Year |
Citation |
Score |
2016 |
Yun J, Lee M, Jeon Y, Kim M, Kim Y, Lim D, Kim S. Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates Nano Research. 1-7. DOI: 10.1007/S12274-016-1235-2 |
0.515 |
|
2016 |
Jeon Y, Lee M, Kim M, Kim Y, Kim S. Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics Nano Research. 9: 1409-1417. DOI: 10.1007/S12274-016-1036-7 |
0.459 |
|
2015 |
Lee M, Jeon Y, Kim M, Kim S. Flexible semi-around gate silicon nanowire tunnel transistors with a sub- kT/q switch Journal of Applied Physics. 117. DOI: 10.1063/1.4922354 |
0.539 |
|
2014 |
Lee M, Jeon Y, Kim S. ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application Physica Status Solidi (a). 211: 1912-1916. DOI: 10.1002/Pssa.201330499 |
0.45 |
|
2013 |
Jeon Y, Kang J, Lee M, Moon T, Kim S. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods. Journal of Nanoscience and Nanotechnology. 13: 3350-3. PMID 23858857 DOI: 10.1166/Jnn.2013.7229 |
0.529 |
|
2012 |
Lee M, Moon T, Kim S. Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications Ieee Transactions On Nanotechnology. 11: 355-359. DOI: 10.1109/Tnano.2011.2175942 |
0.463 |
|
2012 |
Jeon Y, Lee M, Moon T, Kim S. Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires Ieee Transactions On Electron Devices. 59: 2939-2942. DOI: 10.1109/Ted.2012.2211879 |
0.504 |
|
2012 |
Lee M, Jeon Y, Kim S. Analysis of electrical parameters of p-channel silicon nanowire transistors with selectively thinned channels on plastics Applied Physics Letters. 101: 93503. DOI: 10.1063/1.4747812 |
0.411 |
|
2012 |
Lee M, Jeon Y, Jung J, Koo S, Kim S. Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications Applied Physics Letters. 100: 253506. DOI: 10.1063/1.4729930 |
0.535 |
|
2012 |
Lee M, Jeon Y, Son KS, Shim JH, Kim S. Comparative performance analysis of silicon nanowire tunnel FETs and MOSFETs on plastic substrates in flexible logic circuit applications Physica Status Solidi (a). 209: 1350-1358. DOI: 10.1002/Pssa.201127767 |
0.556 |
|
2011 |
Yoon C, Moon T, Lee M, Cho G, Kim S. Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations. Nanotechnology. 22: 465202. PMID 22032860 DOI: 10.1088/0957-4484/22/46/465202 |
0.475 |
|
2011 |
Lee M, Jeon Y, Moon T, Kim S. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic. Acs Nano. 5: 2629-36. PMID 21355599 DOI: 10.1021/Nn102594D |
0.557 |
|
2011 |
Kim K, Lee M, Yun J, Kim S. A p-n Heterojunction Diode Constructed with A p-Si Nanowire and An n-ZnO Nanoparticle Thin-Film by Dielectrophoresis The Transactions of the Korean Institute of Electrical Engineers. 60: 105-108. DOI: 10.5370/Kiee.2011.60.1.105 |
0.43 |
|
2011 |
Koo J, Jeon Y, Lee M, Kim S. Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics Japanese Journal of Applied Physics. 50: 65001. DOI: 10.1143/Jjap.50.065001 |
0.424 |
|
2011 |
Kim K, Moon T, Lee M, Kang J, Jeon Y, Kim S. Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis Solid State Sciences. 13: 1735-1739. DOI: 10.1016/J.Solidstatesciences.2011.06.028 |
0.469 |
|
2010 |
Kang J, Lee M, Koo SM, Hong WS, Kim S. Single ZnO nanowire inverter logic circuits on flexible plastic substrates The Transactions of the Korean Institute of Electrical Engineers. 59: 359-362. DOI: 10.5370/Kiee.2010.59.2.359 |
0.464 |
|
2010 |
Kim K, Kang J, Lee M, Yoon C, Cho K, Kim S. Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.06Gg05 |
0.455 |
|
2010 |
Koo J, Lee M, Kang J, Yoon C, Kim K, Jeon Y, Kim S. Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions Semiconductor Science and Technology. 25: 45010. DOI: 10.1088/0268-1242/25/4/045010 |
0.334 |
|
2009 |
Lee M, Koo J, Chung EA, Jeong DY, Koo YS, Kim S. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates. Nanotechnology. 20: 455201. PMID 19822935 DOI: 10.1088/0957-4484/20/45/455201 |
0.53 |
|
2009 |
Chung EA, Koo J, Lee M, Jeong DY, Kim S. Enhancement-mode silicon nanowire field-effect transistors on plastic substrates. Small (Weinheim An Der Bergstrasse, Germany). 5: 1821-4. PMID 19408257 DOI: 10.1002/Smll.200900302 |
0.425 |
|
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