Martin Wojtowicz - Publications

Affiliations: 
University of Toronto, Toronto, ON, Canada 

123 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Mosa AJ, Wang S, Tan YF, Wojtowicz JM. Organotypic slice cultures for studies of postnatal neurogenesis. Journal of Visualized Experiments : Jove. PMID 25867138 DOI: 10.3791/52353  0.88
2015 Winocur G, Wojtowicz JM, Tannock IF. Memory loss in chemotherapy-treated rats is exacerbated in high-interference conditions and related to suppression of hippocampal neurogenesis. Behavioural Brain Research. 281: 239-44. PMID 25529185 DOI: 10.1016/j.bbr.2014.12.028  0.88
2015 Din S, Wojtowicz M, Siddiqui M. High power and high efficiency Ka band power amplifier 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7166776  0.6
2014 Wojtowicz MA, Ishigami Y, Mazerolle EL, Fisk JD. Stability of intraindividual variability as a marker of neurologic dysfunction in relapsing remitting multiple sclerosis. Journal of Clinical and Experimental Neuropsychology. 36: 455-63. PMID 24742170 DOI: 10.1080/13803395.2014.903898  0.48
2014 Wojtowicz M, Mazerolle EL, Bhan V, Fisk JD. Altered functional connectivity and performance variability in relapsing-remitting multiple sclerosis. Multiple Sclerosis (Houndmills, Basingstoke, England). 20: 1453-63. PMID 24619937 DOI: 10.1177/1352458514524997  0.48
2014 Amtul Z, Nikolova S, Gao L, Keeley RJ, Bechberger JF, Fisher AL, Bartha R, Munoz DG, McDonald RJ, Naus CC, Wojtowicz JM, Hachinski V, Cechetto DF. Comorbid Aβ toxicity and stroke: hippocampal atrophy, pathology, and cognitive deficit. Neurobiology of Aging. 35: 1605-14. PMID 24491422 DOI: 10.1016/j.neurobiolaging.2014.01.005  0.88
2014 Berrigan LI, Fisk JD, Walker LA, Wojtowicz M, Rees LM, Freedman MS, Marrie RA. Reliability of regression-based normative data for the oral symbol digit modalities test: an evaluation of demographic influences, construct validity, and impairment classification rates in multiple sclerosis samples. The Clinical Neuropsychologist. 28: 281-99. PMID 24438521 DOI: 10.1080/13854046.2013.871337  0.48
2014 Winocur G, Wojtowicz JM, Huang J, Tannock IF. Physical exercise prevents suppression of hippocampal neurogenesis and reduces cognitive impairment in chemotherapy-treated rats. Psychopharmacology. 231: 2311-20. PMID 24343419 DOI: 10.1007/s00213-013-3394-0  0.88
2013 Mazerolle EL, Wojtowicz MA, Omisade A, Fisk JD. Intra-individual variability in information processing speed reflects white matter microstructure in multiple sclerosis. Neuroimage. Clinical. 2: 894-902. PMID 24179840 DOI: 10.1016/j.nicl.2013.06.012  0.48
2013 Wojtowicz M, Day V, McGrath PJ. Predictors of participant retention in a guided online self-help program for university students: prospective cohort study. Journal of Medical Internet Research. 15: e96. PMID 23697614 DOI: 10.2196/jmir.2323  0.48
2013 Whissell PD, Rosenzweig S, Lecker I, Wang DS, Wojtowicz JM, Orser BA. γ-aminobutyric acid type A receptors that contain the δ subunit promote memory and neurogenesis in the dentate gyrus. Annals of Neurology. 74: 611-21. PMID 23686887 DOI: 10.1002/ana.23941  0.88
2013 Déry N, Pilgrim M, Gibala M, Gillen J, Wojtowicz JM, Macqueen G, Becker S. Adult hippocampal neurogenesis reduces memory interference in humans: opposing effects of aerobic exercise and depression. Frontiers in Neuroscience. 7: 66. PMID 23641193 DOI: 10.3389/fnins.2013.00066  0.88
2013 Day V, McGrath PJ, Wojtowicz M. Internet-based guided self-help for university students with anxiety, depression and stress: a randomized controlled clinical trial. Behaviour Research and Therapy. 51: 344-51. PMID 23639300 DOI: 10.1016/j.brat.2013.03.003  0.48
2013 Ishigami Y, Fisk JD, Wojtowicz M, Klein RM. Repeated measurement of the attention components of patients with multiple sclerosis using the Attention Network Test-Interaction (ANT-I): stability, isolability, robustness, and reliability. Journal of Neuroscience Methods. 216: 1-9. PMID 23473799 DOI: 10.1016/j.jneumeth.2013.02.013  0.48
