| Year |
Citation |
Score |
| 2014 |
Mir RN, Frensley WR, Shichijo S, Blakey PA. Computational technique for probing terminal control mechanisms inside three-dimensional nano-scale MOSFET Electronics Letters. 50: 833-835. DOI: 10.1049/el.2014.0910 |
0.706 |
|
| 2013 |
Mir RN, Frensley WR. Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions Journal of Applied Physics. 114. DOI: 10.1063/1.4824365 |
0.722 |
|
| 2012 |
Yang X, Frensley WR, Zhou D, Hu W. Performance analysis of Si nanowire biosensor by numerical modeling for charge sensing Ieee Transactions On Nanotechnology. 11: 501-512. DOI: 10.1109/Tnano.2011.2178101 |
0.311 |
|
| 2008 |
Asahara M, Campbell CF, Frensley WR. An in-depth, theoretical investigation into modeling metal-insulator-metal capacitors using symmetric coupled lines in a homogeneous medium model Ieee Microwave and Wireless Components Letters. 18: 37-39. DOI: 10.1109/Lmwc.2007.911989 |
0.56 |
|
| 2008 |
Frensley WR. Development of electronic device simulations for educational purposes Journal of Computational Electronics. 7: 494-499. DOI: 10.1007/S10825-008-0259-6 |
0.334 |
|
| 2007 |
Asahara M, Campbell CF, Frensley WR. A novel approach to modeling metal - insulator - metal capacitors over vias with significant electrical length Ieee Transactions On Microwave Theory and Techniques. 55: 709-714. DOI: 10.1109/Tmtt.2007.892810 |
0.571 |
|
| 2006 |
Asahara M, Campbell CF, Frensley WR. A generic, scalable model applicable to MIM capacitors of arbitrary electrical length Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 115-118. DOI: 10.1109/CSICS.2006.319916 |
0.541 |
|
| 2004 |
Loiko KV, Peidous IV, Frensley WR. Experimental study and simulation of stress-induced cavities in silicon Proceedings - Electrochemical Society. 5: 218-225. |
0.76 |
|
| 2003 |
Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114 |
0.568 |
|
| 2002 |
Loiko KV, Peidous IV, Harrington TE, Frensley WR. Stress-induced redistribution of point defects in silicon device structures Solid State Phenomena. 82: 225-230. DOI: 10.4028/Www.Scientific.Net/Ssp.82-84.225 |
0.766 |
|
| 2002 |
Peidous IV, Loiko KV, Simpson DA, Frensley WR, Huff HR. The effect of intrinsic point defects upon dislocation motion in silicon Solid State Phenomena. 82: 219-224. DOI: 10.4028/Www.Scientific.Net/Ssp.82-84.219 |
0.757 |
|
| 2001 |
Peidous IV, Loiko KV, Simpson DA, La T, Frensley WR. Dislocation locking by intrinsic point defects in silicon Materials Research Society Symposium - Proceedings. 673. DOI: 10.1557/Proc-673-P3.9 |
0.762 |
|
| 2001 |
Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500 |
0.595 |
|
| 2000 |
Loiko KV, Nallapati G, Jarreau KM, Ekbote SS, Hensley RA, Simpson D, Harrington TE, Frensley WR, Peidous IV. The impact of point defects on stress-induced dislocation generation in silicon Materials Research Society Symposium - Proceedings. 610: B6.13.1-B6.13.6. DOI: 10.1557/Proc-610-B6.13 |
0.753 |
|
| 2000 |
Daniel ES, Cartoixà X, Frensley WR, Ting DZY, McGill TC. Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode Ieee Transactions On Electron Devices. 47: 1052-1060. DOI: 10.1109/16.841240 |
0.404 |
|
| 1998 |
Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A Generalized Tunneling Formula for Quantum Device Modeling Vlsi Design. 6: 9-12. DOI: 10.1155/1998/84503 |
0.351 |
|
| 1998 |
Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) Vlsi Design. 6: 107-110. DOI: 10.1155/1998/43043 |
0.316 |
|
| 1998 |
Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing Research Software in a Large Group for the NEMO Project Vlsi Design. 8: 79-86. DOI: 10.1155/1998/35374 |
0.303 |
|
| 1997 |
Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. DOI: 10.1063/1.364151 |
0.377 |
|
| 1996 |
Macks LD, Brown SA, Clark RG, Starrett RP, Reed MA, Deshpande MR, Fernando CJ, Frensley WR. Resonant tunneling in double-quantum-well triple-barrier heterostructures. Physical Review. B, Condensed Matter. 54: 4857-4862. PMID 9986446 DOI: 10.1103/Physrevb.54.4857 |
0.323 |
|
| 1995 |
Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539-2541. DOI: 10.1063/1.114451 |
0.34 |
|
| 1994 |
Hellums JR, Frensley WR. Non-Markovian open-system boundary conditions for the time-dependent Schrödinger equation. Physical Review. B, Condensed Matter. 49: 2904-2906. PMID 10011127 DOI: 10.1103/Physrevb.49.2904 |
0.704 |
|
| 1994 |
Deshpande MR, Hornbeck ES, Kozodoy P, Dekker NH, Sleight JW, Reed MA, Fernando CL, Frensley WR. Low-dimensional resonant tunnelling and Coulomb blockade: A comparison of fabricated versus impurity confinement Semiconductor Science and Technology. 9: 1919-1924. DOI: 10.1088/0268-1242/9/11S/011 |
0.34 |
|
| 1994 |
Frensley WR. Heterostructure and Quantum Well Physics Vlsi Electronics Microstructure Science. 24: 1-24. DOI: 10.1016/B978-0-12-234124-3.50006-9 |
0.352 |
|
| 1994 |
Macks LD, Brown SA, Starrett RP, Clark RG, Deshpande MR, Reed MA, Fernando CJL, Frensley WR, Matyi RJ. High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode Physica B: Physics of Condensed Matter. 201: 374-379. DOI: 10.1016/0921-4526(94)91118-5 |
0.312 |
|
| 1991 |
Luscombe JH, Aggarwal R, Reed MA, Frensley WR, Luban M. Theory of the Fermi-level energy in semiconductor superlattices. Physical Review. B, Condensed Matter. 44: 5873-5876. PMID 9998432 DOI: 10.1103/Physrevb.44.5873 |
0.311 |
|
| 1991 |
Seabaugh A, Kao YC, Randall J, Frensley W, Khatibzadeh A. Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector Japanese Journal of Applied Physics. 30: 921-925. DOI: 10.1143/Jjap.30.921 |
0.332 |
|
| 1991 |
Seabaugh AC, Kao YC, Frensley WR, Randall JN, Reed MA. Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor Applied Physics Letters. 59: 3413-3415. DOI: 10.1063/1.105692 |
0.319 |
|
| 1991 |
Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Frensley WR. Formation of rotation-induced superlattices and their observation by tunneling spectroscopy Applied Physics Letters. 59: 570-572. DOI: 10.1063/1.105389 |
0.303 |
|
| 1990 |
Reed MA, Seabaugh AC, Kao Y, Randall JN, Frensley WR, Luscombe JH. Semiconductor Resonant Tunneling Device Physics and Applications Mrs Proceedings. 198: 309. DOI: 10.1557/Proc-198-309 |
0.324 |
|
| 1990 |
Frensley WR. Boundary conditions for open quantum systems driven far from equilibrium Reviews of Modern Physics. 62: 745-791. DOI: 10.1103/Revmodphys.62.745 |
0.318 |
|
| 1990 |
Luscombe JH, Frensley WR. Models for nanoelectronic devices Nanotechnology. 1: 131-140. DOI: 10.1088/0957-4484/1/2/002 |
0.325 |
|
| 1989 |
Seabaugh AC, Frensley WR, Randall JN, Reed MA, Farrington DL, Matyi RJ. Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor Ieee Transactions On Electron Devices. 36: 2328-2334. DOI: 10.1109/16.40918 |
0.342 |
|
| 1989 |
