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Dechao Geng - Publications

Affiliations: 
Singapore University of Technology and Design 
Area:
low-dimensional nanomaterials
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63 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Li L, Zhang Q, Li H, Geng D. Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures. Chemical Communications (Cambridge, England). PMID 37991755 DOI: 10.1039/d3cc04914k  0.451
2021 Han Z, Li L, Jiao F, Yu G, Wei Z, Geng D, Hu W. Continuous orientated growth of scaled single-crystal 2D monolayer films. Nanoscale Advances. 3: 6545-6567. PMID 36132651 DOI: 10.1039/d1na00545f  0.537
2021 Li L, Zhang Y, Zhang R, Han Z, Dong H, Yu G, Geng D, Yang HY. A minireview on chemical vapor deposition growth of wafer-scale monolayer -BN single crystals. Nanoscale. PMID 34652355 DOI: 10.1039/d1nr04034k  0.524
2021 Han Z, Li M, Li L, Jiao F, Wei Z, Geng D, Hu W. When graphene meets white graphene - recent advances in the construction of graphene and h-BN heterostructures. Nanoscale. 13: 13174-13194. PMID 34477725 DOI: 10.1039/d1nr03733a  0.52
2020 Fan Y, Li L, Yu G, Geng D, Zhang X, Hu W. Recent Advances in Growth of Large-Sized 2D Single Crystals on Cu Substrates. Advanced Materials (Deerfield Beach, Fla.). e2003956. PMID 33191567 DOI: 10.1002/adma.202003956  0.557
2020 Pam ME, Huang S, Fan S, Geng D, Kong D, Chen S, Ding M, Guo L, Ang LK, Yang HY. Interface engineering by atomically thin layer tungsten disulfide catalyst for high performance Li–S battery Materials Today Energy. 16: 100380. DOI: 10.1016/J.Mtener.2019.100380  0.39
2019 Geng D, Hu J, Fu W, Ang LK, Yang HY. Graphene-induced in-situ growth of monolayer and bilayer 2D SiC crystals toward high-temperature electronics. Acs Applied Materials & Interfaces. PMID 31573176 DOI: 10.1021/Acsami.9B14069  0.578
2019 Pam ME, Hu J, Ang YS, Huang S, Kong D, Shi Y, Zhao X, Geng D, Pennycook SJ, Ang LK, Yang HY. High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronics Band Structure for Hydrogen Evolution Reaction. Acs Applied Materials & Interfaces. PMID 31433150 DOI: 10.1021/Acsami.9B08232  0.37
2019 Wang H, Xue X, Jiang Q, Wang Y, Geng D, Cai L, Wang L, Xu Z, Yu G. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate. Journal of the American Chemical Society. PMID 31265267 DOI: 10.1021/Jacs.9B05705  0.771
2019 Dong J, Geng D, Liu F, Ding F. Formation of Twinned Graphene Polycrystals. Angewandte Chemie (International Ed. in English). PMID 30968518 DOI: 10.1002/Anie.201902441  0.648
2019 Pam ME, Li Z, Ang YS, Shi Y, Geng D, Huang S, Zhao X, Pennycook SJ, Yao H, Gong X, Ang LK, Yang HY. Thermal-Assisted Vertical Electron Injections in Few-Layer Pyramidal-Structured MoS Crystals. The Journal of Physical Chemistry Letters. PMID 30821153 DOI: 10.1021/Acs.Jpclett.9B00274  0.38
2019 Gong X, Zhao X, Pam ME, Yao H, Li Z, Geng D, Pennycook SJ, Shi Y, Yang HY. Location-selective growth of two-dimensional metallic/semiconducting transition metal dichalcogenide heterostructures. Nanoscale. PMID 30789188 DOI: 10.1039/C8Nr08744J  0.369
