| Year |
Citation |
Score |
| 2020 |
Floyd R, Hussain K, Mamun A, Gaevski M, Simin G, Chandrashekhar M, Khan A. Photonics integrated circuits using Al x Ga1−x N based UVC light-emitting diodes, photodetectors and waveguides Applied Physics Express. 13: 022003. DOI: 10.7567/1882-0786/Ab6410 |
0.32 |
|
| 2020 |
Gaevski M, Mollah S, Hussain K, Letton J, Mamun A, Jewel MU, Chandrashekhar M, Simin G, Khan A. Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1 Applied Physics Express. 13: 94002. DOI: 10.35848/1882-0786/Abb1C8 |
0.377 |
|
| 2020 |
Mollah S, Hussain K, Floyd R, Mamun A, Gaevski M, Chandrashekhar M, Ahmad I, Simin G, Wheeler V, Eddy C, Khan A. High‐Temperature Operation of Al
x
Ga
1−
x
N (
x
> 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐
k
Atomic Layer Deposited Gate Oxides Physica Status Solidi (a). 217: 1900802. DOI: 10.1002/Pssa.201900802 |
0.36 |
|
| 2020 |
Floyd R, Hussain K, Mamun A, Gaevski M, Simin G, Chandrashekhar M, Khan A. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices Physica Status Solidi (a). 217: 1900801. DOI: 10.1002/Pssa.201900801 |
0.324 |
|
| 2019 |
Mollah S, Gaevski M, Hussain K, Mamun A, Floyd R, Hu X, Chandrashekhar MVS, Simin G, Khan A. Current collapse in high-Al channel AlGaN HFETs Applied Physics Express. 12: 074001. DOI: 10.7567/1882-0786/Ab24B1 |
0.437 |
|
| 2019 |
Mollah S, Gaevski M, Chandrashekhar M, Hu X, Wheeler V, Hussain K, Mamun A, Floyd R, Ahmad I, Simin G, Eddy C, Khan A. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric Semiconductor Science and Technology. 34: 125001. DOI: 10.1088/1361-6641/Ab4781 |
0.391 |
|
| 2019 |
Jewel MU, Alam MD, Mollah S, Hussain K, Wheeler V, Eddy C, Gaevski M, Simin G, Chandrashekhar M, Khan A. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence Applied Physics Letters. 115: 213502. DOI: 10.1063/1.5125776 |
0.47 |
|
| 2018 |
Hu X, Hwang S, Hussain K, Floyd R, Mollah S, Asif F, Simin G, Khan A. Doped Barrier Al 0.65 Ga 0.35 N/Al 0.40 Ga 0.60 N MOSHFET With SiO 2 Gate-Insulator and Zr-Based Ohmic Contacts Ieee Electron Device Letters. 39: 1568-1571. DOI: 10.1109/Led.2018.2866027 |
0.501 |
|
| 2018 |
Cywiński G, Yahniuk I, Kruszewski P, Grabowski M, Nowakowski-Szkudlarek K, Prystawko P, Sai P, Knap W, Simin GS, Rumyantsev SL. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications Applied Physics Letters. 112: 133502. DOI: 10.1063/1.5023391 |
0.406 |
|
| 2017 |
Muhtadi S, Hwang SM, Coleman A, Asif F, Simin G, Chandrashekhar M, Khan A. High Electron Mobility Transistors With Al 0.65 Ga 0.35 N Channel Layers on Thick AlN/Sapphire Templates Ieee Electron Device Letters. 38: 914-917. DOI: 10.1109/Led.2017.2701651 |
0.456 |
|
| 2017 |
Chava VSN, Barker BG, Balachandran A, Khan A, Simin G, Greytak AB, Chandrashekhar MVS. High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor Applied Physics Letters. 111: 243504. DOI: 10.1063/1.5009003 |
0.352 |
|
| 2016 |
Islam M, Simin G. Bulk Current Model for GaN-on-Si High Electron Mobility Transistors International Journal of High Speed Electronics and Systems. 25: 1640002. DOI: 10.1142/S0129156416400024 |
0.409 |
|
| 2016 |
Islam M, Simin G. Compact Model for Current Collapse in GaN-HEMT Power Switches International Journal of High Speed Electronics and Systems. 25: 1640001. DOI: 10.1142/S0129156416400012 |
0.498 |
|
| 2015 |
Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M. Novel AlInN/GaN integrated circuits operating up to 500 °C Solid-State Electronics. 113: 22-27. DOI: 10.1016/J.Sse.2015.05.007 |
0.405 |
|
| 2014 |
Simin GS, Islam M, Gaevski M, Deng J, Gaska R, Shur MS. Low RC-constant perforated-channel HFET Ieee Electron Device Letters. 35: 449-451. DOI: 10.1109/Led.2014.2304726 |
0.459 |
|
| 2014 |
Gaevski M, Deng J, Gaska R, Shur M, Simin G. GaN microwave varactors with insulated electrodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 853-856. DOI: 10.1002/Pssc.201300667 |
0.482 |
|
| 2014 |
Gaevski M, Deng J, Dobrinsky A, Gaska R, Shur M, Simin G. Static and transient characteristics of GaN power HFETs with low-conducting coating Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 866-870. DOI: 10.1002/Pssc.201300541 |
0.494 |
|
| 2013 |
Jahan F, Yang YH, Gaevski M, Deng J, Gaska R, Shur M, Simin G. 2-to 20-GHz switch using III-nitride capacitively coupled contact varactors Ieee Electron Device Letters. 34: 208-210. DOI: 10.1109/Led.2012.2231396 |
0.708 |
|
| 2013 |
Simin G, Jahan F, Yang J, Gaevski M, Hu X, Deng J, Gaska R, Shur M. III-nitride microwave control devices and ICs Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074008 |
0.684 |
|
| 2012 |
Jahan F, Gaevski M, Deng J, Gaska R, Shur M, Simin G. RF power limiter using capacitively-coupled contacts III-nitride varactor Electronics Letters. 48: 1480-1481. DOI: 10.1049/El.2012.3428 |
0.71 |
|
| 2011 |
