| Year |
Citation |
Score |
| 2020 |
Behzadirad M, Rishinaramangalam AK, Feezell D, Busani T, Reuter C, Reum A, Holz M, Gotszalk T, Mechold S, Hofmann M, Ahmad A, Ivanov T, Rangelow IW. Field emission scanning probe lithography with GaN nanowires on active cantilevers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32806. DOI: 10.1116/1.5137901 |
0.322 |
|
| 2020 |
Rashidi A, Rishinaramangalam AK, Aragon AA, Mishkat-Ul-Masabih S, Monavarian M, Lee C, Denbaars SP, Feezell DF. High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth Ieee Photonics Technology Letters. 32: 383-386. DOI: 10.1109/Lpt.2020.2976060 |
0.458 |
|
| 2020 |
Aragon A, Monavarian M, Stricklin I, Pickrell G, Crawford M, Allerman A, Armstrong AM, Feezell D. Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes Physica Status Solidi (a). 217: 1900757. DOI: 10.1002/Pssa.201900757 |
0.309 |
|
| 2019 |
Rashidi A, Monavarian M, Aragon A, Feezell D. Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements. Scientific Reports. 9: 19921. PMID 31882667 DOI: 10.1038/S41598-019-56390-2 |
0.387 |
|
| 2019 |
Mishkat-Ul-Masabih SM, Luk TS, Monavarian M, Feezell DF. Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors. Optics Express. 27: 9495-9501. PMID 31045100 DOI: 10.1364/Oe.27.009495 |
0.545 |
|
| 2019 |
Ranga P, Rishinaramangalam A, Varley J, Bhattacharyya A, Feezell D, Krishnamoorthy S. Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 12: 111004. DOI: 10.7567/1882-0786/Ab47B8 |
0.306 |
|
| 2019 |
Mishkat-Ul-Masabih SM, Aragon AA, Monavarian M, Luk TS, Feezell DF. Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors Applied Physics Express. 12: 36504. DOI: 10.7567/1882-0786/Ab0576 |
0.473 |
|
| 2019 |
Monavarian M, Pickrell G, Aragon AA, Stricklin I, Crawford MH, Allerman AA, Celio KC, Leonard F, Talin AA, Armstrong AM, Feezell D. High-Voltage Regrown Nonpolar
${m}$
-Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches Ieee Electron Device Letters. 40: 387-390. DOI: 10.1109/Led.2019.2892345 |
0.355 |
|
| 2019 |
Nami M, Rashidi A, Monavarian M, Mishkat-Ul-Masabih S, Rishinaramangalam AK, Brueck SRJ, Feezell D. Electrically Injected GHz-Class GaN/InGaN Core–ShellNanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity Acs Photonics. 6: 1618-1625. DOI: 10.1021/Acsphotonics.9B00639 |
0.399 |
|
| 2018 |
Okur S, Rishinaramangalam AK, Mishkat Ul Masabih S, Nami M, Liu S, Brener I, Brueck SRJ, Feezell D. Spectrally-Resolved Internal Quantum Efficiency and Carrier Dynamics of Semipolar (101 ̅1) Core-Shell Triangular Nanostripe GaN/InGaN LEDs. Nanotechnology. PMID 29557788 DOI: 10.1088/1361-6528/Aab82E |
0.411 |
|
| 2018 |
Behzadirad M, Nami M, Wostbrock N, Zamani Kouhpanji MR, Feezell DF, Brueck SRJ, Busani T. Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate. Acs Nano. PMID 29401381 DOI: 10.1021/Acsnano.7B07653 |
0.477 |
|
| 2018 |
Nami M, Stricklin IE, DaVico KM, Mishkat-Ul-Masabih S, Rishinaramangalam AK, Brueck SRJ, Brener I, Feezell DF. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. Scientific Reports. 8: 501. PMID 29323163 DOI: 10.1038/S41598-017-18833-6 |
0.468 |
|
| 2018 |
Lenk C, Hofmann M, Ivanov T, Ahmad A, Lenk S, Rangelow IW, Reum A, Reuter C, Holz M, Behzadirad M, Rishinaramangalam AK, Feezell D, Busani T. Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36. DOI: 10.1116/1.5048190 |
0.352 |
|
| 2018 |
Rashidi A, Monavarian M, Aragon A, Rishinaramangalam A, Feezell D. Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth Ieee Electron Device Letters. 39: 520-523. DOI: 10.1109/Led.2018.2803082 |
