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Atsushi Kawamoto, Ph.D. - Publications

Affiliations: 
2001 Stanford University, Palo Alto, CA 
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Haverty M, Kawamoto A, Cho K, Dutton R. First-principles study of transition-metal aluminates as high-k gate dielectrics Applied Physics Letters. 80: 2669-2671. DOI: 10.1063/1.1467979  0.659
2001 Haverty M, Kawamoto A, Jun G, Cho K, Dutton R. Preliminary first principles study of Hf and Zr aluminates as replacement high-k dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K3.2  0.63
2001 Kawamoto A, Jameson J, Griffin P, Cho K, Dutton R. Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculations Ieee Electron Device Letters. 22: 14-16. DOI: 10.1109/55.892429  0.62
2001 Kawamoto A, Cho K, Griffin P, Dutton R. First principles investigation of scaling trends of zirconium silicate interface band offsets Journal of Applied Physics. 90: 1333-1341. DOI: 10.1063/1.1378338  0.632
2001 Kawamoto A, Cho K, Dutton R. Perspective paper: First principles modeling of high-k gate dielectrics Journal of Computer-Aided Materials Design. 8: 39-57. DOI: 10.1023/A:1015011207910  0.648
2000 Kawamoto A, Jameson J, Cho K, Dutton RW. Challenges for atomic scale modeling in alternative gate stack engineering Ieee Transactions On Electron Devices. 47: 1787-1794. DOI: 10.1109/16.870549  0.401
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