| Year |
Citation |
Score |
| 2019 |
Reddy JW, Kimukin I, Stewart LT, Ahmed Z, Barth AL, Towe E, Chamanzar M. High Density, Double-Sided, Flexible Optoelectronic Neural Probes With Embedded μLEDs. Frontiers in Neuroscience. 13: 745. PMID 31456654 DOI: 10.3389/Fnins.2019.00745 |
0.302 |
|
| 2018 |
Liang YH, Towe E. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures Journal of Applied Physics. 123: 95303. DOI: 10.1063/1.5009937 |
0.344 |
|
| 2016 |
Yang C, Towe E. Ultra-compact grating-based monolithic optical pulse compressor for laser amplifier systems Journal of the Optical Society of America B-Optical Physics. 33: 2135-2143. DOI: 10.1364/Josab.33.002135 |
0.3 |
|
| 2012 |
Gaan S, Feenstra RM, Ebert P, Dunin-Borkowski RE, Walker J, Towe E. Structure and electronic spectroscopy of steps on GaAs(110) surfaces Surface Science. 606: 28-33. DOI: 10.1016/J.Susc.2011.08.017 |
0.309 |
|
| 2011 |
Ramasubramaniam A, Naveh D, Towe E. Tunable band gaps in bilayer transition-metal dichalcogenides Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205325 |
0.354 |
|
| 2011 |
Sharma TK, Naveh D, Towe E. Strain-driven light-polarization switching in deep ultraviolet nitride emitters Physical Review B. 84: 35305. DOI: 10.1103/Physrevb.84.035305 |
0.375 |
|
| 2011 |
Sharma TK, Towe E. Why are nitride lasers limited to the spectral range from ∼340 to 530 nm? Physica Status Solidi (C). 8: 2366-2368. DOI: 10.1002/Pssc.201001062 |
0.453 |
|
| 2010 |
Gaan S, He G, Feenstra RM, Walker J, Towe E. Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy Journal of Applied Physics. 108: 114315. DOI: 10.1063/1.3518680 |
0.483 |
|
| 2010 |
Gaan S, He G, Feenstra RM, Walker J, Towe E. Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy Applied Physics Letters. 97: 123110. DOI: 10.1063/1.3491551 |
0.471 |
|
| 2007 |
Zerova VL, Vorob’ev LE, Firsov DA, Towe E. Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields Semiconductors. 41: 596-605. DOI: 10.1134/S1063782607050211 |
0.441 |
|
| 2007 |
Klokishner S, Reu O, Ostrovsky S, Palii A, Towe E. A vibronic model for the absorption spectra of Cr2+ ions in CdSexS1-x Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/48/486213 |
0.314 |
|
| 2006 |
Vorobjev LE, Panevin VY, Fedosov NK, Firsov DA, Shalygin VA, Seilmeier A, Schmidt SR, Zibik EA, Towe E, Kapaev VV. Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation Semiconductor Science and Technology. 21: 1267-1273. DOI: 10.1088/0268-1242/21/9/010 |
0.48 |
|
| 2006 |
Kasiyan V, Dashevsky Z, Shneck R, Towe E. Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystals Journal of Crystal Growth. 290: 50-55. DOI: 10.1016/J.Jcrysgro.2005.12.118 |
0.304 |
|
| 2005 |
Stoleru VG, Towe E, Ni C, Pal D. Quantum-dot molecules for potential applications in terahertz devices Materials Research Society Symposium Proceedings. 829: 9-14. DOI: 10.1557/Proc-829-B1.3 |
0.51 |
|
| 2005 |
Chen L, Towe E. Opto-electronic Simulation of GaN Nanowire Lasers Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff11-08 |
0.382 |
|
| 2005 |
Towe E. The Potential for Quantum Dot-Based Devices in Chip-Scale Optical Interconnects Frontiers in Optics. DOI: 10.1364/Fio.2005.Ftup3 |
0.464 |
|
| 2005 |
Vorobjev LE, Panevin VY, Fedosov NK, Firsov DA, Shalygin VA, Seilmeier A, Schmidt SR, Zibik EA, Towe E, Kapaev VV. Dynamics of the Intraband Light Absorption in Selectively Doped GaAs/AlGaAs Quantum Wells Acta Physica Polonica A. 107: 429-434. DOI: 10.12693/Aphyspola.107.429 |
0.486 |
|
| 2004 |
Zerova VL, Kapaev VV, Vorob’ev LE, Firsov DA, Schmidt S, Zibik EA, Seilmeier A, Towe E. Intersubband absorption of light in selectively doped asymmetric double tunnel-coupled quantum wells Semiconductors. 38: 1409-1415. DOI: 10.1134/1.1836062 |
0.454 |
|
| 2002 |
Towe E, Pal D, Vorobjev LE, Glukhovskoy AV, Danilov SN, Zerova VL, Panevin VY, Firsov DA, Shalygin VA, Zegrya GG, Weber A, Grundmann M. Injection Lasers Based on Intraband Carrier Transitions Materials Science Forum. 209-212. DOI: 10.4028/Www.Scientific.Net/Msf.384-385.209 |
0.394 |
|
| 2002 |
Pal D, Stoleru VG, Towe E, Firsov D. Quantum Dot-Size Variation and Its Impact on Emission and Absorption Characteristics: An Experimental and Theoretical Modeling Investigation Japanese Journal of Applied Physics. 41: 482-489. DOI: 10.1143/Jjap.41.482 |
