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Valeria G. Stoleru

Affiliations: 
Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering
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"Valeria Stoleru"
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Anup Pancholi grad student 2008 University of Delaware

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Pancholi A, Zhang YC, Boyle J, et al. (2011) Quantum dot materials for solar cell applications: Effects of strain-reducing and strain-compensated barriers on dot structural and optical properties Optics Infobase Conference Papers
Pancholi A, Bremner SP, Boyle J, et al. (2010) Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system Solar Energy Materials and Solar Cells. 94: 1025-1030
Pancholi A, Stoleru VG, Kell CD. (2007) A novel technique for synthesizing dense alumina nanostructures Nanotechnology. 18
Zhang YC, Pancholi A, Stoleru VG, et al. (2007) Optical anisotropy of InGaAsGa (As,P) quantum dots grown on GaAs (311)B substrates Applied Physics Letters. 91
Zhang YC, Pancholi A, Stoleru VG. (2007) Size-dependent radiative lifetime in vertically stacked (In,Ga)As quantum dot structures Applied Physics Letters. 90
Kerr W, Stoleru VG, Pancholi A. (2006) Time-integrated photolumlnescence studies of In0.3Ga0.7As/GaAs quantum dot molecules Materials Research Society Symposium Proceedings. 935: 34-39
Kerr WE, Pancholi A, Stoleru VG. (2006) Quantum dot molecules: A potential pathway towards terahertz devices Physica E: Low-Dimensional Systems and Nanostructures. 35: 139-145
Stoleru VG, Towe E, Ni C, et al. (2005) Quantum-dot molecules for potential applications in terahertz devices Materials Research Society Symposium Proceedings. 829: 9-14
Stoleru VG, Towe E. (2005) Plasmon resonant Au nanospheres and nanorods in anodic alumina matrix Proceedings of Spie - the International Society For Optical Engineering. 5592: 382-388
Stoleru VG, Towe E. (2003) Oscillator strength for intraband transitions in (In,Ga)As/GaAs quantum dots Applied Physics Letters. 83: 5026-5028
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