2019 Zhao X, Sun W, Geng D, Fu W, Dan J, Xie Y, Kent PRC, Zhou W, Pennycook SJ, Loh KP. Edge Segregated Polymorphism in 2D Molybdenum Carbide. Advanced Materials (Deerfield Beach, Fla.). e1808343. PMID 30785651 DOI: 10.1002/Adma.201808343  0.312
2019 Geng D, Dong J, Kee Ang L, Ding F, Yang HY. In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains Npg Asia Materials. 11. DOI: 10.1038/S41427-019-0162-6  0.605
2019 He W, Geng D, Xu Z. Pattern evolution characterizes the mechanism and efficiency of CVD graphene growth Carbon. 141: 316-322. DOI: 10.1016/J.Carbon.2018.09.046  0.504
2018 Geng D, Yang HY. Recent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides. Advanced Materials (Deerfield Beach, Fla.). e1800865. PMID 30063268 DOI: 10.1002/Adma.201800865  0.486
2018 Geng D, Yu G. Liquid catalysts: an innovative solution to 2D materials in CVD processes Materials Horizons. 5: 1021-1034. DOI: 10.1039/C8Mh01088A  0.483
2018 Geng D, Zhao X, Zhou K, Fu W, Xu Z, Pennycook SJ, Ang LK, Yang HY. From Self‐Assembly Hierarchical h‐BN Patterns to Centimeter‐Scale Uniform Monolayer h‐BN Film Advanced Materials Interfaces. 6: 1801493. DOI: 10.1002/Admi.201801493  0.303
2017 Zhao X, Fu D, Ding Z, Zhang Y, Wan D, Tan SJR, Chen Z, Leng K, Dan J, Fu W, Geng D, Song P, Du Y, Venkatesan T, Pantelides ST, et al. Mo-terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film. Nano Letters. PMID 29253330 DOI: 10.1021/Acs.Nanolett.7B04426  0.325
2017 Liu W, Ulaganathan M, Abdelwahab I, Luo X, Chen Z, Tan SJR, Wang X, Liu Y, Geng D, Bao Y, Chen J, Loh KP. Two-Dimensional Polymer Synthesized via Solid-State Polymerization for High-Performance Supercapacitors. Acs Nano. PMID 29244482 DOI: 10.1021/Acsnano.7B08354  0.623
2017 Chen J, Zhao X, Grinblat G, Chen Z, Tan SJR, Fu W, Ding Z, Abdelwahab I, Li Y, Geng D, Liu Y, Leng K, Liu B, Liu W, Tang W, et al. Homoepitaxial Growth of Large-Scale Highly Organized Transition Metal Dichalcogenide Patterns. Advanced Materials (Deerfield Beach, Fla.). PMID 29219211 DOI: 10.1002/Adma.201704674  0.685
2017 Geng D, Zhao X, Chen Z, Sun W, Fu W, Chen J, Liu W, Zhou W, Loh KP. Direct Synthesis of Large-Area 2D Mo2 C on In Situ Grown Graphene. Advanced Materials (Deerfield Beach, Fla.). PMID 28722179 DOI: 10.1002/Adma.201700072  0.792
2017 Liu SW, Wang HP, Xu Q, Ma TB, Yu G, Zhang C, Geng D, Yu Z, Zhang S, Wang W, Hu YZ, Wang H, Luo J. Robust microscale superlubricity under high contact pressure enabled by graphene-coated microsphere. Nature Communications. 8: 14029. PMID 28195130 DOI: 10.1038/Ncomms14029  0.75
2017 Chen J, Zhao X, Tan SJ, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum TC, et al. Chemical Vapor Deposition of Large-size Monolayer MoSe2 Crystals on Molten Glass. Journal of the American Chemical Society. PMID 28051869 DOI: 10.1021/Jacs.6B12156  0.685
2017 Luo B, Gao E, Geng D, Wang H, Xu Z, Yu G. Etching-Controlled Growth of Graphene by Chemical Vapor Deposition Chemistry of Materials. 29: 1022-1027. DOI: 10.1021/Acs.Chemmater.6B03672  0.839
