Year |
Citation |
Score |
2022 |
Zhou T, Dartiailh MC, Sardashti K, Han JE, Matos-Abiague A, Shabani J, Žutić I. Fusion of Majorana bound states with mini-gate control in two-dimensional systems. Nature Communications. 13: 1738. PMID 35365644 DOI: 10.1038/s41467-022-29463-6 |
0.561 |
|
2021 |
Elfeky BH, Lotfizadeh N, Schiela WF, Strickland WM, Dartiailh M, Sardashti K, Hatefipour M, Yu P, Pankratova N, Lee H, Manucharyan VE, Shabani J. Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions. Nano Letters. PMID 34570504 DOI: 10.1021/acs.nanolett.1c02771 |
0.58 |
|
2021 |
Barati F, Thompson JP, Dartiailh MC, Sardashti K, Mayer W, Yuan J, Wickramasinghe K, Watanabe K, Taniguchi T, Churchill H, Shabani J. Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric. Nano Letters. PMID 33617256 DOI: 10.1021/acs.nanolett.0c03183 |
0.617 |
|
2020 |
Yuan J, Hatefipour M, Magill BA, Mayer W, Dartiailh MC, Sardashti K, Wickramasinghe KS, Khodaparast GA, Matsuda YH, Kohama Y, Yang Z, Thapa S, Stanton CJ, Shabani J. Experimental measurements of effective mass in near-surface InAs quantum wells Physical Review B. 101. DOI: 10.1103/Physrevb.101.205310 |
0.584 |
|
2019 |
Khazaee M, Sardashti K, Chung C, Sun J, Zhou H, Bergmann E, Dunlap-Shohl WA, Han Q, Hill IG, Jones J, Lupascu DC, Mitzi DB. Dual-source evaporation of silver bismuth iodide films for planar junction solar cells Journal of Materials Chemistry A. 7: 2095-2105. DOI: 10.1039/C8Ta08679F |
0.345 |
|
2018 |
Kwak I, Sardashti K, Clemons MS, Ueda ST, Fruhberger B, Oktyabrsky S, Kummel AC. (Invited) HfO2/Al2O3 Nanolaminate on Si0.7Ge0.3(100) Surface by Thermal Atomic Layer Deposition Ecs Transactions. 86: 281-289. DOI: 10.1149/08607.0281ecst |
0.301 |
|
2018 |
Khazaee M, Sardashti K, Sun J, Zhou H, Clegg C, Hill IG, Jones JL, Lupascu DC, Mitzi DB. A Versatile Thin-Film Deposition Method for Multidimensional Semiconducting Bismuth Halides Chemistry of Materials. 30: 3538-3544. DOI: 10.1021/Acs.Chemmater.8B01341 |
0.383 |
|
2018 |
Wolf S, Edmonds M, Sardashti K, Clemons M, Park JH, Yoshida N, Dong L, Nemani S, Yieh E, Holmes R, Alvarez D, Kummel AC. Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3 Applied Surface Science. 439: 689-696. DOI: 10.1016/J.Apsusc.2018.01.038 |
0.581 |
|
2017 |
Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC. Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells. Acs Applied Materials & Interfaces. PMID 28452464 DOI: 10.1021/Acsami.7B01838 |
0.6 |
|
2017 |
Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081 |
0.6 |
|
2017 |
Haight R, Gershon T, Gunawan O, Antunez P, Bishop D, Lee YS, Gokmen T, Sardashti K, Chagarov E, Kummel A. Industrial perspectives on earth abundant, multinary thin film photovoltaics Semiconductor Science and Technology. 32: 033004. DOI: 10.1088/1361-6641/Aa5C18 |
0.496 |
|
2017 |
Gershon T, Sardashti K, Lee YS, Gunawan O, Singh S, Bishop D, Kummel AC, Haight R. Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices Acta Materialia. 126: 383-388. DOI: 10.1016/J.Actamat.2017.01.003 |
0.593 |
|
2016 |
Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano. PMID 27305595 DOI: 10.1021/Acsnano.6B02648 |
0.563 |
|
2016 |
