Junhyeok Bang - Publications

2004-2010 Physics Korea Advanced Institute of Science and Technology, Daejeon, South Korea 

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chaste J, Hnid I, Khalil L, Si C, Durnez A, Lafosse X, Zhao MQ, Johnson ATC, Zhang S, Bang J, Ouerghi A. Phase Transition in a Memristive Suspended MoS Monolayer Probed by Opto- and Electro-Mechanics. Acs Nano. PMID 33054170 DOI: 10.1021/acsnano.0c05721  0.8
2020 Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/acs.jpclett.0c01188  0.8
2019 Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/acs.nanolett.9b00613  0.96
2018 Kim H, Bang J, Kang J. Robust ferromagnetism in hydrogenated graphene mediated by spin-polarized pseudospin. Scientific Reports. 8: 13940. PMID 30224827 DOI: 10.1038/s41598-018-31934-0  0.48
2018 Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/PhysRevLett.120.185701  0.8
2017 Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp. PMID 28861554 DOI: 10.1039/c7cp03103c  0.8
2016 Bang J, Sun YY, Liu XQ, Gao F, Zhang SB. Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors. Physical Review Letters. 117: 126402. PMID 27689286 DOI: 10.1103/PhysRevLett.117.126402  0.88
2016 Han D, Bang J, Xie W, Meunier V, Zhang S. Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters. PMID 27552528 DOI: 10.1021/acs.jpclett.6b01608  0.8
2016 Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/ncomms11504  0.8
2016 Bang J, Sun YY, Song JH, Zhang SB. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices. Scientific Reports. 6: 24404. PMID 27075818 DOI: 10.1038/srep24404  0.8
2016 Seo S, Lee HU, Lee SC, Kim Y, Kim H, Bang J, Won J, Kim Y, Park B, Lee J. Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation. Scientific Reports. 6: 23736. PMID 27026070 DOI: 10.1038/srep23736  0.48
2015 Bang J, Sun YY, West D, Meyer BK, Zhang S. Molecular doping of ZnO by ammonia: A possible shallow acceptor Journal of Materials Chemistry C. 3: 339-344. DOI: 10.1039/c4tc02209b  0.88
2015 Lucking MC, Bang J, Terrones H, Sun YY, Zhang S. Multivalency-induced band gap opening at MoS2 edges Chemistry of Materials. 27: 3326-3331. DOI: 10.1021/acs.chemmater.5b00398  0.88
2013 Wang Z, Gu M, Zhou Y, Zu X, Connell JG, Xiao J, Perea D, Lauhon LJ, Bang J, Zhang S, Wang C, Gao F. Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys. Nano Letters. 13: 4511-6. PMID 23944904 DOI: 10.1021/Nl402429A  0.88
2013 Bang J, Meng S, Sun YY, West D, Wang Z, Gao F, Zhang SB. Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene. Proceedings of the National Academy of Sciences of the United States of America. 110: 908-11. PMID 23277576 DOI: 10.1073/pnas.1210313110  0.8
2013 Bang J, Sun YY, Abtew TA, Samanta A, Zhang P, Zhang SB. Difficulty in predicting shallow defects with hybrid functionals: Implication of the long-range exchange interaction Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.035134  0.88
2011 Li MF, Mao D, Ren SY. Defects in semiconductors: Global predictions of T2symmetric deep level wavefunctions in semiconductors Selected Semiconductor Research. 32-36. DOI: 10.1142/9781848164079_0002  0.36
2010 Bang J, Chang KJ. Localization and one-parameter scaling in hydrogenated graphene Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.193412  0.88
2010 Choe DH, Bang J, Chang KJ. Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125005  0.96
2009 Bang J, Chang KJ. Atomic structure and diffusion of hydrogen in ZnO Journal of the Korean Physical Society. 55: 98-102. DOI: 10.3938/jkps.55.98  0.88
2009 Jwa S, Bang J, Chang KJ. Chemical bonding and diffusion of B dopants in C-predoped Si Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.075206  0.88
2008 Bang J, Chang KJ. Diffusion and thermal stability of hydrogen in ZnO Applied Physics Letters. 92. DOI: 10.1063/1.2906379  0.88
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