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Richard Beeler, Ph.D. - Publications

Affiliations: 
2012 Chemistry Arizona State University, Tempe, AZ, United States 
Area:
Materials Science Engineering, Inorganic Chemistry, Condensed Matter Physics
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35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Claflin B, Kiefer AM, Beeler RT, Fang ZQ, Grzybowski G. Characterization of Ge1-x-ySixSny ternary alloys - Comparison of UHV-CVD and gas source MBE growth Ecs Transactions. 64: 801-810. DOI: 10.1149/06406.0801ecst  0.666
2014 Harris TR, Yeo YK, Ryu MY, Beeler RT, Kouvetakis J. Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) Journal of Applied Physics. 116. DOI: 10.1063/1.4894870  0.599
2014 Xu C, Beeler RT, Jiang L, Gallagher JD, Favaro R, Menéndez J, Kouvetakis J. Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices Thin Solid Films. 557: 177-182. DOI: 10.1016/J.Tsf.2013.08.043  0.751
2014 Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J. Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Current Applied Physics. 14: S123-S128. DOI: 10.1016/J.Cap.2013.11.009  0.736
2013 Sims PE, Chizmeshya AV, Jiang L, Beeler RT, Poweleit CD, Gallagher J, Smith DJ, Menéndez J, Kouvetakis J. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties. Journal of the American Chemical Society. 135: 12388-99. PMID 23899409 DOI: 10.1021/Ja405726B  0.684
2013 Beeler RT, Gallagher J, Xu C, Jiang L, Senaratne CL, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.034309Jss  0.702
2013 Jiang L, Sims PE, Grzybowski G, Beeler RT, Chizmeshya AVG, Smith DJ, Kouvetakis J, Menéndez J. Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045208  0.816
2013 Xu C, Beeler RT, Jiang L, Grzybowski G, Chizmeshya AVG, Menéndez J, Kouvetakis J. New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105001  0.816
2013 Ryu MY, Harris TR, Yeo YK, Beeler RT, Kouvetakis J. Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content Applied Physics Letters. 102. DOI: 10.1063/1.4803927  0.696
2012 Xu C, Beeler RT, Grzybowski GJ, Chizmeshya AV, Smith DJ, Menéndez J, Kouvetakis J. Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn. Journal of the American Chemical Society. 134: 20756-67. PMID 23237361 DOI: 10.1021/Ja309894C  0.836
2012 Grzybowski G, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties Ecs Transactions. 50: 865-874. DOI: 10.1149/05009.0865ecst  0.826
2012 Chizmeshya AVG, Kouvetakis J, Grzybowski G, Beeler R, Menendez J. Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors Ecs Transactions. 50: 623-634. DOI: 10.1149/05009.0623ecst  0.732
2012 Beeler RT, Menéndez J, Smith DJ, Kouvetakis J. High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys Ecs Transactions. 50: 591-599. DOI: 10.1149/05009.0591ecst  0.736
2012 Beeler RT, Smith DJ, Kouvetakis J, Menéndez J. GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms Ieee Journal of Photovoltaics. 2: 434-440. DOI: 10.1109/Jphotov.2012.2206568  0.756
2012 Beeler RT, Xu C, Smith DJ, Grzybowski G, Menéndez J, Kouvetakis J. Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4 Applied Physics Letters. 101. DOI: 10.1063/1.4768217  0.815
2012 Ryu MY, Yeo YK, Ahoujja M, Harris T, Beeler R, Kouvetakis J. Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate Applied Physics Letters. 101. DOI: 10.1063/1.4754625  0.654
2012 Grzybowski G, Beeler RT, Jiang L, Smith DJ, Kouvetakis J, Menéndez J. Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission Applied Physics Letters. 101. DOI: 10.1063/1.4745770  0.812