2013 Wojtowicz M, Omisade A, Fisk JD. Indices of cognitive dysfunction in relapsing-remitting multiple sclerosis: intra-individual variability, processing speed, and attention network efficiency. Journal of the International Neuropsychological Society : Jins. 19: 551-8. PMID 23425598 DOI: 10.1017/S1355617713000027  0.48
2013 Poust B, Gambin V, Sandhu R, Smorchkova I, Lewis G, Elmadjian R, Li D, Geiger C, Heying B, Wojtowicz M, Oki A, Pate BB, Feygelson T, Hobart K. Selective growth of diamond in thermal vias for GaN HEMTs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659244  0.6
2013 Sandhu R, Gambin V, Poust B, Smorchkova I, Lewis G, Elmadjian R, Li D, Geiger C, Heying B, Wojtowicz M, Oki A, Feygelson T, Hobart K, Pate B, Tabeling J, et al. GaN HEMT near junction heat removal 2013 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2013. 175-178.  0.6
2012 Wojtowicz M, Berrigan LI, Fisk JD. Intra-individual Variability as a Measure of Information Processing Difficulties in Multiple Sclerosis. International Journal of Ms Care. 14: 77-83. PMID 24453737 DOI: 10.7224/1537-2073-14.2.77  0.48
2012 Winocur G, Henkelman M, Wojtowicz JM, Zhang H, Binns MA, Tannock IF. The effects of chemotherapy on cognitive function in a mouse model: a prospective study. Clinical Cancer Research : An Official Journal of the American Association For Cancer Research. 18: 3112-21. PMID 22467680 DOI: 10.1158/1078-0432.CCR-12-0060  0.88
2012 Winocur G, Becker S, Luu P, Rosenzweig S, Wojtowicz JM. Adult hippocampal neurogenesis and memory interference. Behavioural Brain Research. 227: 464-9. PMID 21669236 DOI: 10.1016/j.bbr.2011.05.032  0.88
2012 Oki A, Wojtowicz M, Heying B, Smorchkova I, Luo B, Siddiqui M. GaN technology for millimeter wave power amplifiers Ecs Transactions. 50: 307-311. DOI: 10.1149/05003.0307ecst  0.6
2012 Sandhu R, Gambin V, Poust B, Smorchkova I, Lewis G, Elmadjian R, Li D, Geiger C, Heying B, Wojtowicz M, Oki A, Feygelson T, Hobart K, Bozorg-Grayeli E, Goodson K. Diamond materials for GaN HEMT near junction heat removal Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340119  0.6
2011 Rosenzweig S, Wojtowicz JM. Analyzing dendritic growth in a population of immature neurons in the adult dentate gyrus using laminar quantification of disjointed dendrites. Frontiers in Neuroscience. 5: 34. PMID 21442026 DOI: 10.3389/fnins.2011.00034  0.88
2011 Snyder JS, Ramchand P, Rabbett S, Radik R, Wojtowicz JM, Cameron HA. Septo-temporal gradients of neurogenesis and activity in 13-month-old rats. Neurobiology of Aging. 32: 1149-56. PMID 19632743 DOI: 10.1016/j.neurobiolaging.2009.05.022  0.88
2010 Zhang W, Tan YF, Atwood HL, Martin Wojtowicz J. Biphasic effects of the cholinergic agonist carbachol on long-term potentiation in the dentate gyrus of the mammalian hippocampus. Neuroscience Letters. 479: 157-60. PMID 20510338 DOI: 10.1016/j.neulet.2010.05.056  0.8
2010 Spreng RN, Wojtowicz M, Grady CL. Reliable differences in brain activity between young and old adults: a quantitative meta-analysis across multiple cognitive domains. Neuroscience and Biobehavioral Reviews. 34: 1178-94. PMID 20109489 DOI: 10.1016/j.neubiorev.2010.01.009  0.48
2010 Grady CL, Protzner AB, Kovacevic N, Strother SC, Afshin-Pour B, Wojtowicz M, Anderson JA, Churchill N, McIntosh AR. A multivariate analysis of age-related differences in default mode and task-positive networks across multiple cognitive domains. Cerebral Cortex (New York, N.Y. : 1991). 20: 1432-47. PMID 19789183 DOI: 10.1093/cercor/bhp207  0.48
2010 Heying B, Luo WB, Smorchkova I, Din S, Wojtowicz M. Reliable GaN HEMTS for high frequency applications Ieee Mtt-S International Microwave Symposium Digest. 1218-1221. DOI: 10.1109/MWSYM.2010.5517568  0.6
