Year |
Citation |
Score |
2019 |
Gaur APS, Rivera AM, Dash SP, Dey S, Katiyar RS, Sahoo S. Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer Applied Physics Letters. 115: 173103. DOI: 10.1063/1.5113775 |
0.309 |
|
2018 |
Azhar EA, Ye W, Helfrecht B, Chen G, Thompson L, Yu H, Dey S. ZnO-Based Schottky and Oxide Multilayer Devices for Visibly Transparent Photovoltaic Applications Ieee Transactions On Electron Devices. 65: 3291-3299. DOI: 10.1109/Ted.2018.2823308 |
0.414 |
|
2013 |
Gaur APS, Sahoo S, Ahmadi M, Guinel MJF, Gupta SK, Pandey R, Dey SK, Katiyar RS. Optical and vibrational studies of partially edge-terminated vertically aligned nanocrystalline MoS2 thin films Journal of Physical Chemistry C. 117: 26262-26268. DOI: 10.1021/Jp407377G |
0.499 |
|
2012 |
Yu H, Azhar EA, Belagodu T, Lim S, Dey S. ZnO nanowire based visible-transparent ultraviolet detectors on polymer substrates Journal of Applied Physics. 111: 102806. DOI: 10.1063/1.4714698 |
0.327 |
|
2011 |
Auciello O, Dey S, Araujo CPd. Preface to ISIF 2009 special issue of Journal of Applied Physics : science and technology of integrated functionalities. Journal of Applied Physics. 109: 91501. DOI: 10.1063/1.3581039 |
0.326 |
|
2008 |
Li H, Subramanyam G, Dey S. Influence of space-charge on hysteresis loop characteristics of ferroelectric thin films. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 55: 286-92. PMID 18334335 DOI: 10.1109/Tuffc.2008.647 |
0.38 |
|
2007 |
Cao W, Dey SK. Microstructure and properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire for nanoelectromechanical systems Journal of Sol-Gel Science and Technology. 42: 389-395. DOI: 10.1007/S10971-006-0650-3 |
0.621 |
|
2007 |
Dey SK, Wang CG, Cao W, Bhaskar S, Li J, Subramanyam G. Voltage tunable epitaxial PbxSr(1-x)TiO3 films on sapphire by MOCVD: Nanostructure and microwave properties Frontiers of Ferroelectricity: a Special Issue of the Journal of Materials Science. 77-86. DOI: 10.1007/978-0-387-38039-1_7 |
0.596 |
|
2006 |
Dey S, Cao W, Bhaskar S, Li J. Highly textured Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire by metalorganic chemical vapor deposition Journal of Materials Research. 21: 1526-1531. DOI: 10.1557/Jmr.2006.0184 |
0.644 |
|
2006 |
Gu D, Li J, Dey SK, De Waard H, Marcus S. Nanochemistry, nanostructure, and electrical properties of Ta 2O 5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2230-2235. DOI: 10.1116/1.2335432 |
0.83 |
|
2006 |
Subramanyam G, Chen C, Dey S. Microwave dielectric properties of Mn:BST and PST thin-films Integrated Ferroelectrics. 77: 189-197. DOI: 10.1080/10584580500414457 |
0.599 |
|
2006 |
Gu D, Dey SK, Majhi P. Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2 Applied Physics Letters. 89: 82907. DOI: 10.1063/1.2336718 |
0.775 |
|
2006 |
Tsai MH, Dey S. Self-regulated charge transfer and band tilt in nm-scale polar GaN films European Physical Journal-Applied Physics. 36: 125-130. DOI: 10.1051/Epjap:2006120 |
0.438 |
|
2005 |
Dey SK, Majhi P, Horwitz JS, Kirchoefer SW, Kim WJ. Microstructure Evolution of Pulsed Laser‐Deposited (Ba, Sr)TiO3 Films on MgO for Microwave Applications International Journal of Applied Ceramic Technology. 2: 59-63. DOI: 10.1111/J.1744-7402.2005.02003.X |
0.84 |
|
2005 |
Kato K, Zheng C, Finder JM, Dey SK, Torii Y. Sol‐Gel Route to Ferroelectric Layer‐Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films Journal of the American Ceramic Society. 81: 1869-1875. DOI: 10.1111/J.1151-2916.1998.Tb02559.X |
0.57 |
|
2005 |
Gu D, Sistiabudi R, Dey SK. Modification of work function of Ti by self-assembled monolayer molecules on SiO2∕p‐Si Journal of Applied Physics. 97: 123710. DOI: 10.1063/1.1939083 |