0.449 |
|
| 2018 |
Rashidi A, Monavarian M, Aragon A, Feezell D. Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar ( 20 2 ¯ 1 ¯) InGaN/GaN light-emitting diodes Applied Physics Letters. 113: 031101. DOI: 10.1063/1.5036761 |
0.42 |
|
| 2018 |
Monavarian M, Rashidi A, Aragon AA, Nami M, Oh SH, DenBaars SP, Feezell D. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes Applied Physics Letters. 112: 191102. DOI: 10.1063/1.5032115 |
0.437 |
|
| 2018 |
Monavarian M, Rashidi A, Aragon AA, Oh SH, Rishinaramangalam AK, DenBaars SP, Feezell D. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes Applied Physics Letters. 112: 41104. DOI: 10.1063/1.5019730 |
0.422 |
|
| 2018 |
Mishkat-Ul-Masabih S, Luk TS, Rishinaramangalam A, Monavarian M, Nami M, Feezell D. Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN Applied Physics Letters. 112: 41109. DOI: 10.1063/1.5016083 |
0.436 |
|
| 2018 |
Feezell D, Nakamura S. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting Comptes Rendus Physique. 19: 113-133. DOI: 10.1016/J.Crhy.2017.12.001 |
0.315 |
|
| 2017 |
Okur S, Nami M, Rishinaramangalam AK, Oh SH, DenBaars SP, Liu S, Brener I, Feezell DF. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. Optics Express. 25: 2178-2186. PMID 29519065 DOI: 10.1364/Oe.25.002178 |
0.433 |
|
| 2017 |
Monavarian M, Rashidi A, Aragon A, Oh SH, Nami M, DenBaars SP, Feezell D. Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients. Optics Express. 25: 19343-19353. PMID 29041128 DOI: 10.1364/Oe.25.019343 |
0.391 |
|
| 2017 |
Behzadirad M, Nami M, Rishinaramagalam AK, Feezell DF, Busani T. GaN nanowire tips for nanoscale atomic force microscopy. Nanotechnology. 28: 20LT01. PMID 28387216 DOI: 10.1088/1361-6528/Aa6C0B |
0.303 |
|
| 2017 |
Li C, Wright JB, Liu S, Lu P, Figiel JJ, Leung B, Chow WW, Brener I, Koleske DD, Luk TS, Feezell DF, Brueck SR, Wang GT. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers. Nano Letters. PMID 28118019 DOI: 10.1021/Acs.Nanolett.6B04483 |
0.504 |
|
| 2017 |
Lee S, Mishkat-Ul-Masabih S, Leonard JT, Feezell DF, Cohen DA, Speck JS, Nakamura S, DenBaars SP. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser Applied Physics Express. 10: 11001. DOI: 10.7567/Apex.10.011001 |
0.47 |
|
| 2017 |
Rashidi A, Monavarian M, Aragon A, Okur S, Nami M, Rishinaramangalam A, Mishkat-Ul-Masabih S, Feezell D. High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication Ieee Photonics Technology Letters. 29: 381-384. DOI: 10.1109/Lpt.2017.2650681 |
0.413 |
|
| 2017 |
Rashidi A, Nami M, Monavarian M, Aragon A, DaVico K, Ayoub F, Mishkat-Ul-Masabih S, Rishinaramangalam A, Feezell D. Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes Journal of Applied Physics. 122: 35706. DOI: 10.1063/1.4994648 |
0.367 |
|
| 2017 |
Mishkat-Ul-Masabih S, Leonard J, Cohen D, Nakamura S, Feezell D. Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs Physica Status Solidi (a). 214: 1600819. DOI: 10.1002/Pssa.201600819 |
0.408 |
|
| 2017 |
Rishinaramangalam AK, Nami M, Shima DM, Balakrishnan G, Brueck SRJ, Feezell DF. Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers Physica Status Solidi (a). 214: 1600776. DOI: 10.1002/Pssa.201600776 |
0.407 |
|
| 2016 |
Nami M, Eller RF, Okur S, Rishinaramangalam AK, Liu S, Brener I, Feezell DF. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy. Nanotechnology. 28: 025202. PMID 27905321 DOI: 10.1088/0957-4484/28/2/025202 |
0.419 |
|
| 2016 |