Sardashti K, Haight R, Anderson R, Contreras MA, Fruhberger B, Kummel AC. Grazing Incidence Cross-sectioning of Thin-Film Solar Cells via Cryogenic Focused Ion Beam: A case study on CIGSe. Acs Applied Materials & Interfaces. PMID 27248803 DOI: 10.1021/Acsami.6B04214 |
0.53 |
|
2016 |
Chagarov E, Sardashti K, Kummel AC, Lee YS, Haight R, Gershon TS. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics. The Journal of Chemical Physics. 144: 104704. PMID 26979701 DOI: 10.1063/1.4943270 |
0.548 |
|
2016 |
Alvarez Jr D, Spiegelman JJ, Kummel AC, Edmonds M, Sardashti K, Wolf S, Holmes R. Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas Solid State Phenomena. 255: 31-35. DOI: 10.4028/Www.Scientific.Net/Ssp.255.31 |
0.489 |
|
2016 |
Sardashti K, Paul D, Hitzman C, Hammond J, Haight R, Kummel AC. Nano-scale compositional analysis of surfaces and interfaces in earth-abundant kesterite solar cells Journal of Materials Research. 31: 3473-3481. DOI: 10.1557/Jmr.2016.389 |
0.519 |
|
2016 |
Chagarov E, Sardashti K, Haight R, Mitzi DB, Kummel AC. Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams Journal of Chemical Physics. 145. DOI: 10.1063/1.4959591 |
0.495 |
|
2016 |
Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460 |
0.559 |
|
2016 |
Sardashti K, Hu KT, Tang K, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces Applied Surface Science. 366: 455-463. DOI: 10.1016/J.Apsusc.2016.01.123 |
0.579 |
|
2016 |
Gershon T, Sardashti K, Gunawan O, Mankad R, Singh S, Lee YS, Ott JA, Kummel A, Haight R. Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2
ZnSnSe4
Absorber Advanced Energy Materials. 6: 1601182. DOI: 10.1002/Aenm.201601182 |
0.558 |
|
2015 |
Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces. Acs Applied Materials & Interfaces. 7: 26275-83. PMID 26575590 DOI: 10.1021/Acsami.5B08727 |
0.563 |
|
2015 |
Park JH, Movva HC, Chagarov E, Sardashti K, Chou H, Kwak I, Hu KT, Fullerton-Shirey SK, Choudhury P, Banerjee SK, Kummel AC. In-Situ Observation of Initial Stage in Dielectric Growth, and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces. Nano Letters. PMID 26393281 DOI: 10.1021/Acs.Nanolett.5B02429 |
0.571 |
|
2015 |
Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer. Journal of the American Chemical Society. 137: 8526-33. PMID 26070022 DOI: 10.1021/Jacs.5B03660 |
0.595 |
|
2015 |
Sardashti K, Haight R, Gokmen T, Wang W, Chang LY, Mitzi DB, Kummel AC. Impact of nanoscale elemental distribution in high-performance kesterite solar cells Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201402180 |
0.545 |
|
2013 |
Bashouti MY, Sardashti K, Ristein J, Christiansen S. Kinetic study of H-terminated silicon nanowires oxidation in very first stages. Nanoscale Research Letters. 8: 41. PMID 23336401 DOI: 10.1186/1556-276X-8-41 |
0.372 |
|
2013 |
Bashouti MY, Sardashti K, Schmitt SW, Pietsch M, Ristein J, Haick H, Christiansen SH. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology Progress in Surface Science. 88: 39-60. DOI: 10.1016/J.Progsurf.2012.12.001 |
0.423 |
|
2012 |
Bashouti MY, Sardashti K, Ristein J, Christiansen SH. Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. Physical Chemistry Chemical Physics : Pccp. 14: 11877-81. PMID 22837043 DOI: 10.1039/C2Cp41709J |
0.388 |
|
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