| Year |
Citation |
Score |
| 2020 |
Storm DF, Growden TA, Cornuelle EM, Peri PR, Osadchy T, Daulton JW, Zhang W, Katzer DS, Hardy MT, Nepal N, Molnar R, Brown ER, Berger PR, Smith DJ, Meyer DJ. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214. DOI: 10.1116/6.0000052 |
0.835 |
|
| 2020 |
Zhang W, Growden TA, Storm DF, Meyer DJ, Berger PR, Brown ER. Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models Ieee Transactions On Electron Devices. 67: 75-79. DOI: 10.1109/Ted.2019.2955360 |
0.814 |
|
| 2020 |
Li M, Honkanen M, Liu X, Rokaya C, Schramm A, Fahlman M, Berger PR, Lupo D. 0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes Ieee Transactions On Electron Devices. 67: 360-364. DOI: 10.1109/Ted.2019.2954167 |
0.8 |
|
| 2020 |
Cornuelle EM, Growden TA, Storm DF, Brown ER, Zhang W, Downey BP, Gokhale V, Ruppalt LB, Champlain JG, Peri P, McCartney MR, Smith DJ, Meyer DJ, Berger PR. Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Aip Advances. 10: 055307. DOI: 10.1063/5.0005062 |
0.846 |
|
| 2020 |
Growden TA, Storm DF, Cornuelle EM, Brown ER, Zhang W, Downey BP, Roussos JA, Cronk N, Ruppalt LB, Champlain JG, Berger PR, Meyer DJ. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501. DOI: 10.1063/1.5139219 |
0.837 |
|
| 2019 |
Bhalerao SR, Lupo D, Zangiabadi A, Kymissis I, Leppaniemi J, Alastalo A, Berger PR. 0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High-$\kappa$ Al2O3 Dielectric Ieee Electron Device Letters. 40: 1112-1115. DOI: 10.1109/Led.2019.2918492 |
0.814 |
|
| 2019 |
Growden TA, Cornuelle EM, Storm DF, Zhang W, Brown ER, Whitaker LM, Daulton JW, Molnar R, Meyer DJ, Berger PR. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters. 114: 203503. DOI: 10.1063/1.5095056 |
0.831 |
|
| 2018 |
Growden TA, Zhang W, Brown ER, Storm DF, Meyer DJ, Berger PR. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures. Light, Science & Applications. 7: 17150. PMID 30839526 DOI: 10.1038/Lsa.2017.150 |
0.835 |
|
| 2018 |
Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. M2M Communication Assessment in Energy-Harvesting and Wake-Up Radio Assisted Scenarios Using Practical Components. Sensors (Basel, Switzerland). 18. PMID 30453515 DOI: 10.3390/S18113992 |
0.766 |
|
| 2018 |
Growden TA, Zhang W, Brown ER, Storm DF, Hansen K, Fakhimi P, Meyer DJ, Berger PR. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes Applied Physics Letters. 112: 033508. DOI: 10.1063/1.5010794 |
0.852 |
|
| 2017 |
Storm DF, Growden TA, Zhang W, Brown ER, Nepal N, Katzer DS, Hardy MT, Berger PR, Meyer DJ. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110. DOI: 10.1116/1.4977779 |
0.841 |
|
| 2017 |
Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. Viability Bounds of M2M Communication Using Energy-Harvesting and Passive Wake-Up Radio Ieee Access. 5: 27868-27878. DOI: 10.1109/Access.2017.2713878 |
0.762 |
|
| 2017 |
Guttman JJ, Chambers CB, Villagracia AR, Santos GNC, Berger PR. Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures Organic Electronics. 47: 228-234. DOI: 10.1016/J.Orgel.2017.05.015 |
0.471 |
|
| 2017 |
Rinne J, Keskinen J, Berger PR, Lupo D, Valkama M. Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications International Journal of Wireless Information Networks. 24: 291-299. DOI: 10.1007/S10776-017-0358-Z |
0.76 |
|
| 2016 |
Zhang W, Brown ER, Growden TA, Berger PR, Droopad R. A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes Ieee Transactions On Electron Devices. 63: 4993-4997. DOI: 10.1109/Ted.2016.2617681 |
