Henryk Temkin
Affiliations: | Texas Tech University, Lubbock, TX |
Area:
Electronics and Electrical Engineering, Optics PhysicsGoogle:
"Henryk Temkin"Mean distance: (not calculated yet)
Children
Sign in to add trainee| Gustavo E. Giudice | grad student | 2000 | Texas Tech |
| Georgiy A. Seryogin | grad student | 2000 | Texas Tech |
| Kisik Choi | grad student | 2004 | Texas Tech |
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Publications
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| Gershoni D, Vandenberg JM, Chu SN, et al. (2019) Excitonic transitions in strained-layer InxGa1-xAs/GaAs quantum wells. Physical Review. B, Condensed Matter. 40: 10017-10020 |
| Aurongzeb D, Song DY, Kipshidze G, et al. (2008) Growth of GaN nanowires on epitaxial GaN Journal of Electronic Materials. 37: 1076-1081 |
| Stojanovic N, Yun J, Washington EBK, et al. (2007) Thin-film thermal conductivity measurement using microelectrothermal test structures and finite-element-model-based data analysis Journal of Microelectromechanical Systems. 16: 1269-1275 |
| Chandolu A, Nikishin S, Holtz M, et al. (2007) X-ray diffraction study of AlNAlGaN short period superlattices Journal of Applied Physics. 102 |
| Datta A, Gangopadhyay S, Temkin H, et al. (2006) Nanofluidic channels by anodic bonding of amorphous silicon to glass to study ion-accumulation and ion-depletion effect. Talanta. 68: 659-65 |
| Nikishin SA, Borisov BA, Kuryatkov VV, et al. (2006) Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy Materials Research Society Symposium Proceedings. 892: 13-18 |
| Borisov BA, Nikishin SN, Kuryatkov VV, et al. (2006) Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy Semiconductors. 40: 454-458 |
| Yun J, Choi K, Mathur K, et al. (2006) Low-resistance ohmic contacts to digital alloys of n-AlGaN/AlN Ieee Electron Device Letters. 27: 22-24 |
| Aurongzeb D, Washington E, Basavaraj M, et al. (2006) Nanoscale surface roughening in ultrathin aluminum films Journal of Applied Physics. 100 |
| Aurongzeb D, Ram KB, Holtz M, et al. (2006) Formation of nickel nanodots on GaN Journal of Applied Physics. 99 |