

108 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Zhang W, Growden TA, Storm DF, Meyer DJ, Berger PR, Brown ER. Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models Ieee Transactions On Electron Devices. 67: 75-79. DOI: 10.1109/TED.2019.2955360  0.01
2020 Growden TA, Storm DF, Cornuelle EM, Brown ER, Zhang W, Downey BP, Roussos JA, Cronk N, Ruppalt LB, Champlain JG, Berger PR, Meyer DJ. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501. DOI: 10.1063/1.5139219  0.01
2019 Bhalerao SR, Lupo D, Zangiabadi A, Kymissis I, Leppaniemi J, Alastalo A, Berger PR. 0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High-$\kappa$ Al2O3 Dielectric Ieee Electron Device Letters. 40: 1112-1115. DOI: 10.1109/LED.2019.2918492  0.01
2019 Growden TA, Cornuelle EM, Storm DF, Zhang W, Brown ER, Whitaker LM, Daulton JW, Molnar R, Meyer DJ, Berger PR. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters. 114: 203503. DOI: 10.1063/1.5095056  0.01
2018 Growden TA, Zhang W, Brown ER, Storm DF, Meyer DJ, Berger PR. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures. Light, Science & Applications. 7: 17150. PMID 30839526 DOI: 10.1038/lsa.2017.150  0.64
2018 Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. M2M Communication Assessment in Energy-Harvesting and Wake-Up Radio Assisted Scenarios Using Practical Components. Sensors (Basel, Switzerland). 18. PMID 30453515 DOI: 10.3390/s18113992  0.12
2018 Ishimaru K, Horiguchi N, Nojiri K, Zhang PL, Berger PR. Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018 Ieee Journal of the Electron Devices Society. 6: 1197-1199. DOI: 10.1109/jeds.2018.2884554  0.01
2018 Berger PR, Kim M. Polymer solar cells: P3HT:PCBM and beyond Journal of Renewable and Sustainable Energy. 10: 013508. DOI: 10.1063/1.5012992  0.01
2018 Growden TA, Zhang W, Brown ER, Storm DF, Hansen K, Fakhimi P, Meyer DJ, Berger PR. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes Applied Physics Letters. 112: 033508. DOI: 10.1063/1.5010794  0.01
2017 Storm DF, Growden TA, Zhang W, Brown ER, Nepal N, Katzer DS, Hardy MT, Berger PR, Meyer DJ. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110. DOI: 10.1116/1.4977779  0.01
2017 Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. Viability Bounds of M2M Communication Using Energy-Harvesting and Passive Wake-Up Radio Ieee Access. 5: 27868-27878. DOI: 10.1109/ACCESS.2017.2713878  0.01
2017 Kraft TM, Berger PR, Lupo D. Printed and organic diodes: devices, circuits and applications Flexible and Printed Electronics. 2: 033001. DOI: 10.1088/2058-8585/AA8AC3  0.01
2017 Guttman JJ, Chambers CB, Villagracia AR, Santos GNC, Berger PR. Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures Organic Electronics. 47: 228-234. DOI: 10.1016/J.ORGEL.2017.05.015  0.01
2017 Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications International Journal of Wireless Information Networks. 24: 291-299. DOI: 10.1007/s10776-017-0358-z  0.01
2016 Suleimanov SK, Berger P, Dyskin VG, Dzhanklych MU, Bugakov AG, Dudko OA, Kulagina NA, Kim M. Antireflection coatings based on fluoride formulations for organic solar cells Technical Physics Letters. 42: 359-361. DOI: 10.1134/S1063785016040155  0.01
2016 Zhang W, Brown ER, Growden TA, Berger PR, Droopad R. A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes Ieee Transactions On Electron Devices. 63: 4993-4997. DOI: 10.1109/TED.2016.2617681  0.01
2016 Berger PR, Chin A, Nishiyama A, Ieong M. Foreword Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices Ieee Journal of the Electron Devices Society. 4: 203-204. DOI: 10.1109/JEDS.2016.2597518  0.01
2016 Growden TA, Storm DF, Zhang W, Brown ER, Meyer DJ, Fakhimi P, Berger PR. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy Applied Physics Letters. 109. DOI: 10.1063/1.4961442  1
2015 Growden TA, Brown ER, Zhang W, Droopad R, Berger PR. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time Applied Physics Letters. 107. DOI: 10.1063/1.4933258  1