0.805 |
|
| 2016 |
Berger PR, Chin A, Nishiyama A, Ieong M. Foreword Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices Ieee Journal of the Electron Devices Society. 4: 203-204. DOI: 10.1109/Jeds.2016.2597518 |
0.369 |
|
| 2016 |
Growden TA, Storm DF, Zhang W, Brown ER, Meyer DJ, Fakhimi P, Berger PR. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy Applied Physics Letters. 109. DOI: 10.1063/1.4961442 |
0.852 |
|
| 2015 |
Growden TA, Brown ER, Zhang W, Droopad R, Berger PR. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time Applied Physics Letters. 107. DOI: 10.1063/1.4933258 |
0.793 |
|
| 2014 |
Jung K, Yoon W, Park YB, Berger PR, Teixeira FL. Broadband Finite-Difference Time-Domain Modeling of Plasmonic Organic Photovoltaics Etri Journal. 36: 654-661. DOI: 10.4218/Etrij.14.0113.0767 |
0.567 |
|
| 2014 |
Heljo P, Wolff K, Lahtonen K, Valden M, Berger P, Majumdar H, Lupo D. Anodic Oxidation of Ultra-Thin Ti Layers on ITO Substrates and their Application in Organic Electronic Memory Elements Electrochimica Acta. 137: 91-98. DOI: 10.1016/J.Electacta.2014.05.157 |
0.809 |
|
| 2013 |
Ramesh A, Gupta S, Berger P, Theiss A, Ren F, Lee S, Casal P. Towards in vivo biosensors for low-cost protein sensing Electronics Letters. 49: 450-451. DOI: 10.1049/El.2012.4283 |
0.617 |
|
| 2012 |
Ramesh A, Growden TA, Berger PR, Loo R, Vandervorst W, Douhard B, Caymax M. Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 59: 602-609. DOI: 10.1109/Ted.2011.2180532 |
0.855 |
|
| 2012 |
Morrison JT, Storm M, Chowdhury E, Akli KU, Feldman S, Willis C, Daskalova RL, Growden T, Berger P, Ditmire T, Van Woerkom L, Freeman RR. Selective deuteron production using target normal sheath acceleration Physics of Plasmas. 19. DOI: 10.1063/1.3695061 |
0.776 |
|
| 2012 |
Ramesh A, Berger PR, Loo R. High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition Applied Physics Letters. 100: 092104. DOI: 10.1063/1.3684834 |
0.747 |
|
| 2011 |
Ramesh A, Park S, Berger PR. 90 nm 32 $\times$ 32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation Ieee Transactions On Circuits and Systems I: Regular Papers. 58: 2432-2445. DOI: 10.1109/Tcsi.2011.2123630 |
0.749 |
|
| 2010 |
Park S, Di Giacomo SJ, Anisha R, Berger PR, Thompson PE, Adesida I. Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 763-768. DOI: 10.1116/1.3455498 |
0.41 |
|
| 2010 |
Yoon W, Jung K, Liu J, Duraisamy T, Revur R, Teixeira FL, Sengupta S, Berger PR. Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles Solar Energy Materials and Solar Cells. 94: 128-132. DOI: 10.1016/J.Solmat.2009.08.006 |
0.586 |
|
| 2010 |
Yoon WJ, Berger PR. Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 11: 1719-1722. DOI: 10.1016/J.Orgel.2010.07.026 |
0.657 |
|
| 2010 |
Yoon WJ, Bhattacharyya D, Timmons RB, Berger PR. Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 11: 1767-1771. DOI: 10.1016/J.Orgel.2010.07.022 |
0.446 |
|
| 2009 |
Park S, Anisha R, Berger PR, Loo R, Nguyen ND, Takeuchi S, Caymax M. Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$ -Doping Layers Grown by Chemical Vapor Deposition Ieee Electron Device Letters. 30: 1173-1175. DOI: 10.1109/Led.2009.2030989 |
0.779 |
|
| 2009 |
Yu R, Anisha R, Jin N, Chung S, Berger PR, Gramila TJ, Thompson PE. Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy Journal of Applied Physics. 106: 034501. DOI: 10.1063/1.3187832 |