2012 Kouvetakis J, Chizmeshya AVG, Jiang L, Watkins T, Grzybowski G, Beeler RT, Poweleit C, Menéndez J. Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si Chemistry of Materials. 24: 3219-3230. DOI: 10.1021/Cm301616S  0.822
2012 Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100) Chemistry of Materials. 24: 2347-2355. DOI: 10.1021/Cm300761R  0.815
2012 Grzybowski G, Jiang L, Beeler RT, Watkins T, Chizmeshya AVG, Xu C, Menéndez J, Kouvetakis J. Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10) Chemistry of Materials. 24: 1619-1628. DOI: 10.1021/Cm3002404  0.816
2012 Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menendez J. ChemInform Abstract: Synthesis and Properties of Monocrystalline Al(As1-xPx)Si3Alloys on Si(100). Cheminform. 43: no-no. DOI: 10.1002/CHIN.201241007  0.775
2012 Kouvetakis J, Beeler R, Menendez J. Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD Information Optoelectronics, Nanofabrication and Testing, Iont 2012.  0.603
2011 Watkins T, Chizmeshya AV, Jiang L, Smith DJ, Beeler RT, Grzybowski G, Poweleit CD, Menéndez J, Kouvetakis J. Nanosynthesis routes to new tetrahedral crystalline solids: silicon-like Si3AlP. Journal of the American Chemical Society. 133: 16212-8. PMID 21877711 DOI: 10.1021/Ja206738V  0.822
2011 Roucka R, Mathews J, Weng C, Beeler R, Tolle J, Menéndez J, Kouvetakis J. High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon Ieee Journal of Quantum Electronics. 47: 213-222. DOI: 10.1109/Jqe.2010.2077273  0.788
2011 Grzybowski G, Roucka R, Mathews J, Jiang L, Beeler RT, Kouvetakis J, Menéndez J. Direct versus indirect optical recombination in Ge films grown on Si substrates Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205307  0.787
2011 Bagchi S, Poweleit CD, Beeler RT, Kouvetakis J, Menéndez J. Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.193201  0.59
2011 Beeler R, Roucka R, Chizmeshya AVG, Kouvetakis J, Menéndez J. Nonlinear structure-composition relationships in the Ge 1-ySny/Si(100) (y<0.15) system Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035204  0.66
2011 Grzybowski G, Jiang L, Mathews J, Roucka R, Xu C, Beeler RT, Kouvetakis J, Meńndez J. Photoluminescence from heavily doped GeSn:P materials grown on Si(100) Applied Physics Letters. 99. DOI: 10.1063/1.3655679  0.804
2011 Roucka R, Beeler R, Mathews J, Ryu MY, Kee Yeo Y, Menéndez J, Kouvetakis J. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) Journal of Applied Physics. 109. DOI: 10.1063/1.3592965  0.72
2011 Roucka R, Mathews J, Beeler RT, Tolle J, Kouvetakis J, Meńndez J. Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes Applied Physics Letters. 98. DOI: 10.1063/1.3554747  0.628
2011 Beeler RT, Grzybowski GJ, Roucka R, Jiang L, Mathews J, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices Chemistry of Materials. 23: 4480-4486. DOI: 10.1021/Cm201648X  0.824
2010 Beeler R, Weng C, Tolle J, Roucka R, Mathews J, Ahmari DA, Menéndez J, Kouvetakis J. Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy Ecs Transactions. 33: 941-950. DOI: 10.1149/1.3487626  0.794
2010 Mathews J, Roucka R, Weng C, Beeler R, Tolle J, Menéndéz J, Kouvetakis J. Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon Ecs Transactions. 33: 765-773. DOI: 10.1149/1.3487607  0.756
2010 Mathews J, Beeler RT, Tolle J, Xu C, Roucka R, Kouvetakis J, Meńndez J. Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon Applied Physics Letters. 97. DOI: 10.1063/1.3521391  0.684
2010 Beeler R, Mathews J, Weng C, Tolle J, Roucka R, Chizmeshya AVG, Juday R, Bagchi S, Menndez J, Kouvetakis J. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Solar Energy Materials and Solar Cells. 94: 2362-2370. DOI: 10.1016/J.Solmat.2010.08.016  0.792
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