Leslie G. Vaughn, Ph.D. - Publications
Affiliations: | 2006 | University of New Mexico, Albuquerque, NM, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2005 | Vaughn LG, Dawson LR, Pease EA, Lester LF, Xu H, Jiang Y, Gray AL. Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells Proceedings of Spie - the International Society For Optical Engineering. 5722: 307-318. DOI: 10.1117/12.606226 | 0.602 | |||
2003 | Xin YC, Vaughn LG, Dawson LR, Stintz A, Lin Y, Lester LF, Huffaker DL. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135. DOI: 10.1063/1.1582229 | 0.504 | |||
2003 | Pease EA, Dawson LR, Vaughn LG, Rotella P, Lester LF. 2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AllnSb metamorphic buffer layers Journal of Applied Physics. 93: 3177-3181. DOI: 10.1063/1.1544425 | 0.586 | |||
2002 | Vaughn LG, Ralph L, Xu H, Jiang Y, Lester LF. Characterization of AlInAsSb and AlGaInAsSb MBE-grown Digital Alloys Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M7.2 | 0.479 | |||
2002 | Vaughn LG, Dawson LR, Xu H, Jiang Y, Lester LF. Characterization of AlInAsSb and AlGaInAsSb MBE-grown digital alloys Materials Research Society Symposium - Proceedings. 744: 397-408. | 0.415 | |||
1999 | Vaughn LG, Newell TC, Lester LF, Macinnes AN. Characterization of GaS-Passivated Quantum-Well Laser Diodes Mrs Proceedings. 573: 125. DOI: 10.1557/Proc-573-125 | 0.563 | |||
1999 | Vaughn LG, Newell TC, Lester LF, Macinnes AN. Characterization of GaS-passivated quantum-well laser diodes Materials Research Society Symposium - Proceedings. 573: 125-130. | 0.588 | |||
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