Anup Pancholi, Ph.D.

Affiliations: 
2008 Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering
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"Anup Pancholi"

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Valeria G. Stoleru grad student 2008 University of Delaware
 ((Indium,gallium)arsenide quantum dot materials for solar cell applications: Effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties.)
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Bremner SP, Nataraj L, Cloutier SG, et al. (2011) Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures Solar Energy Materials and Solar Cells. 95: 1665-1670
Pancholi A, Zhang YC, Boyle J, et al. (2011) Quantum dot materials for solar cell applications: Effects of strain-reducing and strain-compensated barriers on dot structural and optical properties Optics Infobase Conference Papers
Pancholi A, Bremner SP, Boyle J, et al. (2010) Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system Solar Energy Materials and Solar Cells. 94: 1025-1030
Bremner SP, Pancholi A, Ghosh K, et al. (2008) Growth of InAs quantum dots on GaAsSb for the realization of a quantum dot solar cell Conference Record of the Ieee Photovoltaic Specialists Conference
Pancholi A, Stoleru VG, Kell CD. (2007) A novel technique for synthesizing dense alumina nanostructures Nanotechnology. 18
Zhang YC, Pancholi A, Stoleru VG, et al. (2007) Optical anisotropy of InGaAsGa (As,P) quantum dots grown on GaAs (311)B substrates Applied Physics Letters. 91
Zhang YC, Pancholi A, Stoleru VG. (2007) Size-dependent radiative lifetime in vertically stacked (In,Ga)As quantum dot structures Applied Physics Letters. 90
Kerr W, Stoleru VG, Pancholi A. (2006) Time-integrated photolumlnescence studies of In0.3Ga0.7As/GaAs quantum dot molecules Materials Research Society Symposium Proceedings. 935: 34-39
Kerr WE, Pancholi A, Stoleru VG. (2006) Quantum dot molecules: A potential pathway towards terahertz devices Physica E: Low-Dimensional Systems and Nanostructures. 35: 139-145
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