2017 Wang H, Gao E, Liu P, Zhou D, Geng D, Xue X, Wang L, Jiang K, Xu Z, Yu G. Facile growth of vertically-aligned graphene nanosheets via thermal CVD: The experimental and theoretical investigations Carbon. 121: 1-9. DOI: 10.1016/J.Carbon.2017.05.074  0.715
2016 Chen J, Tang W, Tian B, Liu B, Zhao X, Liu Y, Ren T, Liu W, Geng D, Jeong HY, Shin HS, Zhou W, Loh KP. Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 3: 1500033. PMID 27818906 DOI: 10.1002/Advs.201600033  0.685
2016 Luo B, Chen B, Wang A, Geng D, Xu J, Wang H, Zhang Z, Peng L, Xu Z, Yu G. Chemical vapor deposition of bilayer graphene with layer-resolved growth through dynamic pressure control Journal of Materials Chemistry C. 4: 7464-7471. DOI: 10.1039/C6Tc02339H  0.791
2016 Geng D, Wang H, Yang J, Yu G. Controlled assembly of SiOx nanoparticles in graphene Materials Horizons. 3: 568-574. DOI: 10.1039/C6Mh00277C  0.654
2016 Chen J, Zhou W, Tang W, Tian B, Zhao X, Xu H, Liu Y, Geng D, Tan SJR, Fu W, Loh KP. Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates Chemistry of Materials. 28: 7194-7197. DOI: 10.1021/Acs.Chemmater.6B03639  0.632
2016 Chen J, Tang W, Tian B, Liu B, Zhao X, Liu Y, Ren T, Liu W, Geng D, Jeong HY, Shin HS, Zhou W, Loh KP. Chemical Vapor Deposition of High-Quality Large-Sized MoS2Crystals on Silicon Dioxide Substrates Advanced Science. 3. DOI: 10.1002/advs.201600033  0.653
2016 Geng D, Gao E, Wang H, Xu J, Xu Z, Yu G. Large-Area Growth of Five-Lobed and Triangular Graphene Grains on Textured Cu Substrate Advanced Materials Interfaces. 3: 1600347. DOI: 10.1002/Admi.201600347  0.695
2015 Geng D, Wang H, Wan Y, Xu Z, Luo B, Xu J, Yu G. Direct Top-Down Fabrication of Large-Area Graphene Arrays by an In Situ Etching Method. Advanced Materials (Deerfield Beach, Fla.). 27: 4195-9. PMID 26095295 DOI: 10.1002/Adma.201501524  0.703
2015 Geng D, Wang H, Yu G. Graphene single crystals: size and morphology engineering. Advanced Materials (Deerfield Beach, Fla.). 27: 2821-37. PMID 25809643 DOI: 10.1002/Adma.201405887  0.772
2015 Xu J, Zhang W, Geng D, Liu Y, Wang H, Tang N, Yu G. Magnetic Properties of a Bottom-Up Synthesis Analogous Graphene with N-Doped Zigzag Edges Advanced Electronic Materials. 1: 1500084. DOI: 10.1002/Aelm.201500084  0.671
2015 Geng D, Wang H, Wan Y, Xu Z, Luo B, Xu J, Yu G. Graphene Arrays: Direct Top-Down Fabrication of Large-Area Graphene Arrays by an In Situ Etching Method (Adv. Mater. 28/2015) Advanced Materials. 27: 4194-4194. DOI: 10.1002/Adma.201570189  0.821
2014 Geng D, Meng L, Chen B, Gao E, Yan W, Yan H, Luo B, Xu J, Wang H, Mao Z, Xu Z, He L, Zhang Z, Peng L, Yu G. Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface. Advanced Materials (Deerfield Beach, Fla.). 26: 6423-9. PMID 25043403 DOI: 10.1002/Adma.201401277  0.834
2014 Chen J, Guo Y, Huang L, Xue Y, Geng D, Liu H, Wu B, Yu G, Hu W, Liu Y, Zhu D. Controllable fabrication of ultrathin free-standing graphene films. Philosophical Transactions. Series a, Mathematical, Physical, and Engineering Sciences. 372: 20130017. PMID 24615152 DOI: 10.1098/Rsta.2013.0017  0.849