Seabaugh AC, Matyi RJ, Cabaniss GE, Frensley WR. Electrochemical C-V Profiling of Heterojunction Device Structures Ieee Transactions On Electron Devices. 36: 309-313. DOI: 10.1109/16.19930 |
0.341 |
|
| 1989 |
Reed MA, Frensley WR, Matyi RJ, Randall JN, Seabaugh AC. Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor Applied Physics Letters. 54: 1034-1036. DOI: 10.1063/1.101357 |
0.329 |
|
| 1989 |
Reed MA, Frensley WR, Duncan WM, Matyi RJ, Seabaugh AC, Tsai HL. Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes Applied Physics Letters. 54: 1256-1258. DOI: 10.1063/1.101355 |
0.34 |
|
| 1989 |
Frensley WR. Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode Solid State Electronics. 32: 1235-1239. DOI: 10.1016/0038-1101(89)90220-7 |
0.351 |
|
| 1988 |
Frensley WR. Erratum: Wigner-function model of a resonant-tunneling semiconductor device Physical Review. B, Condensed Matter. 37: 10379. PMID 9944480 DOI: 10.1103/Physrevb.37.10379 |
0.327 |
|
| 1988 |
Frensley WR. Quantum transport calculation of the frequency response of resonant-tunneling heterostructure devices Superlattices and Microstructures. 4: 497-501. DOI: 10.1016/0749-6036(88)90225-X |
0.348 |
|
| 1988 |
Frensley WR. Quantum transport modeling of resonant-tunneling devices Solid State Electronics. 31: 739-742. DOI: 10.1016/0038-1101(88)90378-4 |
0.338 |
|
| 1987 |
Frensley WR. Wigner-function model of a resonant-tunneling semiconductor device. Physical Review. B, Condensed Matter. 36: 1570-1580. PMID 9942989 DOI: 10.1103/Physrevb.36.1570 |
0.327 |
|
| 1987 |
Frensley WR. Gallium arsenide transistors Scientific American. 257: 80-87. DOI: 10.1038/Scientificamerican0887-80 |
0.314 |
|
| 1986 |
Reed MA, Bate RT, Bradshaw K, Duncan WM, Frensley WR, Lee JW, Shih HD. SPATIAL QUANTIZATION IN GaAs-AlGaAs MULTIPLE QUANTUM DOTS Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 358-360. DOI: 10.1116/1.583331 |
0.309 |
|
| 1985 |
Frensley WR. Simulation of resonant-tunneling heterostructure devices Journal of Vacuum Science & Technology B. 3: 1261-1266. DOI: 10.1116/1.583009 |
0.351 |
|
| 1985 |
Frensley WR, Bayraktaroglu B, Campbell SE, Shih HD, Lehmann RE. Design and Fabrication of a GaAs Vertical MESFET Ieee Transactions On Electron Devices. 32: 952-956. DOI: 10.1109/T-Ed.1985.22052 |
0.328 |
|
| 1983 |
Frensley WR. An Analytic Model for the Barrier-Limited Mode of Operation of the Permeable Base Transistor Ieee Transactions On Electron Devices. 30: 1624-1628. DOI: 10.1109/T-Ed.1983.21422 |
0.343 |
|
| 1983 |
Frensley WR. Barrier-Limited Transport in Semiconductor Devices Ieee Transactions On Electron Devices. 30: 1619-1623. DOI: 10.1109/T-Ed.1983.21421 |
0.31 |
|
| 1982 |
McLevige WV, Morkoc H, Yuan HT, Drummond TJ, Duncan WM, Frensley WR, Doerbeck FH. GaAs/AlGaAs Heterojunction Bipolar Transistors for Integrated Circuit Applications Ieee Electron Device Letters. 3: 43-45. DOI: 10.1109/Edl.1982.25471 |
0.308 |
|
| 1981 |
Frensley WR. Power-Limiting Breakdown Effects in GaAs MESFET's Ieee Transactions On Electron Devices. 28: 962-970. DOI: 10.1109/T-Ed.1981.20467 |
0.327 |
|
| 1978 |
Frensley WR. THEORETICAL STUDY OF THE ORIENTATION DEPENDENCE OF HETEROJUNCTION ENERGY BAND LINEUPS J Vac Sci Technol. 15: 1465-1468. DOI: 10.1116/1.569809 |
0.309 |
|
| 1977 |
Frensley WR, Kroemer H. Theory of the energy-band lineup at an abrupt semiconductor heterojunction Physical Review B. 16: 2642-2652. DOI: 10.1103/Physrevb.16.2642 |
