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David A. Buell, Ph.D. - Publications

Affiliations: 
2005 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Buell DA, Feezell D, Finland BO, Coldren L. Molecular beam epitaxy of InP-based alloys for long-wavelength vertical cavity lasers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1544-1547. DOI: 10.1116/1.2200380  0.769
2006 Mehta M, Feezell D, Buell DA, Jackson AW, Coldren LA, Bowers JH. Electrical design optimization of single-mode tunnel-junction-based long-wavelength VCSELs Ieee Journal of Quantum Electronics. 42: 675-682. DOI: 10.1109/Jqe.2006.876713  0.703
2006 Feezell D, Buell DA, Lofgreen D, Mehta M, Coldren LA. Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers Ieee Journal of Quantum Electronics. 42: 494-499. DOI: 10.1109/Jqe.2006.874007  0.78
2006 Sahni S, Yablonovitch E, Buell D, Coldren L. Optically pumped Silicon laser based on evanescent coupling of Si micro-disk to III-V DBR stack Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627685  0.308
2005 Feezell D, Johansson LA, Buell DA, Coldren LA. Efficient modulation of InP-based 1.3-μm VCSELs with AsSb-based DBRs Ieee Photonics Technology Letters. 17: 2253-2255. DOI: 10.1109/Lpt.2005.857216  0.696
2005 Feezell D, Buell DA, Coldren LA. InP-based 1.3-1.6-μm VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform Ieee Photonics Technology Letters. 17: 2017-2019. DOI: 10.1109/Lpt.2005.854357  0.73
2005 Feezell D, Buell DA, Johansson LA, Coldren LA. High differential efficiency (>60%) continuous-wave operation of 1.3μm InP-based VCSELs with Sb-based DBRs Device Research Conference - Conference Digest, Drc. 2005: 2. DOI: 10.1109/DRC.2005.1553156  0.621
2005 Feezell D, Buell DA, Coldren LA. Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiency Electronics Letters. 41: 803-804. DOI: 10.1049/El:20051827  0.75
2004 Reddy MHM, Asano T, Feezell D, Buell DA, Huntington AS, Koda R, Coldren LA. Selectively etched tunnel junction for lateral current and optical confinement InP-based vertical cavity lasers Journal of Electronic Materials. 33: 118-122. DOI: 10.1007/S11664-004-0280-X  0.807
2003 Asano T, Feezell D, Koda R, Reddy MHM, Buell DA, Huntington AS, Hall E, Nakagawa S, Coldren LA. InP-based all-epitaxial 1.3-μm VCSELs with selectivity etched AlInAs apertures and Sb-based DBRs Ieee Photonics Technology Letters. 15: 1333-1335. DOI: 10.1109/Lpt.2003.817987  0.789
2003 Reddy MHM, Buell DA, Feezell D, Asano T, Koda R, Huntington AS, Coldren LA. Continuous-wave operation of 1.55-μm vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices Ieee Photonics Technology Letters. 15: 891-893. DOI: 10.1109/Lpt.2003.813405  0.775
2003 Reddy MHM, Buell DA, Huntington AS, Asano T, Koda R, Feezell D, Lofgreen D, Coldren LA. Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices Applied Physics Letters. 82: 1329-1331. DOI: 10.1063/1.1554485  0.724
2003 Reddy MHM, Buell DA, Asano T, Koda R, Feezell D, Huntington AS, Coldren LA. Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs Journal of Crystal Growth. 251: 766-770. DOI: 10.1016/S0022-0248(02)02389-8  0.776
2002 Reddy MHM, Buell DA, Huntington AS, Koda R, Freezell D, Asano T, Jim JK, Hall E, Nakagawa S, Coldren LA. Current status of epitaxial 1.31-1.55 μm VCSELs on InP Leos Summer Topical Meeting. 2002: 58-59. DOI: 10.1109/LEOSST.2002.1027623  0.789
2002 Reddy MHM, Huntington A, Buell D, Koda R, Hall E, Coldren LA. Molecular-beam epitaxy growth of high-quality active regions with strained In xGa 1-xAs quantum wells and lattice-matched Al xGa yIn (1-x-y)As barriers using submonolayer superlattices Applied Physics Letters. 80: 3509-3511. DOI: 10.1063/1.1474598  0.744
2002 Reddy MHM, Asano T, Koda R, Buell DA, Coldren LA. Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs Electronics Letters. 38: 1181-1182. DOI: 10.1049/El:20020796  0.661
2001 Nakagawa S, Hall E, Almuneau G, Kim JK, Buell DA, Kroemer H, Coldren LA. 1.55-μm InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs Ieee Journal On Selected Topics in Quantum Electronics. 7: 224-230. DOI: 10.1109/2944.954134  0.724
2001 Nakagawa S, Hall E, Almuneau G, Kim JK, Buell DA, Kroemer H, Coldren LA. 88 °C, continuous-wave operation of a pertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers Applied Physics Letters. 78: 1337-1339. DOI: 10.1063/1.1352668  0.718
2001 Buell DA, Huntington AS, Koda R, Hall E, Nakagawa S, Reddy M, Coldren LA. InP-based 1310-1550 nm lattice-matched VCSELs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 447-448.  0.771
2000 Nakagawa S, Hall E, Almuneau G, Kim JK, Buell DA, Kroemer H, Coldren LA. 1.55μm, double-intracavity contacted, InP-lattice-matched VCSELs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 726-727.  0.338
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