Somaia S. Sylvia, Ph.D.
Affiliations: | 2014 | Electrical Engineering | University of California, Riverside, Riverside, CA, United States |
Area:
Electronics and Electrical Engineering, NanotechnologyGoogle:
"Somaia Sylvia"Parents
Sign in to add mentor| Roger K. Lake | grad student | 2014 | UC Riverside | |
| (Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Sylvia SS, Alam K, Lake RK. (2016) Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35 |
| Das P, Yin G, Sylvia SS, et al. (2015) The impact of the ring shaped valence band in few-layer III-VI materials on fet operation 18th International Workshop On Computational Electronics, Iwce 2015 |
| Sylvia SS, Habib KMM, Khayer MA, et al. (2014) Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214 |
| Habib KMM, Sylvia SS, Ge S, et al. (2013) The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite Applied Physics Letters. 103 |
| Sylvia SS, Khayer MA, Alam K, et al. (2012) Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001 |
| Sylvia SS, Park H, Khayer MA, et al. (2012) Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069 |
| Upadhyayula S, Bao D, Millare B, et al. (2011) Permanent electric dipole moments of carboxyamides in condensed media: what are the limitations of theory and experiment? The Journal of Physical Chemistry. B. 115: 9473-90 |
| Sylvia SS, Khayer MA, Alam K, et al. (2011) Design issue analysis for InAs nanowire tunnel FETs Proceedings of Spie. 8102 |