Leslie G. Vaughn, Ph.D.
Affiliations: | 2006 | University of New Mexico, Albuquerque, NM, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Leslie Vaughn"Mean distance: 26.42 (cluster 16) | S | N | B | C | P |
Parents
Sign in to add mentor| Luke F. Lester | grad student | 2006 | Univ. of New Mexico | |
| (Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells.) | ||||
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Publications
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| Vaughn LG, Dawson LR, Pease EA, et al. (2005) Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells Proceedings of Spie - the International Society For Optical Engineering. 5722: 307-318 |
| Xin YC, Vaughn LG, Dawson LR, et al. (2003) InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135 |
| Pease EA, Dawson LR, Vaughn LG, et al. (2003) 2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AllnSb metamorphic buffer layers Journal of Applied Physics. 93: 3177-3181 |
| Vaughn LG, Ralph L, Xu H, et al. (2002) Characterization of AlInAsSb and AlGaInAsSb MBE-grown Digital Alloys Mrs Proceedings. 744 |
| Vaughn LG, Dawson LR, Xu H, et al. (2002) Characterization of AlInAsSb and AlGaInAsSb MBE-grown digital alloys Materials Research Society Symposium - Proceedings. 744: 397-408 |
| Vaughn LG, Newell TC, Lester LF, et al. (1999) Characterization of GaS-Passivated Quantum-Well Laser Diodes Mrs Proceedings. 573: 125 |
| Vaughn LG, Newell TC, Lester LF, et al. (1999) Characterization of GaS-passivated quantum-well laser diodes Materials Research Society Symposium - Proceedings. 573: 125-130 |