Rishinaramangalam AK, Nami M, Fairchild MN, Shima DM, Balakrishnan G, Brueck SRJ, Feezell DF. Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire Applied Physics Express. 9. DOI: 10.7567/Apex.9.032101 |
0.379 |
|
| 2016 |
Behzadirad M, Dawson N, Nami M, Rishinaramangalam AK, Feezell DF, Busani TL. GaN nanowire tip for high aspect ratio nano-scale AFM metrology(Conference Presentation) Proceedings of Spie. 9927. DOI: 10.1117/12.2237892 |
0.336 |
|
| 2015 |
Li C, Wright JB, Liu S, Lu P, Figiel JJ, Leung B, Luk TS, Brener I, Feezell D, Brueck SRJ, Wang GT. Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers Cleo: Science and Innovations, Cleo-Si 2015. 2267. DOI: 10.1364/CLEO_SI.2015.SM2F.2 |
0.321 |
|
| 2015 |
Rishinaramangalam AK, Nami M, Bryant BN, Eller RF, Shima DM, Fairchild MN, Balakrishnan G, Brueck SRJ, Feezell DF. Ordered arrays of bottom-up III-nitride core-shell nanostructures Proceedings of Spie - the International Society For Optical Engineering. 9553. DOI: 10.1117/12.2191726 |
0.316 |
|
| 2015 |
Feezell DF. Status and future of GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2079503 |
0.559 |
|
| 2015 |
Kazemi A, Nami M, Kim JO, Allen MS, Allen JW, Wenner BR, Brown DP, Urbas A, Feezell D, Mitchell B, Krishna S. Investigation of plasmonic enhancement in a quantum dot-in-a-well structure Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2076227 |
0.385 |
|
| 2015 |
Nami M, Feezell D. Optical properties of Ag-coated GaN/InGaN axial and core–shell nanowire light-emitting diodes Journal of Optics. 17: 025004. DOI: 10.1088/2040-8978/17/2/025004 |
0.356 |
|
| 2015 |
Li C, Wright JB, Liu S, Lu P, Figiel JJ, Leung B, Luk TS, Brener I, Feezell D, Brueck SRJ, Wang GT. Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015. |
0.321 |
|
| 2014 |
Nami M, Feezell DF. Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires. Optics Express. 22: 29445-55. PMID 25606879 DOI: 10.1364/Oe.22.029445 |
0.424 |
|
| 2014 |
Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927 |
0.497 |
|
| 2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, DenBaars SP, Nakamura S, Feezell DF. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] Applied Physics Letters. 105: 89902. DOI: 10.1063/1.4894638 |
0.458 |
|
| 2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, Denbaars SP, Nakamura S, Feezell DF. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching Applied Physics Letters. 105. DOI: 10.1063/1.4890864 |
0.495 |
|
| 2014 |
Rishinaramangalam AK, Ul Masabih SM, Fairchild MN, Wright JB, Shima DM, Balakrishnan G, Brener I, Brueck SRJ, Feezell DF. Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices Journal of Electronic Materials. DOI: 10.1007/S11664-014-3456-Z |
0.363 |
|
| 2014 |
Nami M, Rishinaramangalam A, Feezell D. Analysis of light extraction efficiency for gallium nitride-based coaxial microwall light-emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 766-770. DOI: 10.1002/Pssc.201300456 |
0.316 |
|
| 2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.397 |
|
| 2013 |
Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104 |
0.413 |
|
| 2013 |
Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277 |
0.543 |
|
| 2013 |
Rishinaramangalam AK, Fairchild MN, Hersee SD, Balakrishnan G, Feezell DF. Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792519 |
0.367 |
|
| 2013 |
Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/Jdt.2012.2227682 |
0.425 |
|
| 2013 |
Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171 |
0.541 |
|
| 2013 |
