| Year |
Citation |
Score |
| 2020 |
Dorp DHv, Vanheusden G, Paulussen K, Hassan I, Wonterghem SV, Abrenica GH, Dara P, Meersschaut J, Conard T, Holsteyns F, Kelly JJ. Photoanodic oxidation of InP in acid solution and its surface chemistry: on the interplay of photons, protons and hydrodynamics Electrochimica Acta. 360: 136872. DOI: 10.1016/J.Electacta.2020.136872 |
0.356 |
|
| 2019 |
Dorp DHv, Arnauts S, Laitinen M, Sajavaara T, Meersschaut J, Conard T, Kelly JJ. Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry Applied Surface Science. 465: 596-606. DOI: 10.1016/J.Apsusc.2018.09.181 |
0.363 |
|
| 2018 |
Dorp DHv, Arnauts S, Laitinen M, Sajavaara T, Meersschaut J, Conard T, Holsteyns F, Kelly J. Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry Solid State Phenomena. 282: 48-51. DOI: 10.4028/Www.Scientific.Net/Ssp.282.48 |
0.329 |
|
| 2016 |
Philipsen HGG, Ozanam F, Allongue P, Kelly JJ, Chazalviel J. Oxide Formation and Dissolution on Silicon in KOH Electrolyte: An In-Situ Infrared Study Journal of the Electrochemical Society. 163: H327-H338. DOI: 10.1149/2.0911605Jes |
0.338 |
|
| 2016 |
Philipsen HGG, Ozanam F, Allongue P, Kelly JJ, Chazalviel JN. In-situ infrared study of silicon in KOH electrolyte: Surface hydrogenation and hydrogen penetration Surface Science. 644: 180-190. DOI: 10.1016/J.Susc.2015.10.040 |
0.356 |
|
| 2015 |
Weyher JL, Van Dorp DH, Kelly JJ. Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing Journal of Crystal Growth. 430: 21-27. DOI: 10.1016/J.Jcrysgro.2015.08.003 |
0.335 |
|
| 2014 |
Van Dorp DH, Arnauts S, Cuypers D, Rip J, Holsteyns F, De Gendt S, Kelly JJ. Nanoscale etching of In0.53Ga0.47As in H 2O2/HCl solutions for advanced CMOS processing Ecs Journal of Solid State Science and Technology. 3. DOI: 10.1149/2.021405Jss |
0.322 |
|
| 2013 |
Smeenk NJ, Engel J, Mulder P, Bauhuis GJ, Bissels GMMW, Schermer JJ, Vlieg E, Kelly JJ. Arsenic formation on GaAs during etching in HF solutions: Relevance for the epitaxial lift-off process Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.006303Jss |
0.346 |
|
| 2010 |
Weyher JL, Tichelaar FD, Van Dorp DH, Kelly JJ, Khachapuridze A. The K2S2O8KOH photoetching system for GaN Journal of Crystal Growth. 312: 2607-2610. DOI: 10.1016/J.Jcrysgro.2010.04.020 |
0.346 |
|
| 2009 |
Van Dorp DH, Weyher JL, Kooijman MR, Kelly JJ. Photoetching mechanisms of GaN in alkaline S2O8 2- solution Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3183807 |
0.37 |
|
| 2009 |
Van Dorp DH, Den Otter JH, Hijnen N, Bergmeijer M, Kelly JJ. Influence of electrochemical etching on electroluminescence from n-type 4H - And 6H-SiC Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3115404 |
0.317 |
|
| 2009 |
Van Dorp DH, Kooij ES, Arnoldbik WM, Kelly JJ. Electrochemical growth of micrometer-Thick oxide on SiC in acidic fluoride solution Chemistry of Materials. 21: 3297-3305. DOI: 10.1021/Cm900374S |
0.365 |
|
| 2009 |
van Dorp DH, Sattler JJHB, den Otter JH, Kelly JJ. Electrochemistry of anodic etching of 4H and 6H-SiC in fluoride solution of pH 3 Electrochimica Acta. 54: 6269-6275. DOI: 10.1016/J.Electacta.2009.05.086 |
0.353 |
|
| 2009 |