2010 Chen M, Sutton W, Smorchkova I, Heying B, Luo WB, Gambin V, Oshita F, Tsai R, Wojtowicz M, Kagiwada R, Oki A, Lin J. A 125 GHz GaN HEMT MMIC low-noise amplifier Ieee Microwave and Wireless Components Letters. 20: 563-565. DOI: 10.1109/LMWC.2010.2059002  0.6
2010 Chou YC, Leung DL, Biedenbender M, Buttari D, Eng DC, Tsai RS, Lin CH, Lee LS, Mei XB, Wojtowicz M, Barsky ME, Lai R, Oki AK, Block TR. Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications Ieee International Reliability Physics Symposium Proceedings. 807-812. DOI: 10.1109/IRPS.2010.5488728  0.6
2010 Chou YC, Leung DL, Biedenbender M, Eng DC, Buttari D, Mei XB, Lin CH, Tsai RS, Lai R, Barsky ME, Wojtowicz M, Oki AK, Block TR. High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 438-441. DOI: 10.1109/ICIPRM.2010.5516184  0.6
2010 Xin HP, Poust S, Sutton W, Li D, Lam D, Smorchkova I, Sandhu R, Heying B, Uyeda J, Barsky M, Wojtowicz M, Lai R. Improved surface morphology with low contact resistance 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010 0.6
2009 Becker S, Macqueen G, Wojtowicz JM. Computational modeling and empirical studies of hippocampal neurogenesis-dependent memory: Effects of interference, stress and depression. Brain Research. 1299: 45-54. PMID 19651106 DOI: 10.1016/j.brainres.2009.07.095  0.88
2009 Snyder JS, Radik R, Wojtowicz JM, Cameron HA. Anatomical gradients of adult neurogenesis and activity: young neurons in the ventral dentate gyrus are activated by water maze training. Hippocampus. 19: 360-70. PMID 19004012 DOI: 10.1002/hipo.20525  0.96
2009 Shih SE, Deal WR, Yamauchi DM, Sutton WE, Luo WB, Chen Y, Smorchkova IP, Heying B, Wojtowicz M, Siddiqui M. Design and analysis of ultra wideband GaN dual-gate HEMT low-noise amplifiers Ieee Transactions On Microwave Theory and Techniques. 57: 3270-3277. DOI: 10.1109/TMTT.2009.2034416  0.6
2009 Kobayashi KW, Chen Y, Smorchkova I, Heying B, Luo WB, Sutton W, Wojtowicz M, Oki A. Multi-decade GaN HEMT cascode-distributed power amplifier with baseband performance Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 369-372. DOI: 10.1109/RFIC.2009.5135560  0.6
2009 Shih SE, Deal WR, Yamauchi D, Sutton WE, Chen YC, Smorchkova I, Heying B, Wojtowicz M, Siddiqui M. Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers Ieee Mtt-S International Microwave Symposium Digest. 669-672. DOI: 10.1109/MWSYM.2009.5165785  0.6
2009 Kobayashi KW, Chen Y, Smorchkova I, Heying B, Luo WB, Sutton W, Wojtowicz M, Oki A. A cool, sub-0.2 dB noise figure GaN HEMT power amplifier with 2-watt output power Ieee Journal of Solid-State Circuits. 44: 2648-2654. DOI: 10.1109/JSSC.2009.2026842  0.6
2009 Chou YC, Chang-Chien P, Yang JM, Nishimoto MY, Hennig K, Lange MD, Zeng X, Parlee MR, Lin CH, Lee LS, Nam PS, Wojtowicz M, Barsky ME, Oki AK, Boos JB, et al. Manufacturable tri-stack ALSB/InAs hemt low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applicationsy Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 200-203. DOI: 10.1109/ICIPRM.2009.5012478  0.6
2009 Lin CH, Mei XB, Chou YC, Lee LS, Yang JM, Nishimoto MY, Liu PH, To R, Cavus A, Tsai R, Wojtowicz M, Lai R. Sub-mW operation of InP HEMT X-band low-noise amplifiers for low power applications Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/csics.2009.5315662  0.6
2009 Chou YC, Chang-Chien P, Leung DL, Kono RK, Zeng X, Parlee MR, Hennig KJT, Eng DC, Trucker C, Tsai RS, Wojtowicz M, Barsky ME, Oki AK, Block T. Reliability evaluation of hermetic GaAs HEMT MMICs using wafer-scale-assembly technology for compact and light-weight applications 2009 Reliability of Compound Semiconductors Digest - Rocs Workshop. 141-146.  0.6
2008 Wojtowicz JM, Askew ML, Winocur G. The effects of running and of inhibiting adult neurogenesis on learning and memory in rats. The European Journal of Neuroscience. 27: 1494-502. PMID 18364025 DOI: 10.1111/j.1460-9568.2008.06128.x  0.88
