☰

Marco Saraniti - Publications

Affiliations: 
Illinois Institute of Technology, Chicago, IL, United States 
Area:
Electronics and Electrical Engineering, Biochemistry
Tree Info Similar researchers PubMed Report error

74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Merrill K, Saraniti M. Nonlinear Electro-Thermal Monte Carlo Device Simulation Journal of Heat Transfer-Transactions of the Asme. 142. DOI: 10.1115/1.4045305  0.428
2020 Sabatti FFM, Goodnick SM, Saraniti M. Particle-Based Modeling of Electron–Phonon Interactions Journal of Heat Transfer-Transactions of the Asme. 142. DOI: 10.1115/1.4045137  0.311
2019 Latorre-Rey AD, Merrill K, Albrecht JD, Saraniti M. Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs Ieee Transactions On Electron Devices. 66: 908-916. DOI: 10.1109/Ted.2018.2888812  0.424
2018 Rey ADL, Albrecht JD, Saraniti M. A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs Ieee Transactions On Electron Devices. 65: 4263-4270. DOI: 10.1109/Ted.2018.2863746  0.47
2017 Sabatti FFM, Goodnick SM, Saraniti M. Simulation of Phonon Transport in Semiconductors Using a Population-Dependent Many-Body Cellular Monte Carlo Approach Journal of Heat Transfer-Transactions of the Asme. 139: 32002. DOI: 10.1115/1.4035042  0.389
2017 Soligo R, Sabatti F, Chowdhury S, Saraniti M. Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449. DOI: 10.1109/Ted.2017.2756085  0.443
2017 Latorre-Rey AD, Sabatti FFM, Albrecht JD, Saraniti M. Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors Applied Physics Letters. 111: 13506. DOI: 10.1063/1.4991665  0.395
2016 Hathwar R, Saraniti M, Goodnick SM. Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation Journal of Applied Physics. 120. DOI: 10.1063/1.4959881  0.362
2015 Popescu B, Popescu D, Saraniti M, Lugli P. Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis Ieee Transactions On Electron Devices. 62: 1848-1854. DOI: 10.1109/Ted.2015.2424403  0.484
2015 Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922  0.406
2014 Soligo R, Saraniti M, Goodnick SM. Terahertz devices and device modeling Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2049599  0.422
2014 Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ. Avalanche breakdown in SOI MESFETs Solid-State Electronics. 91: 78-80. DOI: 10.1016/J.Sse.2013.10.003  0.39
2012 Goodnick SM, Saraniti M. Modeling and simulation of terahertz devices Ieee Microwave Magazine. 13: 36-44. DOI: 10.1109/Mmm.2012.2216098  0.308
2011 Guerra D, Marino FA, Goodnick S, Ferry D, Saraniti M. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations International Journal of High Speed Electronics and Systems. 20: 423-430. DOI: 10.1142/S0129156411006714  0.451
2011 Guerra D, Saraniti M, Ferry DK, Goodnick SM, Marino FA. Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs Ieee Transactions On Electron Devices. 58: 3876-3884. DOI: 10.1109/Ted.2011.2164407  0.435
2010 Guerra D, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Marino FA. Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations Ieee Transactions On Electron Devices. 57: 3348-3354. DOI: 10.1109/Ted.2010.2076151  0.428
2010 Marino FA, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Guerra D. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study Ieee Transactions On Electron Devices. 57: 2579-2586. DOI: 10.1109/Ted.2010.2058791  0.448
2010 Marino FA, Faralli N, Palacios T, Ferry DK, Goodnick SM, Saraniti M. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors Ieee Transactions On Electron Devices. 57: 353-360. DOI: 10.1109/Ted.2009.2035024  0.496