0.831 |
|
| 2009 |
Thompson PE, Jernigan GG, Park SY, Yu R, Anisha R, Berger PR, Pawlik D, Krom R, Rommel SL. P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance Electronics Letters. 45: 759-761. DOI: 10.1049/El.2009.1007 |
0.857 |
|
| 2008 |
Yoon WJ, Orlove SB, Olmon RL, Berger PR. Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDs Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2961823 |
0.787 |
|
| 2008 |
Jin N, Yu R, Chung S, Berger PR, Thompson PE. Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers Ieee Electron Device Letters. 29: 599-602. DOI: 10.1109/Led.2008.923208 |
0.841 |
|
| 2008 |
Anisha R, Jin N, Chung S, Yu R, Berger PR, Thompson PE. Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates Applied Physics Letters. 93: 102113. DOI: 10.1063/1.2981211 |
0.84 |
|
| 2008 |
Yoon WJ, Berger PR. 4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modification Applied Physics Letters. 92. DOI: 10.1063/1.2830619 |
0.643 |
|
| 2007 |
Tresback JS, Vasiliev AL, Padture NP, Park SY, Berger PR. Characterization and electrical properties of individual Au-NiO-Au heterojunction nanowires Ieee Transactions On Nanotechnology. 6: 676-686. DOI: 10.1109/Tnano.2007.908488 |
0.677 |
|
| 2007 |
Chung S, Jin N, Pavlovicz RE, Yu R, Berger PR, Thompson PE. Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Transactions On Nanotechnology. 6: 158-163. DOI: 10.1109/Tnano.2007.891831 |
0.832 |
|
| 2007 |
Park S, Yu R, Chung S, Berger P, Thompson P, Fay P. Sensitivity of Si-based zero-bias backward diodes for microwave detection Electronics Letters. 43: 295. DOI: 10.1049/El:20070299 |
0.727 |
|
| 2006 |
Jin N, Chung S, Yu R, Heyns RM, Berger PR, Thompson PE. The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits Ieee Transactions On Electron Devices. 53: 2243-2249. DOI: 10.1109/Ted.2006.879678 |
0.842 |
|
| 2006 |
Chung S, Yu R, Jin N, Park S, Berger PR, Thompson PE. Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications Ieee Electron Device Letters. 27: 364-367. DOI: 10.1109/Led.2006.873379 |
0.832 |
|
| 2006 |
Xu Y, Berger PR, Cho J, Timmons RB. Pulsed plasma polymerized dichlorotetramethyldisiloxane high- k gate dielectrics for polymer field-effect transistors Journal of Applied Physics. 99. DOI: 10.1063/1.2150248 |
0.543 |
|
| 2006 |
Park S, Chung S, Berger P, Yu R, Thompson P. Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si∕SiGe resonant interband tunnel diodes Electronics Letters. 42: 719. DOI: 10.1049/El:20060323 |
0.709 |
|
| 2006 |
Chung S, Park S, Daulton JW, Yu R, Berger PR, Thompson PE. Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications Solid-State Electronics. 50: 973-978. DOI: 10.1016/J.SSE.2006.04.044 |
0.325 |
|
| 2005 |
Jin N, Chung S, Yu R, Giacomo SJD, Berger PR, Thompson PE. RF performance and modeling of Si/SiGe resonant interband tunneling diodes Ieee Transactions On Electron Devices. 52: 2129-2135. DOI: 10.1109/Ted.2005.856183 |
0.846 |
|
| 2005 |
Jin N, Yu R, Chung S, Berger PR, Thompson PE, Fay P. High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance Ieee Electron Device Letters. 26: 575-578. DOI: 10.1109/Led.2005.852738 |
0.834 |
|
| 2005 |
Yoon WJ, Chung SY, Berger PR, Asar SM. Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2130395 |
0.816 |
|
| 2005 |
Jin N, Chung S, Yu R, Berger P, Thompson P. Temperature dependent DC∕RF performance of Si∕SiGe resonant interband tunnelling diodes Electronics Letters. 41: 559. DOI: 10.1049/El:20050020 |