0.315 |
|
| 1976 |
Frensley WR, Kroemer H. Prediction of semiconductor heterojunction discontinuities from bulk band structures Journal of Vacuum Science and Technology. 13: 810-815. DOI: 10.1116/1.568995 |
0.301 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 1988 |
Frensley WR. Erratum: Transient response of a tunneling device obtained from the Wigner function [Phys. Rev. Lett. 57, 2853 (1986)] Physical Review Letters. 60: 1589-1589. DOI: 10.1103/Physrevlett.60.1589 |
0.298 |
|
| 1986 |
Frensley WR. Transient response of a tunneling device obtained from the Wigner function. Physical Review Letters. 57: 2853-2856. PMID 10033883 DOI: 10.1103/Physrevlett.57.2853 |
0.297 |
|
| 1987 |
Frensley WR. Quantum transport calculation of the small-signal response of a resonant tunneling diode Applied Physics Letters. 51: 448-450. DOI: 10.1063/1.98418 |
0.297 |
|
| 1992 |
Frensley WR. Numerical evaluation of resonant states Superlattices and Microstructures. 11: 347-350. DOI: 10.1016/0749-6036(92)90396-M |
0.296 |
|
| 1990 |
Frensley WR, Reed MA, Seabaugh A. Is resonant tunneling transistor a reality? Physics Today. 43: 132. DOI: 10.1063/1.2810705 |
0.295 |
|
| 1977 |
Frensley WR, Kroemer H. Interstitial potential differences, electronegativity differences, and effective ionic charges in zinc-blende-type semiconductors Applied Physics Letters. 31: 48-49. DOI: 10.1063/1.89475 |
0.295 |
|
| 1985 |
Wisseman WR, Frensley WR. GaAs TECHNOLOGY PERSPECTIVE Vlsi Electronics, Microstructure Science. 11: 1-39. DOI: 10.1016/B978-0-12-234111-3.50006-6 |
0.294 |
|
| 1979 |
Doerbeck FH, Macksey HM, Brehm GE, Frensley WR. Ion-implanted GaAs X-band power f.e.t.s Electronics Letters. 15: 576-578. DOI: 10.1049/El:19790414 |
0.293 |
|
| 1994 |
Fernando CL, Frensley WR. An efficient method for the numerical evaluation of resonant states Journal of Applied Physics. 76: 2881-2886. DOI: 10.1063/1.357525 |
0.29 |
|
| 1990 |
Aggarwal RJ, Reed MA, Frensley WR, Kao YC, Luscombe JH. Tunneling spectroscopic study of finite superlattices Applied Physics Letters. 57: 707-709. DOI: 10.1063/1.103598 |
0.289 |
|
| 1979 |
Frensley WR. MP-A8 Two-Dimensional Numerical Simulation of GaAs MESFET's with Recessed-Gate Structure Ieee Transactions On Electron Devices. 26: 1829. DOI: 10.1109/T-Ed.1979.19702 |
0.288 |
|
| 1995 |
Fernando CL, Frensley WR. Intrinsic high-frequency characteristics of tunneling heterostructure devices. Physical Review. B, Condensed Matter. 52: 5092-5104. PMID 9981693 DOI: 10.1103/Physrevb.52.5092 |
0.283 |
|
| 1989 |
Frensley WR, Reed MA, Luscombe JH. Photoluminescent determination of charge accumulation in resonant tunneling structures. Physical Review Letters. 62: 1207. PMID 10039605 DOI: 10.1103/Physrevlett.62.1207 |
0.278 |
|
| 1980 |
Frensley WR. High-Frequency Effects of Ballistic Electron Transport In Semiconductors Ieee Electron Device Letters. 1: 137-139. DOI: 10.1109/Edl.1980.25261 |
0.278 |
|
| 1990 |
Seabaugh A, Kao YC, Randall J, Frensley W, Khatibzadeh A. Room temperature resonant-tunneling hot electron transistors with dc and microwave gain The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1990.B-1-1 |
0.278 |
|
| 1983 |
Saunier P, Kim B, Frensley WR. GaAs INTEGRATED DIGITAL-TO-ANALOGUE CONVERTOR FOR CONTROL OF POWER DUAL-GATE FETs Electronics Letters. 19: 162-163. DOI: 10.1049/El:19830113 |