2010 Guerra D, Akis R, Marino FA, Ferry DK, Goodnick SM, Saraniti M. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs Ieee Electron Device Letters. 31: 1217-1219. DOI: 10.1109/Led.2010.2066954  0.461
2010 Marino FA, Cullen DA, Smith DJ, McCartney MR, Saraniti M. Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography Journal of Applied Physics. 107: 054516. DOI: 10.1063/1.3311555  0.476
2010 Joshi P, Smolyanitsky A, Petrossian L, Goryll M, Saraniti M, Thornton TJ. Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array Journal of Applied Physics. 107. DOI: 10.1063/1.3298468  0.342
2010 Marino FA, Guerra D, Goodnick S, Ferry D, Saraniti M. RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2445-2449. DOI: 10.1002/Pssc.200983887  0.511
2010 Akis R, Faralli N, Goodnick SM, Ferry DK, Saraniti M. Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2502-2505. DOI: 10.1002/Pssc.200983856  0.37
2009 Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM. Rigid ion model of high field transport in GaN. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174206. PMID 21825410 DOI: 10.1088/0953-8984/21/17/174206  0.375
2009 Akis R, Faralli N, Ferry DK, Goodnick SM, Phatak KA, Saraniti M. Ballistic transport in InP-based HEMTs Ieee Transactions On Electron Devices. 56: 2935-2944. DOI: 10.1109/Ted.2009.2033167  0.433
2009 Smolyanitsky A, Saraniti M. Silicon nanopores as bioelectronic devices: a simulation study Journal of Computational Electronics. 8: 90-97. DOI: 10.1007/S10825-009-0275-1  0.451
2008 Akis R, Ayubi-Moak JS, Ferry DK, Goodnick SM, Faralli N, Saraniti M. Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384201. PMID 21693809 DOI: 10.1088/0953-8984/20/38/384201  0.435
2008 Akis R, Ayubi-Moak JS, Faralli N, Ferry DK, Goodnick SM, Saraniti M. The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length Ieee Electron Device Letters. 29: 306-308. DOI: 10.1109/Led.2008.918391  0.441
2008 Vitobello F, Faralli N, Yamakawa S, Goodnick SM, Saraniti M. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT Journal of Computational Electronics. 7: 244-247. DOI: 10.1007/S10825-008-0215-5  0.496
2008 Ayubi-Moak JS, Akis R, Ferry DK, Goodnick S, Faralli N, Saraniti M. Towards the global modeling of InGaAs-based pseudomorphic HEMTs Journal of Computational Electronics. 7: 187-191. DOI: 10.1007/S10825-008-0207-5  0.473
2008 Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick SM. Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs Physica Status Solidi (C). 5: 135-138. DOI: 10.1002/Pssc.200776577  0.473
2007 Goodnick SM, Saraniti M. Cellular Monte Carlo simulation of high field transport in semiconductor devices International Journal of High Speed Electronics and Systems. 17: 465-473. DOI: 10.1142/S0129156407004655  0.518
2007 Ayubi-Moak JS, Ferry DK, Goodnick SM, Akis R, Saraniti M. Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator Ieee Transactions On Electron Devices. 54: 2327-2338. DOI: 10.1109/Ted.2007.902902  0.546
2007 Marreiro D, Saraniti M, Aboud S. Brownian dynamics simulation of charge transport in ion channels Journal of Physics: Condensed Matter. 19: 215203. DOI: 10.1088/0953-8984/19/21/215203  0.72
2007 Marreiro D, Tang Y, Aboud S, Jakobsson E, Saraniti M. Improving the efficiency of BD algorithms for biological systems simulations Journal of Computational Electronics. 6: 377-380. DOI: 10.1007/S10825-006-0129-Z  0.714
2006 Beysserie S, Branlard J, Aboud S, Goodnick SM, Saraniti M. Comparative analysis of SOI and GOI MOSFETs Ieee Transactions On Electron Devices. 53: 2545-2550. DOI: 10.1109/Ted.2006.882272  0.727