0.842 |
|
| 2005 |
Jin N, Chung SY, Heyns RM, Berger PR, Yu R, Thompson PE, Rommel SL. Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes Materials Science in Semiconductor Processing. 8: 411-416. DOI: 10.1016/J.Mssp.2004.09.080 |
0.812 |
|
| 2004 |
Xu Y, Berger PR, Wilson JN, Bunz UH. Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I13.7 |
0.516 |
|
| 2004 |
Jin N, Chung SY, Heyns RM, Berger PR, Yu R, Thompson PE, Rommel SL. Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR Ieee Electron Device Letters. 25: 646-648. DOI: 10.1109/Led.2004.833845 |
0.836 |
|
| 2004 |
Xu Y, Berger PR, Wilson JN, Bunz UHF. Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection Applied Physics Letters. 85: 4219-4221. DOI: 10.1063/1.1812834 |
0.521 |
|
| 2004 |
Chung S, Jin N, Pavlovicz RE, Berger PR, Yu R, Fang Z, Thompson PE. Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy Journal of Applied Physics. 96: 747-753. DOI: 10.1063/1.1755436 |
0.844 |
|
| 2004 |
Weaver BD, Thompson PE, Jin N, Chung SY, Rice AT, Berger PR. Radiation tolerance of Si/Si 0.6Ge 0.4 resonant interband tunneling diodes Journal of Applied Physics. 95: 6406-6408. DOI: 10.1063/1.1710719 |
0.844 |
|
| 2004 |
Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109 |
0.842 |
|
| 2004 |
Xu Y, Berger PR. High electric-field effects on short-channel polythiophene polymer field-effect transistors Journal of Applied Physics. 95: 1497-1501. DOI: 10.1063/1.1636830 |
0.5 |
|
| 2004 |
Jin N, Chung S, Yu R, Berger P, Thompson P. Improved vertically stacked Si∕SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents Electronics Letters. 40: 1548. DOI: 10.1049/El:20046078 |
0.854 |
|
| 2004 |
Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Solid-State Electronics. 48: 1907-1910. DOI: 10.1016/J.Sse.2004.05.034 |
0.853 |
|
| 2004 |
Xu Y, Berger PR, Cho J, Timmons RB. Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors Journal of Electronic Materials. 33: 1240-1247. DOI: 10.1007/S11664-004-0128-4 |
0.571 |
|
| 2003 |
Word MJ, Adesida I, Berger PR. Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: L12. DOI: 10.1116/1.1629711 |
0.359 |
|
| 2003 |
Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/Ted.2003.815375 |
0.841 |
|
| 2003 |
Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding J, Hirschman KD, Islam SS, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR. Monolithically integrated Si/SiGe resonant interband tunneling dioded/CMOS MOBILE latch with high voltage swing 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 22-23. DOI: 10.1109/ISDRS.2003.1271977 |
0.762 |
|
| 2003 |
Jin N, Chung SY, Rice AT, Berger PR, Yu R, Thompson PE, Lake R. 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Applied Physics Letters. 83: 3308-3310. DOI: 10.1063/1.1618927 |
0.84 |
|
| 2003 |
Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114 |
0.752 |
|
| 2003 |
Chung SY, Jin N, Rice AT, Berger PR, Yu R, Fang ZQ, Thompson PE. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy Journal of Applied Physics. 93: 9104-9110. DOI: 10.1063/1.1569029 |
0.819 |
|
| 2002 |
Chung S, Berger PR, Fang Z, Thompson PE. Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy Mrs Proceedings. 745. DOI: 10.1557/Proc-745-N6.9 |
0.823 |
|
| 2002 |
Xu Y, Berger P, Cho J, Timmons RB. Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics Materials Research Society Symposium - Proceedings. 736: 195-200. DOI: 10.1557/Proc-736-D7.12 |