2015 Ravi A, Luthra A, Teixeira FL, Berger PR, Coe JV. Tuning the Plasmonic Extinction Resonances of Hexagonal Arrays of Ag Nanoparticles Plasmonics. DOI: 10.1007/s11468-015-9963-9  1
2014 Jung K, Yoon W, Park YB, Berger PR, Teixeira FL. Broadband Finite-Difference Time-Domain Modeling of Plasmonic Organic Photovoltaics Etri Journal. 36: 654-661. DOI: 10.4218/ETRIJ.14.0113.0767  0.08
2014 Heljo P, Wolff K, Lahtonen K, Valden M, Berger P, Majumdar H, Lupo D. Anodic Oxidation of Ultra-Thin Ti Layers on ITO Substrates and their Application in Organic Electronic Memory Elements Electrochimica Acta. 137: 91-98. DOI: 10.1016/J.ELECTACTA.2014.05.157  0.01
2013 Ramesh A, Gupta S, Berger P, Theiss A, Ren F, Lee S, Casal P. Towards in vivo biosensors for low-cost protein sensing Electronics Letters. 49: 450-451. DOI: 10.1049/EL.2012.4283  0.01
2012 Ramesh A, Growden TA, Berger PR, Loo R, Vandervorst W, Douhard B, Caymax M. Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 59: 602-609. DOI: 10.1109/TED.2011.2180532  0.01
2012 Morrison JT, Storm M, Chowdhury E, Akli KU, Feldman S, Willis C, Daskalova RL, Growden T, Berger P, Ditmire T, Van Woerkom L, Freeman RR. Selective deuteron production using target normal sheath acceleration Physics of Plasmas. 19. DOI: 10.1063/1.3695061  1
2012 Ramesh A, Berger PR, Loo R. High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition Applied Physics Letters. 100: 092104. DOI: 10.1063/1.3684834  0.01
2011 Ramesh A, Park S, Berger PR. 90 nm 32 $\times$ 32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation Ieee Transactions On Circuits and Systems I: Regular Papers. 58: 2432-2445. DOI: 10.1109/TCSI.2011.2123630  0.01
2010 Park S, Di Giacomo SJ, Anisha R, Berger PR, Thompson PE, Adesida I. Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 763-768. DOI: 10.1116/1.3455498  0.01
2010 Gupta SK, Wu H, Kwak KJ, Casal P, Nicholson III TR, Wen X, Anisha R, Bhushan B, Berger PR, Lu W, Brillson LJ, Lee SC. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces Journal of Physics D: Applied Physics. 44: 034010. DOI: 10.1088/0022-3727/44/3/034010  0.04
2010 Yoon W, Jung K, Liu J, Duraisamy T, Revur R, Teixeira FL, Sengupta S, Berger PR. Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles Solar Energy Materials and Solar Cells. 94: 128-132. DOI: 10.1016/J.SOLMAT.2009.08.006  0.01
2010 Yoon WJ, Berger PR. Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 11: 1719-1722. DOI: 10.1016/j.orgel.2010.07.026  1
2010 Yoon WJ, Bhattacharyya D, Timmons RB, Berger PR. Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 11: 1767-1771. DOI: 10.1016/j.orgel.2010.07.022  1
2009 Yu R, Anisha R, Jin N, Chung S, Berger PR, Gramila TJ, Thompson PE. Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy Journal of Applied Physics. 106: 034501. DOI: 10.1063/1.3187832  0.04
2008 Yoon WJ, Orlove SB, Olmon RL, Berger PR. Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDs Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2961823  1
2008 Yoon WJ, Berger PR. Surface modification to the indium tin oxide (ITO) anodes through plasma oxidized silver for efficient P3HT:PCBM (1:0.8) bulk heterojunction photovoltaic devices Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922490  1
2008 Anisha R, Jin N, Chung S, Yu R, Berger PR, Thompson PE. Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates Applied Physics Letters. 93: 102113. DOI: 10.1063/1.2981211  0.01
2008 Yoon WJ, Berger PR. 4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modification Applied Physics Letters. 92. DOI: 10.1063/1.2830619  1
2008 Bhattacharyya D, Yoon WJ, Berger PR, Timmons RB. Plasma-polymerized multistacked organic bipolar films: A new approach to flexible high-k dielectrics Advanced Materials. 20: 2383-2388. DOI: 10.1002/adma.200702981  1
