| Year |
Citation |
Score |
| 2019 |
Kai Y, Xu W, Zheng B, Yang N, Zhang K, Thibado PM. Origin of Non-Gaussian Velocity Distribution Found in Freestanding Graphene Membranes Complexity. 2019: 1-7. DOI: 10.1155/2019/6101083 |
0.317 |
|
| 2016 |
Ackerman ML, Kumar P, Neek-Amal M, Thibado PM, Peeters FM, Singh S. Anomalous Dynamical Behavior of Freestanding Graphene Membranes. Physical Review Letters. 117: 126801. PMID 27689288 DOI: 10.1103/Physrevlett.117.126801 |
0.578 |
|
| 2015 |
Schoelz JK, Xu P, Meunier V, Kumar P, Neek-Amal M, Thibado PM, Peeters FM. Graphene ripples as a realization of a two-dimensional Ising model: A scanning tunneling microscope study Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.045413 |
0.387 |
|
| 2014 |
Neek-Amal M, Xu P, Schoelz JK, Ackerman ML, Barber SD, Thibado PM, Sadeghi A, Peeters FM. Thermal mirror buckling in freestanding graphene locally controlled by scanning tunnelling microscopy. Nature Communications. 5: 4962. PMID 25230052 DOI: 10.1038/Ncomms5962 |
0.701 |
|
| 2014 |
Xu P, Neek-Amal M, Barber SD, Schoelz JK, Ackerman ML, Thibado PM, Sadeghi A, Peeters FM. Unusual ultra-low-frequency fluctuations in freestanding graphene. Nature Communications. 5: 3720. PMID 24770734 DOI: 10.1038/Ncomms4720 |
0.706 |
|
| 2014 |
Xu P, Dong L, Neek-Amal M, Ackerman ML, Yu J, Barber SD, Schoelz JK, Qi D, Xu F, Thibado PM, Peeters FM. Self-organized platinum nanoparticles on freestanding graphene. Acs Nano. 8: 2697-703. PMID 24499285 DOI: 10.1021/Nn406394F |
0.734 |
|
| 2014 |
Neek-Amal M, Xu P, Qi D, Thibado PM, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Peeters FM. Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.064101 |
0.566 |
|
| 2014 |
Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM. Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC Carbon. DOI: 10.1016/J.Carbon.2014.08.028 |
0.587 |
|
| 2013 |
Xu P, Ackerman ML, Barber SD, Schoelz JK, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Graphene manipulation on 4H-SiC(0001) using scanning tunneling microscopy Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.035104 |
0.775 |
|
| 2013 |
Basnet G, Kevin Schoelz J, Xu P, Barber SD, Ackerman ML, Thibado PM. Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4812796 |
0.698 |
|
| 2013 |
Xu P, Barber SD, Ackerman ML, Kevin Schoelz J, Thibado PM. Role of bias voltage and tunneling current in the perpendicular displacements of freestanding graphene via scanning tunneling microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4804401 |
0.701 |
|
| 2013 |
Xu P, Barber SD, Kevin Schoelz J, Ackerman ML, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Kurt Gaskill D. Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4803137 |
0.764 |
|
| 2013 |
Xu P, Ackerman ML, Barber SD, Schoelz JK, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface Surface Science. 617: 113-117. DOI: 10.1016/J.Susc.2013.06.012 |
0.723 |
|
| 2012 |
Sitnitsky I, Garramone JJ, Abel J, Xu P, Barber SD, Ackerman ML, Kevin Schoelz J, Thibado PM, Labella VP. Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4734307 |
0.754 |
|
| 2012 |
Schoelz JK, Xu P, Barber SD, Qi D, Ackerman ML, Basnet G, Cook CT, Thibado PM. High-percentage success method for preparing and pre-evaluating tungsten tips for atomic-resolution scanning tunneling microscopy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 033201. DOI: 10.1116/1.3701977 |
0.743 |
|
| 2012 |
Xu P, Yang Y, Qi D, Barber SD, Schoelz JK, Ackerman ML, Bellaiche L, Thibado PM. Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.085428 |
0.778 |
|
| 2012 |
Xu P, Yang Y, Barber SD, Ackerman ML, Schoelz JK, Qi D, Kornev IA, Dong L, Bellaiche L, Barraza-Lopez S, Thibado PM. Atomic control of strain in freestanding graphene Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.121406 |