2006 Faralli N, Markandeya H, Branlard J, Saraniti M, Goodnick SM, Ferry DK. Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors Journal of Computational Electronics. 5: 483-486. DOI: 10.1007/S10825-006-0061-2  0.507
2006 Saraniti M, Aboud S, Branlard J, Goodnick SM. Particle-based simulation: An algorithmic perspective Journal of Computational Electronics. 5: 405-410. DOI: 10.1007/S10825-006-0030-9  0.461
2006 Ayubi-Moak JS, Goodnick SM, Saraniti M. Global modeling of high frequency devices Journal of Computational Electronics. 5: 415-418. DOI: 10.1007/S10825-006-0028-3  0.416
2006 Saraniti M, Aboud S, Eisenberg R. The Simulation of Ionic Charge Transport in Biological Ion Channels: An Introduction to Numerical Methods Reviews in Computational Chemistry. 22: 229-293. DOI: 10.1002/0471780367.Ch4  0.431
2005 Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS, Saraniti M, Wong D, Schmidt JJ, Montemagno CD. Ion channels on silicon E-Journal of Surface Science and Nanotechnology. 3. DOI: 10.1380/Ejssnt.2005.184  0.318
2005 Yamakawa S, Goodnick SM, Branlard J, Saraniti M. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo Physica Status Solidi C: Conferences. 2: 2573-2576. DOI: 10.1002/Pssc.200461525  0.401
2004 Goryll M, Wilk S, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang JM, Eisenberg RS. Ion Channel Sensor on a Silicon Support Mrs Proceedings. 820. DOI: 10.1557/Proc-820-O7.2  0.331
2004 Branlard J, Aboud S, Osuch P, Goodnick SM, Saraniti M. Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations Monte Carlo Methods and Applications. 10: 227-233. DOI: 10.1515/Mcma.2004.10.3-4.227  0.491
2004 Goodnick SM, Saraniti M, Vasileska D, Aboud S. Particle-based methods in computational electronics Ieee Potentials. 23: 12-16. DOI: 10.1109/Mp.2004.1301239  0.526
2004 Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Influence of the electron-phonon interaction on electron transport in wurtzite GaN Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/156  0.333
2004 Aboud S, Saraniti M, Goodnick S, Brodschelm A, Leitenstorfer A. Full-band Monte Carlo simulations of photo excitation in silicon diode structures Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/101  0.498
2004 Wilk SJ, Goryll M, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang J, Eisenberg RS. Teflon ™-coated silicon apertures for supported lipid bilayer membranes Applied Physics Letters. 85: 3307-3309. DOI: 10.1063/1.1805712  0.303
2004 Aboud S, Marreiro D, Saraniti M, Eisenberg R. A poisson P3M force field scheme for particle-based simulations of ionic liquids Journal of Computational Electronics. 3: 117-133. DOI: 10.1007/S10825-004-0316-8  0.72
2004 Beysserie S, Aboud S, Goodnick S, Thornton T, Saraniti M. Full-band particle-based simulation of SOI and GOI MOSFETs Physica Status Solidi (B) Basic Research. 241: 2297-2302. DOI: 10.1002/Pssb.200404940  0.733
2003 Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method Journal of Computational Electronics. 2: 481-485. DOI: 10.1023/B:Jcel.0000011475.74817.6E  0.501
2003 Aboud S, Saraniti M, Eisenberg R. Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations Journal of Computational Electronics. 2: 239-243. DOI: 10.1023/B:Jcel.0000011431.17843.A6  0.466
2003 Branlard J, Aboud S, Goodnick S, Saraniti M. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations Journal of Computational Electronics. 2: 213-217. DOI: 10.1023/B:Jcel.0000011427.63034.4E  0.472
2003 Ayubi-Moak JS, Goodnick S, Aboud SJ, Saraniti M, El-Ghazaly S. Coupling Maxwell's Equations to Full Band Particle-Based Simulators Journal of Computational Electronics. 2: 183-190. DOI: 10.1023/B:Jcel.0000011422.05617.F1  0.452