Feezell D, Sharma Y, Krishna S. Optical properties of nonpolar III-nitrides for intersubband photodetectors Journal of Applied Physics. 113. DOI: 10.1063/1.4798353 |
0.409 |
|
| 2013 |
Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042 |
0.438 |
|
| 2012 |
Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103 |
0.417 |
|
| 2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.371 |
|
| 2012 |
Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100 |
0.334 |
|
| 2012 |
Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850 |
0.485 |
|
| 2012 |
Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.367 |
|
| 2012 |
Huang CY, Alam Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells Cleo: Science and Innovations, Cleo_si 2012. CTu2N.5. |
0.385 |
|
| 2012 |
Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2021 Cleo: Science and Innovations, Cleo_si 2012. CTu2N.2. |
0.362 |
|
| 2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.302 |
|
| 2012 |
Huang CY, Zhao Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.385 |
|
| 2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.302 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/Apex.4.092105 |
0.518 |
|
| 2011 |
Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104 |
0.419 |
|
| 2011 |
Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791 |
0.485 |
|
| 2011 |
Zhao Y, Tanaka S, Yan Q, Huang C, Chung RB, Pan C, Fujito K, Feezell D, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] Applied Physics Letters. 99: 229902. DOI: 10.1063/1.3665683 |
0.354 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3657149 |
0.481 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Schmidt MC, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3656970 |
0.43 |
|
| 2011 |
Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560 |
0.402 |
|
| 2011 |
Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826 |
0.425 |
|
| 2011 |
Hardy MT, Feezell DF, Denbaars SP, Nakamura S. Group III-nitride lasers: A materials perspective Materials Today. 14: 408-415. DOI: 10.1016/S1369-7021(11)70185-7 |
0.41 |
|
| 2011 |
Feezell D, Speck J, Denbaars S, Nakamura S. Optoelectronic devices grown on nonpolar and semipolar free-standing GaN substrates 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011. |
0.337 |
|
| 2010 |
Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Kebort D, Chang YC, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.849713 |
0.78 |
|
| 2010 |
Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.840783 |
0.711 |
|
| 2009 |
Feezell DF, Schmidt MC, DenBaars SP, Nakamura S. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes Mrs Bulletin. 34: 318-323. DOI: 10.1557/Mrs2009.93 |
0.359 |
|
| 2008 |
Tyagi A, Zhong H, Chung RB, Feezell DF, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2108-2110. DOI: 10.1002/Pssc.200778460 |
0.533 |
|
| 2007 |
Farrell RM, Feezell DF, Schmidt MC, Haeger DA, Kelchner KM, Iso K, Yamada H, Saito M, Fujito K, Cohen DA, Speck JS, Denbaars SP, Nakamura S. Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L761-L763. DOI: 10.1143/Jjap.46.L761 |
0.546 |
|
| 2007 |
Tyagi A, Zhong H, Chung RB, Feezell DF, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates Japanese Journal of Applied Physics, Part 2: Letters. 46: L444-L445. DOI: 10.1143/Jjap.46.L444 |
0.477 |
|
| 2007 |
Feezell DF, Schmidt MC, Farrell RM, Kim KC, Saito M, Fujito K, Cohen DA, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L284-L286. DOI: 10.1143/Jjap.46.L284 |
0.576 |
|
| 2007 |