Philipsen HGG, Kelly JJ. Influence of chemical additives on the surface reactivity of Si in KOH solution Electrochimica Acta. 54: 3526-3531. DOI: 10.1016/J.Electacta.2008.12.044 |
0.368 |
|
| 2008 |
Van Niftrik ATJ, Schermer JJ, Bauhuis GJ, Mulder P, Larsen PK, Van Setten MJ, Attema JJ, Tan NCG, Kelly JJ. HF species and dissolved oxygen on the epitaxial lift-off process of GaAs Using AlAsP release layers Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2799737 |
0.314 |
|
| 2007 |
Dorp DHv, Weyher JL, Kelly JJ. Anodic etching of SiC in alkaline solutions Journal of Micromechanics and Microengineering. 17: 50-55. DOI: 10.1088/0960-1317/17/4/S04 |
0.392 |
|
| 2007 |
Dorp DHv, Kelly JJ. Photoelectrochemistry of 4H-SiC in KOH solutions Journal of Electroanalytical Chemistry. 599: 260-266. DOI: 10.1016/J.Jelechem.2006.03.002 |
0.341 |
|
| 2007 |
Lewandowska R, Weyher JL, Kelly JJ, Konczewicz L, Lucznik B. The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy Journal of Crystal Growth. 307: 298-301. DOI: 10.1016/J.Jcrysgro.2007.07.019 |
0.302 |
|
| 2007 |
Vanmaekelbergh D, Houtepen AJ, Kelly JJ. Electrochemical gating: A method to tune and monitor the (opto)electronic properties of functional materials Electrochimica Acta. 53: 1140-1149. DOI: 10.1016/J.Electacta.2007.02.045 |
0.315 |
|
| 2006 |
Philipsen HGG, Smeenk NJ, Ligthart H, Kelly JJ. Exploiting anisotropy for in situ measurement of silicon etch rates in KOH solution Electrochemical and Solid-State Letters. 9: C118-C121. DOI: 10.1149/1.2203237 |
0.317 |
|
| 2006 |
Haiss W, Raisch P, Bitsch L, Nichols RJ, Xia X, Kelly JJ, Schiffrin DJ. Surface termination and hydrogen bubble adhesion on Si(1 0 0) surfaces during anisotropic dissolution in aqueous KOH Journal of Electroanalytical Chemistry. 597: 1-12. DOI: 10.1016/J.Jelechem.2006.07.027 |
0.31 |
|
| 2005 |
Philipsen HG, Kelly JJ. Anisotropy in the anodic oxidation of silicon in KOH solution. The Journal of Physical Chemistry. B. 109: 17245-53. PMID 16853201 DOI: 10.1021/Jp052595W |
0.4 |
|
| 2005 |
Macht L, Kelly J, Weyher J, Grzegorczyk A, Larsen P. An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology Journal of Crystal Growth. 273: 347-356. DOI: 10.1016/J.Jcrysgro.2004.09.029 |
0.378 |
|
| 2005 |
Kelly JJ, Philipsen HGG. Anisotropy in the wet-etching of semiconductors Current Opinion in Solid State and Materials Science. 9: 84-90. DOI: 10.1016/J.Cossms.2006.04.003 |
0.382 |
|
| 2004 |
Kretschmer H-, Xia XH, Kelly JJ, Steckenborn A. Anisotropic Etching of Three-Dimensional Shapes in Silicon The Important Role of Galvanic Interaction Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1790512 |
0.337 |
|
| 2004 |
Voncken MMAJ, Schermer JJ, Niftrik ATJv, Bauhuis GJ, Mulder P, Larsen PK, Peters TPJ, Bruin Bd, Klaassen A, Kelly JJ. Etching AlAs with HF for Epitaxial Lift-Off Applications Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1690293 |
0.324 |
|
| 2004 |
Connolly EJ, French PJ, Xia XH, Kelly JJ. Galvanic etch stop for Si in KOH Journal of Micromechanics and Microengineering. 14: 1215-1219. DOI: 10.1088/0960-1317/14/8/014 |
0.333 |
|
| 2004 |
Lagemaat Jvd, Vanmaekelbergh DAM, Kelly JJ. Field-dependent charge carrier dynamics in GaN: Excitonic effects Applied Physics Letters. 85: 958-960. DOI: 10.1063/1.1779349 |