2003 Saraniti M, Tang J, Goodnick SM, Wigger SJ. Numerical challenges in particle-based approaches for the simulation of semiconductor devices Mathematics and Computers in Simulation. 62: 501-508. DOI: 10.1016/S0378-4754(02)00229-X  0.521
2003 Goryll M, Wilk S, Laws GM, Thornton T, Goodnick S, Saraniti M, Tang J, Eisenberg RS. Silicon-based ion channel sensor Superlattices and Microstructures. 34: 451-457. DOI: 10.1016/J.Spmi.2004.03.041  0.327
2002 Formicone G, Saraniti M, Vasileska D, Ferry D. Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer Ieee Transactions On Electron Devices. 49: 125-132. DOI: 10.1109/16.974759  0.397
2002 Saraniti M, Hu Y, Goodnick SM. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP Vlsi Design. 15: 743-750. DOI: 10.1080/1065514021000012354  0.474
2002 Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors Journal of Computational Electronics. 1: 475-480. DOI: 10.1023/A:1022945122145  0.519
2002 Formicone G, Saraniti M, Ferry DK. Journal of Computational Electronics. 1: 251-255. DOI: 10.1023/A:1020793912240  0.391
2002 Saraniti M, Tang J, Goodnick S, Wigger S. Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors Journal of Computational Electronics. 1: 215-218. DOI: 10.1023/A:1020777508605  0.45
2002 Saraniti M, Hu Y, Goodnick SM, Wigger SJ. Overshoot velocity in ultra-broadband THz studies in GaAs and InP Physica B: Condensed Matter. 314: 162-165. DOI: 10.1016/S0921-4526(01)01377-1  0.442
2001 Wigger SJ, Goodnick SM, Saraniti M. Hybrid Particle-based Full-band Analysis of Ultra-small MOS Vlsi Design. 13: 125-129. DOI: 10.1155/2001/94360  0.468
2000 Saraniti M, Goodnick SM. Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors Ieee Transactions On Electron Devices. 47: 1909-1916. DOI: 10.1109/16.870571  0.397
2000 Wigger SJ, Goodnick SM, Saraniti M. Full-band CA/Monte Carlo modeling of ultrasmall FETs Superlattices and Microstructures. 27: 417-420. DOI: 10.1006/Spmi.2000.0860  0.394
1998 Saraniti M, Zandler G, Formicone GF, Goodnick SM. Cellular Automata Studies of Vertical Silicon Devices Vlsi Design. 8: 111-115. DOI: 10.1155/1998/89897  0.422
1998 Zandler G, Oberhuber R, Liebig D, Vogl P, Saraniti M, Lugli P. Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes Vlsi Design. 8: 93-98. DOI: 10.1155/1998/39048  0.36
1998 Saraniti M, Zandler G, Formicone G, Wigger S, Goodnick S. Cellular automata simulation of nanometre-scale MOSFETs Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/050  0.441
1996 Saraniti M, Rein A, Zandler G, Vogl P, Lugli P. An efficient multigrid Poisson solver for device simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 15: 141-150. DOI: 10.1109/43.486661  0.489
1994 Gruzinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Response functions in submicrometre n+nn+ diode generators Semiconductor Science and Technology. 9: 564-566. DOI: 10.1088/0268-1242/9/5S/044  0.326
1993 Gruzhinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors Semiconductor Science and Technology. 8: 1283-1290. DOI: 10.1088/0268-1242/8/7/016  0.332
1992 Zanoni E, Tedesco C, Manfredi M, Saraniti M, Lugli P. Hot-carrier-induced photon emission in submicron GaAs devices Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/142  0.318
1992 Gruzhinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Hydrodynamic analysis of submicrometer n+nn+ diodes for microwave generators Applied Physics Letters. 61: 1456-1458. DOI: 10.1063/1.107516  0.429
1990 Lugli P, Neviani A, Saraniti M. Physical models for heterostructure FET simulation European Transactions On Telecommunications. 1: 447-456. DOI: 10.1002/Ett.4460010413  0.418
Show low-probability matches.