0.771 |
|
2005 |
Cao W, Bhaskar S, Li J, Dey S. Interfacial nanochemistry and electrical properties of Pb(Zr0.3Ti0.7)O3 films on GaN/sapphire Thin Solid Films. 484: 154-159. DOI: 10.1016/J.Tsf.2005.02.034 |
0.545 |
|
2005 |
Goswami J, Noh W, Dey SK. Selective Deposition of Ruthenium Films by Digital CVD Chemical Vapor Deposition. 11: 94-98. DOI: 10.1002/Cvde.200304176 |
0.583 |
|
2004 |
Dey S, Bhaskar S, Tsai MH, Cao W. Pb(Zr,Ti)O3-GaN Heterostructures for RF MEMS Applications Integrated Ferroelectrics. 62: 69-78. DOI: 10.1080/10584580490460402 |
0.434 |
|
2004 |
Dey SK, Bhaskar S, Goswami J, Cao W. Structural and Electrical Properties of Pb(Zr,Ti)O3 Thin Films on GaN/Sapphire, Ru/Sapphire and Ru/GaN/Sapphire Substrates Integrated Ferroelectrics. 60: 69-78. DOI: 10.1080/10584580490441674 |
0.671 |
|
2004 |
Dey SK, Das A, Tsai M, Gu D, Floyd M, Carpenter RW, De Waard H, Werkhoven C, Marcus S. Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf-O films on Si Journal of Applied Physics. 95: 5042-5048. DOI: 10.1063/1.1689752 |
0.835 |
|
2004 |
Dey SK, Goswami J, Gu D, De Waard H, Marcus S, Werkhoven C. Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function Applied Physics Letters. 84: 1606-1608. DOI: 10.1063/1.1650911 |
0.84 |
|
2003 |
Tsai M, Tang Y, Dey SK. Co-existence of ferroelectricity and ferromagnetism in 1.4 nm SrBi2Ta2O11 film Journal of Physics: Condensed Matter. 15: 7901-7915. DOI: 10.1088/0953-8984/15/46/009 |
0.404 |
|
2003 |
Dey S, Goswami J, Das A, Cao W, Floyd M, Carpenter R. Growth and nanostructure of conformal ruthenium films by liquid-source metalorganic chemical vapor deposition Journal of Applied Physics. 94: 774-777. DOI: 10.1063/1.1576513 |
0.648 |
|
2003 |
Dey S, Wang CG, Tang D, Kim MJ, Carpenter R, Werkhoven C, Shero E. Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry Journal of Applied Physics. 93: 4144-4157. DOI: 10.1063/1.1555257 |
0.768 |
|
2003 |
Floyd M, Carpenter R, Dey S, Marcus S, Waard HD, Werkhoven C. Nanochemistry and Structure of Zr and Hf Based High Dielectric Constant Films Microscopy and Microanalysis. 9: 466-467. DOI: 10.1017/S1431927603442335 |
0.552 |
|
2003 |
Torrison L, Tolle J, Kouvetakis J, Dey SK, Gu D, Tsong IST, Crozier PA. Stoichiometric and non-stoichiometric films in the Si-O-N system: Mechanical, electrical, and dielectric properties Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 97: 54-58. DOI: 10.1016/S0921-5107(02)00402-6 |
0.84 |
|
2003 |
Goswami J, Wang CG, Cao W, Dey SK. MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity Chemical Vapor Deposition. 9: 213-220. DOI: 10.1002/Cvde.200306240 |
0.556 |
|
2002 |
Goswami J, Majhi P, Wang CG, Dey SK. Properties of platinum films by liquid-source MOCVD in H2 and O2 Integrated Ferroelectrics. 42: 13-23. DOI: 10.1080/10584580210869 |
0.842 |
|
2001 |
Goswami J, Wang C, Majhi P, Shin Y, Dey SK. Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition Journal of Materials Research. 16: 2192-2195. DOI: 10.1557/Jmr.2001.0300 |
0.845 |
|
2001 |
Dey SK, Majhi P, Shin Y, Tang D, Kirby A, Zhao J, Dornfest C, Lou L, Kher S. Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties Japanese Journal of Applied Physics. 40: 3354-3358. DOI: 10.1143/Jjap.40.3354 |
0.828 |
|
2001 |
Barz R, Neumayer DA, Majhi P, Wang C, Dey SK. Control of bismuth volatility in SBT by vanadium doping Integrated Ferroelectrics. 39: 61-71. DOI: 10.1080/10584580108011928 |
0.82 |
|
2000 |
Dey SK, Barz R, Majhi P, Wang C. Microstructural and Dielectric Properties of High Permittivity (Pb, Ba) ZrO3 Thin Films by Sol-Gel Processing Japanese Journal of Applied Physics. 39: 921. DOI: 10.1143/Jjap.39.L921 |