2008 Hsiang C, Zhian L, Kung SC, Penner RM, Chou YC, Lai R, Wojtowicz M, Li GP. Observing electroluminescence from yellow luminescence-like defects in GaN high electron mobility transistors Japanese Journal of Applied Physics. 47: 3336-3339. DOI: 10.1143/JJAP.47.3336  0.6
2008 Chou YC, Yang JM, Lange MD, Tsui SS, Leung DL, Lin CH, Wojtowicz M, Oki AK. Degradation mechanisms of 0.1 μm AlSb/InAs HEMTS for ultralow-power applications Ieee International Reliability Physics Symposium Proceedings. 436-440. DOI: 10.1109/RELPHY.2008.4558924  0.6
2008 Lan X, Wojtowicz M, Truong M, Fong F, Kintis M, Heying B, Smorchkova I, Chen YC. A V-band monolithic AlGaN/GaN VCO Ieee Microwave and Wireless Components Letters. 18: 407-409. DOI: 10.1109/LMWC.2008.922660  0.6
2008 Chou YC, Lee LJ, Yang JM, Lange MD, Nam PS, Lin CH, Quach H, Gutierrez AL, Barsky ME, Wojtowicz M, Oki AK, Block TR, Boos JB, Bennett BR, Papanicolaou NA. The effect of gate metals on manufacturability of 0.1 μm metamorphic ALSB/INAS Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4702994  0.6
2008 Kobayashi KW, Chen Y, Smorchkova I, Heying B, Luo WB, Sutton W, Wojtowicz M, Oki A. A cool, sub-0.2 dB, ultra-low noise gallium nitride multi-octave MMIC LNA-PA with 2-watt output power 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.54  0.6
2008 Block TR, Elliott J, Chou YC, Biedenbender M, Leung D, Eng D, Oki A, Wojtowicz M, Lai R. Reliability and MMIC technology development and production 2008 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2008 0.6
2007 Becker S, Wojtowicz JM. A model of hippocampal neurogenesis in memory and mood disorders. Trends in Cognitive Sciences. 11: 70-6. PMID 17174137 DOI: 10.1016/j.tics.2006.10.013  0.88
2007 Chou YC, Leung DL, Luo WB, Yang JM, Lin CH, Lange MD, Kan QW, Farkas DS, Boos JB, Bennett BR, Gutierrez AL, Eng DC, Wojtowicz M, Oki A, Block T. Reliability evaluation of 0.1 μm AISb/InAs HEMT low noise amplifiers for ultralow-power applications 2007 Rocs Workshop (Formerly the Gaas Rel Workshop)- Reliability of Compound Semiconductors, Proceedings. 43-46. DOI: 10.1109/ROCS.2007.4391060  0.6
2007 Coffie R, Chen Y, Smorchkova IP, Heying B, Gambin V, Sutton W, Chou YC, Luo WB, Wojtowicz M, Oki A. Temperature and voltage dependent RF degradation study in ALGaN/GaN HEMTS Annual Proceedings - Reliability Physics (Symposium). 568-569. DOI: 10.1109/RELPHY.2007.369954  0.6
2007 Chou YC, Yang JM, Lin CH, Lee J, Lange M, Tsai R, Nam P, Nishimoto M, Gutierrez A, Quach H, Lai R, Farkas D, Wojtowicz M, Chin P, Barsky M, et al. Manufacturable and reliable 0.1 μm AlSb/InAs HEMT MMIC technology for ultra-low power applications Ieee Mtt-S International Microwave Symposium Digest. 461-464. DOI: 10.1109/MWSYM.2007.380488  0.6
2007 Chen Y, Coffie R, Luo WB, Wojtowicz M, Smorchkova I, Heying B, Kim YM, Aust MV, Oki A. Survivability of AlGaN/GaN HEMT Ieee Mtt-S International Microwave Symposium Digest. 307-310. DOI: 10.1109/MWSYM.2007.380413  0.6
2007 Kobayashi KW, Chen Y, Smorchkova I, Tsai R, Wojtowicz M, Oki A. A 2 watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz Ieee Mtt-S International Microwave Symposium Digest. 619-622. DOI: 10.1109/MWSYM.2007.379977  0.6
2007 Chou YC, Lange MD, Bennett BR, Boos JB, Yang JM, Papanicolaouu NA, Lin CH, Lee LJ, Nam PS, Gutierrez AL, Farkas DS, Tsai RS, Wojtowicz M, Chin TP, Oki AK. 0.1 μm In0.2Al0.8Sb-InAs HEMT low-noise amplifiers for ultralow-power applications Technical Digest - International Electron Devices Meeting, Iedm. 617-620. DOI: 10.1109/IEDM.2007.4419015  0.6
2007 Lai R, Chou YC, Lee LJ, Liu PH, Leung D, Kan Q, Mei X, Lin CH, Farkas D, Barsky M, Eng D, Cavus A, Lange M, Chin P, Wojtowicz M, et al. High performance and high reliability of 0.1 μm InP HEMT MMIC technology on 100 mm InP substrates Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 63-66. DOI: 10.1109/ICIPRM.2007.381123  0.6