2014 Luo B, Chen B, Meng L, Geng D, Liu H, Xu J, Zhang Z, Zhang H, Peng L, He L, Hu W, Liu Y, Yu G. Layer-stacking growth and electrical transport of hierarchical graphene architectures. Advanced Materials (Deerfield Beach, Fla.). 26: 3218-24. PMID 24519997 DOI: 10.1002/Adma.201305627  0.842
2014 Chen J, Guo Y, Jiang L, Xu Z, Huang L, Xue Y, Geng D, Wu B, Hu W, Yu G, Liu Y. Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates. Advanced Materials (Deerfield Beach, Fla.). 26: 1348-53. PMID 24338972 DOI: 10.1002/Adma.201304872  0.867
2014 Geng D, Meng L, Chen B, Gao E, Yan W, Yan H, Luo B, Xu J, Wang H, Mao Z, Xu Z, He L, Zhang Z, Peng L, Yu G. Graphene: Controlled Growth of Single-Crystal Twelve-Pointed Graphene Grains on a Liquid Cu Surface (Adv. Mater. 37/2014) Advanced Materials. 26: 6519-6519. DOI: 10.1002/Adma.201470256  0.822
2014 Luo B, Chen B, Meng L, Geng D, Liu H, Xu J, Zhang Z, Zhang H, Peng L, He L, Hu W, Liu Y, Yu G. Graphene: Layer-Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (Adv. Mater. 20/2014) Advanced Materials. 26: 3355-3355. DOI: 10.1002/Adma.201470135  0.837
2014 Chen J, Guo Y, Jiang L, Xu Z, Huang L, Xue Y, Geng D, Wu B, Hu W, Yu G, Liu Y. Graphene: Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates (Adv. Mater. 9/2014) Advanced Materials. 26: 1471-1471. DOI: 10.1002/Adma.201470059  0.871
2014 Geng D, Luo B, Xu J, Guo Y, Wu B, Hu W, Liu Y, Yu G. Graphene: Self-Aligned Single-Crystal Graphene Grains (Adv. Funct. Mater. 12/2014) Advanced Functional Materials. 24: 1649-1649. DOI: 10.1002/Adfm.201470074  0.857
2014 Geng D, Luo B, Xu J, Guo Y, Wu B, Hu W, Liu Y, Yu G. Self-aligned single-crystal graphene grains Advanced Functional Materials. 24: 1664-1670. DOI: 10.1002/Adfm.201302166  0.87
2013 Jiang L, Wu B, Liu H, Huang Y, Chen J, Geng D, Gao H, Liu Y. A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials. Advanced Materials (Deerfield Beach, Fla.). 25: 7015-9. PMID 24123236 DOI: 10.1002/Adma.201302941  0.667
2013 Geng D, Wu B, Guo Y, Luo B, Xue Y, Chen J, Yu G, Liu Y. Fractal etching of graphene. Journal of the American Chemical Society. 135: 6431-4. PMID 23586921 DOI: 10.1021/Ja402224H  0.852
2013 Huang L, Wu B, Chen J, Xue Y, Geng D, Guo Y, Yu G, Liu Y. Gram-scale synthesis of graphene sheets by a catalytic arc-discharge method. Small (Weinheim An Der Bergstrasse, Germany). 9: 1330-5. PMID 23463696 DOI: 10.1002/Smll.201202802  0.868
2013 Chen J, Guo Y, Wen Y, Huang L, Xue Y, Geng D, Wu B, Luo B, Yu G, Liu Y. Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates. Advanced Materials (Deerfield Beach, Fla.). 25: 992-7. PMID 23161470 DOI: 10.1002/Adma.201202973  0.851
2013 Meng L, Su Y, Geng D, Yu G, Liu Y, Dou R, Nie J, He L. Hierarchy of graphene wrinkles induced by thermal strain engineering Applied Physics Letters. 103: 251610. DOI: 10.1063/1.4857115  0.718