0.575 |
|
| 2001 |
Hobart KD, Thompson PE, Rommel SL, Dillon TE, Berger PR, Simons DS, Chi PH. `p-on-n' Si interband tunnel diode grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 290-293. DOI: 10.1116/1.1339011 |
0.788 |
|
| 2001 |
Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500 |
0.741 |
|
| 2001 |
Jin N, Berger PR, Rommel SL, Thompson PE, Hobart KP. pnp Si resonant interband tunnel diode with symmetrical NDR Electronics Letters. 37: 1412-1414. DOI: 10.1049/El:20010961 |
0.839 |
|
| 2000 |
Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581 |
0.798 |
|
| 2000 |
Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi PH, Simons DS. Epitaxial Si-based tunnel diodes Thin Solid Films. 380: 145-150. DOI: 10.1016/S0040-6090(00)01490-5 |
0.79 |
|
| 1999 |
Rommel SL, Dillon TE, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities Ieee Electron Device Letters. 20: 329-331. DOI: 10.1109/55.772366 |
0.81 |
|
| 1999 |
Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492 |
0.75 |
|
| 1999 |
Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677 |
0.43 |
|
| 1999 |
Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677 |
0.795 |
|
| 1998 |
Wright N, Khan A, Berger P, Guarin F, Iyer S. Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates Mrs Proceedings. 533. DOI: 10.1557/Proc-533-327 |
0.458 |
|
| 1998 |
Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419 |
0.806 |
|
| 1998 |
Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207 |
0.844 |
|
| 1998 |
Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50. DOI: 10.1016/S0040-6090(98)00441-6 |
0.489 |
|
| 1997 |
Shao X, Rommel SL, Orner BA, Kolodzey J, Berger PR. A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy Ieee Electron Device Letters. 18: 411-413. DOI: 10.1109/55.622513 |
0.839 |
|
| 1997 |
Shao X, Rommel SL, Orner BA, Berger PR, Kolodzey J, Unruh KM. Low resistance ohmic contacts to p-Ge1-xCx on Si Ieee Electron Device Letters. 18: 7-9. DOI: 10.1109/55.553059 |
0.819 |
|
| 1997 |
Gao W, Berger PR, Zydzik GJ, O'Bryan HM, Sivco DL, Cho AY. In/sub 0.53/Ga/sub 0.47/As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading Ieee Transactions On Electron Devices. 44: 2174-2179. DOI: 10.1109/16.644632 |
0.302 |
|
| 1997 |
Khan AT, Berger PR, Guarin FJ, Iyer SS. Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy Thin Solid Films. 294: 122-124. DOI: 10.1016/S0040-6090(96)09460-6 |
0.447 |
|
| 1996 |
Chen F, Orner BA, Guerin D, Khan A, Berger PR, Shah SI, Kolodzey J. Current transport characteristics of SiGeC/Si heterojunction diode Ieee Electron Device Letters. 17: 589-591. DOI: 10.1109/55.545780 |
0.51 |
|
| 1996 |
Gao W, Berger PR, Ervin MH, Pamulapati J, Lareau RT, Schauer S. Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts Journal of Applied Physics. 80: 7094-7103. DOI: 10.1063/1.363721 |
0.472 |
|
| 1996 |
Khan AT, Berger PR, Guarin FJ, Iyer SS. Band‐edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy Applied Physics Letters. 68: 3105-3107. DOI: 10.1063/1.116437 |
0.42 |
|
| 1996 |
Orner BA, Khan A, Hits D, Chen F, Roe K, Pickett J, Shao X, Berger PR, Kolodzey J, Wilson RG. Optical properties of Ge1-yCy alloys Journal of Electronic Materials. 25: 297-300. DOI: 10.1007/Bf02666259 |
0.764 |
|
| 1995 |