2007 Farkas DS, Uyeda J, Wang J, Luo WB, Elmadjian R, Eaves D, Luo K, Lai R, Barsky M, Wojtowicz M, Oki A. Demonstration of a 3-D GaAs HEMT phase shifter MMIC utilizing a five layer BCB process with seven metal layers Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 206-208. DOI: 10.1109/CSICS07.2007.55  0.6
2007 Lin CH, Chou YC, Lange MD, Yang JM, Nishimoto MY, Lee J, Nam PS, Boos JB, Bennett BR, Papanicolaou NA, Tsai RS, Gutierrez AL, Barsky ME, Chin TP, Wojtowicz M, et al. 0.1 μm n+-InAs-AlSb-InAs HEMT MMIC technology for phased-array applications Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 178-181. DOI: 10.1109/CSICS07.2007.48  0.6
2007 Shih SE, Deal WR, Sutton WE, Chen YC, Smorchkova I, Heying B, Wojtowicz M, Siddiqui M. Broadband GaN dual-gate HEMT low noise amplifier Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 92-95. DOI: 10.1109/CSICS07.2007.26  0.6
2007 Heying B, Smorchkova IP, Coffie R, Gambin V, Chen YC, Sutton W, Lam T, Kahr MS, Sikorski KS, Wojtowicz M. In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy Electronics Letters. 43: 779-780. DOI: 10.1049/el:20071211  0.6
2006 Wojtowicz JM, Kee N. BrdU assay for neurogenesis in rodents. Nature Protocols. 1: 1399-405. PMID 17406427 DOI: 10.1038/nprot.2006.224  0.88
2006 Winocur G, Wojtowicz JM, Sekeres M, Snyder JS, Wang S. Inhibition of neurogenesis interferes with hippocampus-dependent memory function. Hippocampus. 16: 296-304. PMID 16411241 DOI: 10.1002/hipo.20163  0.88
2006 Chou YC, Luo BW, Leung D, Kan Q, Biedenbender M, Bhorania R, Lai R, Eng D, Farkas D, Chin P, Wojtowicz M, Block T, Oki A. The effect of gate current on the degradation of GaAs PHEMT MMICs 2006 Rocs Workshop - Reliability of Compound Semiconductors, Proceedings. 111-114. DOI: 10.1109/ROCS.2006.323408  0.6
2006 Coffie R, Chen YC, Smorchkova I, Wojtowicz M, Chou YC, Heying B, Oki A. Impact of AlN interalayer on reliability of AlGaN/GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 99-102. DOI: 10.1109/RELPHY.2006.251198  0.6
2006 Lan X, Wojtowicz M, Smorchkova I, Coffie R, Tsai R, Heying B, Truong M, Fong F, Kintis M, Namba C, Oki A, Wong T. A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO Ieee Microwave and Wireless Components Letters. 16: 425-427. DOI: 10.1109/LMWC.2006.877128  0.6
2006 Aust MV, Sharma AK, Chen YC, Wojtowicz M. Wideband dual-gate GaN HEMT low noise amplifier for front-end receiver electronics Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 89-92. DOI: 10.1109/CSICS.2006.319921  0.6
2006 Chou YC, Lai R, Leung D, Kan Q, Farkas D, Eng D, Wojtowicz M, Chin P, Block T, Oki A. Gate sinking effect of 0.1 μm InP HEMT MMICS using Pt/Ti/Pt/Au Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 188-191.  0.6
2005 Wang S, Kee N, Preston E, Wojtowicz JM. Electrophysiological correlates of neural plasticity compensating for ischemia-induced damage in the hippocampus. Experimental Brain Research. 165: 250-60. PMID 15883804 DOI: 10.1007/s00221-005-2296-8  0.88
2005 Streit DC, Gutierrez-Aitken A, Wojtowicz M, Lai R. The future of compound semiconductors for aerospace and defense applications Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 5-8. DOI: 10.1109/CSICS.2005.1531737  0.6
2005 Hayashi S, Sandhu R, Wojtowicz M, Sun Y, Hicks R, Goorsky MS. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity Journal of Physics D: Applied Physics. 38: A174-A178. DOI: 10.1088/0022-3727/38/10A/033  0.6
2005 Poust B, Heying B, Hayashi S, Ho R, Matney K, Sandhu R, Wojtowicz M, Goorsky M. Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC Journal of Physics D: Applied Physics. 38: A93-A98. DOI: 10.1088/0022-3727/38/10A/018  0.6
2005 Hayashi S, Sandhu R, Wojtowicz M, Chen G, Hicks R, Goorsky MS. InGaAs quantum wells on wafer-bonded InP/GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2130889  0.6