0.276 |
|
| 1991 |
Frensley WR. Erratum: Boundary conditions for open quantum systems driven far from equilibrium( Reviews of Modern Physics (1991) 63,1 (215)) Reviews of Modern Physics. 63. DOI: 10.1103/Revmodphys.63.215 |
0.27 |
|
| 1995 |
Taylor MD, Wetsel GC, McBride SE, Brown RC, Frensley WR, Seabaugh AC, Kao Y‐, Beam EA. Nanoprobe‐induced electrostatic lateral quantization in near‐surface resonant‐tunneling heterostructures Applied Physics Letters. 66: 3621-3623. DOI: 10.1063/1.113807 |
0.269 |
|
| 1997 |
Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. |
0.259 |
|
| 1980 |
Tserng HQ, Frensley WR, Saunier P. Light Emission of GaAs Power MESFETs Under RF Drive Ieee Electron Device Letters. 1: 20-21. DOI: 10.1109/Edl.1980.25214 |
0.257 |
|
| 1996 |
Sleight JW, Hornbeck ES, Deshpande MR, Wheeler RG, Reed MA, Bowen RC, Frensley WR, Randall JN, Matyi RJ. Electron-spectroscopic study of vertical In1-xGaxAs quantum dots. Physical Review. B, Condensed Matter. 53: 15727-15737. PMID 9983408 DOI: 10.1103/Physrevb.53.15727 |
0.252 |
|
| 1995 |
Sleight JW, Aggarwal RJ, Duncan W, Kao Y, Tsai HL, Frensley WR, Fernando CL, Reed MA. Spectroscopic study of intraminiband and interminiband tunneling in finite superlattices. Physical Review. B, Condensed Matter. 51: 10701-10708. PMID 9977765 DOI: 10.1103/Physrevb.51.10701 |
0.251 |
|
| 1994 |
Frensley WR. Chapter 9 - Quantum Transport Vlsi Electronics Microstructure Science. 24. DOI: 10.1016/B978-0-12-234124-3.50014-8 |
0.228 |
|
| 1998 |
Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A generalized tunneling formula for quantum device modeling Vlsi Design. 6: 9-12. |
0.227 |
|
| 1988 |
Seabaugh AC, Reed MA, Frensley WR, Randall JN, Matyi RJ. Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors Technical Digest - International Electron Devices Meeting. 900-902. DOI: 10.1109/IEDM.1988.32958 |
0.226 |
|
| 1995 |
Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539. |
0.223 |
|
| 1979 |
Frensley WR, Macksey HM. EFFECT OF GATE STRIPE WIDTH ON THE GAIN OF GaAs MESFETs Proceedings - Biennial Cornell Electrical Engineering Conference. 445-452. |
0.221 |
|
| 1987 |
Bate RT, Frazier GA, Frensley WR, Lee JW, Reed MA. Prospects for quantum integrated circuits Proceedings of Spie - the International Society For Optical Engineering. 792: 26-35. DOI: 10.1117/12.940817 |
0.213 |
|
| 1996 |
Tatum JA, MacFarlane DL, Bowen RC, Klimeck G, Frensley WR. Ultrafast characteristics of InGaP-InGaAlP laser amplifiers Ieee Journal of Quantum Electronics. 32: 664-669. DOI: 10.1109/3.488841 |
0.211 |
|
| 2000 |
Henry CH, Logan RA, Frensley WR. Jan Peter van der Ziel Physics Today. 53: 73-74. DOI: 10.1063/1.883088 |
0.208 |
|
| 1993 |
Huber JL, Reed MA, Kramer G, Adams M, Fernando CJL, Frensley WR. Resonant interband and intraband tunneling in InAs/AlSb/GaSb double barrier diodes Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 299-306. |
0.208 |
|
| 1993 |
Deshpande MR, Dekker NH, Sleight JW, Huber JL, Hornbeck ES, Reed MA, Matyi RJ, Kao YC, Fernando CJL, Frensley WR. Observation of novel conductance structure in GaAs/GaxAl1-xAs resonant tunneling heterostructures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 177-181. |
0.201 |
|
| 1990 |
Randall JN, Reed MA, Luscombe JH, Frazier GF, Frensley WR, Seabaugh AC, Kao YC, Moore TM, Matyi RJ. Advances in the processing of quantum coupled devices Proceedings of Spie - the International Society For Optical Engineering. 1284: 66-74. |
