Year |
Citation |
Score |
2014 |
Miao T, Yeom S, Wang P, Standley B, Bockrath M. Graphene nanoelectromechanical systems as stochastic-frequency oscillators. Nano Letters. 14: 2982-7. PMID 24742005 DOI: 10.1021/Nl403936A |
0.62 |
|
2012 |
Bao W, Velasco J, Zhang F, Jing L, Standley B, Smirnov D, Bockrath M, MacDonald AH, Lau CN. Evidence for a spontaneous gapped state in ultraclean bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. 109: 10802-5. PMID 22685212 DOI: 10.1073/Pnas.1205978109 |
0.647 |
|
2012 |
Zhang H, Bao W, Zhao Z, Huang JW, Standley B, Liu G, Wang F, Kratz P, Jing L, Bockrath M, Lau CN. Visualizing electrical breakdown and ON/OFF states in electrically switchable suspended graphene break junctions. Nano Letters. 12: 1772-5. PMID 22429115 DOI: 10.1021/Nl203160X |
0.681 |
|
2012 |
Standley B, Mendez A, Schmidgall E, Bockrath M. Graphene-graphite oxide field-effect transistors. Nano Letters. 12: 1165-9. PMID 22380722 DOI: 10.1021/Nl2028415 |
0.672 |
|
2011 |
Yeh NC, Teague ML, Wu RTP, Yeom S, Standley BL, Boyd DA, Bockrath MW. Nano-scale strain-induced giant pseudo-magnetic fields and charging effects in CVD-grown graphene on copper Ecs Transactions. 35: 161-172. DOI: 10.1149/1.3569908 |
0.661 |
|
2011 |
Bao W, Jing L, Velasco J, Lee Y, Liu G, Tran D, Standley B, Aykol M, Cronin SB, Smirnov D, Koshino M, McCann E, Bockrath M, Lau CN. Stacking-dependent band gap and quantum transport in trilayer graphene Nature Physics. DOI: 10.1038/Nphys2103 |
0.687 |
|
2011 |
Yeh NC, Teague ML, Yeom S, Standley BL, Wu RTP, Boyd DA, Bockrath MW. Strain-induced pseudo-magnetic fields and charging effects on CVD-grown graphene Surface Science. 605: 1649-1656. DOI: 10.1016/J.Susc.2011.03.025 |
0.698 |
|
2008 |
Standley B, Bao W, Zhang H, Bruck J, Lau CN, Bockrath M. Graphene-based atomic-scale switches. Nano Letters. 8: 3345-9. PMID 18729415 DOI: 10.1021/Nl801774A |
0.677 |
|
Low-probability matches (unlikely to be authored by this person) |
2005 |
Huff HR, Myers D, Walden M, Beckwith L, Weaver N, Celler G, Standley B, Bulsara MT. Starting materials and functional layers for the 2005 international technology roadmap for semiconductors: Challenges and opportunities Aip Conference Proceedings. 788: 39-50. DOI: 10.1063/1.2062937 |
0.241 |
|
2016 |
Otte M, Aßmus D, Biedermann C, Bozhenkov S, Bräuer T, Dudek A, Geiger J, Kocsis G, Lazerson S, Pedersen TS, Schauer F, Szepesi T, Standley B. Setup and initial results from the magnetic flux surface diagnostics at Wendelstein 7-X Plasma Physics and Controlled Fusion. 58. DOI: 10.1088/0741-3335/58/6/064003 |
0.133 |
|
2006 |
Bulsara M, Celler G, White T, Standley B, Huff H. Roadmap requirements for emerging materials Solid State Technology. 49: 34-38. |
0.131 |
|
2004 |
Bulsara M, Standley B, Celler G, Myers D, Huff H. International Sematech tackles emerging materials Solid State Technology. 47. |
0.075 |
|
2002 |
Quarles JB, Meyer WB, Standley BC. After the flood Civil Engineering. 72: 66-71. |
0.03 |
|
Hide low-probability matches. |