0.847 |
|
2000 |
Pejova B, Najdoski M, Grozdanov I, Dey SK. Chemical bath deposition of nanocrystalline (111) textured Ag2Se thin films Materials Letters. 43: 269-273. DOI: 10.1016/S0167-577X(99)00272-4 |
0.619 |
|
1999 |
Dey SK, Goswami J, Wang C, Majhi P. Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L1052 |
0.84 |
|
1999 |
Barz R, Neumayer DA, Dey SK. Properties of zirconium doped Sr-Bi-Ta-O thin films Integrated Ferroelectrics. 25: 287-297. DOI: 10.1080/10584589908210179 |
0.665 |
|
1999 |
Pejova BB, Najdoski MŽ, Grozdanov IS, Dey SK. Chemical bath deposition of {111} textured mercury(II) selenide thin layers on transparent polyester sheets Journal of Materials Chemistry. 9: 2889-2892. DOI: 10.1039/A905452I |
0.567 |
|
1999 |
Grozdanov I, Najdoski M, Dey S. A simple solution growth technique for PbSe thin films Materials Letters. 38: 28-32. DOI: 10.1016/S0167-577X(98)00127-X |
0.636 |
|
1998 |
Kato K, Torii Y, Zheng C, Finder JM, Barz RH, Dey S. Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex Key Engineering Materials. 189-198. DOI: 10.4028/Www.Scientific.Net/Kem.157-158.189 |
0.501 |
|
1998 |
Barz R, Amrhein F, Shin Y, Dey SK. Processing and effects of annealing in sol-gel derived SrBi2 Ta 2O9 thin films Integrated Ferroelectrics. 22: 65-74. DOI: 10.1080/10584589808208030 |
0.611 |
|
1998 |
Alluri P, Majhi P, Tang D, Dey SK. ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing Integrated Ferroelectrics. 21: 305-318. DOI: 10.1080/10584589808202072 |
0.828 |
|
1998 |
Torii Y, Tato K, Tsuzuki A, Hwang HJ, Dey S. Preparation and dielectric properties of nonstoichiometric SrBi2Ta2O9-based ceramics Journal of Materials Science Letters. 17: 827-828. DOI: 10.1023/A:1006642623622 |
0.302 |
|
1997 |
Kato K, Finder JM, Dey SK, Torii Y. Low-temperature crystallization and ferroelectric properties of sol-gel derived layer-structured perovskite thin films Integrated Ferroelectrics. 18: 237-247. DOI: 10.1080/10584589708221702 |
0.543 |
|
1997 |
Alluri P, Tang D, Dey SK. Low temperature ECR-CVD of (Ba,Sr)TiO3 films Integrated Ferroelectrics. 18: 145-154. DOI: 10.1080/10584589708221695 |
0.771 |
|
1996 |
Dey SK, Alluri PV. PE-MOCVD of Dielectric Thin Films: Challenges and Opportunities Mrs Bulletin. 21: 44-48. DOI: 10.1557/S0883769400046078 |
0.385 |
|
1996 |
Barlingay CK, Dey S. Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films Thin Solid Films. 272: 112-115. DOI: 10.1016/0040-6090(95)06983-6 |
0.506 |
|
1996 |
Coffman PR, Barlingay CK, Gupta A, Dey S. Structure evolution in the PbO-ZrO2-TiO2 sol-gel system: Part II—Pyrolysis of acid and base-catalyzed bulk and thin film gels Journal of Sol-Gel Science and Technology. 6: 83-106. DOI: 10.1007/Bf00402592 |
0.44 |
|
1995 |
Dey SK, Lee JJ, Alluri P. Electrical properties of paraelectric (Pbo.72lao.28)tios thin films with high linear dielectric permittivity: Schottky and ohmic contacts Japanese Journal of Applied Physics. 34: 3142-3152. DOI: 10.1143/Jjap.34.3142 |
0.488 |
|
1995 |
Dey S, Alluri P, Lee JJ, Zuleeg R. Influence of surfaces on the dielectric properties and leakage currents in paraelectric (pb0.72la0.28)tio3 thin films Integrated Ferroelectrics. 7: 341-352. DOI: 10.1080/10584589508220244 |
0.41 |
|
1995 |
Grozdanov I, Barlingay CK, Dey S. Deposition of transparent and electroconductive chalcogenide films at near-room temperatures Integrated Ferroelectrics. 6: 205-211. DOI: 10.1080/10584589508019365 |
0.609 |
|
1995 |
Grozdanov I, Barlingay CK, Dey SK. Novel applications of chemically deposited CuxS thin films Materials Letters. 23: 181-185. DOI: 10.1016/0167-577X(95)00034-8 |
