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Collin K. Mui, Ph.D. - Publications

Affiliations: 
2003 Stanford University, Palo Alto, CA 
Area:
surface and interfacial chemistry and materials synthesis
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Mui C, Musgrave CB. Initial nitridation of the Ge(100)-2 x 1 surface by ammonia. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 5230-2. PMID 15896076 DOI: 10.1021/La0470840  0.788
2004 Mui C, Bent SF, Musgrave CB. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces. The Journal of Physical Chemistry. B. 108: 6336-50. PMID 18950120 DOI: 10.1021/Jp037948A  0.746
2004 Mui C, Senosiain JP, Musgrave CB. Initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide. Langmuir : the Acs Journal of Surfaces and Colloids. 20: 7604-9. PMID 15323508 DOI: 10.1021/La0498410  0.809
2004 Mui C, Bent SF, Musgrave CB. Quantum chemistry based statistical mechanical model of hydrogen desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe alloy surfaces Journal of Physical Chemistry B. 108: 18243-18253. DOI: 10.1021/Jp0379493  0.778
2004 Mui C, Musgrave CB. Atomic layer deposition of HfO 2 using alkoxides as precursors Journal of Physical Chemistry B. 108: 15150-15164. DOI: 10.1021/Jp037507R  0.581
2004 Mui C, Widjaja Y, Kang JK, Musgrave CB. Surface reaction mechanisms for atomic layer deposition of silicon nitride Surface Science. 557: 159-170. DOI: 10.1016/J.Susc.2004.03.029  0.8
2003 Filler MA, Mui C, Musgrave CB, Bent SF. Competition and selectivity in the reaction of nitriles on ge(100)-2x1. Journal of the American Chemical Society. 125: 4928-36. PMID 12696912 DOI: 10.1021/Ja027887E  0.798
2003 Mui C, Filler MA, Bent SF, Musgrave CB. Reactions of nitriles at semiconductor surfaces Journal of Physical Chemistry B. 107: 12256-12267. DOI: 10.1021/Jp034864T  0.836
2003 Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J  0.82
2002 Wang GT, Mui C, Musgrave CB, Bent SF. Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1. Journal of the American Chemical Society. 124: 8990-9004. PMID 12137555 DOI: 10.1021/Ja026330W  0.821
2002 Mui C, Han JH, Wang GT, Musgrave CB, Bent SF. Proton transfer reactions on semiconductor surfaces. Journal of the American Chemical Society. 124: 4027-38. PMID 11942841 DOI: 10.1021/Ja0171512  0.826
2001 Mui C, Wang GT, Bent SF, Musgrave CB. Reactions of methylamines at the Si(100)-2×1 surface Journal of Chemical Physics. 114: 10170-10180. DOI: 10.1063/1.1370056  0.841
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2 × 1 Journal of Physical Chemistry B. 105: 12559-12565. DOI: 10.1021/Jp013058O  0.834
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 × Journal of Physical Chemistry B. 105: 3295-3299. DOI: 10.1021/Jp004298R  0.792
2000 Kong MJ, Teplyakov AV, Jagmohan J, Lyubovitsky JG, Mui C, Bent SF. Interaction of Ce cyclic hydrocarbons with a Si(100)-2×1 surface: Adsorption and hydrogenation reactions Journal of Physical Chemistry B. 104: 3000-3007. DOI: 10.1021/Jp992875+  0.795
1999 Wang GT, Mui C, Musgrave CB, Bent SF. Cycloaddition of Cyclopentadiene and Dicyclopentadiene on Si(100)-2x1: Comparison of Monomer and Dimer Adsorption Journal of Physical Chemistry B. 103: 6803-6808. DOI: 10.1021/Jp991528X  0.811
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