0.753 |
|
| 2012 |
Xu P, Schoelz JK, Barber SD, Ackerman ML, Thibado PM. Broad frequency and amplitude control of vibration in freestanding graphene via scanning tunneling microscopy with calculated dynamic pseudo-magnetic fields Journal of Applied Physics. 112. DOI: 10.1063/1.4771874 |
0.685 |
|
| 2012 |
Dong L, Hansen J, Xu P, Ackerman ML, Barber SD, Schoelz JK, Qi D, Thibado PM. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO 2) nanoparticles Applied Physics Letters. 101. DOI: 10.1063/1.4745780 |
0.738 |
|
| 2012 |
Xu P, Yang Y, Qi D, Barber SD, Ackerman ML, Schoelz JK, Bothwell TB, Barraza-Lopez S, Bellaiche L, Thibado PM. A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy Applied Physics Letters. 100. DOI: 10.1063/1.4716475 |
0.759 |
|
| 2012 |
Xu P, Yang Y, Barber SD, Schoelz JK, Qi D, Ackerman ML, Bellaiche L, Thibado PM. New scanning tunneling microscopy technique enables systematic study of the unique electronic transition from graphite to graphene Carbon. 50: 4633-4639. DOI: 10.1016/J.Carbon.2012.05.050 |
0.78 |
|
| 2011 |
Xu P, Qi D, Barber SD, Cook CT, Ackerman ML, Thibado PM. Streamlined inexpensive integration of a growth facility and scanning tunneling microscope for in-situ characterization Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3607606 |
0.728 |
|
| 2011 |
Xu P, Yang Y, Barber SD, Ackerman ML, Schoelz JK, Kornev IA, Barraza-Lopez S, Bellaiche L, Thibado PM. Giant surface charge density of graphene resolved from scanning tunneling microscopy and first-principles theory Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.161409 |
0.717 |
|
| 2011 |
Xu P, Qi D, Ackerman ML, Barber SD, Thibado PM. Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth Journal of Crystal Growth. 327: 42-45. DOI: 10.1016/J.Jcrysgro.2011.06.023 |
0.743 |
|
| 2007 |
Xu JF, Thibado PM, Awo-Affouda C, Ramos F, Labella VP. Anomalous Mn depth profiles for GaMnAsGaAs (001) thin films grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1476-1480. DOI: 10.1116/1.2746351 |
0.654 |
|
| 2007 |
Xu JF, Liu SW, Xiao M, Thibado PM. Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1467-1469. DOI: 10.1116/1.2746349 |
0.339 |
|
| 2007 |
Xu JF, Thibado PM, Awo-Affouda C, Moore R, LaBella VP. Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy Journal of Crystal Growth. 301: 54-57. DOI: 10.1016/J.Jcrysgro.2006.11.234 |
0.659 |
|
| 2007 |
Xu JF, Liu SW, Xiao M, Thibado PM. Electrical and optical studies of GaMnAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy Journal of Crystal Growth. 301: 101-104. DOI: 10.1016/J.Jcrysgro.2006.11.049 |
0.348 |
|
| 2006 |
Xu JF, Thibado PM, Ding Z. 4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers Review of Scientific Instruments. 77. DOI: 10.1063/1.2349599 |
0.402 |
|
| 2005 |
LaBella VP, Krause MR, Ding Z, Thibado PM. Arsenic-rich GaAs(0 0 1) surface structure Surface Science Reports. 60: 1-53. DOI: 10.1016/J.Surfrep.2005.10.001 |
0.758 |
|
| 2004 |
Ding Z, Thibado PM, Awo-Affouda C, LaBella VP. Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2068-2072. DOI: 10.1116/1.1771674 |
0.646 |
|
| 2003 |
Ding Z, Bullock DW, Thibado PM, LaBella VP, Mullen K. Atomic-scale observation of temperature and pressure driven preroughening and roughening. Physical Review Letters. 90: 216109. PMID 12786573 DOI: 10.1103/Physrevlett.90.216109 |
0.759 |
|
| 2003 |
Bullock DW, LaBella VP, Ding Z, Thibado PM. Simultaneous surface topography and spin-injection probability Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 67-70. DOI: 10.1116/1.1532022 |
0.726 |
|
| 2003 |
Bullock DW, Ding Z, Thibado PM, LaBella VP. Role of aperiodic surface defects on the intensity of electron diffraction spots Applied Physics Letters. 82: 2586-2588. DOI: 10.1063/1.1568161 |
0.751 |
|