Simin G, Wang J, Khan B, Yang J, Sattu A, Gaska R, Shur M. Novel approaches to microwave switching devices using nitride technology International Journal of High Speed Electronics and Systems. 20: 219-227. DOI: 10.1142/S0129156411006556 |
0.819 |
|
| 2011 |
Khan BM, Simin GS. Contact and channel 3rd-order nonlinearity in III-N HFETs Ieee Transactions On Electron Devices. 58: 1957-1962. DOI: 10.1109/Ted.2011.2143415 |
0.355 |
|
| 2011 |
Sattu AK, Yang J, Gaska R, Khan MB, Shur M, Simin G. Small- and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design Ieee Microwave and Wireless Components Letters. 21: 305-307. DOI: 10.1109/Lmwc.2011.2138686 |
0.828 |
|
| 2011 |
Sattu A, Deng J, Billingsley D, Yang J, Shur M, Gaska R, Simin G. Enhanced power and breakdown in III-N RF switches with a slow gate Ieee Electron Device Letters. 32: 749-751. DOI: 10.1109/Led.2011.2126557 |
0.839 |
|
| 2011 |
Khan BM, Simin GS. Third-order nonlinearity compensation in field effect transistors Electronics Letters. 47: 1343-1345. DOI: 10.1049/El.2011.2839 |
0.399 |
|
| 2011 |
Sattu A, Billingsley D, Deng J, Yang J, Simin G, Shur M, Gaska R. Low-loss AlInN/GaN microwave switch Electronics Letters. 47: 863-865. DOI: 10.1049/El.2011.1010 |
0.816 |
|
| 2010 |
Sattu A, Yang J, Shur M, Gaska R, Simin G. AlGaN/GaN microwave switch with hybrid slow and fast gate design Ieee Electron Device Letters. 31: 1389-1391. DOI: 10.1109/Led.2010.2073676 |
0.826 |
|
| 2010 |
Deng J, Yang J, Hu X, Gaska R, Khan B, Simin G, Shur M. Insertion loss and linearity of III-nitride microwave switches Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2423-2425. DOI: 10.1002/Pssc.200983898 |
0.519 |
|
| 2009 |
Simin G, Shur MS, Gaska R. 5-Terminal THz GaN based transistor with field- and space-charge control electrodes International Journal of High Speed Electronics and Systems. 19: 7-14. DOI: 10.1142/S0129156409006047 |
0.515 |
|
| 2009 |
Wang B, Tipirneni N, Riva M, Monti A, Simin G, Santi E. An efficient high-frequency drive circuit for GaN power HFETs Ieee Transactions On Industry Applications. 45: 843-853. DOI: 10.1109/Tia.2009.2013578 |
0.809 |
|
| 2009 |
Simin G, Khan B, Wang J, Koudymov A, Gaevski M, Jain R, Yang J, Hu X, Gaska R, Shur M. Multigate GaN RF switches with capacitively coupled contacts Ieee Electron Device Letters. 30: 895-897. DOI: 10.1109/Led.2009.2025675 |
0.736 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284 |
0.768 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. RF transmission line method for wide-bandgap heterostructures Ieee Electron Device Letters. 30: 433-435. DOI: 10.1109/Led.2009.2016358 |
0.69 |
|
| 2009 |
Simin G, Koudymov A, Yang Z, Hu X, Yang J, Shur M, Gaska R. Cryogenic RF switch using III-nitride MOSHFETs Electronics Letters. 45: 207-208. DOI: 10.1049/El:20092562 |
0.729 |
|
| 2009 |
Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R. Maximum powers of low-loss series-shunt FET RF switches Solid-State Electronics. 53: 117-119. DOI: 10.1016/J.Sse.2008.11.009 |
0.459 |
|
| 2008 |
Koudymov A, Shur MS, Simin G, Chu K, Chao PC, Lee C, Jimenez J, Balistreri A. Analytical HFET I-V model in presence of current collapse Ieee Transactions On Electron Devices. 55: 712-720. DOI: 10.1109/Ted.2007.915092 |
0.713 |
|
| 2008 |
Yang Z, Wang J, Hu X, Yang J, Simin G, Shur M, Gaska R. Current crowding in high performance low-loss HFET RF switches Ieee Electron Device Letters. 29: 15-17. DOI: 10.1109/Led.2007.911621 |
0.498 |
|
| 2008 |
Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G. Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Solid-State Electronics. 52: 1217-1220. DOI: 10.1016/J.Sse.2008.05.010 |
0.748 |
|
| 2007 |
Tipirneni N, Adivarahan V, Simin G, Khan A. Silicon dioxide-encapsulated high-voltage AlGaN/GaN HFETs for power-switching applications Ieee Electron Device Letters. 28: 784-786. DOI: 10.1109/Led.2007.903910 |
0.828 |
|
| 2007 |
Koudymov A, Shur MS, Simin G. Compact model of current collapse in heterostructure field-effect transistors Ieee Electron Device Letters. 28: 332-335. DOI: 10.1109/Led.2007.895389 |
0.738 |
|
| 2007 |
Adivarahan V, Gaevski M, Koudymov A, Yang J, Simin G, Khan MA. Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET Ieee Electron Device Letters. 28: 192-194. DOI: 10.1109/Led.2007.891386 |
0.529 |
|
| 2007 |
Koudymov A, Wang CX, Adivarahan V, Yang J, Simin G, Khan MA. Power stability of AlGaN/GaN HFETs at 20 W/mm in the pinched-off operation mode Ieee Electron Device Letters. 28: 5-7. DOI: 10.1109/Led.2006.887642 |
0.743 |
|
| 2007 |
Simin G, Yang Z-. RF-Enhanced Contacts to Wide-Bandgap Devices Ieee Electron Device Letters. 28: 2-4. DOI: 10.1109/Led.2006.887627 |
0.516 |
|
| 2007 |
Koudymov AN, Shur MS, Simin GS. Current collapse and reliability mechanisms in GaN HEMTs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422464 |
0.664 |
|
| 2007 |