0.319 |
|
| 2003 |
Roest AL, Germeau A, Kelly JJ, Vanmaekelbergh D, Allan G, Meulenkamp EA. Long-range transport in an assembly of ZnO quantum dots: the effects of quantum confinement, Coulomb repulsion and structural disorder. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 4: 959-66. PMID 14562441 DOI: 10.1002/Cphc.200300696 |
0.308 |
|
| 2003 |
Tijburg RP, Ligthart JGM, Kuiken HK, Kelly JJ. Centrifugal Etching An Experimental Study Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1573199 |
0.309 |
|
| 2003 |
Driel AFv, Bret BPJ, Vanmaekelbergh DAM, Kelly JJ. Hot carrier luminescence during porous etching of GaP under high electric field conditions Surface Science. 529: 197-203. DOI: 10.1016/S0039-6028(03)00262-0 |
0.317 |
|
| 2002 |
Tjerkstra RW, Gómez Rivas J, Vanmaekelbergh D, Kelly JJ. Porous GaP Multilayers Formed by Electrochemical Etching Electrochemical and Solid-State Letters. 5: G32. DOI: 10.1149/1.1466935 |
0.329 |
|
| 2002 |
Reincke F, Hickey SG, Kelly JJ, Braam TW, Jenneskens LW, Vanmaekelbergh D. Electrochemical and topological characterization of gold(111) | oligo(cyclohexylidene) | gold nanocrystal interfaces Journal of Electroanalytical Chemistry. 522: 2-10. DOI: 10.1016/S0022-0728(01)00712-4 |
0.318 |
|
| 2001 |
Di Vece M, Van Der Sluis P, Janner AM, Kelly JJ. A Photoelectrochemical Study of the GdMg Hydride Switchable Mirror Journal of the Electrochemical Society. 148: G576-G580. DOI: 10.1149/1.1401081 |
0.323 |
|
| 2001 |
Xia XH, Kelly JJ. Electrochemistry of Hypochlorite at Silicon in Alkaline Etchantsm: Applications in Device Fabrication Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1359203 |
0.394 |
|
| 2001 |
Kelly JJ, Xia XH, Ashruf CMA, French PJ. Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication Ieee Sensors Journal. 1: 127-142. DOI: 10.1109/Jsen.2001.936930 |
0.336 |
|
| 2001 |
Nowak G, Xia XH, Kelly JJ, Weyher JL, Porowski S. Electrochemical etching of highly conductive GaN single crystals Journal of Crystal Growth. 222: 735-740. DOI: 10.1016/S0022-0248(00)00988-X |
0.36 |
|
| 2001 |
Suyver J, Bakker R, Meijerink A, Kelly J. Photoelectrochemical Characterization of Nanocrystalline ZnS:Mn2+ Layers Physica Status Solidi (B). 224: 307-312. DOI: 10.1002/1521-3951(200103)224:1<307::Aid-Pssb307>3.0.Co;2-# |
0.35 |
|
| 2000 |
Ashruf CMA, French PJ, Sarro PM, Kazinczi R, Xia XH, Kelly JJ. Galvanic etching for sensor fabrication Journal of Micromechanics and Microengineering. 10: 505-515. DOI: 10.1088/0960-1317/10/4/304 |
0.304 |
|
| 2000 |
Jongh PEd, Meulenkamp EA, Vanmaekelbergh aD, Kelly JJ. Charge Carrier Dynamics in Illuminated, Particulate ZnO Electrodes Journal of Physical Chemistry B. 104: 7686-7693. DOI: 10.1021/Jp000616A |
0.333 |
|
| 2000 |
Xia XH, Ashruf CMA, French PJ, Kelly JJ. Galvanic Cell Formation in Silicon/Metal Contacts: The Effect on Silicon Surface Morphology Chemistry of Materials. 12: 1671-1678. DOI: 10.1021/Cm9912066 |
0.36 |
|
| 2000 |
Bakkers EE, Kelly J, Vanmaekelbergh DA. Time resolved photoelectrochemistry with size-quantized PbS adsorbed on gold Journal of Electroanalytical Chemistry. 482: 48-55. DOI: 10.1016/S0022-0728(00)00016-4 |
0.318 |
|
| 2000 |