2007 Park S, Yu R, Chung S, Berger P, Thompson P, Fay P. Sensitivity of Si-based zero-bias backward diodes for microwave detection Electronics Letters. 43: 295. DOI: 10.1049/EL:20070299  0.01
2006 Xu Y, Berger PR, Cho J, Timmons RB. Pulsed plasma polymerized dichlorotetramethyldisiloxane high- k gate dielectrics for polymer field-effect transistors Journal of Applied Physics. 99. DOI: 10.1063/1.2150248  1
2006 Park S, Chung S, Berger P, Yu R, Thompson P. Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si∕SiGe resonant interband tunnel diodes Electronics Letters. 42: 719. DOI: 10.1049/EL:20060323  0.01
2006 Chung S, Park S, Daulton JW, Yu R, Berger PR, Thompson PE. Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications Solid-State Electronics. 50: 973-978. DOI: 10.1016/J.SSE.2006.04.044  0.01
2005 Yoon WJ, Chung SY, Berger PR, Asar SM. Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2130395  1
2005 Jin N, Chung S, Yu R, Berger P, Thompson P. Temperature dependent DC∕RF performance of Si∕SiGe resonant interband tunnelling diodes Electronics Letters. 41: 559. DOI: 10.1049/EL:20050020  0.01
2004 Xu Y, Berger PR, Wilson JN, Bunz UH. Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE Mrs Proceedings. 814. DOI: 10.1557/PROC-814-I13.7  0.04
2004 Xu Y, Berger PR, Wilson JN, Bunz UHF. Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection Applied Physics Letters. 85: 4219-4221. DOI: 10.1063/1.1812834  0.04
2004 Chung S, Jin N, Pavlovicz RE, Berger PR, Yu R, Fang Z, Thompson PE. Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy Journal of Applied Physics. 96: 747-753. DOI: 10.1063/1.1755436  0.01
2004 Weaver BD, Thompson PE, Jin N, Chung SY, Rice AT, Berger PR. Radiation tolerance of Si/Si 0.6Ge 0.4 resonant interband tunneling diodes Journal of Applied Physics. 95: 6406-6408. DOI: 10.1063/1.1710719  1
2004 Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109  1
2004 Xu Y, Berger PR. High electric-field effects on short-channel polythiophene polymer field-effect transistors Journal of Applied Physics. 95: 1497-1501. DOI: 10.1063/1.1636830  0.01
2004 Jin N, Chung S, Yu R, Berger P, Thompson P. Improved vertically stacked Si∕SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents Electronics Letters. 40: 1548. DOI: 10.1049/EL:20046078  0.01
2004 Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Solid-State Electronics. 48: 1907-1910. DOI: 10.1016/j.sse.2004.05.034  1
2004 Xu Y, Berger PR, Cho J, Timmons RB. Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors Journal of Electronic Materials. 33: 1240-1247.  1
2003 Word MJ, Adesida I, Berger PR. Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: L12. DOI: 10.1116/1.1629711  0.01
2003 Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/TED.2003.815375  1
2003 Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding J, Hirschman KD, Islam SS, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunneling dioded/CMOS MOBILE latch with high voltage swing 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 22-23. DOI: 10.1109/ISDRS.2003.1271977  0.44
2003 Jin N, Chung SY, Rice AT, Berger PR, Yu R, Thompson PE, Lake R. 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Applied Physics Letters. 83: 3308-3310. DOI: 10.1063/1.1618927  1
2003 Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114  1
2003 Chung SY, Jin N, Rice AT, Berger PR, Yu R, Fang ZQ, Thompson PE. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy Journal of Applied Physics. 93: 9104-9110. DOI: 10.1063/1.1569029  1
2002 Chung S, Berger PR, Fang Z, Thompson PE. Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy Mrs Proceedings. 745. DOI: 10.1557/PROC-745-N6.9  0.04
2002 Xu Y, Berger P, Cho J, Timmons RB. Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics Materials Research Society Symposium - Proceedings. 736: 195-200.  1