Koudymov A, Shur MS, Simin G, Gaska R. Current collapse and reliability of III-N heterostructure field effect transistors Physica Status Solidi - Rapid Research Letters. 1: 116-118. DOI: 10.1002/Pssr.200701047 |
0.68 |
|
| 2006 |
Rai S, Adivarahan V, Tipirneni N, Koudymov A, Yang J, Simin G, Khan MA. Low threshold-14 W/mm ZrO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 4985-4987. DOI: 10.1143/Jjap.45.4985 |
0.839 |
|
| 2006 |
Simin G, Khan MA, Shur MS, Gaska R. High-power switching using III-Nitride metal-oxide-semiconductor heterostructures International Journal of High Speed Electronics and Systems. 16: 455-468. DOI: 10.1142/S0129156406003783 |
0.501 |
|
| 2006 |
Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA. The 1.6-kV AlGaN/GaN HFETs Ieee Electron Device Letters. 27: 716-718. DOI: 10.1109/Led.2006.881084 |
0.827 |
|
| 2006 |
Simin G, Yang ZJ, Koudymov A, Adivarahan V, Yang J, Asif Khan M. III-nitride transistors with capacitively coupled contacts Applied Physics Letters. 89. DOI: 10.1063/1.2234725 |
0.724 |
|
| 2006 |
Adivarahan V, Rai S, Tipirneni N, Koudymov A, Yang J, Simin G, Khan MA. Digital oxide deposition of SiO 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2198508 |
0.808 |
|
| 2006 |
Gaevski ME, Sun W, Yang J, Adivarahan V, Sattu A, Mokina I, Shatalov M, Simin G, Khan MA. Non-catalyst growth and characterization of a -plane AlGaN nanorods Physica Status Solidi (a). 203: 1696-1699. DOI: 10.1002/Pssa.200565421 |
0.764 |
|
| 2005 |
Braga N, Mickevicius R, Fichtner W, Gaska R, Shur MS, Simin G, Khan MA. Simulation of AlGaN/GaN Heterostructure Field Effect Transistors The Japan Society of Applied Physics. 2005: 1054-1055. DOI: 10.7567/Ssdm.2005.I-7-1 |
0.363 |
|
| 2005 |
Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L1348 |
0.807 |
|
| 2005 |
Karmalkar S, Shur MS, Simin G, Khan MA. Field-plate engineering for HFETs Ieee Transactions On Electron Devices. 52: 2534-2540. DOI: 10.1109/Ted.2005.859568 |
0.4 |
|
| 2005 |
Yang Z, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA. High-power operation of III-N MOSHFET RF switches Ieee Microwave and Wireless Components Letters. 15: 850-852. DOI: 10.1109/Lmwc.2005.860011 |
0.781 |
|
| 2005 |
Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA. Mechanism of current collapse removal in field-plated nitride HFET Ieee Electron Device Letters. 26: 704-706. DOI: 10.1109/Led.2005.855409 |
0.763 |
|
| 2005 |
Adivarahan V, Yang J, Koudymov A, Simin G, Khan MA. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm Ieee Electron Device Letters. 26: 535-537. DOI: 10.1109/Led.2005.852740 |
0.757 |
|
| 2005 |
Simin G, Koudymov A, Yang ZJ, Adivarahan V, Yang J, Khan MA. High-power RF switching using III-Nitride metal-oxide-semiconductor heterojunction capacitors Ieee Electron Device Letters. 26: 56-58. DOI: 10.1109/Led.2004.841470 |
0.772 |
|
| 2005 |
Saygi S, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA, Deng J, Gaska R, Shur MS. Real-space electron transfer in III-nitride metal-oxide-semiconductor- heterojunction structures Applied Physics Letters. 87. DOI: 10.1063/1.2001745 |
0.724 |
|
| 2005 |
Simin G, Adivarahan V, Yang J, Koudymov A, Rai S, Asif Khan M. Stable 20 W/mm AlGaN-GaN MOSHFET Electronics Letters. 41: 774-775. DOI: 10.1049/El:20051203 |
0.769 |
|
| 2005 |
Saygi S, Fatima H, He X, Rai S, Koudymov A, Adivarahan Y, Yang J, Simin G, Asif Khan M. Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors Physica Status Solidi C: Conferences. 2: 2651-2654. DOI: 10.1002/Pssc.200461520 |
0.778 |
|
| 2004 |
Koudymov A, Saygi S, Tipirneni N, Simin G, Adivarahan V, Yang J, Khan MA. AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E6.4 |
0.786 |
|
| 2004 |
Simin G, Khan MA, Shur MS, Gaska R. Insulated Gate Iii-N Heterostructure Field-Effect Transistors International Journal of High Speed Electronics and Systems. 14: 197-224. DOI: 10.1142/S0129156404002302 |
0.611 |
|
| 2004 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Gaska R, Khan MA, Simin G. Generation-recombination noise in GaN-based devices International Journal of High Speed Electronics and Systems. 14: 175-195. DOI: 10.1142/S0129156404002296 |
0.344 |
|
| 2004 |
Koudymov A, Rai S, Adivarahan V, Gaevski M, Yang J, Simin G, Khan MA. Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors Ieee Microwave and Wireless Components Letters. 14: 560-562. DOI: 10.1109/Lmwc.2004.837381 |
0.785 |
|
| 2004 |
Knap W, Fal’ko VI, Frayssinet E, Lorenzini P, Grandjean N, Maude D, Karczewski G, Brandt BL, Łusakowski J, Grzegory I, Leszczyński M, Prystawko P, Skierbiszewski C, Porowski S, Hu X, ... Simin G, et al. Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures Journal of Physics: Condensed Matter. 16: 3421-3432. DOI: 10.1088/0953-8984/16/20/013 |
0.343 |
|
| 2004 |
Braga N, Mickevicius R, Gaska R, Shur MS, Khan MA, Simin G. Simulation of gate lag and current collapse in gallium nitride field-effect transistors Applied Physics Letters. 85: 4780-4782. DOI: 10.1063/1.1823018 |
