Year |
Citation |
Score |
2019 |
Chen C, Lin R, Chiang L, Pan F, Sheu J. Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection Japanese Journal of Applied Physics. 58: 027001. DOI: 10.7567/1347-4065/Aaf46B |
0.395 |
|
2017 |
Lin RZ, Cheng KY, Pan FM, Sheu JT. Selective deposition of multiple sensing materials on Si nanobelt devices through plasma-enhanced chemical vapor deposition and device-localized Joule heating. Acs Applied Materials & Interfaces. PMID 29112364 DOI: 10.1021/Acsami.7B13896 |
0.382 |
|
2017 |
Tso C, Liu T, Pan F, Sheu J. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors Japanese Journal of Applied Physics. 56: 04CD14. DOI: 10.7567/Jjap.56.04Cd14 |
0.362 |
|
2016 |
Tran NA, Pan FM, Sheu JT. Hydrogen gas sensors from polysilicon nanobelt devices selectively modified with sensing materials. Nanotechnology. 27: 505604. PMID 27869644 DOI: 10.1088/0957-4484/27/50/505604 |
0.328 |
|
2016 |
Sang CH, Chou SJ, Pan FM, Sheu JT. Fluorescence enhancement and multiple protein detection in ZnO nanostructure microfluidic devices. Biosensors & Bioelectronics. 75: 285-92. PMID 26322591 DOI: 10.1016/J.Bios.2015.08.050 |
0.327 |
|
2015 |
Tso C, Liu T, Sheu J. Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels Japanese Journal of Applied Physics. 54: 06FG06. DOI: 10.7567/Jjap.54.06Fg06 |
0.391 |
|
2015 |
Liu T, Pan F, Sheu J. Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates Ieee Journal of the Electron Devices Society. 3: 405-409. DOI: 10.1109/Jeds.2015.2441736 |
0.389 |
|
2014 |
Lai CY, Chien TC, Lin TY, Ke T, Hsu SH, Lee YJ, Su CY, Sheu JT, Yeh PH. Intensify the application of ZnO-based nanodevices in humid environment: O2/H2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowires. Nanoscale Research Letters. 9: 281. PMID 24948898 DOI: 10.1186/1556-276X-9-281 |
0.301 |
|
2014 |
Liu HH, Lin TH, Sheu J. Enhancement of detection by selective modification of silicon nanobelt field-effect transistors via localized Joule heating Sensors and Actuators B: Chemical. 192: 111-116. DOI: 10.1016/J.Snb.2013.10.102 |
0.334 |
|
2013 |
Liu HH, Lin TH, Sheu JT. Self-assembled monolayer-based selective modification on polysilicon nanobelt devices. Acs Applied Materials & Interfaces. 5: 10048-53. PMID 24025498 DOI: 10.1021/Am402586Q |
0.33 |
|
2013 |
Liu T, Lo S, Sheu J. Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope Ieee Electron Device Letters. 34: 523-525. DOI: 10.1109/Led.2013.2247737 |
0.363 |
|
2012 |
Huang PC, Chen LA, Chen CC, Sheu JT. Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH 3 plasma treatment Microelectronic Engineering. 91: 54-58. DOI: 10.1016/J.Mee.2011.10.009 |
0.366 |
|
2011 |
Chen CC, Lin YS, Sang CH, Sheu JT. Localized joule heating as a mask-free technique for the local synthesis of ZnO nanowires on silicon nanodevices. Nano Letters. 11: 4736-41. PMID 22007768 DOI: 10.1021/Nl202539M |
0.357 |
|
2011 |
Lin TH, Lin CW, Liu HH, Sheu JT, Hung WH. Potential-controlled electrodeposition of gold dendrites in the presence of cysteine. Chemical Communications (Cambridge, England). 47: 2044-6. PMID 21210050 DOI: 10.1039/c0cc03273e |
0.53 |
|
2010 |
Huang PC, Chen LA, Sheu JT. Electric-field enhancement of a gate-all-around nanowire thin-film transistor memory Ieee Electron Device Letters. 31: 216-218. DOI: 10.1109/Led.2009.2038177 |
0.388 |
|
2009 |
Huang CJ, Pan F, Tzeng TC, Li-Chang, Sheu J. Growth and Field Emission of Reactive Sputtered Pd–PdO Core–Shell Nanoflakes on Platinum Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3035822 |
0.335 |
|
2009 |
Wu C, Lee T, Sheu J, Chao T. Novel Field-Induced Gray-Level Selective Patterning of Self-Assembled Aminosilane Monolayer on SiO2Surfaces by Scanning Probe Bond-Breaking Lithography Japanese Journal of Applied Physics. 48: 04C133. DOI: 10.1143/Jjap.48.04C133 |
0.371 |
|
2009 |
Sheu JT, Huang PC, Sheu TS, Chen CC, Chen LA. Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors Ieee Electron Device Letters. 30: 139-141. DOI: 10.1109/Led.2008.2009956 |
0.399 |
|
2009 |
Chiu M, Chen C, Sheu J, Wei K. An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene) Organic Electronics. 10: 769-774. DOI: 10.1016/J.Orgel.2009.03.011 |
0.366 |
|
2008 |
Chen TM, Hung JY, Pan FM, Chang L, Sheu JT, Wu SC. Fabrication and field-emission characteristics of TiN nanorods with a concave top surface Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2835199 |
0.354 |
|
2008 |
Huang C, Liu Y, Chen C, Wei K, Sheu J. Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film Applied Physics Letters. 93: 203303. DOI: 10.1063/1.3028336 |
0.358 |
|
2008 |
Chen C, Chiu M, Sheu J, Wei K. Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots Applied Physics Letters. 92: 143105. DOI: 10.1063/1.2899997 |
0.329 |
|
2007 |
Wu C, Sheu J, Chen CH, Chao T. Scanning Probe Lithography of Self-AssembledN-(2-Aminoethyl)-3-aminopropyltrimethoxysilane Monolayers on SiO2Surface Japanese Journal of Applied Physics. 46: 6272-6276. DOI: 10.1143/Jjap.46.6272 |
0.355 |
|
2007 |
Li C, Wu C, Wei K, Sheu J, Huang J, Jeng U, Liang K. The Effect of Nanoscale Confinement on the Collective Electron Transport Behavior in Au Nanoparticles Self-Assembled in a Nanostructured Polystyrene-block
-poly(4-vinylpyridine) Diblock Copolymer Ultra-thin Film Advanced Functional Materials. 17: 2283-2290. DOI: 10.1002/Adfm.200600637 |
0.332 |
|
2006 |
Sheu J, Wu C, Chao T. Selective Deposition of Gold Particles on Dip-Pen Nanolithography Patterns on Silicon Dioxide Surfaces Japanese Journal of Applied Physics. 45: 3693-3697. DOI: 10.1143/Jjap.45.3693 |
0.366 |
|
2005 |
Sheu J, Wu C, Chao T. Selective deposition of gold particles on DPN patterns on silicon dioxide surface The Japan Society of Applied Physics. 2005: 786-787. DOI: 10.7567/Ssdm.2005.P9-6 |
0.313 |
|
2004 |
Sheu JT, Chen CC, You KS, Tsai ST. Nanoflash device with self-aligned double floating gates using scanning probe lithography and tetramethylammonium hydroxide wet etching Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 3154. DOI: 10.1116/1.1826060 |
0.411 |
|
1999 |
Huang B, Sheu J, Wu C. Bilayer SiNX/Diamond Films for X-Ray Lithography Mask Japanese Journal of Applied Physics. 38: 6530-6534. DOI: 10.1143/Jjap.38.6530 |
0.308 |
|
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