0.566 |
|
1994 |
Modak AR, Dey S. Transmission electron microscopy observations of sol-gel derived ferroelectric PbZrO3-PbTiO3 thin films with excess PbO Integrated Ferroelectrics. 5: 321-331. DOI: 10.1080/10584589408223889 |
0.53 |
|
1994 |
Lee JJ, Alluri P, Dey SK. Effect of interfaces on the electrical behavior of (Pb 0.72La0.28)TiO3 thin films Applied Physics Letters. 65: 2027-2029. DOI: 10.1063/1.112783 |
0.493 |
|
1994 |
Grozdanov I, Barlingay CK, Dey S, Ristov M, Najdoski M. Experimental study of the copper thiosulfate system with respect to thin-film deposition Thin Solid Films. 250: 67-71. DOI: 10.1016/0040-6090(94)90167-8 |
0.532 |
|
1994 |
Coffman PR, Dey S. Structure evolution in the PbO-ZrO2-TiO2 sol-gel system: Part I — Characterization of prehydrolyzed precursors Journal of Sol-Gel Science and Technology. 1: 251-265. DOI: 10.1007/Bf00486168 |
0.364 |
|
1993 |
Clark LT, Gloerstad T, Grondint RO, Dey SK. Measurement and simulation of partial switching in ferroelectric pzt thin-films Integrated Ferroelectrics. 3: 309-320. DOI: 10.1080/10584589308216686 |
0.333 |
|
1992 |
Kang ZC, Gupta A, Mckelvy MJ, Eyring L, Dey SK. Nanostructure Evolution During the Transition of TiO 2 , PbTiO 3 and PZT from GELS to Crystalline thin Films. Mrs Proceedings. 230: 301. DOI: 10.1557/Proc-230-301 |
0.549 |
|
1992 |
Gloerstad TK, Grondin RO, Clark LT, Dey SK. A Pulse Generation Circuit for Improved Measurement of Current Transients in Ferroelectric Thin Films Ieee Transactions On Instrumentation and Measurement. 41: 716-719. DOI: 10.1109/19.177350 |
0.431 |
|
1992 |
Dey SK, Lee J-. Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors Ieee Transactions On Electron Devices. 39: 1607-1613. DOI: 10.1109/16.141225 |
0.594 |
|
1992 |
Petuskey WT, Richardson DA, Dey SK. Chemical aspects of Pb-Zr-Ti oxide thin film syntheses by pe-mocvd below 500-c Integrated Ferroelectrics. 2: 269-295. DOI: 10.1080/10584589208215749 |
0.581 |
|
1992 |
Dey S, Barlingay CK, Lee JJ, Gloerstad TK, Suchicital CTA. Advances in Processing and Properties of Perovskite Thin-Films for FRAMs, DRAMs, and Decoupling Capacitors, Integrated Ferroelectrics. 1: 181-194. DOI: 10.1080/10584589208215710 |
0.565 |
|
1992 |
Dey SK. Integrated pb-perovskite dielectrics for science and technology Ferroelectrics. 135: 117-130. DOI: 10.1080/00150199208230017 |
0.482 |
|
1992 |
Barlingay CK, Dey S. Observation of sol‐gel solid phase epitaxial growth of ferroelectric Pb(Nb,Zr,Ti)O3 thin films on sapphire Applied Physics Letters. 61: 1278-1280. DOI: 10.1063/1.107616 |
0.58 |
|
1992 |
Lee JJ, Dey S. Processing of a uniaxial ferroelectric Pb5Ge3O11 thin film at 450 °C with c‐axis orientation Applied Physics Letters. 60: 2487-2488. DOI: 10.1063/1.106941 |
0.604 |
|
1991 |
Bennett KW, Brody PS, Rod BJ, Cook LP, Schenck PK, Dey S. Dielectric Constant and Hysteresis Loop Remanent Polarization from 100 Hz to 2 MHz for Thin Ferroelectric Films Mrs Proceedings. 243: 507. DOI: 10.1557/Proc-243-507 |
0.506 |
|
1990 |
Kang C, Dey SK, Eyring L. Nanostructure Evolution During Processing of Thin-Film Gels: A High-Resolution Electron Microscopic Study. 2. The Thin-Film Gel Derived From Pb(Zr 0.45 Ti 0.55 )O 2 (OR) 2 Mrs Proceedings. 183. DOI: 10.1557/Proc-183-291 |
0.581 |
|
1990 |
Dey SK, Zuleeg R. Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications Ferroelectrics. 108: 37-46. DOI: 10.1080/00150199008018730 |
0.48 |
|
1990 |
Dey S, Zuleeg R. Processing and parameters of sol-gel PZT thin-films for GaAs memory applications Ferroelectrics. 112: 309-319. DOI: 10.1080/00150199008008235 |
0.582 |
|
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