0.429 |
|
| 2004 |
Adivarahan V, Wu S, Sun WH, Mandavilli V, Shatalov MS, Simin G, Yang JW, Maruska HP, Khan MA. High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design Applied Physics Letters. 85: 1838-1840. DOI: 10.1063/1.1784882 |
0.443 |
|
| 2004 |
Braga N, Mickevicius R, Gaska R, Hu X, Shur MS, Khan MA, Simin G, Yang J. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics. 95: 6409-6413. DOI: 10.1063/1.1719262 |
0.36 |
|
| 2004 |
Deng Y, Kersting R, Xu J, Ascazubi R, Zhang XC, Shur MS, Gaska R, Simin GS, Asif Khan M, Ryzhii V. Millimeter wave emission from GaN high electron mobility transistor Applied Physics Letters. 84: 70-72. DOI: 10.1063/1.1638625 |
0.359 |
|
| 2003 |
Adivarahan V, Chen C, Yang J, Gaevski M, Shatalov M, Simin G, Khan MA. Planar Schottky Diodes on High Quality A-plane GaN Japanese Journal of Applied Physics. 42: 1136. DOI: 10.1143/Jjap.42.L1136 |
0.417 |
|
| 2003 |
Hudgins JL, Simin GS, Santi E, Khan MA. An assessment of wide bandgap semiconductors for power devices Ieee Transactions On Power Electronics. 18: 907-914. DOI: 10.1109/Tpel.2003.810840 |
0.422 |
|
| 2003 |
Khan MA, Simin G, Yang J, Zhang J, Koudymov A, Shur MS, Gaska R, Hu X, Tarakji A. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications Ieee Transactions On Microwave Theory and Techniques. 51: 624-633. DOI: 10.1109/Tmtt.2002.807681 |
0.792 |
|
| 2003 |
Schwindt R, Kumar V, Kuliev A, Simin G, Yang J, Khan M, Muir M, Adesida I. Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Wireless Components Letters. 13: 93-95. DOI: 10.1109/Lmwc.2003.810115 |
0.476 |
|
| 2003 |
Koudymov A, Simin G, Khan MA, Tarakji A, Gaska R, Shur MS. Dynamic Current-Voltage Characteristics of III-N HFETs Ieee Electron Device Letters. 24: 680-682. DOI: 10.1109/Led.2003.818889 |
0.737 |
|
| 2003 |
Adivarahan V, Gaevski M, Sun WH, Fatima H, Koudymov A, Saygi S, Simin G, Yang J, Khan MA, Tarakji A, Shur MS, Gaska R. Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Ieee Electron Device Letters. 24: 541-543. DOI: 10.1109/Led.2003.816574 |
0.781 |
|
| 2003 |
Sun J, Fatima H, Koudymov A, Chitnis A, Hu X, Wang HM, Zhang J, Simin G, Yang J, Khan MA. Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill Ieee Electron Device Letters. 24: 375-377. DOI: 10.1109/Led.2003.813362 |
0.682 |
|
| 2003 |
Tarakji A, Fatima H, Hu X, Zhang J-, Simin G, Khan MA, Shur MS, Gaska R. Large-signal linearity in III-N MOSDHFETs Ieee Electron Device Letters. 24: 369-371. DOI: 10.1109/Led.2003.813355 |
0.488 |
|
| 2003 |
Levinshtein ME, Ivanov PA, Khan MA, Simin G, Zhang J, Hu X, Yang J. Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors Semiconductor Science and Technology. 18: 666-669. DOI: 10.1088/0268-1242/18/7/311 |
0.462 |
|
| 2003 |
Rumyantsev SL, Deng Y, Shur S, Levinshtein ME, Khan MA, Simin G, Yang J, Hu X, Gaska R. On the low frequency noise mechanisms in GaN/AlGaN HFETs Semiconductor Science and Technology. 18: 589-593. DOI: 10.1088/0268-1242/18/6/333 |
0.423 |
|
| 2003 |
Chen CQ, Zhang JP, Adivarahan V, Koudymov A, Fatima H, Simin G, Yang J, Asif Khan M. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors Applied Physics Letters. 82: 4593-4595. DOI: 10.1063/1.1587274 |
0.736 |
|
| 2003 |
Kazlauskas K, Tamulaitis G, Žukauskas A, Khan MA, Yang JW, Zhang J, Kuokstis E, Simin G, Shur MS, Gaska R. Exciton and carrier motion in quaternary AlInGaN Applied Physics Letters. 82: 4501-4503. DOI: 10.1063/1.1586782 |
0.353 |
|
| 2003 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Yang J. Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Journal of Applied Physics. 93: 10030-10034. DOI: 10.1063/1.1574599 |
0.475 |
|
| 2003 |
Hu X, Deng J, Pala N, Gaska R, Shur MS, Chen CQ, Yang J, Simin G, Khan MA, Rojo JC, Schowalter LJ. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Applied Physics Letters. 82: 1299-1301. DOI: 10.1063/1.1555282 |
0.492 |
|
| 2003 |
Shatalov M, Chitnis A, Mandavilli V, Pachipulusu R, Zhang JP, Adivarahan V, Wu S, Simin G, Khan MA, Tamulaitis G, Sereika A, Yilmaz I, Shur MS, Gaska R. Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm Applied Physics Letters. 82: 167-169. DOI: 10.1063/1.1536729 |
0.332 |
|
| 2003 |
Kumar V, Kuliev A, Schwindt R, Muir M, Simin G, Yang J, Asif Khan M, Adesida I. High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Solid-State Electronics. 47: 1577-1580. DOI: 10.1016/S0038-1101(03)00078-9 |
0.487 |
|
| 2003 |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Solid-State Electronics. 47: 1099-1104. DOI: 10.1016/S0038-1101(02)00475-6 |
0.387 |
|
| 2003 |
Mnatsakanov TT, Levinshtein ME, Pomortseva LI, Yurkov SN, Simin GS, Khan MA. Carrier mobility model for GaN Solid-State Electronics. 47: 111-115. DOI: 10.1016/S0038-1101(02)00256-3 |
0.365 |
|
| 2003 |