2005 Hayashi S, Sandhu R, Bruno D, Wojtowicz M, Goorsky MS. Effects of implantation heating on exfoliation of InP Sensors and Materials. 17: 335-341.  0.6
2005 Hayashi S, Sandhu R, Bruno D, Wojtowicz M, Goorsky MS. Implantation temperature effect on the defect profile in hydrogen implanted InP Proceedings - Electrochemical Society. 134-139.  0.6
2004 Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS. Strain relaxation and surface roughness of in xAl 1-xAs graded buffer layers grown on InP for 6.05 Å applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2303-2308. DOI: 10.1116/1.1782640  0.6
2004 Chou YC, Grundbacher R, Leung D, Lai R, Liu PH, Kan Q, Biedenbender M, Wojtowicz M, Eng D, Oki A. Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs Ieee Electron Device Letters. 25: 64-66. DOI: 10.1109/LED.2003.822666  0.6
2004 Chou YC, Leung D, Smorchkova I, Wojtowicz M, Grundbacher R, Callejo L, Kan Q, Lai R, Liu PH, Eng D, Oki A. Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting Microelectronics Reliability. 44: 1033-1038. DOI: 10.1016/j.microrel.2004.03.008  0.6
2004 Hayashi S, Goorsky MS, Sandhu R, Wojtowicz M. Processing issues for wafer bonded III-V on insulator structures Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361.  0.6
2004 Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M. X-ray diffraction imaging of GaN-based heterostructures on SiC Materials Science Forum. 457: 1601-1604.  0.6
2003 Smorchkova IP, Wojtowicz M, Sandhu R, Tsai R, Barsky M, Namba C, Liu PS, Dia R, Truong M, Ko D, Wang J, Wang H, Khan A. AlGaN/GaN HEMTs - Operation in the K-band and above Ieee Transactions On Microwave Theory and Techniques. 51: 665-668. DOI: 10.1109/TMTT.2002.807683  0.6
2003 Chou YC, Leung D, Lai R, Grundbacher R, Barsky M, Kan Q, Tsai R, Wojtowicz M, Eng D, Tran L, Block T, Liu PH, Nishimoto M, Oki A. Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel Ieee Electron Device Letters. 24: 378-380. DOI: 10.1109/LED.2003.813357  0.6
2003 Poust B, Feichtinger P, Wojtowicz M, Sandhu R, Heying B, Block T, Khan A, Goorsky M. X-ray diffraction imaging of wide bandgap materials Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 12-13. DOI: 10.1109/ISCS.2003.1239881  0.6
2003 Chou YC, Smorchkova I, Leung D, Wojtowicz M, Grundbacher R, Callejo L, Kan Q, Lai R, Liu PH, Eng D, Tsai R, Oki A. Reliability investigation of 0.25 μm AlGaN/GaN HEMTs under elevated temperature lifetesting Gaas Reliability Workshop, Proceedings. 2003: 137-153. DOI: 10.1109/GAASRW.2003.183772  0.6
2003 Chou YC, Leung D, Lai R, Grundbacher R, Liu PH, Biedenbender M, Kan Q, Eng D, Wojtowicz M, Oki A. On the investigation of gate metal interdiffusion in GaAs HEMTs Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 63-66.  0.6
2003 Feichtinger P, Poust B, Wormington M, Bowen KD, Goorsky MS, Sandhu R, Wojtowicz M. Crystal quality determination of wide bandgap materials using x-ray topography Proceedings - Electrochemical Society. 11: 164-173.  0.6
2003 Poust BD, Koga TS, Sandhu R, Heying B, Hsing R, Wojtowicz M, Khan A, Goorsky MS. SiC substrate defects and III-N heteroepitaxy Journal of Physics D: Applied Physics. 36: A102-A106.  0.6
2002 Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC. Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1205-1208. DOI: 10.1116/1.1477201  0.6
2002 Smorchkova IP, Wojtowicz M, Tsai R, Sandhu R, Barsky M, Namba C, Liu PH, Dia R, Truong M, Ko D, Wang J, Wang H, Khan A. AlGaN/GaN HEMT high-power and low-noise performance at f ≥ 20 GHz Proceedings Ieee Lester Eastman Conference On High Performance Devices. 422-427.  0.6
2002 Du G, Lindemuth JR, Dodrill BC, Sandhu R, Wojtowicz M, Goorsky MS, Vurgaftman I, Meyer JR. Characterizing multi-carrier devices with quantitative mobility spectrum analysis and variable field Hall measurements Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41: 1055-1058.  0.6