| 2003 |
Vézian S, Semond F, Massies J, Bullock DW, Ding Z, Thibado PM. Origins of GaN(0 0 0 1) surface reconstructions Surface Science. 541: 242-251. DOI: 10.1016/S0039-6028(03)00950-6 |
0.621 |
|
| 2003 |
Ding Z, Bullock DW, Thibado PM, LaBella VP, Mullen K. Time-evolution of the GaAs(0 0 1) pre-roughening process Surface Science. 540: 491-496. DOI: 10.1016/S0039-6028(03)00916-6 |
0.743 |
|
| 2003 |
Ding Z, Bullock DW, Oliver WF, Thibado PM, LaBella VP. Dynamics of spontaneous roughening on the GaAs(0 0 1)-(2 × 4) surface Journal of Crystal Growth. 251: 35-39. DOI: 10.1016/S0022-0248(02)02272-8 |
0.742 |
|
| 2002 |
Bullock DW, LaBella VP, Clingan T, Ding Z, Stewart G, Thibado PM. Enhancing the Student‐Instructor Interaction Frequency The Physics Teacher. 40: 535-541. DOI: 10.1119/1.1534821 |
0.664 |
|
| 2002 |
Bullock DW, LaBella VP, Ding Z, Thibado PM. Mapping the spin-injection probability on the atomic scale Journal of Superconductivity and Novel Magnetism. 15: 37-42. DOI: 10.1023/A:1014023126179 |
0.723 |
|
| 2001 |
LaBella VP, Bullock DW, Ding Z, Emery C, Venkatesan A, Oliver WF, Salamo GJ, Thibado PM, Mortazavi M. Spatially resolved spin-injection probability for gallium arsenide. Science (New York, N.Y.). 292: 1518-21. PMID 11375485 DOI: 10.1126/Science.292.5521.1518 |
0.695 |
|
| 2001 |
LaBella VP, Ding Z, Bullock DW, Emery C, Thibado PM. A union of the real-space and reciprocal-space view of the GaAs(001) surface International Journal of Modern Physics B. 15: 2301-2333. DOI: 10.1142/S0217979201005647 |
0.759 |
|
| 2001 |
LaBella VP, Ding Z, Bullock DW, Emery C, Thibado PM. Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1640-1643. DOI: 10.1116/1.1386376 |
0.745 |
|
| 2001 |
LaBella VP, Bullock DW, Emery C, Ding Z, Thibado PM. Enabling electron diffraction as a tool for determining substrate temperature and surface morphology Applied Physics Letters. 79: 3065-3067. DOI: 10.1063/1.1416477 |
0.771 |
|
| 2000 |
LaBella VP, Bullock DW, Anser M, Ding Z, Emery C, Bellaiche L, Thibado PM. Microscopic view of a two-dimensional lattice-Gas ising system within the grand canonical ensemble Physical Review Letters. 84: 4152-5. PMID 10990633 DOI: 10.1103/Physrevlett.84.4152 |
0.735 |
|
| 2000 |
LaBella VP, Bullock DW, Ding Z, Emery C, Harter WG, Thibado PM. Monte Carlo derived diffusion parameters for Ga on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1526-1531. DOI: 10.1116/1.582379 |
0.761 |
|
| 2000 |
LaBella VP, Ding Z, Bullock DW, Emery C, Thibado PM. Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1492-1496. DOI: 10.1116/1.582373 |
0.76 |
|
| 1999 |
Yang H, LaBella VP, Bullock DW, Thibado PM. Role of As[sub 4] in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1778. DOI: 10.1116/1.590825 |
0.746 |
|
| 1999 |
Thibado PM. Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 253-256. DOI: 10.1116/1.590508 |
0.303 |
|
| 1999 |
LaBella VP, Yang H, Bullock DW, Thibado PM, Kratzer P, Scheffler M. Atomic structure of the GaAs(001)-(2 × 4) surface resolved using scanning tunneling microscopy and first-principles theory Physical Review Letters. 83: 2989-2992. DOI: 10.1103/Physrevlett.83.2989 |
0.751 |
|
| 1999 |
Yang H, Labella VP, Bullock DW, Ding Z, Smathers JB, Thibado PM. Activation energy for Ga diffusion on the GaAs(0 0 1)-(2×4) surface: An MBE-STM study Journal of Crystal Growth. 201: 88-92. DOI: 10.1016/S0022-0248(98)01296-2 |
0.766 |
|
| 1998 |
Smathers JB, Bullock DW, Ding Z, Salamo GJ, Thibado PM, Gerace B, Wirth W. Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3112-3114. DOI: 10.1116/1.590496 |
0.6 |
|
| 1998 |
Twigg ME, Bennett BR, Thibado PM, Shanabrook BV, Whitman LJ. Interfacial disorder in InAs/GaSb superlattices Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 77: 7-30. DOI: 10.1080/01418619808214228 |