Sun WH, Kuokstis E, Gaevski M, Zhang JP, Chen CQ, Wang HM, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates Physica Status Solidi (a). 200: 48-51. DOI: 10.1002/Pssa.200303422 |
0.37 |
|
| 2003 |
Chitnis A, Adivarahan V, Zhang JP, Shatalov M, Wu S, Yang J, Simin G, Khan MA, Hu X, Fareed Q, Gaska R, Shur MS. Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes Physica Status Solidi (a). 200: 99-101. DOI: 10.1002/Pssa.200303420 |
0.398 |
|
| 2003 |
Khan MA, Shur MS, Simin G. Strain‐engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces Physica Status Solidi (a). 200: 155-160. DOI: 10.1002/Pssa.200303339 |
0.505 |
|
| 2002 |
Clarke FW, Ho FD, Khan MA, Simin G, Yang J, Gaska R, Shur MS, Deng J, Karmalkar S. Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L9.10 |
0.463 |
|
| 2002 |
Chen CQ, Gaevski ME, Sun WH, Kuokstis E, Yang JW, Simin G, Khan MA, Maruska HP, Hill DW, Chou MMC, Gallagher JJ, Chai BH, Song JH, Ryu MY, Yu PW. GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1 1 00] oriented GaN substrates Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L4.2 |
0.377 |
|
| 2002 |
Yang JW, Chen CQ, Zhang JP, Fareed Q, Wang HM, Ryu M-, Kuokstis E, Simin G, Khan MA. Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K1.8 |
0.333 |
|
| 2002 |
Ryu M, Chen CQ, Kuokstis E, Yang JW, Simin G, Khan MA, Sim GG, Yu PW. UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K1.7 |
0.321 |
|
| 2002 |
Chitnis A, Zhang JP, Adivarahan V, Shuai W, Sun J, Shatalov M, Yang JW, Simin G, Khan MA. 324 nm Light Emitting Diodes with Milliwatt Powers Japanese Journal of Applied Physics. 41: 450. DOI: 10.1143/Jjap.41.L450 |
0.422 |
|
| 2002 |
Chitnis A, Adivarahan V, Shatalov M, Zhang J, Gaevski M, Shuai W, Pachipulusu R, Sun J, Simin K, Simin G, Yang J, Khan MA. Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate Japanese Journal of Applied Physics. 41. DOI: 10.1143/Jjap.41.L320 |
0.42 |
|
| 2002 |
Shatalov M, Chitnis A, Koudymov A, Zhang J, Adivarahan V, Simin G, Khan MA. Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm Japanese Journal of Applied Physics. 41: 1146. DOI: 10.1143/Jjap.41.L1146 |
0.384 |
|
| 2002 |
Shatalov M, Simin G, Adivarahan V, Chitnis A, Wu S, Pachipulusu R, Mandavilli V, Simin K, Zhang JP, Yang JW, Khan MA. Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates Japanese Journal of Applied Physics. 41: 5083-5087. DOI: 10.1143/Jjap.41.5083 |
0.47 |
|
| 2002 |
Chen C, Yang J, Ryu M, Zhang J, Kuokstis E, Simin G, Khan MA. Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission Japanese Journal of Applied Physics. 41: 1924-1928. DOI: 10.1143/Jjap.41.1924 |
0.335 |
|
| 2002 |
Rumyantsev SL, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Yang JW. Low Frequency Noise in Gallium Nitride Field Effect Transistors International Journal of High Speed Electronics and Systems. 12: 449-458. DOI: 10.1142/S012915640200137X |
0.423 |
|
| 2002 |
Khan A, Yang JW, Simin G, Gaska R, Shur MS. STRAIN ENERGY BAND ENGINEERING APPROACH TO AlN/GaN/InN HETEROJUNCTION DEVICES International Journal of High Speed Electronics and Systems. 12: 401-419. DOI: 10.1142/S0129156402001332 |
0.403 |
|
| 2002 |
Simin G, Koudymov A, Fatima H, Zhang J, Yang J, Khan MA, Hu X, Tarakji A, Gaska R, Shur MS. SiO 2/AlGaN/InGaN/GaN MOSDHFETs Ieee Electron Device Letters. 23: 458-460. DOI: 10.1109/Led.2002.801316 |
0.758 |
|
| 2002 |
Kumar V, Lu W, Schwindt R, Kuliev A, Simin G, Yang J, Asif Khan M, Adesida I. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz Ieee Electron Device Letters. 23: 455-457. DOI: 10.1109/Led.2002.801303 |
0.413 |
|
| 2002 |
Koudymov A, Hu X, Simin K, Simin G, Ali M, Yang J, Khan MA. Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs Ieee Electron Device Letters. 23: 449-451. DOI: 10.1109/Led.2002.801301 |
0.773 |
|
| 2002 |
Shatalov M, Simin G, Zhang J, Adivarahan V, Koudymov A, Pachipulusu R, Khan MA. GaN/AlGaN p-channel inverted heterostructure JFET Ieee Electron Device Letters. 23: 452-454. DOI: 10.1109/Led.2002.801295 |
0.732 |
|
| 2002 |
Shatalov M, Zhang J, Chitnis AS, Adivarahan V, Yang J, Simin G, Khan MA. Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells Ieee Journal of Selected Topics in Quantum Electronics. 8: 302-309. DOI: 10.1109/2944.999185 |
0.414 |
|
| 2002 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Ivanov PA, Asif Khan M, Simin G, Hu X, Yang J. Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors Semiconductor Science and Technology. 17: 476-479. DOI: 10.1088/0268-1242/17/5/312 |
0.374 |
|
| 2002 |
Zhang JP, Chitnis A, Adivarahan V, Wu S, Mandavilli V, Pachipulusu R, Shatalov M, Simin G, Yang JW, Khan MA. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm Applied Physics Letters. 81: 4910-4912. DOI: 10.1063/1.1531835 |
0.365 |
|
| 2002 |
Chitnis A, Pachipulusu R, Mandavilli V, Shatalov M, Kuokstis E, Zhang JP, Adivarahan V, Wu S, Simin G, Khan MA. Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm Applied Physics Letters. 81: 2938-2940. DOI: 10.1063/1.1516631 |