0.199 |
|
| 2015 |
Huang JZ, Wang K, Frensley WR, Klimeck G. Finite difference schemes for k·p models: A comparative study 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301965 |
0.188 |
|
| 1998 |
Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of resonances in a general purpose quantum device simulator (NEMO) Vlsi Design. 6: 107-110. |
0.185 |
|
| 1990 |
Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Gnade BE, Frensley WR. Characterization of unintentionally-ordered superlattice resonant-tunneling diodes Second International Conference On Indium Phosphide and Related Materials. 416-423. |
0.178 |
|
| 1995 |
Huber JL, Kramer TA, Reed MA, Moise TS, Kao YC, Seabaugh AC, Frensley WR, Fernando CL. Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 483-489. |
0.177 |
|
| 1979 |
Doerbeck FH, Macksey HM, Brehm GE, Frensley WR. ION-IMPLANTED GaAs X-BAND POWER F. E. T. S Electronics Letters. 15: 576-578. |
0.176 |
|
| 1995 |
Taylor MD, Wetsel GC, McBride SE, Brown RC, Frensley WR, Seabaugh AC, Kao YC, Beam EA. Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures Applied Physics Letters. 66: 3612. |
0.175 |
|
| 1976 |
Frensley WR, Kroemer H. PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES J Vac Sci Technol. 13: 810-815. |
0.174 |
|
| 1998 |
Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing research software in a large group for the NEMO project Vlsi Design. 8: 79-86. |
0.169 |
|
| 2015 |
Frensley WR. Variational formulation of stable discrete k·p models 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301958 |
0.156 |
|
| 2000 |
Yang H, Frensley WR. Full bandstructure modeling of quantum well infrared photodetectors Ieee International Symposium On Compound Semiconductors, Proceedings. 167-172. |
0.15 |
|
| 2001 |
Frensley WR. Quasi-magnetic fields revisited: Second-order transport effects in graded semiconductors Annual Device Research Conference Digest. 141-142. |
0.142 |
|
| 1991 |
Frensley WR. IIIB-8 Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices Ieee Transactions On Electron Devices. 38: 2704-2705. DOI: 10.1109/16.158726 |
0.141 |
|
| 1979 |
Brehm GE, Doerbeck FH, Frensley WR, Macksey HM, Williams RE. HIGH YIELD, REPRODUCIBLE PROCESS TECHNIQUES FOR MICROWAVE GaAs FETs Proceedings - Biennial Cornell Electrical Engineering Conference. 157-163. |
0.128 |
|
| 2005 |
Levi AFJ, Frensley WR. Applied quantum mechanics Physics Today. 58: 55-56. DOI: 10.1063/1.1881905 |
0.104 |
|
| 1995 |
Bowen RC, Frensley WR, Klimeck G, Lake RK. Transmission resonances and zeros in multiband models. Physical Review. B, Condensed Matter. 52: 2754-2765. PMID 9981345 DOI: 10.1103/PhysRevB.52.2754 |
0.103 |
|
| 1996 |
Sleight JW, Hornbeck ES, Deshpande MR, Wheeler RG, Reed MA, Bowen RC, Frensley WR, Randall JN, Matyi RJ. Electron-spectroscopic study of vertical In1-x GaxAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 53: 15727-15737. |
0.096 |
|
| 1984 |
Frensley WR, Bayraktaroglu B, Campbell SE, Shih HD, Lehmann RE, Williams RE. MICROWAVE OPERATION OF A GALLIUM ARSENIDE VERTICAL MESFET . 260-266. |
0.05 |
|
| 2003 |
Frensley WR. Systematic properties of active technologies Device Research Conference - Conference Digest, Drc. 2003: 139-141. DOI: 10.1109/DRC.2003.1226907 |
0.048 |
|
| Hide low-probability matches. |