Xia X, Kelly J. The influence of oxidizing agents on etching and passivation of silicon in KOH solution Electrochimica Acta. 45: 4645-4653. DOI: 10.1016/S0013-4686(00)00616-2 |
0.366 |
|
| 1999 |
Kooij ES, Butter K, Kelly JJ. Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction Electrochemical and Solid State Letters. 2: 178-180. DOI: 10.1149/1.1390775 |
0.377 |
|
| 1999 |
Kelly JJ, Kooij ES, Vanmaekelbergh D. Generation and Quenching of Luminescence in n-Type Porous Silicon/Solution Diodes: Role of Adsorbed Hydrogen Langmuir. 15: 3666-3671. DOI: 10.1021/La981435R |
0.337 |
|
| 1999 |
Jongh PEd, Vanmaekelbergh aD, Kelly JJ. Cu2O: Electrodeposition and Characterization Chemistry of Materials. 11: 3512-3517. DOI: 10.1021/Cm991054E |
0.351 |
|
| 1999 |
Ashruf C, French P, Bressers P, Kelly J. Galvanic porous silicon formation without external contacts Sensors and Actuators a: Physical. 74: 118-122. DOI: 10.1016/S0924-4247(98)00340-9 |
0.374 |
|
| 1999 |
van de Lagemaat J, Vanmaekelbergh D, Kelly J. Electrochemistry of homoepitaxial CVD diamond: energetics and electrode kinetics in aqueous electrolytes Journal of Electroanalytical Chemistry. 475: 139-151. DOI: 10.1016/S0022-0728(99)00344-7 |
0.374 |
|
| 1999 |
Kelly JJ, Kooij ES, Meulenkamp EA. Luminescence studies of semiconductor electrodes Electrochimica Acta. 45: 561-574. DOI: 10.1016/S0013-4686(99)00234-0 |
0.35 |
|
| 1998 |
Kooij ES, Butter K, Kelly JJ. Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon Journal of the Electrochemical Society. 145: 1232-1238. DOI: 10.1149/1.1838444 |
0.378 |
|
| 1998 |
Ashruf CMA, French PJ, Sarro PM, Kelly JJ. Galvanic etching of silicon Proceedings of Spie. 3511: 82-87. DOI: 10.1117/12.324329 |
0.349 |
|
| 1998 |
Ashruf C, French P, Bressers P, Sarro P, Kelly J. A new contactless electrochemical etch-stop based on a gold/silicon/TMAH galvanic cell Sensors and Actuators a: Physical. 66: 284-291. DOI: 10.1016/S0924-4247(97)01711-1 |
0.32 |
|
| 1998 |
Kelly J, Vanmaekelbergh D. Charge carrier dynamics in nanoporous photoelectrodes Electrochimica Acta. 43: 2773-2780. DOI: 10.1016/S0013-4686(98)00018-8 |
0.31 |
|
| 1997 |
Kooij ES, Hamoumi M, Kelly JJ, Schropp REI. Photoselective Metal Deposition on Amorphous Silicon p‐i‐n Solar Cells Journal of the Electrochemical Society. 144. DOI: 10.1149/1.1838005 |
0.316 |
|
| 1997 |
Schoenmakers GH, Bakkers EPAM, Kelly JJ. Electroless Etching of ZnSe in Aqueous Ferricyanide Solutions: An Electrochemical Study Journal of the Electrochemical Society. 144: 2329-2333. DOI: 10.1149/1.1837813 |
0.371 |
|
| 1997 |
Kooij ES, Rama AR, Kelly JJ. Infrared induced visible emission from porous silicon: the mechanism of anodic oxidation Surface Science. 370: 125-135. DOI: 10.1016/S0039-6028(96)00960-0 |
0.385 |
|
| 1996 |
Bressers PMMC, Kelly JJ, Gardeniers JGE, Elwenspoek MC. Surface Morphology of p‐Type (100) Silicon Etched in Aqueous Alkaline Solution Journal of the Electrochemical Society. 143: 1744-1750. DOI: 10.1149/1.1836710 |
0.375 |
|
| 1996 |
Erné BH, Vanmaekelbergh D, Kelly JJ. Morphology and Strongly Enhanced Photoresponse of GaP Electrodes Made Porous by Anodic Etching Journal of the Electrochemical Society. 143: 305-314. DOI: 10.1149/1.1836428 |