0.387 |
|
| 2002 |
Chen CQ, Gaevski ME, Sun WH, Kuokstis E, Zhang JP, Fareed RSQ, Wang HM, Yang JW, Simin G, Khan MA, Maruska HP, Hill DW, Chou MMC, Chai B. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates Applied Physics Letters. 81: 3194-3196. DOI: 10.1063/1.1516230 |
0.389 |
|
| 2002 |
Rumyantsev SL, Deng Y, Borovitskaya E, Dmitriev A, Knap W, Pala N, Shur MS, Levinshtein ME, Khan MA, Simin G, Yang J, Hu X. Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures Journal of Applied Physics. 92: 4726-4730. DOI: 10.1063/1.1508432 |
0.375 |
|
| 2002 |
Ryu MY, Chen CQ, Kuokstis E, Yang JW, Simin G, Khan MA, Sim GG, Yu PW. Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells Applied Physics Letters. 80: 3943-3945. DOI: 10.1063/1.1482415 |
0.324 |
|
| 2002 |
Ryu M, Chen CQ, Kuokstis E, Yang JW, Simin G, Khan MA. Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials Applied Physics Letters. 80: 3730-3732. DOI: 10.1063/1.1481766 |
0.36 |
|
| 2002 |
Zhang JP, Wang HM, Gaevski ME, Chen CQ, Fareed Q, Yang JW, Simin G, Khan MA. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management Applied Physics Letters. 80: 3542-3544. DOI: 10.1063/1.1477620 |
0.358 |
|
| 2002 |
Koudymov A, Fatima H, Simin G, Yang J, Khan MA, Tarakji A, Hu X, Shur MS, Gaska R. Maximum current in nitride-based heterostructure field-effect transistors Applied Physics Letters. 80: 3216-3218. DOI: 10.1063/1.1476054 |
0.747 |
|
| 2002 |
Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Lü JQ, Gaska R, Shur MS, Simin G, Hu X, Khan MA, Saylor CA, Brunel LC. Nonresonant detection of terahertz radiation in field effect transistors Journal of Applied Physics. 91: 9346-9353. DOI: 10.1063/1.1468257 |
0.47 |
|
| 2002 |
Kuokstis E, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells Applied Physics Letters. 80: 977-979. DOI: 10.1063/1.1433164 |
0.329 |
|
| 2002 |
Kumar V, Lu W, Khan F, Schwindt R, Kuliev A, Simin G, Yang J, Asif Khan M, Adesida I. High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm Electronics Letters. 38: 252. DOI: 10.1049/El:20020178 |
0.494 |
|
| 2002 |
Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan MA, Shur MS, Gaska R. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Solid-State Electronics. 46: 1211-1214. DOI: 10.1016/S0038-1101(02)00015-1 |
0.72 |
|
| 2002 |
Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Asif Khan M, Simin G, Yang J. Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Solid-State Electronics. 46: 711-714. DOI: 10.1016/S0038-1101(01)00302-1 |
0.48 |
|
| 2002 |
Kumar V, Kuliev A, Schwindt R, Simin G, Yang J, Asif Khan M, Adesida I. High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC Physica Status Solidi (a). 194: 456-459. DOI: 10.1002/1521-396X(200212)194:2<456::Aid-Pssa456>3.0.Co;2-7 |
0.463 |
|
| 2001 |
Ryu M, Kuokstis E, Chen CQ, Zhang JP, Yang JW, Simin G, Khan MA. Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I8.8.1 |
0.375 |
|
| 2001 |
Zhang JP, Yang JW, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Simin G, Khan MA, Gaska R, Shur MS. Quaternary AlInGaN MQWs for Ultraviolet LEDs Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I4.4.1 |
0.362 |
|
| 2001 |
Zhang JP, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Yang JW, Simin G, Khan MA, Shur M, Gaska R. Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes Japanese Journal of Applied Physics. 40: 921. DOI: 10.1143/Jjap.40.L921 |
0.342 |
|
| 2001 |
Khan MA, Adivarahan V, Zhang JP, Chen C, Kuokstis E, Chitnis A, Shatalov M, Yang JW, Simin G. Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells Japanese Journal of Applied Physics. 40: 1308. DOI: 10.1143/Jjap.40.L1308 |
0.371 |
|
| 2001 |
Simin G, Hu X, Tarakji A, Zhang J, Koudymov A, Saygi S, Yang J, Khan MA, Shur MS, Gaska R. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor Japanese Journal of Applied Physics. 40: 1142. DOI: 10.1143/Jjap.40.L1142 |
0.5 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Ivanov PA, Khan MA, Simin G, Yang J, Hu X, Tarakji A, Gaska R. Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors Fluctuation and Noise Letters. 1. DOI: 10.1142/S0219477501000469 |
0.435 |
|
| 2001 |
Simin G, Hu X, Ilinskaya N, Zhang J, Tarakji A, Kumar A, Yang J, Khan MA, Gaska R, Shur MS. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging Ieee Electron Device Letters. 22: 53-55. DOI: 10.1109/55.902829 |
0.527 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Borovitskaya E, Dmitriev AP, Levinshtein ME, Gaska R, Khan MA, Yang J, Hu X, Simin G. Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors Ieee Transactions On Electron Devices. 48: 530-533. DOI: 10.1109/16.906447 |
0.372 |
|
| 2001 |
Kuokstis E, Zhang J, Ryu M-, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells Applied Physics Letters. 79: 4375-4377. DOI: 10.1063/1.1429753 |
0.361 |
|
| 2001 |
