Year |
Citation |
Score |
2016 |
Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li Z, Williams RS, Yang JJ. High-Speed and Low-Energy Nitride Memristors Advanced Functional Materials. 26: 5290-5296. DOI: 10.1002/Adfm.201600680 |
0.337 |
|
2014 |
Brumbach MT, Mickel PR, Lohn AJ, Mirabal AJ, Kalan MA, Stevens JE, Marinella MJ. Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4893929 |
0.326 |
|
2014 |
Stevens JE, Lohn AJ, Decker SA, Doyle BL, Mickel PR, Marinella MJ. Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 021501. DOI: 10.1116/1.4828701 |
0.338 |
|
2013 |
Lohn AJ, Stevens JE, Mickel PR, Marinella MJ. Optimizing TaOx memristor performance and consistency within the reactive sputtering "forbidden region", Applied Physics Letters. 103. DOI: 10.1063/1.4817927 |
0.313 |
|
2012 |
Lohn AJ, Norris KJ, Cormia RD, Coleman E, Tompa GS, Kobayashi NP. Effect of doping on nanowire morphology during plasma-assisted chemical vapor deposition Materials Research Society Symposium Proceedings. 1439: 25-31. DOI: 10.1557/Opl.2012.941 |
0.597 |
|
2012 |
Norris KJ, Lohn AJ, Coleman E, Tompa GS, Kobayashi NP. Modeling and characterization of silicon nanowire networks for thermoelectric conversion Materials Research Society Symposium Proceedings. 1456: 44-50. DOI: 10.1557/Opl.2012.1523 |
0.569 |
|
2012 |
Lohn AJ, Cormia RD, Fryauf DM, Zhang J, Norris KJ, Kobayashi NP. Morphological effect of doping environment on silicon nanowires grown by plasma-assisted chemical vapor deposition Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.11Pe04 |
0.624 |
|
2012 |
Han JW, Lohn AJ, Meyyappan M, Kobayashi NP. Contact metal effects in indium phosphide nanowire transistor Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.930530 |
0.569 |
|
2012 |
Lohn AJ, Dawson N, Cormia R, Fryauf D, Zhang J, Norris KJ, Kobayashi NP. Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.930525 |
0.621 |
|
2012 |
Norris KJ, Zhang J, Fryauf DM, Rugar A, Flores A, Longson TJ, Lohn AJ, Kobayashi NP. Indium phosphide nanowire network - Growth and characterization for thermoelectric conversion Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.929861 |
0.6 |
|
2012 |
Norris KJ, Wong VK, Onishi T, Lohn AJ, Coleman E, Tompa GS, Kobayashi NP. Reflection absorption infrared spectroscopy analysis of the evolution of ErSb on InSb Surface Science. 606: 1556-1559. DOI: 10.1016/J.Susc.2012.06.004 |
0.568 |
|
2012 |
Norris KJ, Lohn AJ, Onishi T, Coleman E, Wong V, Shakouri A, Tompa GS, Kobayashi NP. MOCVD growth of erbium monoantimonide thin film and nanocomposites for thermoelectrics Journal of Electronic Materials. 41: 971-976. DOI: 10.1007/S11664-012-2094-6 |
0.586 |
|
2012 |
Lohn AJ, Kobayashi NP. AC surface photovoltage of indium phosphide nanowire networks Applied Physics a: Materials Science and Processing. 107: 647-651. DOI: 10.1007/S00339-012-6810-0 |
0.577 |
|
2012 |
Lohn AJ, Coleman E, Tompa GS, Kobayashi NP. Assessment on thermoelectric power factor in silicon nanowire networks Physica Status Solidi (a) Applications and Materials Science. 209: 171-175. DOI: 10.1002/Pssa.201127388 |
0.588 |
|
2011 |
Yamada T, Yamada H, Lohn AJ, Kobayashi NP. Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination. Nanotechnology. 22: 055201. PMID 21178228 DOI: 10.1088/0957-4484/22/5/055201 |
0.59 |
|
2011 |
Lohn AJ, Han JW, Kobayashi NP. Surface photovoltage study of indium phosphide nanowire networks Materials Research Society Symposium Proceedings. 1350: 19-23. DOI: 10.1557/Opl.2011.873 |
0.567 |
|
2011 |
Onishi T, Lohn AJ, Coleman E, Tompa GS, Kobayashi NP. Reflection absorption infrared spectroscopy study on the spontaneous formation of erbium monoantimonide nanoparticles on indium antimonide surfaces Materials Research Society Symposium Proceedings. 1351: 27-31. DOI: 10.1557/Opl.2011.1169 |