2001 Hobart KD, Thompson PE, Rommel SL, Dillon TE, Berger PR, Simons DS, Chi PH. `p-on-n' Si interband tunnel diode grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 290-293. DOI: 10.1116/1.1339011  1
2001 Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500  1
2001 Jin N, Berger PR, Rommel SL, Thompson PE, Hobart KP. pnp Si resonant interband tunnel diode with symmetrical NDR Electronics Letters. 37: 1412-1414. DOI: 10.1049/el:20010961  1
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  1
1999 Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492  1
1999 Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677  0.01
1998 Wright N, Khan A, Berger P, Guarin F, Iyer S. Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates Mrs Proceedings. 533. DOI: 10.1557/PROC-533-327  0.01
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  1
1998 Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207  1
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50.  1
1996 Berger P. MSM photodiodes Ieee Potentials. 15: 25-29. DOI: 10.1109/45.489734  0.01
1996 Gao W, Berger PR, Ervin MH, Pamulapati J, Lareau RT, Schauer S. Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts Journal of Applied Physics. 80: 7094-7103. DOI: 10.1063/1.363721  0.01
1996 Khan AT, Berger PR, Guarin FJ, Iyer SS. Band‐edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy Applied Physics Letters. 68: 3105-3107. DOI: 10.1063/1.116437  0.01
1996 Pamulapati J, Bhattacharya PK, Singh J, Berger PR, Snyder CW, Orr BG, Tober RL. Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system Journal of Electronic Materials. 25: 479-483. DOI: 10.1007/BF02666623  0.01
1996 Orner BA, Khan A, Hits D, Chen F, Roe K, Pickett J, Shao X, Berger PR, Kolodzey J, Wilson RG. Optical properties of Ge1-yCy alloys Journal of Electronic Materials. 25: 297-300. DOI: 10.1007/BF02666259  0.01
1995 Gao W, Berger PR, Hunsperger RG, Zydzik G, Rhodes WW, O’Bryan HM, Sivco D, Cho AY. Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy Applied Physics Letters. 66: 3471-3473. DOI: 10.1063/1.113767  0.01
1995 Kolodzey J, Berger PR, Orner BA, Hits D, Chen F, Khan A, Shao X, Waite MM, Shah SI, Swann CP, Unruh KM. Optical and electronic properties of SiGeC alloys grown on Si substrates Journal of Crystal Growth. 157: 386-391. DOI: 10.1016/0022-0248(95)00329-0  1
1994 Berger PR, Chu SNG, Logan RA, Byrne E, Coblentz D, Lee J, Ha NT, Dutta NK. Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)] Journal of Applied Physics. 76: 2562-2562. DOI: 10.1063/1.358542  0.01
1994 Gao W, Khan AS, Berger PR, Hunsperger RG, Zydzik G, O'Bryan HM, Sivco D, Cho AY. In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts Applied Physics Letters. 65: 1930-1932. DOI: 10.1063/1.112820  1
1994 Nichols D, Lopata J, Dutta N, Sivco D, Hobson W, Berger P, Cho A. Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step Electronics Letters. 30: 490-491. DOI: 10.1049/EL:19940332  0.01
1993 Berger PR, Chu SNG, Logan RA, Byrne E, Coblentz D, Lee J, Ha NT, Dutta NK. Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition Journal of Applied Physics. 73: 4095-4097. DOI: 10.1063/1.352839  0.01
1993 Dutta NK, Lopata J, Berger PR, Wang SJ, Smith PR, Sivco DL, Cho AY. 10 GHz bandwidth monolithicp‐i‐nmodulation‐doped field effect transistor photoreceiver Applied Physics Letters. 63: 2115-2116. DOI: 10.1063/1.110557  0.08
1993 Nichols D, Dutta N, Berger P, Smith P, Sivco D, Cho A. Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step Electronics Letters. 29: 1133. DOI: 10.1049/EL:19930756  0.01
1992 Berger PR, Dutta NK, Zydzik G, O’Bryan HM, Keller U, Smith PR, Lopata J, Sivco D, Cho AY. In0.53Ga0.47Asp‐i‐nphotodiodes with transparent cadmium tin oxide contacts Applied Physics Letters. 61: 1673-1675. DOI: 10.1063/1.108447  0.01
1991 Berger P, Bhattacharya P, Gupta S. A waveguide directional coupler with a nonlinear coupling medium Ieee Journal of Quantum Electronics. 27: 788-795. DOI: 10.1109/3.81390  0.01