Adivarahan V, Chitnis A, Zhang JP, Shatalov M, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells Applied Physics Letters. 79: 4240-4242. DOI: 10.1063/1.1425453 |
0.371 |
|
| 2001 |
Hu X, Koudymov A, Simin G, Yang J, Asif Khan M, Tarakji A, Shur MS, Gaska R. Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Applied Physics Letters. 79: 2832-2834. DOI: 10.1063/1.1412591 |
0.772 |
|
| 2001 |
Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Asif Khan M, Shur MS, Gaska R. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 79: 2651-2653. DOI: 10.1063/1.1412282 |
0.751 |
|
| 2001 |
Adivarahan V, Simin G, Tamulaitis G, Srinivasan R, Yang J, Khan MA, Shur MS, Gaska R. Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors Applied Physics Letters. 79: 1903-1905. DOI: 10.1063/1.1402159 |
0.368 |
|
| 2001 |
Zhang J, Kuokstis E, Fareed Q, Wang H, Yang J, Simin G, Khan MA, Gaska R, Shur M. Pulsed atomic layer epitaxy of quaternary AlInGaN layers Applied Physics Letters. 79: 925-927. DOI: 10.1063/1.1392301 |
0.301 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Adivarahan V, Yang J, Simin G, Khan MA. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters. 79: 866-868. DOI: 10.1063/1.1385191 |
0.335 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Asif Khan M, Simin G, Hu X, Yang J. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors Journal of Applied Physics. 90: 310-314. DOI: 10.1063/1.1372364 |
0.363 |
|
| 2001 |
Tarakji A, Simin G, Ilinskaya N, Hu X, Kumar A, Koudymov A, Yang J, Asif Khan M, Shur MS, Gaska R. Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors Applied Physics Letters. 78: 2169-2171. DOI: 10.1063/1.1363694 |
0.769 |
|
| 2001 |
Adivarahan V, Lunev A, Khan MA, Yang J, Simin G, Shur MS, Gaska R. Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices Applied Physics Letters. 78: 2781-2783. DOI: 10.1063/1.1353813 |
0.33 |
|
| 2001 |
Gaska R, Shur MS, Hu X, Yang JW, Tarakji A, Simin G, Khan A, Deng J, Werner T, Rumyantsev S, Pala N. Highly doped thin-channel GaN-metal-semiconductor field-effect transistors Applied Physics Letters. 78: 769-771. DOI: 10.1063/1.1344577 |
0.472 |
|
| 2001 |
Shatalov M, Chitnis A, Adivarahan V, Lunev A, Zhang J, Yang JW, Fareed Q, Simin G, Zakheim A, Khan MA, Gaska R, Shur MS. Band-edge luminescence in quaternary AlInGaN light-emitting diodes Applied Physics Letters. 78: 817-819. DOI: 10.1063/1.1343493 |
0.399 |
|
| 2001 |
Ivanov PA, Levinshtein ME, Simin G, Hu X, Yang J, Khan MA, Rumyantsev SL, Shur MS, Gaska R. Drift mobility of electrons in AlGaN/GaN MOSHFET Electronics Letters. 37: 1479-1481. DOI: 10.1049/El:20010982 |
0.378 |
|
| 2001 |
Zhang JP, Kuokstis E, Fareed Q, Wang HM, Yang JW, Simin G, Khan MA, Tamulaitis G, Kurilcik G, Jursenas S, Zukauskas A, Gaska R, Shur M. Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters Physica Status Solidi (a). 188: 95-99. DOI: 10.1002/1521-396X(200111)188:1<95::Aid-Pssa95>3.0.Co;2-Q |
0.343 |
|
| 2001 |
Simin G, Tarakji A, Hu X, Koudymov A, Yang J, Khan MA, Shur MS, Gaska R. High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors Physica Status Solidi (a). 188: 219-222. DOI: 10.1002/1521-396X(200111)188:1<219::Aid-Pssa219>3.0.Co;2-L |
0.438 |
|
| 2001 |
Shatalov M, Chitnis A, Basak D, Yang JW, Fareed Q, Simin G, Asif Khan M, Gaska R, Shur MS. Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting Physica Status Solidi (a) Applied Research. 188: 147-150. DOI: 10.1002/1521-396X(200111)188:1<147::Aid-Pssa147>3.0.Co;2-L |
0.442 |
|
| 2001 |
Kuokstis E, Zhang J, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells Physica Status Solidi B-Basic Solid State Physics. 228: 559-562. DOI: 10.1002/1521-3951(200111)228:2<559::Aid-Pssb559>3.0.Co;2-V |
0.3 |
|
| 2000 |
Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar J, Shur MS. Low Frequency Noise in n-GaN with High Electron Mobility Materials Science Forum. 1603-1608. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1603 |
0.322 |
|
| 2000 |
Knap W, Borovitskaya E, Shur MS, Gaska R, Karczewski G, Brandt B, Maude D, Frayssinet E, Lorenzini P, Grandjean N, Massies J, Yang JW, Hu X, Simin G, Khan MA, et al. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G7.3 |
0.374 |
|
| 2000 |
Timofeev FN, Simin GS, Shatalov MS, Gurevich SA, Bayvel P, Wyatt R, Lealman I, Kashyap R. Experimental and theoretical study of high temperature-stability and low-chirp 1.55 μm semiconductor laser with an external fiber grating Fiber and Integrated Optics. 19: 327-353. DOI: 10.1080/014680300300001699 |
0.314 |
|
| 2000 |
Chitnis A, Kumar A, Shatalov M, Adivarahan V, Lunev A, Yang JW, Simin G, Khan MA, Gaska R, Shur M. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells Applied Physics Letters. 77: 3800-3802. DOI: 10.1063/1.1331084 |
0.38 |
|
| 2000 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors Journal of Applied Physics. 88: 6726-6730. DOI: 10.1063/1.1321790 |