0.377 |
|
| 1996 |
Lagemaat Jvd, Plakman M, Vanmaekelbergh D, Kelly JJ. Enhancement of the light‐to‐current conversion efficiency in an n‐SiC/solution diode by porous etching Applied Physics Letters. 69: 2246-2248. DOI: 10.1063/1.117142 |
0.384 |
|
| 1996 |
Kooij ES, Noordhoek SM, Kelly JJ. Reduction Of Peroxodisulfate At Porous And Crystalline Silicon Electrodes : An Anomaly The Journal of Physical Chemistry. 100: 10754-10758. DOI: 10.1021/Jp960760P |
0.386 |
|
| 1996 |
Kooij ES, Despo RW, Mulders FPJ, Kelly JJ. Electrochemistry of porous and crystalline silicon electrodes in methylviologen solutions Journal of Electroanalytical Chemistry. 406: 139-146. DOI: 10.1016/0022-0728(96)04423-3 |
0.399 |
|
| 1996 |
Bressers P, Plakman M, Kelly J. Etching and electrochemistry of silicon in acidic bromine solutions Journal of Electroanalytical Chemistry. 406: 131-137. DOI: 10.1016/0022-0728(95)04424-8 |
0.384 |
|
| 1995 |
Kooij ES, Despo RW, Kelly JJ. Electroluminescence from porous silicon due to electron injection from solution Applied Physics Letters. 66: 2552-2554. DOI: 10.1063/1.113164 |
0.364 |
|
| 1995 |
Bressers PMMC, Pagano SASP, Kelly JJ. Ferricyanide reduction as a probe for the surface chemistry of silicon in aqueous alkaline solutions Journal of Electroanalytical Chemistry. 391: 159-168. DOI: 10.1016/0022-0728(95)03908-Y |
0.387 |
|
| 1995 |
Erné BH, Vanmaekelbergh D, Kelly JJ. Porous etching: A means to enhance the photoresponse of indirect semiconductors Advanced Materials. 7: 739-742. DOI: 10.1002/Adma.19950070813 |
0.311 |
|
| 1994 |
Meulenkamp EA, Cleij TJ, Kelly JJ. Electroluminescence and Chemiluminescence of Porous Silicon in Nonaqueous Solution Journal of the Electrochemical Society. 141: 1157-1161. DOI: 10.1149/1.2054889 |
0.341 |
|
| 1994 |
Boonekamp EP, Kelly JJ, van de Ven J, Sondag AHM. The chemical oxidation of hydrogen‐terminated silicon (111) surfaces in water studiedin situwith Fourier transform infrared spectroscopy Journal of Applied Physics. 75: 8121-8127. DOI: 10.1063/1.356510 |
0.303 |
|
| 1994 |
de Wit A, Kelly J. Surface reactions at p-type and n-type ZnSe in aqueous solutions Journal of Electroanalytical Chemistry. 366: 163-170. DOI: 10.1016/0022-0728(93)03097-9 |
0.379 |
|
| 1994 |
Weyher J, Fornari R, Görög T, Kelly J, Erné B. HBr-K2Cr2O7-H2O etching system for indium phosphide Journal of Crystal Growth. 141: 57-67. DOI: 10.1016/0022-0248(94)90092-2 |
0.334 |
|
| 1993 |
Oskam G, Bart L, Vanmaekelbergh D, Kelly JJ. The electrical and electrochemical properties of gold‐plated InP Journal of Applied Physics. 74: 3238-3245. DOI: 10.1063/1.354598 |
0.327 |
|
| 1993 |
Meulenkamp E, Bressers P, Kelly J. Visible chemiluminescence and electroluminescence of porous silicon Applied Surface Science. 64: 283-295. DOI: 10.1016/0169-4332(93)90199-L |
0.355 |
|
| 1993 |
Meulenkamp EA, Kelly JJ. Anodic electroluminescence of p-InP Journal of Electroanalytical Chemistry. 345: 183-189. DOI: 10.1016/0022-0728(93)80478-Z |
0.308 |
|
| 1993 |
Boonekamp E, Kelly J, van der Ven J, Sondag A. In-situ Fourier transform infrared spectroscopy of electrochemical processes at the silicon—acetonitrile interface Journal of Electroanalytical Chemistry. 344: 187-198. DOI: 10.1016/0022-0728(93)80055-M |