0.635 |
|
| 1997 |
Whitman LJ, Thibado PM, Erwin SC, Bennett BR, Shanabrook BV. Metallic III-V (001) surfaces: Violations of the electron counting model Physical Review Letters. 79: 693-696. DOI: 10.1103/Physrevlett.79.693 |
0.616 |
|
| 1997 |
Kneedler EM, Jonker BT, Thibado PM, Wagner RJ, Shanabrook BV, Whitman LJ. Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs(001) Physical Review B - Condensed Matter and Materials Physics. 56: 8163-8168. DOI: 10.1103/Physrevb.56.8163 |
0.596 |
|
| 1997 |
Jonker BT, Kneedler EM, Thibado P, Glembocki OJ, Whitman LJ, Bennett BR. Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract) Journal of Applied Physics. 81: 4362-4362. DOI: 10.1063/1.364822 |
0.611 |
|
| 1997 |
Thibado PM, Bennett BR, Shanabrook BV, Whitman LJ. A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructions Journal of Crystal Growth. 175: 317-322. DOI: 10.1016/S0022-0248(96)00982-7 |
0.631 |
|
| 1997 |
Bennett BR, Shanabrook BV, Thibado PM, Whitman LJ, Magno R. Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: Structure of the wetting layers Journal of Crystal Growth. 175: 888-893. DOI: 10.1016/S0022-0248(96)00917-7 |
0.596 |
|
| 1997 |
Thibado PM, Bonnell DA. Metal-oxide interactions on copper-segregated and copper-deposited TiO 2 rutile (001) surfaces Journal of the American Ceramic Society. 80: 1267-1273. |
0.48 |
|
| 1996 |
Thibado PM, Kneedler E, Jonker BT, Bennett BR, Shanabrook BV, Whitman LJ. Nucleation and growth of Fe on GaAs(001)-(2 x 4) studied by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 53: R10481-R10484. PMID 9982711 DOI: 10.1103/Physrevb.53.R10481 |
0.583 |
|
| 1996 |
Thibado PM, Mercer TW, Fu S, Egami T, DiNardo NJ, Bonnell DA. Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions Journal of Vacuum Science & Technology B. 14: 1607-1610. DOI: 10.1116/1.589199 |
0.572 |
|
| 1996 |
Bennett BR, Thibado PM, Twigg ME, Glaser ER, Magno R, Shanabrook BV, Whitman LJ. Self-assembled InSb and GaSb quantum dots on GaAs(001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2195-2198. DOI: 10.1116/1.588898 |
0.554 |
|
| 1996 |
Thibado PM, Bennett BR, Twigg ME, Shanabrook BV, Whitman LJ. Evolution of GaSb epitaxy on GaAs(001)-c(4×4) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 885-889. DOI: 10.1116/1.580408 |
0.594 |
|
| 1996 |
Kneedler E, Thibado PM, Jonker BT, Bennett BR, Whitman LJ, Shanabrook BV, Krebs JJ. Fe adsorption and film growth on GaAs(001) (2×4)-As (abstract) Journal of Applied Physics. 79: 5125. DOI: 10.1063/1.361528 |
0.609 |
|
| 1996 |
Thibado PM, Kneedler E, Jonker BT, Bennett BR, Shanabrook BV, Whitman LJ. Nucleation and growth of Fe on GaAs(001)-(2x4) studied by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 53: R10481-R10484. |
0.509 |
|
| 1996 |
Thibado PM, Mercer TW, Fu S, Egami T, DiNardo NJ, Bonnell DA. Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 1607-1610. |
0.68 |
|
| 1996 |
Whitman LJ, Thibado PM, Linker F, Patrin J. Versatile sample handling system for scanning tunneling microscopy studies of molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 1870-1872. |
0.531 |
|
| 1995 |
Thibado PM, Bennett BR, Twigg ME, Shanabrook BV, Whitman LJ. Origins of interfacial disorder in GaSb/InAs superlattices Applied Physics Letters. 67: 3578. DOI: 10.1063/1.115323 |
0.596 |
|
| 1994 |
Thibado PM, Liang Y, Bonnell DA. Scanning tunneling microscope combined with scanning electron microscope for the study of grain boundaries Review of Scientific Instruments. 65: 3199-3203. DOI: 10.1063/1.1144550 |
0.606 |
|
| 1994 |
Thibado PM, Rohrer GS, Bonnell DA. Experimental and simulated tunneling spectra of the polar ZnO surfaces Surface Science. 318: 379-394. DOI: 10.1016/0039-6028(94)90112-0 |
0.575 |
|
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