0.399 |
|
| 2000 |
Frayssinet E, Knap W, Lorenzini P, Grandjean N, Massies J, Skierbiszewski C, Suski T, Grzegory I, Porowski S, Simin G, Hu X, Khan MA, Shur MS, Gaska R, Maude D. High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates Applied Physics Letters. 77: 2551-2553. DOI: 10.1063/1.1318236 |
0.364 |
|
| 2000 |
Tamulaitis G, Kazlauskas K, Juršėnas S, Žukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Optical bandgap formation in AlInGaN alloys Applied Physics Letters. 77: 2136-2138. DOI: 10.1063/1.1314288 |
0.334 |
|
| 2000 |
Adivarahan V, Simin G, Yang JW, Lunev A, Khan MA, Pala N, Shur M, Gaska R. SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors Applied Physics Letters. 77: 863-865. DOI: 10.1063/1.1306647 |
0.46 |
|
| 2000 |
Khan MA, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur MS. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. 77: 1339-1341. DOI: 10.1063/1.1290269 |
0.581 |
|
| 2000 |
Khan MA, Yang JW, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur MS, Beaumont B, Teisseire M, Neu G. GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates Applied Physics Letters. 76: 3807-3809. DOI: 10.1063/1.126788 |
0.492 |
|
| 2000 |
Shur MS, Bykhovski AD, Gaska R, Yang JW, Simin G, Khan MA. Accumulation Hole Layer in p-GaN/AlGaN Heterostructures Applied Physics Letters. 76: 3061-3063. DOI: 10.1063/1.126579 |
0.357 |
|
| 2000 |
Khan MA, Yang JW, Simin G, Gaska R, Shur MS, Loye Hz, Tamulaitis G, Zukauskas A, Smith DJ, Chandrasekhar D, Bicknell-Tassius R. Lattice and energy band engineering in AlInGaN/GaN heterostructures Applied Physics Letters. 76: 1161-1163. DOI: 10.1063/1.125970 |
0.314 |
|
| 2000 |
Yang JW, Lunev A, Simin G, Chitnis A, Shatalov M, Khan MA, Nostrand JEV, Gaska R. Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates Applied Physics Letters. 76: 273-275. DOI: 10.1063/1.125745 |
0.402 |
|
| 2000 |
Simin G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Asif Khan M, Gaska R, Shur MS. 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates Electronics Letters. 36: 2043-2044. DOI: 10.1049/El:20001401 |
0.774 |
|
| 2000 |
Rumyantsev SL, Shur MS, Gaska R, Hu X, Khan A, Simin G, Yang J, Zhang N, DenBaars S, Mishra UK. Transient processes in AlGaN/GaN heterostructure field effect transistors Electronics Letters. 36: 757-759. DOI: 10.1049/El:20000573 |
0.4 |
|
| 2000 |
Hu X, Simin G, Yang J, Khan MA, Gaska R, Shur MS. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate Electronics Letters. 36: 753-754. DOI: 10.1049/El:20000557 |
0.466 |
|
| 2000 |
Pala N, Gaska R, Rumyantsev S, Shur MS, Asif Khan M, Hu X, Simin G, Yang J. Low-frequency noise in AlGaN/GaN MOSHFETs Electronics Letters. 36: 268-270. DOI: 10.1049/El:20000171 |
0.458 |
|
| 1999 |
Levinshtein ME, Rumyantsev SL, Look DC, Molnar RJ, Khan MA, Simin G, Adivarahan V, Shur MS. Low-Frequency Noise in n-GaN with High Electron Mobility Journal of Applied Physics. 86: 5075-5078. DOI: 10.1063/1.371482 |
0.309 |
|
| 1999 |
Khan MA, Yang JW, Simin G, Gaska R, Shur MS, Bykhovski AD. Piezoelectric Doping In Alingan/Gan Heterostructures Applied Physics Letters. 75: 2806-2808. DOI: 10.1063/1.125156 |
0.318 |
|
| 1999 |
Khan MA, Yang JW, Simin G, Loye Hz, Bicknell-Tassius R, Gaska R, Shur MS, Tamulaitis G, Zukauskas A. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure Physica Status Solidi (a). 176: 227-230. DOI: 10.1002/(Sici)1521-396X(199911)176:1<227::Aid-Pssa227>3.0.Co;2-Q |
0.315 |
|
| 1999 |
Rumyantsev S, Levinshtein ME, Gaska R, Shur MS, Khan A, Yang JW, Simin G, Ping A, Adesida T. Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates Physica Status Solidi (a). 176: 201-204. DOI: 10.1002/(Sici)1521-396X(199911)176:1<201::Aid-Pssa201>3.0.Co;2-L |
0.373 |
|
| 1998 |
Vainshtein SN, Simin GS, Kostamovaara JT. Deriving of single intensive picosecond optical pulses from a high-power gain-switched laser diode by spectral filtering Journal of Applied Physics. 84: 4109-4113. DOI: 10.1063/1.368692 |
0.327 |
|
| 1997 |
Gurevich SA, Shatalov MS, Simin GS. High frequency confinement factor modulation of diode lasers International Journal of High Speed Electronics and Systems. 8: 547-574. DOI: 10.1142/S0129156497000202 |
0.302 |
|
| 1996 |
Palmour JW, Levinshtein ME, Rumyantsev SL, Simin GS. Low-frequency noise in 4H-silicon carbide junction field effect transistors Applied Physics Letters. 68: 2669-2671. DOI: 10.1063/1.116276 |
0.326 |
|
| 1996 |
Levinshtein ME, Rumyantsev SL, Simin GS, Park H, Peatman WCB, Shur MS. Low frequency noise in two-dimensional metal-semiconductor field effect transistor Applied Physics Letters. 68: 3138-3140. DOI: 10.1063/1.115803 |
0.356 |
|
| 1993 |
Levinshtein ME, Simin GS, Shur M. Getting to Know Semiconductors American Journal of Physics. 61: 765-765. DOI: 10.1119/1.17164 |
0.354 |
|
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