2002 Chou YC, Leung D, Lai R, Grundbacher R, Barsky M, Tsai R, Eng D, Wojtowicz M, Nishimoto M, Liu PH, Oki A, Streit D. High reliability of 0.07 μm Pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 365-368.  0.6
2002 Chou YC, Leung D, Lai R, Grundbacher R, Barsky M, Kan Q, Tsai R, Eng D, Wojtowicz M, Block T, Liu PH, Olson S, Oki A, Streit DC. 0.1 μm InGaAs/InAlAs/InP HEMT MMICS - A flight qualified technology Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 77-80.  0.6
2001 Sandhu R, Wojtowicz M, Barsky M, Tsai R, Smorchkova I, Namba C, Liu PH, Dia R, Truong M, Ko D, Yang JW, Wang H, Khan MA. 1.6 W/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz Technical Digest - International Electron Devices Meeting. 940-942.  0.6
2001 Welch R, Jenkins T, Neidhard B, Kehias L, Quach T, Watson P, Worley R, Barsky M, Sandhu R, Wojtowicz M. Low noise hybrid amplifier using AlGaN/GaN power HEMT devices Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 153-155.  0.6
2000 Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC. Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1658-1662. DOI: 10.1116/1.591446  0.6
2000 Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR. High performance InP high electron mobility transistors by valved phosphorus cracker Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1642-1644. DOI: 10.1116/1.591443  0.6
2000 Chen TH, Huang YS, Shou TS, Tiong KK, Lin DY, Pollak FH, Goorsky MS, Streit DC, Wojtowicz M. Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures Physica E: Low-Dimensional Systems and Nanostructures. 8: 297-305. DOI: 10.1016/S1386-9477(00)00165-X  0.6
2000 Sandhu R, Hsing R, Naidenkova M, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC. Carrier transport in partially relaxed In0.75Ga0.25As/InP high electron mobility structures Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 118-121.  0.6
2000 Oki AK, Streit DC, Lai R, Gutierrez-Aitken A, Chen YC, Grundbacher R, Grossman PC, Block T, Chin P, Barsky M, Sawdai D, Wojtowicz M, Kaneshiro E, Yen HC. InP HBT & HEMT technology and applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 7-8.  0.6
2000 Chen YC, Grundbacher R, Chin TP, Barsky M, Lai R, Yang LW, Block T, Wojtowicz M, Yen HC, Oki A, Streit DC. 21 GHz highly efficient composite-channel InP HEMT Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 75-78.  0.6
2000 Chen TH, Huang YS, Lin DY, Pollak FH, Goorsky MS, Streit DC, Wojtowicz M. Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation Journal of Applied Physics. 88: 883-888.  0.6
2000 Balandin A, Wang KL, Cai S, Li R, Viswanathan CR, Wang EN, Wojtowicz M. Investigation of flicker noise and deep-levels in GaN/AlGaN transistors Journal of Electronic Materials. 29: 297-301.  0.6
2000 Chen YC, Lai R, Ingram DL, Block T, Wojtowicz M, Liu PH, Yen HC, Oki A, Streit DC, Yano K. Highly efficient high power InP HEMT amplifiers for high frequency applications Annual Device Research Conference Digest. 139-140.  0.6
1999 Han AC, Wojtowicz M, Block TR, Zhang X, Chin TP, Cavus A, Oki A, Streit DC. Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence Journal of Applied Physics. 86: 6160-6163.  0.6
1999 Chen YC, Ingram DL, Yamauchi D, Brunner B, Kraus J, Barsky M, Grundbacher R, Cha SK, Lai R, Block T, Wojtowicz M, Chin TP, Allen B, Yen HC, Streit DC. Single chip 1-W InP HEMT V-band module Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 149-152.  0.6
1999 Chen YC, Chin P, Ingram D, Lai R, Grundbacher R, Barsky M, Block T, Wojtowicz M, Tran L, Medvedev V, Yen HC, Streit DC, Brown A. Composite-channel InP HEMT for W-band power amplifiers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 305-306.  0.6
1998 Mishori B, Leibovitch M, Shapira Y, Pollak FH, Streit DC, Wojtowicz M. Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor Applied Physics Letters. 73: 650-652. DOI: 10.1063/1.121936  0.6