1991 Zebda Y, Lai R, Bhattacharya P, Pavlidis D, Berger P, Brock T. Monolithically integrated InP-based front-end photoreceivers Ieee Transactions On Electron Devices. 38: 1324-1333. DOI: 10.1109/16.81623  0.04
1991 Chand N, Berger PR, Dutta NK. Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunctionNpNbipolar transistors grown by molecular beam epitaxy Applied Physics Letters. 59: 186-188. DOI: 10.1063/1.105961  0.01
1991 Berger PR, Dutta NK, Sivco DL, Cho AY. GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth Applied Physics Letters. 59: 2826-2828. DOI: 10.1063/1.105872  0.01
1991 Berger PR, Dutta NK, Choquette KD, Hasnain G, Chand N. Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers Applied Physics Letters. 59: 117-119. DOI: 10.1063/1.105547  0.01
1991 Berger PR, Dutta NK, Lopata J, Chu SNG, Chand N. Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs Applied Physics Letters. 58: 2698-2700. DOI: 10.1063/1.104787  0.01
1991 Dutta N, Lopata J, Berger P, Sivco D, Cho A. Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers Electronics Letters. 27: 680. DOI: 10.1049/EL:19910425  0.01
1990 Pamulapati J, Lai R, Ng GI, Chen YC, Berger PR, Bhattacharya PK, Singh J, Pavlidis D. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes Journal of Applied Physics. 68: 347-350. DOI: 10.1063/1.347140  0.04
1989 Biswas D, Berger PR, Bhattacharya P. Recombination velocity at molecular‐beam‐epitaxial GaAs regrown interfaces Journal of Applied Physics. 65: 2571-2573. DOI: 10.1063/1.342786  0.01
1989 Pamulapati J, Berger P, Chang K, Oh J, Chen Y, Singh J, Bhattacharya P, Gibala R. Growth phenomena and characteristics of strained InxGa1−xAs on GaAs Journal of Crystal Growth. 95: 193-196. DOI: 10.1016/0022-0248(89)90380-1  0.01
1989 Biswas D, Berger PR, Das U, Oh JE, Bhattacharya PK. Investigation of the interface region produced by molecular beam epitaxial regrowth Journal of Electronic Materials. 18: 137-142. DOI: 10.1007/BF02657399  0.01
1988 Berger PR, Chang K, Bhattacharya P, Singh J, Bajaj KK. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime Applied Physics Letters. 53: 684-686. DOI: 10.1063/1.99850  0.01
1988 Berger PR, Chen Y, Bhattacharya P, Pamulapati J, Vezzoli GC. Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler Applied Physics Letters. 52: 1125-1127. DOI: 10.1063/1.99182  0.01
1988 Das U, Chen Y, Bhattacharya PK, Berger PR. Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides Applied Physics Letters. 53: 2129-2131. DOI: 10.1063/1.100295  0.04
1987 Das U, Berger PR, Bhattacharya PK. InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide. Optics Letters. 12: 820-2. PMID 19741884  0.6
1987 Berger PR. A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffraction Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 1162. DOI: 10.1116/1.583704  0.01
1987 Chang KH, Berger PR, Singh J, Bhattacharya PK. Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs Applied Physics Letters. 51: 261-263. DOI: 10.1063/1.98467  0.01
1987 Berger PR, Bhattacharya PK, Singh J. Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction Journal of Applied Physics. 61: 2856-2860. DOI: 10.1063/1.337880  0.01
1987 Juang F, Hong W, Berger P, Bhattacharya P, Das U, Singh J. Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers Journal of Crystal Growth. 81: 373-377. DOI: 10.1016/0022-0248(87)90419-2  0.01
1986 Nashimoto Y. Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InP Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 540. DOI: 10.1116/1.583423  0.01
1986 Bhattacharya PK, Dhar S, Berger P, Juang F. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping Applied Physics Letters. 49: 470-472. DOI: 10.1063/1.97119  0.01
0 Berger PR. . DOI: 10.21883/PJTF.2018.07.45884.16730  0.01
0 Berger PR. . DOI: 10.1038/lsa.2017.150  0.01
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