Gao W, Berger PR, Hunsperger RG, Zydzik G, Rhodes WW, O’Bryan HM, Sivco D, Cho AY. Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy Applied Physics Letters. 66: 3471-3473. DOI: 10.1063/1.113767 |
0.415 |
|
| 1995 |
Kolodzey J, Berger PR, Orner BA, Hits D, Chen F, Khan A, Shao X, Waite MM, Shah SI, Swann CP, Unruh KM. Optical and electronic properties of SiGeC alloys grown on Si substrates Journal of Crystal Growth. 157: 386-391. DOI: 10.1016/0022-0248(95)00329-0 |
0.769 |
|
| 1994 |
Berger PR, Chu SNG, Logan RA, Byrne E, Coblentz D, Lee J, Ha NT, Dutta NK. Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)] Journal of Applied Physics. 76: 2562-2562. DOI: 10.1063/1.358542 |
0.534 |
|
| 1994 |
Gao W, Khan AS, Berger PR, Hunsperger RG, Zydzik G, O'Bryan HM, Sivco D, Cho AY. In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts Applied Physics Letters. 65: 1930-1932. DOI: 10.1063/1.112820 |
0.403 |
|
| 1994 |
Nichols D, Lopata J, Dutta N, Sivco D, Hobson W, Berger P, Cho A. Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step Electronics Letters. 30: 490-491. DOI: 10.1049/El:19940332 |
0.572 |
|
| 1993 |
Berger PR, Dutta NK, Humphrey DA, Smith PR, Wang S-, Montgomery RK, Sivco D, Cho AY. 8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth Ieee Photonics Technology Letters. 5: 63-66. DOI: 10.1109/68.185062 |
0.551 |
|
| 1993 |
Berger PR, Chu SNG, Logan RA, Byrne E, Coblentz D, Lee J, Ha NT, Dutta NK. Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition Journal of Applied Physics. 73: 4095-4097. DOI: 10.1063/1.352839 |
0.592 |
|
| 1993 |
Dutta NK, Lopata J, Berger PR, Wang SJ, Smith PR, Sivco DL, Cho AY. 10 GHz bandwidth monolithicp‐i‐nmodulation‐doped field effect transistor photoreceiver Applied Physics Letters. 63: 2115-2116. DOI: 10.1063/1.110557 |
0.528 |
|
| 1993 |
Nichols D, Dutta N, Berger P, Smith P, Sivco D, Cho A. Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step Electronics Letters. 29: 1133. DOI: 10.1049/El:19930756 |
0.601 |
|
| 1992 |
Lopata J, Dutta NK, Hobson WS, Berger PR. Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates Semiconductors. 1676: 117-121. DOI: 10.1117/12.137650 |
0.591 |
|
| 1992 |
Berger PR, Dutta NK, Humphrey DA, Smith PR, Wang S-, Montgomery RK, Sivco D, Cho AY. 1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth Ieee Photonics Technology Letters. 4: 891-894. DOI: 10.1109/68.149899 |
0.54 |
|
| 1992 |
Berger PR, Dutta NK, Zydzik G, O’Bryan HM, Keller U, Smith PR, Lopata J, Sivco D, Cho AY. In0.53Ga0.47Asp‐i‐nphotodiodes with transparent cadmium tin oxide contacts Applied Physics Letters. 61: 1673-1675. DOI: 10.1063/1.108447 |
0.577 |
|
| 1991 |
Zebda Y, Lai R, Bhattacharya P, Pavlidis D, Berger P, Brock T. Monolithically integrated InP-based front-end photoreceivers Ieee Transactions On Electron Devices. 38: 1324-1333. DOI: 10.1109/16.81623 |
0.389 |
|
| 1991 |
Berger PR, Chand N, Dutta NK. An AlGaAs double‐heterojunction bipolar transistor grown by molecular‐beam epitaxy Applied Physics Letters. 59: 1099-1101. DOI: 10.1063/1.106356 |
0.571 |
|
| 1991 |
Chand N, Berger PR, Dutta NK. Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunctionNpNbipolar transistors grown by molecular beam epitaxy Applied Physics Letters. 59: 186-188. DOI: 10.1063/1.105961 |
0.62 |
|
| 1991 |
Berger PR, Dutta NK, Sivco DL, Cho AY. GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth Applied Physics Letters. 59: 2826-2828. DOI: 10.1063/1.105872 |
0.587 |
|
| 1991 |