1998 Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC. Multiwafer molecular beam epitaxy for high volume production of GaAs/AIGaAs heterojunction bipolar transistor wafers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1475-1478.  0.6
1997 Han AC, Wojtowicz M, Pascua D, Block TR, Streit DC. Photoreflectance study of pseudomorphic high electron mobility transistors Journal of Applied Physics. 82: 2607-2610.  0.6
1997 Block TR, Cowles J, Tran L, Wojtowicz M, Oki AK, Streit DC. MBE growth of quaternary InGaAlAs layers in InGaAs/InAlAs HBTs to improve device performance Journal of Crystal Growth. 175: 903-909.  0.6
1997 Wojtowicz M, Pascua D, Han AC, Block TR, Streit DC. Photoluminescence characterization of mbe grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs Journal of Crystal Growth. 175: 930-934.  0.6
1997 Tran LT, Cowles JC, Yang LW, Block TR, Grossman PC, Kobayashi KW, Wojtowicz M, Oki AK, Streit DC, Elliott JH, Callejo LG, Yen HC, Rezek ED. Manufacturable InP-based HBT technology for low voltage millimeter-wave and microwave communications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 133-136.  0.6
1997 Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M. Technology and production of HBT epitaxial material Ieee Mtt-S International Topical Symposium On Technologies For Wireless Applications, Proceedings. 126-128.  0.6
1997 Goorsky MS, Sandhu R, Bhasin G, Moore CD, Streit DG, Block TR, Wojtowicz M. Substrate crystallinity and the performance of InP-based pseudomorphic high electron mobility transistors Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 264-267.  0.6
1996 Block TR, Wojtowicz M, Cowles J, Tran L, Oki AK, Streit DC. Molecular beam epitaxy growth and characterization of InGaAIAs-collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2221-2224.  0.6
1996 Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M. Commercial heterojunotion bipolar transistor production by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2216-2220.  0.6
1996 Wojtowicz M, Block T, Pascua D, Han AC, Streit D. Photoreflectance characterization of graded emitter InAlGaAs/InGaAs HBTs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 576-577.  0.6
1995 Streit DC, Block TR, Wojtowicz M, Pascua D, Lai R, Ng GI, Liu PH, Tan KL. Graded-channel InGaAs-InAlAs-InP high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 774-776. DOI: 10.1116/1.588161  0.6
1995 Streit DC, Block TR, Han AC, Wojtowicz M, Umemoto DK, Kobayashi K, Oki AK, Liu PH, Lai R, Ng GI. GaAs and InP selective molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 771-773. DOI: 10.1116/1.588160  0.6
1995 Meshkinpour M, Goorsky MS, Chu G, Streit DC, Block TR, Wojtowicz M. Role of misfit dislocations on pseudomorphic high electron mobility transistors Applied Physics Letters. 748. DOI: 10.1063/1.114081  0.6
1995 Meshkinpour M, Goorsky MS, Streit DC, Block TR, Wojtowicz M. Degradation of InGaAs high electron mobility transistors: the role of channel composition and thickness Materials Research Society Symposium - Proceedings. 378: 783-787.  0.6
1994 Wojtowicz M, Lai R, Streit DC, Ng GI, Block TR, Tan KL, Liu PH, Freudenthal AK, Dia RM. 0.10 μm graded InGaAs Channel InP HEMT with 305 GHz fT and 340 GHz fmax Ieee Electron Device Letters. 15: 477-479. DOI: 10.1109/55.334673  0.6
1993 Lai R, Wojtowicz M, Chen CH, Biedenbender M, Yen HC, Streit DC, Tan KL, Liu PH. High-Power 0.15-μm V-band Pseudomorphic InGaAs-AlGaAs-GaAs HEMT Ieee Microwave and Guided Wave Letters. 3: 363-365. DOI: 10.1109/75.242262  0.6
1992 Yin Y, Qiang H, Pollak FH, Streit DC, Wojtowicz M. Two-dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga 0.79As/GaAs modulation-doped quantum well structure Applied Physics Letters. 61: 1579-1581.  0.6
Show low-probability matches.