Kasra Sardashti, Ph.D. - Publications

Affiliations: 
2021- Physics Clemson University, Clemson, SC, United States 
Area:
Condensed Matter Physics

28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Zhou T, Dartiailh MC, Sardashti K, Han JE, Matos-Abiague A, Shabani J, Žutić I. Fusion of Majorana bound states with mini-gate control in two-dimensional systems. Nature Communications. 13: 1738. PMID 35365644 DOI: 10.1038/s41467-022-29463-6  0.561
2021 Elfeky BH, Lotfizadeh N, Schiela WF, Strickland WM, Dartiailh M, Sardashti K, Hatefipour M, Yu P, Pankratova N, Lee H, Manucharyan VE, Shabani J. Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions. Nano Letters. PMID 34570504 DOI: 10.1021/acs.nanolett.1c02771  0.58
2021 Barati F, Thompson JP, Dartiailh MC, Sardashti K, Mayer W, Yuan J, Wickramasinghe K, Watanabe K, Taniguchi T, Churchill H, Shabani J. Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric. Nano Letters. PMID 33617256 DOI: 10.1021/acs.nanolett.0c03183  0.617
2020 Yuan J, Hatefipour M, Magill BA, Mayer W, Dartiailh MC, Sardashti K, Wickramasinghe KS, Khodaparast GA, Matsuda YH, Kohama Y, Yang Z, Thapa S, Stanton CJ, Shabani J. Experimental measurements of effective mass in near-surface InAs quantum wells Physical Review B. 101. DOI: 10.1103/Physrevb.101.205310  0.584
2019 Khazaee M, Sardashti K, Chung C, Sun J, Zhou H, Bergmann E, Dunlap-Shohl WA, Han Q, Hill IG, Jones J, Lupascu DC, Mitzi DB. Dual-source evaporation of silver bismuth iodide films for planar junction solar cells Journal of Materials Chemistry A. 7: 2095-2105. DOI: 10.1039/C8Ta08679F  0.345
2018 Kwak I, Sardashti K, Clemons MS, Ueda ST, Fruhberger B, Oktyabrsky S, Kummel AC. (Invited) HfO2/Al2O3 Nanolaminate on Si0.7Ge0.3(100) Surface by Thermal Atomic Layer Deposition Ecs Transactions. 86: 281-289. DOI: 10.1149/08607.0281ecst  0.301
2018 Khazaee M, Sardashti K, Sun J, Zhou H, Clegg C, Hill IG, Jones JL, Lupascu DC, Mitzi DB. A Versatile Thin-Film Deposition Method for Multidimensional Semiconducting Bismuth Halides Chemistry of Materials. 30: 3538-3544. DOI: 10.1021/Acs.Chemmater.8B01341  0.383
2018 Wolf S, Edmonds M, Sardashti K, Clemons M, Park JH, Yoshida N, Dong L, Nemani S, Yieh E, Holmes R, Alvarez D, Kummel AC. Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3 Applied Surface Science. 439: 689-696. DOI: 10.1016/J.Apsusc.2018.01.038  0.581
2017 Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC. Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells. Acs Applied Materials & Interfaces. PMID 28452464 DOI: 10.1021/Acsami.7B01838  0.6
2017 Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081  0.6
2017 Haight R, Gershon T, Gunawan O, Antunez P, Bishop D, Lee YS, Gokmen T, Sardashti K, Chagarov E, Kummel A. Industrial perspectives on earth abundant, multinary thin film photovoltaics Semiconductor Science and Technology. 32: 033004. DOI: 10.1088/1361-6641/Aa5C18  0.496
2017 Gershon T, Sardashti K, Lee YS, Gunawan O, Singh S, Bishop D, Kummel AC, Haight R. Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices Acta Materialia. 126: 383-388. DOI: 10.1016/J.Actamat.2017.01.003  0.593
2016 Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano. PMID 27305595 DOI: 10.1021/Acsnano.6B02648  0.563
2016 Sardashti K, Haight R, Anderson R, Contreras MA, Fruhberger B, Kummel AC. Grazing Incidence Cross-sectioning of Thin-Film Solar Cells via Cryogenic Focused Ion Beam: A case study on CIGSe. Acs Applied Materials & Interfaces. PMID 27248803 DOI: 10.1021/Acsami.6B04214  0.53
2016 Chagarov E, Sardashti K, Kummel AC, Lee YS, Haight R, Gershon TS. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics. The Journal of Chemical Physics. 144: 104704. PMID 26979701 DOI: 10.1063/1.4943270  0.548
2016 Alvarez Jr D, Spiegelman JJ, Kummel AC, Edmonds M, Sardashti K, Wolf S, Holmes R. Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas Solid State Phenomena. 255: 31-35. DOI: 10.4028/Www.Scientific.Net/Ssp.255.31  0.489
2016 Sardashti K, Paul D, Hitzman C, Hammond J, Haight R, Kummel AC. Nano-scale compositional analysis of surfaces and interfaces in earth-abundant kesterite solar cells Journal of Materials Research. 31: 3473-3481. DOI: 10.1557/Jmr.2016.389  0.519
2016 Chagarov E, Sardashti K, Haight R, Mitzi DB, Kummel AC. Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams Journal of Chemical Physics. 145. DOI: 10.1063/1.4959591  0.495
2016 Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460  0.559
2016 Sardashti K, Hu KT, Tang K, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces Applied Surface Science. 366: 455-463. DOI: 10.1016/J.Apsusc.2016.01.123  0.579
2016 Gershon T, Sardashti K, Gunawan O, Mankad R, Singh S, Lee YS, Ott JA, Kummel A, Haight R. Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2 ZnSnSe4 Absorber Advanced Energy Materials. 6: 1601182. DOI: 10.1002/Aenm.201601182  0.558
2015 Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces. Acs Applied Materials & Interfaces. 7: 26275-83. PMID 26575590 DOI: 10.1021/Acsami.5B08727  0.563
2015 Park JH, Movva HC, Chagarov E, Sardashti K, Chou H, Kwak I, Hu KT, Fullerton-Shirey SK, Choudhury P, Banerjee SK, Kummel AC. In-Situ Observation of Initial Stage in Dielectric Growth, and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces. Nano Letters. PMID 26393281 DOI: 10.1021/Acs.Nanolett.5B02429  0.571
2015 Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer. Journal of the American Chemical Society. 137: 8526-33. PMID 26070022 DOI: 10.1021/Jacs.5B03660  0.595
2015 Sardashti K, Haight R, Gokmen T, Wang W, Chang LY, Mitzi DB, Kummel AC. Impact of nanoscale elemental distribution in high-performance kesterite solar cells Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201402180  0.545
2013 Bashouti MY, Sardashti K, Ristein J, Christiansen S. Kinetic study of H-terminated silicon nanowires oxidation in very first stages. Nanoscale Research Letters. 8: 41. PMID 23336401 DOI: 10.1186/1556-276X-8-41  0.372
2013 Bashouti MY, Sardashti K, Schmitt SW, Pietsch M, Ristein J, Haick H, Christiansen SH. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology Progress in Surface Science. 88: 39-60. DOI: 10.1016/J.Progsurf.2012.12.001  0.423
2012 Bashouti MY, Sardashti K, Ristein J, Christiansen SH. Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. Physical Chemistry Chemical Physics : Pccp. 14: 11877-81. PMID 22837043 DOI: 10.1039/C2Cp41709J  0.388
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