Schmidt MC, Kim KC, Farrell RM, Feezell DF, Cohen DA, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L190-L191. DOI: 10.1143/Jjap.46.L190 |
0.479 |
|
| 2007 |
Feezell DF, DenBaars SP, Speck JS, Nakamura S. Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 174-177. DOI: 10.1109/CSICS07.2007.47 |
0.416 |
|
| 2007 |
Feezell DF, Farrell RM, Schmidt MC, Yamada H, Ishida M, Denbaars SP, Cohen DA, Nakamura S. Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers Applied Physics Letters. 90. DOI: 10.1063/1.2736478 |
0.506 |
|
| 2007 |
Feezell D, Nakamura S, Denbaars S, Speck J. Nonpolar gallium nitride laser diodes are the next new blue Laser Focus World. 43: 79-84. |
0.447 |
|
| 2006 |
Buell DA, Feezell D, Finland BO, Coldren L. Molecular beam epitaxy of InP-based alloys for long-wavelength vertical cavity lasers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1544-1547. DOI: 10.1116/1.2200380 |
0.761 |
|
| 2006 |
Mehta M, Feezell D, Buell DA, Jackson AW, Coldren LA, Bowers JH. Electrical design optimization of single-mode tunnel-junction-based long-wavelength VCSELs Ieee Journal of Quantum Electronics. 42: 675-682. DOI: 10.1109/Jqe.2006.876713 |
0.706 |
|
| 2006 |
Feezell D, Buell DA, Lofgreen D, Mehta M, Coldren LA. Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers Ieee Journal of Quantum Electronics. 42: 494-499. DOI: 10.1109/Jqe.2006.874007 |
0.788 |
|
| 2005 |
Feezell D, Johansson LA, Buell DA, Coldren LA. Efficient modulation of InP-based 1.3-μm VCSELs with AsSb-based DBRs Ieee Photonics Technology Letters. 17: 2253-2255. DOI: 10.1109/Lpt.2005.857216 |
0.713 |
|
| 2005 |
Feezell D, Buell DA, Coldren LA. InP-based 1.3-1.6-μm VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform Ieee Photonics Technology Letters. 17: 2017-2019. DOI: 10.1109/Lpt.2005.854357 |
0.743 |
|
| 2005 |
Feezell D, Buell DA, Johansson LA, Coldren LA. High differential efficiency (>60%) continuous-wave operation of 1.3μm InP-based VCSELs with Sb-based DBRs Device Research Conference - Conference Digest, Drc. 2005: 2. DOI: 10.1109/DRC.2005.1553156 |
0.65 |
|
| 2005 |
Feezell D, Buell DA, Coldren LA. Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiency Electronics Letters. 41: 803-804. DOI: 10.1049/El:20051827 |
0.761 |
|
| 2004 |
Reddy MHM, Asano T, Feezell D, Buell DA, Huntington AS, Koda R, Coldren LA. Selectively etched tunnel junction for lateral current and optical confinement InP-based vertical cavity lasers Journal of Electronic Materials. 33: 118-122. DOI: 10.1007/S11664-004-0280-X |
0.811 |
|
| 2003 |
Asano T, Feezell D, Koda R, Reddy MHM, Buell DA, Huntington AS, Hall E, Nakagawa S, Coldren LA. InP-based all-epitaxial 1.3-μm VCSELs with selectivity etched AlInAs apertures and Sb-based DBRs Ieee Photonics Technology Letters. 15: 1333-1335. DOI: 10.1109/Lpt.2003.817987 |
0.792 |
|
| 2003 |
Reddy MHM, Buell DA, Feezell D, Asano T, Koda R, Huntington AS, Coldren LA. Continuous-wave operation of 1.55-μm vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices Ieee Photonics Technology Letters. 15: 891-893. DOI: 10.1109/Lpt.2003.813405 |
0.776 |
|
| 2003 |
Reddy MHM, Buell DA, Huntington AS, Asano T, Koda R, Feezell D, Lofgreen D, Coldren LA. Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices Applied Physics Letters. 82: 1329-1331. DOI: 10.1063/1.1554485 |
0.73 |
|
| 2003 |
Reddy MHM, Buell DA, Asano T, Koda R, Feezell D, Huntington AS, Coldren LA. Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs Journal of Crystal Growth. 251: 766-770. DOI: 10.1016/S0022-0248(02)02389-8 |
0.782 |
|
| Show low-probability matches. |