Year |
Citation |
Score |
2016 |
Sylvia SS, Alam K, Lake RK. Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35. DOI: 10.1109/Jxcdc.2016.2619351 |
0.651 |
|
2015 |
Das P, Yin G, Sylvia SS, Alamt K, Wickramaratne D, Lake RK. The impact of the ring shaped valence band in few-layer III-VI materials on fet operation 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301950 |
0.499 |
|
2014 |
Sylvia SS, Habib KMM, Khayer MA, Alam K, Neupane M, Lake RK. Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214. DOI: 10.1109/Ted.2014.2318521 |
0.671 |
|
2013 |
Habib KMM, Sylvia SS, Ge S, Neupane M, Lake RK. The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite Applied Physics Letters. 103. DOI: 10.1063/1.4841415 |
0.517 |
|
2012 |
Sylvia SS, Khayer MA, Alam K, Lake RK. Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001. DOI: 10.1109/Ted.2012.2212442 |
0.668 |
|
2012 |
Sylvia SS, Park H, Khayer MA, Alam K, Klimeck G, Lake RK. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069. DOI: 10.1109/Ted.2012.2200688 |
0.672 |
|
2011 |
Upadhyayula S, Bao D, Millare B, Sylvia SS, Habib KM, Ashraf K, Ferreira A, Bishop S, Bonderer R, Baqai S, Jing X, Penchev M, Ozkan M, Ozkan CS, Lake RK, et al. Permanent electric dipole moments of carboxyamides in condensed media: what are the limitations of theory and experiment? The Journal of Physical Chemistry. B. 115: 9473-90. PMID 21682315 DOI: 10.1021/Jp2045383 |
0.596 |
|
2011 |
Sylvia SS, Khayer MA, Alam K, Lake RK. Design issue analysis for InAs nanowire tunnel FETs Proceedings of Spie. 8102. DOI: 10.1117/12.894249 |
0.679 |
|
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