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Ho-Chul Lim, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Kim JH, Yoon SY, Kim KH, Lim HB, Kim HJ, Yang H. Electroluminescence from two I-III-VI quantum dots of A-Ga-S (A=Cu, Ag). Optics Letters. 43: 5287-5290. PMID 30382989  0.326
2018 Lim HJ, Kim AR, Yoon MY, You Y, Chua B, Son A. Development of quantum dot aptasensor and its portable analyzer for the detection of di-2-ethylhexyl phthalate. Biosensors & Bioelectronics. 121: 1-9. PMID 30189334 DOI: 10.1016/j.bios.2018.08.065  0.31
2018 Mohamed NB, Shinokita K, Wang X, Lim HE, Tan D, Miyauchi Y, Matsuda K. Photoluminescence quantum yields for atomically thin-layered ReS2: Identification of indirect-bandgap semiconductors Applied Physics Letters. 113: 121112. DOI: 10.1063/1.5037116  0.399
2017 Mohamed NB, Wang F, Lim HE, Zhang W, Koirala S, Mouri S, Miyauchi Y, Matsuda K. Evaluation of photoluminescence quantum yield of monolayer WSe2using reference dye of 3-borylbithiophene derivative Physica Status Solidi (B). 254: 1600563. DOI: 10.1002/PSSB.201600563  0.442
2016 Lee CM, Lim HJ, Lee M, Schneider C, Maier S, Höfling S, Kamp M, Lee YH. Microfiber-microcavity system for efficient single photon collection. Optics Express. 24: 23471-23480. PMID 27828410  0.302
2008 Tsao S, Lim H, Seo H, Zhang W, Razeghi M. InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging Ieee Sensors Journal. 8: 936-941. DOI: 10.1109/Jsen.2008.923940  0.798
2007 Tsao S, Lim H, Zhang W, Razeghi M. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array Proceedings of Spie. 6593. DOI: 10.1117/12.719691  0.797
2007 Tsao S, Lim H, Zhang W, Razeghi M. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector Applied Physics Letters. 90: 201109. DOI: 10.1063/1.2740111  0.774
2007 Lim H, Tsao S, Zhang W, Razeghi M. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature Applied Physics Letters. 90: 131112. DOI: 10.1063/1.2719160  0.798
2006 Lim H, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing Advances in Science and Technology. 51: 201-208. DOI: 10.4028/Www.Scientific.Net/Ast.51.201  0.781
2006 Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors Physical Review B. 74. DOI: 10.1103/Physrevb.74.205321  0.736
2006 Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition Applied Physics Letters. 88: 121102. DOI: 10.1063/1.2188056  0.774
2005 Razeghi M, Lim H, Tsao S, Szafraniec J, Zhang W, Mi K, Movaghar B. Transport and photodetection in self-assembled semiconductor quantum dots. Nanotechnology. 16: 219-29. PMID 21727426 DOI: 10.1088/0957-4484/16/2/007  0.706
2005 Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M. Quantum dot infrared photodetectors: Comparison of experiment and theory Physical Review B. 72. DOI: 10.1103/Physrevb.72.085332  0.764
2005 Zhang W, Lim H, Taguchi M, Tsao S, Movaghar B, Razeghi M. High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Applied Physics Letters. 86: 191103. DOI: 10.1063/1.1923176  0.792
2004 Jiang J, Tsao S, O'Sullivan T, Zhang W, Lim H, Sills T, Mi K, Razeghi M, Brown GJ, Tidrow MZ. High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. 84: 2166-2168. DOI: 10.1063/1.1688982  0.791
2004 Jiang J, Mi K, Tsao S, Zhang W, Lim H, O'Sullivan T, Sills T, Razeghi M, Brown GJ, Tidrow MZ. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors Applied Physics Letters. 84: 2232-2234. DOI: 10.1063/1.1688000  0.77
1997 Lee JK, Cho YH, Choe BD, Kim KS, Jeon HI, Lim H, Razeghi M. Schottky barrier heights and conduction-band offsets of In1−xGaxAs1−yPy lattice matched to GaAs Applied Physics Letters. 71: 912-914. DOI: 10.1063/1.119686  0.462
1996 Kwon SD, Lim H, Shin HK, Choe B. Influence of carrier flow on the temperature‐dependent capacitance‐voltage profiles of heterojunction structures Applied Physics Letters. 69: 2740-2742. DOI: 10.1063/1.117696  0.31
1995 Kwon HK, Kwon SD, Kim I, Lee JB, Choe B, Lim H. Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy Journal of Applied Physics. 77: 512-516. DOI: 10.1063/1.359033  0.36
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