0.556 |
|
2011 |
Han J, Lohn A, Kobayashi NP, Meyyappan M. Evolutional Transformation of Copper Oxide Nanowires to Copper Nanowires by a Reduction Technique Materials Express. 1: 176-180. DOI: 10.1166/Mex.2011.1022 |
0.527 |
|
2011 |
Han JW, Lohn A, Kobayashi NP, Meyyappan M. Copper oxide thin-flim and nanowire for e-textile applications Proceedings of Spie - the International Society For Optical Engineering. 8106. DOI: 10.1117/12.897454 |
0.577 |
|
2011 |
Yamada T, Yamada H, Lohn AJ, Kobayashi NP. Transport in fused InP nanowire device in dark and under illumination: Coulomb staircase scenario Proceedings of Spie - the International Society For Optical Engineering. 8106. DOI: 10.1117/12.895432 |
0.571 |
|
2011 |
Norris KJ, Onishi T, Lohn AJ, Padgaonkar N, Wong V, Coleman E, Tompa GS, Kobayashi NP. Nanocomposites for thermoelectric power generation: Rare-Earth metal monoantimonide nanostructures embedded in InGaSb and InSbAs ternary alloys Proceedings of Spie - the International Society For Optical Engineering. 8106. DOI: 10.1117/12.895139 |
0.568 |
|
2011 |
Lohn AJ, Longson TJ, Kobayashi NP. Indium phosphide nanowires integrated directly on carbon fibers Proceedings of Spie - the International Society For Optical Engineering. 8106. DOI: 10.1117/12.892493 |
0.56 |
|
2011 |
Lohn AJ, Li X, Kobayashi NP. Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer Journal of Crystal Growth. 315: 157-159. DOI: 10.1016/J.Jcrysgro.2010.08.050 |
0.624 |
|
2010 |
Lohn AJ, Onishi T, Kobayashi NP. Optical properties of indium phosphide nanowire ensembles at various temperatures. Nanotechnology. 21: 355702. PMID 20689159 DOI: 10.1088/0957-4484/21/35/355702 |
0.596 |
|
2010 |
Lohn AJ, Holt M, Dawson N, Kobayashi NP. Ensemble effects on the optical properties of indium phosphide nanowires at various temperatures Materials Research Society Symposium Proceedings. 1258: 19-24. DOI: 10.1557/Proc-1258-P04-14 |
0.57 |
|
2010 |
Yamada H, Yamada T, Lohn AJ, Kobayashi NP. Coulomb staircase in fused semiconducting InP nanowires under light illumination Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.860903 |
0.586 |
|
2010 |
Lohn AJ, Holt M, Dawson N, Kobayashi NP. Temperature-dependent optical properties of InP nanowires in ensembles Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.852506 |
0.616 |
|
2010 |
Yamada H, Yamada T, Lohn AJ, Kobayashi NP. Reversible suppression of Coulomb staircase in InP nanowires with light illumination 2010 Ieee Nanotechnology Materials and Devices Conference, Nmdc2010. 304-305. DOI: 10.1109/NMDC.2010.5652579 |
0.542 |
|
2010 |
Lohn AJ, Kobayashi NP. Effect of substrate crystallinity on growth and optical properties of InP nanowires 2010 Ieee Nanotechnology Materials and Devices Conference, Nmdc2010. 169-170. DOI: 10.1109/NMDC.2010.5652543 |
0.578 |
|
2009 |
Onishi T, Lohn AJ, Kobayashi NP. Optical properties and carrier dynamics of ensembles of InP nanowires grown on non-single-crystal platforms Materials Research Society Symposium Proceedings. 1178: 127-132. DOI: 10.1557/Proc-1178-Aa01-04 |
0.634 |
|
2009 |
Lohn A, Onishi T, Kobayashi NP. Characterization of InP nanowires grown on non-single-crystal platforms Proceedings of Spie - the International Society For Optical Engineering. 7318. DOI: 10.1117/12.818906 |
0.622 |
|
2009 |
Kobayashi NP, Mathai S, Li X, Logeeswaran VJ, Islam MS, Lohn A, Onishi T, Straznicky J, Wang SY, Williams RS. Ensembles of indium phosphide nanowires: Physical properties and functional devices integrated on non-single crystal platforms Applied Physics a: Materials Science and Processing. 95: 1005-1013. DOI: 10.1007/S00339-009-5110-9 |
0.597 |
|
Show low-probability matches. |