Berger PR, Dutta NK, Choquette KD, Hasnain G, Chand N. Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers Applied Physics Letters. 59: 117-119. DOI: 10.1063/1.105547 |
0.511 |
|
| 1991 |
Berger PR, Dutta NK, Lopata J, Chu SNG, Chand N. Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs Applied Physics Letters. 58: 2698-2700. DOI: 10.1063/1.104787 |
0.553 |
|
| 1991 |
Dutta N, Lopata J, Berger P, Sivco D, Cho A. Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers Electronics Letters. 27: 680. DOI: 10.1049/El:19910425 |
0.535 |
|
| 1990 |
Pamulapati J, Lai R, Ng GI, Chen YC, Berger PR, Bhattacharya PK, Singh J, Pavlidis D. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes Journal of Applied Physics. 68: 347-350. DOI: 10.1063/1.347140 |
0.361 |
|
| 1989 |
Biswas D, Berger PR, Bhattacharya P. Recombination velocity at molecular‐beam‐epitaxial GaAs regrown interfaces Journal of Applied Physics. 65: 2571-2573. DOI: 10.1063/1.342786 |
0.368 |
|
| 1989 |
Pamulapati J, Berger P, Chang K, Oh J, Chen Y, Singh J, Bhattacharya P, Gibala R. Growth phenomena and characteristics of strained InxGa1−xAs on GaAs Journal of Crystal Growth. 95: 193-196. DOI: 10.1016/0022-0248(89)90380-1 |
0.52 |
|
| 1989 |
Biswas D, Berger PR, Das U, Oh JE, Bhattacharya PK. Investigation of the interface region produced by molecular beam epitaxial regrowth Journal of Electronic Materials. 18: 137-142. DOI: 10.1007/Bf02657399 |
0.601 |
|
| 1988 |
Berger PR, Chang K, Bhattacharya P, Singh J, Bajaj KK. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime Applied Physics Letters. 53: 684-686. DOI: 10.1063/1.99850 |
0.508 |
|
| 1988 |
Berger PR, Chen Y, Bhattacharya P, Pamulapati J, Vezzoli GC. Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler Applied Physics Letters. 52: 1125-1127. DOI: 10.1063/1.99182 |
0.509 |
|
| 1988 |
Das U, Chen Y, Bhattacharya PK, Berger PR. Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides Applied Physics Letters. 53: 2129-2131. DOI: 10.1063/1.100295 |
0.511 |
|
| 1987 |
Das U, Berger PR, Bhattacharya PK. InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide. Optics Letters. 12: 820-2. PMID 19741884 DOI: 10.1364/Ol.12.000820 |
0.556 |
|
| 1987 |
Berger PR. A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffraction Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 1162. DOI: 10.1116/1.583704 |
0.338 |
|
| 1987 |
Seo KS, Kothiyal GP, Berger PR, Bhattacharya PK. Anomalous Effects of Lamp Annealing in Modulation-Doped In0.53Ga 0.47As/In0.52Al 0.4gAs and Si-Implanted In0.53Ga0.47As Ieee Transactions On Electron Devices. 34: 235-240. DOI: 10.1109/T-Ed.1987.22912 |
0.449 |
|
| 1987 |
Chang KH, Berger PR, Singh J, Bhattacharya PK. Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs Applied Physics Letters. 51: 261-263. DOI: 10.1063/1.98467 |
0.565 |
|
| 1987 |
Berger PR, Bhattacharya PK, Singh J. Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction Journal of Applied Physics. 61: 2856-2860. DOI: 10.1063/1.337880 |
0.515 |
|
| 1987 |
Juang F, Hong W, Berger P, Bhattacharya P, Das U, Singh J. Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers Journal of Crystal Growth. 81: 373-377. DOI: 10.1016/0022-0248(87)90419-2 |
0.605 |
|
| 1986 |
Bhattacharya PK, Dhar S, Berger P, Juang F. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping Applied Physics Letters. 49: 470-472. DOI: 10.1063/1.97119 |
0.568 |
|
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