2013 Luo B, Liu H, Jiang L, Jiang L, Geng D, Wu B, Hu W, Liu Y, Yu G. Synthesis and morphology transformation of single-crystal graphene domains based on activated carbon dioxide by chemical vapor deposition Journal of Materials Chemistry C. 1: 2990. DOI: 10.1039/C3Tc30124A  0.825
2013 Wu B, Geng D, Xu Z, Guo Y, Huang L, Xue Y, Chen J, Yu G, Liu Y. Self-organized graphene crystal patterns Npg Asia Materials. 5: e36-e36. DOI: 10.1038/Am.2012.68  0.818
2013 Huang L, Wu B, Chen J, Xue Y, Geng D, Guo Y, Yu G, Liu Y. Graphene Sheets: Gram-Scale Synthesis of Graphene Sheets by a Catalytic Arc-Discharge Method (Small 8/2013) Small. 9: 1329-1329. DOI: 10.1002/Smll.201370049  0.86
2013 Jiang L, Wu B, Liu H, Huang Y, Chen J, Geng D, Gao H, Liu Y. Nanoscale Materials: A General Approach for Fast Detection of Charge Carrier Type and Conductivity Difference in Nanoscale Materials (Adv. Mater. 48/2013) Advanced Materials. 25: 6916-6916. DOI: 10.1002/Adma.201370300  0.649
2013 Chen J, Guo Y, Wen Y, Huang L, Xue Y, Geng D, Wu B, Luo B, Yu G, Liu Y. Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013) Advanced Materials. 25: 938-938. DOI: 10.1002/Adma.201370040  0.856
2012 Xue Y, Wu B, Jiang L, Guo Y, Huang L, Chen J, Tan J, Geng D, Luo B, Hu W, Yu G, Liu Y. Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition. Journal of the American Chemical Society. 134: 11060-3. PMID 22721268 DOI: 10.1021/Ja302483T  0.863
2012 Geng D, Wu B, Guo Y, Huang L, Xue Y, Chen J, Yu G, Jiang L, Hu W, Liu Y. Uniform hexagonal graphene flakes and films grown on liquid copper surface. Proceedings of the National Academy of Sciences of the United States of America. 109: 7992-6. PMID 22509001 DOI: 10.1073/Pnas.1200339109  0.84
2012 Wu B, Geng D, Liu Y. Reply to Harutyunyan: Continuous and uniform graphene film grown on liquid Cu surface Proceedings of the National Academy of Sciences. 109: E2100-E2100. DOI: 10.1073/Pnas.1208665109  0.674
2011 Chen J, Wen Y, Guo Y, Wu B, Huang L, Xue Y, Geng D, Wang D, Yu G, Liu Y. Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates. Journal of the American Chemical Society. 133: 17548-51. PMID 21988639 DOI: 10.1021/Ja2063633  0.859
2011 Wu B, Geng D, Guo Y, Huang L, Xue Y, Zheng J, Chen J, Yu G, Liu Y, Jiang L, Hu W. Equiangular hexagon-shape-controlled synthesis of graphene on copper surface. Advanced Materials (Deerfield Beach, Fla.). 23: 3522-5. PMID 21726004 DOI: 10.1002/Adma.201101746  0.846
2011 Wu B, Geng D, Liu Y. Evaluation of metallic and semiconducting single-walled carbon nanotube characteristics. Nanoscale. 3: 2074-85. PMID 21387025 DOI: 10.1039/C0Nr00958J  0.437
2011 Xue Y, Wu B, Guo Y, Huang L, Jiang L, Chen J, Geng D, Liu Y, Hu W, Yu G. Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition Nano Research. 4: 1208-1214. DOI: 10.1007/S12274-011-0171-4  0.855
2011 Wu B, Geng D, Guo Y, Huang L, Chen J, Xue Y, Yu G, Liu Y, Kajiura H, Li Y. Ultrahigh density modulation of aligned single-walled carbon nanotube arrays Nano Research. 4: 931-937. DOI: 10.1007/S12274-011-0149-2  0.757
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