0.335 |
|
| 1993 |
Oskam G, Vanmaekelbergh D, Kelly JJ. The influence of electrodeposited gold on the properties of III–V semiconductor electrodes—part 2. A study of the impedance due to gold-related surface states at p-GaAs electrodes Electrochimica Acta. 38: 301-306. DOI: 10.1016/0013-4686(93)85143-M |
0.369 |
|
| 1993 |
Oskam G, Vanmaekelbergh D, Kelly JJ. The influence of electrodeposited gold on the properties of III–V semiconductor electrodes—Part 1. Results of current—potential measurements on p-GaAs Electrochimica Acta. 38: 291-300. DOI: 10.1016/0013-4686(93)85142-L |
0.354 |
|
| 1993 |
Oskam G, Vanmaekelbergh D, Kelly JJ. The influence of electrodeposited gold on the properties of III–V semiconductor electrodes—part 3. Results on n-GaAs provided with thick gold l Electrochimica Acta. 38: 1115-1121. DOI: 10.1016/0013-4686(93)80221-K |
0.374 |
|
| 1992 |
Bressers PMMC, Knapen JWJ, Meulenkamp EA, Kelly JJ. Visible light emission from a porous silicon/solution diode Applied Physics Letters. 61: 108-110. DOI: 10.1063/1.108470 |
0.352 |
|
| 1992 |
Kelly J, Minks B, Verhaegh N, Stumper J, Peter L. Photocurrent multiplication at p-type semiconductor electrodes Electrochimica Acta. 37: 909-918. DOI: 10.1016/0013-4686(92)85042-J |
0.33 |
|
| 1991 |
Oskam G, Vanmaekelbergh D, Kelly J. A reappraisal of the frequency dependence of the impedance of semiconductor electrodes Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 315: 65-85. DOI: 10.1016/0022-0728(91)80060-4 |
0.33 |
|
| 1991 |
Minks BP, Wiegel M, Kelly JJ. Electrochemical and chemical reactions of hypobromite at GaAs electrodes Electrochimica Acta. 36: 695-701. DOI: 10.1016/0013-4686(91)85160-9 |
0.314 |
|
| 1989 |
Minks B, Vanmaekelbergh D, Kelly J. Current-doubling, chemical etching and the mechanism of two-electron reduction reactions at GaAs Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 273: 133-145. DOI: 10.1016/0022-0728(89)87008-1 |
0.381 |
|
| 1989 |
Minks B, Oskam G, Vanmaekelbergh D, Kelly J. Current-doubling, chemical etching and the mechanism of two-electron reduction reactions at GaAs Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 273: 119-131. DOI: 10.1016/0022-0728(89)87007-X |
0.359 |
|
| 1989 |
Vanmaekelbergh D, Hoogendam CW, Kelly JJ. Thermal electron excitation as a probe for chemical and electrochemical steps in the anodic dissolution of III–V semiconductor electrodes Journal of Electroanalytical Chemistry. 270: 175-189. DOI: 10.1016/0022-0728(89)85035-1 |
0.331 |
|
| 1986 |
Ven Jvd, Weyher JL, Meerakker JEAMvd, Kelly JJ. Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions Journal of the Electrochemical Society. 133: 799-806. DOI: 10.1149/1.2108680 |
0.329 |
|
| 1986 |
Ven JVD, Weyher JL, Meerakker JEAMVD, Kelly JJ. Kinetics and Morphology of GaAs Etching in Aqueous CrO3- HF Solutions. Cheminform. 17. DOI: 10.1002/Chin.198633004 |
0.328 |
|
| 1985 |
Ven Jvd, Meerakker JEAMvd, Kelly JJ. The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions I . Experimental Results Journal of the Electrochemical Society. 132: 3020-3026. DOI: 10.1149/1.2113715 |
0.314 |
|
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