0.449 |
|
| 2002 |
Stoleru VG, Pal D, Towe E. Self-assembled (In,Ga)As/GaAs quantum-dot nanostructures: Strain distribution and electronic structure Physica E: Low-Dimensional Systems and Nanostructures. 15: 131-152. DOI: 10.1016/S1386-9477(02)00459-9 |
0.461 |
|
| 2002 |
Pal D, Firsov D, Towe E. Interband emission and normal-incidence intraband absorption in (In,Ga)As quantum-dot nanostructures Physica E-Low-Dimensional Systems & Nanostructures. 15: 6-12. DOI: 10.1016/S1386-9477(02)00443-5 |
0.494 |
|
| 2002 |
Chen L, Stoleru VG, Pan D, Towe E. Enchanced 1.3-μm-emission from InAs quantum dots embedded in symmetric (In,Ga)As quantum-well structures Journal of Crystal Growth. 242: 263-269. DOI: 10.1016/S0022-0248(02)01385-4 |
0.497 |
|
| 2001 |
Chen L, Stoleru VG, Pal D, Pan D, Towe E. Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well Mrs Proceedings. 707. DOI: 10.1557/Proc-707-H3.3.1 |
0.472 |
|
| 2001 |
Kastalsky A, Vorobjev LE, Firsov A, Zerova VL, Towe E. A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots Ieee Journal of Quantum Electronics. 37: 1356-1362. DOI: 10.1109/3.952548 |
0.467 |
|
| 2001 |
Vorobjev LE, Danilov SN, Gluhovskoy AV, Zerova VL, Zibik EA, Panevin VY, Firsov DA, Shalygin VA, Andreev AD, Volovik BV, Zhukov AE, Ledentsov NN, Livshits DA, Ustinov VM, Shernyakov YM, ... ... Towe E, et al. Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells Nanotechnology. 12: 462-465. DOI: 10.1088/0957-4484/12/4/316 |
0.491 |
|
| 2001 |
Pal D, Pan D, Towe E, Chen SJ. Characterization of (In, Ga, Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction Journal of Crystal Growth. 233: 34-39. DOI: 10.1016/S0022-0248(01)01543-3 |
0.458 |
|
| 2000 |
Stoleru VG, Pal D, Towe E. An Analytical Approach for Computing the Energy Structure of InAs Quantum Dots Mrs Proceedings. 642. DOI: 10.1557/Proc-642-J1.7.1 |
0.482 |
|
| 2000 |
Pan D, Towe E, Kennerly S, Kong M. Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures Applied Physics Letters. 76: 3537-3539. DOI: 10.1063/1.126699 |
0.487 |
|
| 2000 |
Pan D, Towe E, Kennerly S. Photovoltaic quantum-dot infrared detectors Applied Physics Letters. 76: 3301-3303. DOI: 10.1063/1.126613 |
0.48 |
|
| 1999 |
Gokkavas M, Onat BM, Ozbay E, Ata EP, Xu J, Towe E, Unlu MS. Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes Ieee Journal of Quantum Electronics. 35: 208-215. DOI: 10.1109/3.740742 |
0.331 |
|
| 1999 |
Pan D, Towe E, Kennerly S. A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector Applied Physics Letters. 75: 2719-2721. DOI: 10.1063/1.125127 |
0.502 |
|
| 1999 |
Towe E, Vorobjev LE, Danilov SN, Kochegarov YV, Firsov DA, Donetsky DV. Hot-electron far-infrared intrasubband absorption and emission in quantum wells Applied Physics Letters. 75: 2930-2932. DOI: 10.1063/1.124637 |
0.468 |
|
| 1999 |
Vorobjev LE, Zibik EA, Firsov DA, Shalygin VA, Towe E, Toropov AA, Shubina TV. Fast modulation of infrared light by hot electrons in tunnel-coupled GaAs/AlGaAs quantum wells Physica B-Condensed Matter. 272: 451-453. DOI: 10.1016/S0921-4526(99)00318-X |
0.502 |
|
| 1999 |
Vorobjev LE, Danilov SN, Donetsky DV, Firsov DA, Towe E, Zhukavin RK, Pavlov SG, Shastin VN. Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW Physica B: Condensed Matter. 272: 223-225. DOI: 10.1016/S0921-4526(99)00275-6 |
0.425 |
|
| 1999 |
Towe E, Ramos PA, Xu J, Henderson RH. Optoelectronic devices on novel index surfaces Microelectronics Journal. 30: 783-791. DOI: 10.1016/S0026-2692(98)00185-2 |
0.314 |
|
| 1999 |
Xu J, Towe E, Yuan Q, Hull R. Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: structural and optical properties Journal of Crystal Growth. 196: 26-32. DOI: 10.1016/S0022-0248(98)00871-9 |
0.419 |
|
| 1999 |
Pan D, Xu J, Towe E. Insensitivity of self-formed quantum dots to substrate surface roughness Journal of Crystal Growth. 196: 23-25. DOI: 10.1016/S0022-0248(98)00816-1 |
0.465 |
|
| 1999 |
Vorobjev LE, Zerova VL, Titkov IE, Firsov DA, Shalygin VA, Tulupenko VN, Towe E. Birefringence and absorption of infrared radiation in tunnel-coupled GaAs/AlGaAs quantum wells in a longitudinal electric field Superlattices and Microstructures. 25: 367-371. DOI: 10.1006/Spmi.1998.0660 |
0.449 |
|
| 1998 |
Vorobjev LE, Danilov SN, Donetsky DV, Zerova VL, Kochegarov YV, Firsov DA, Shalygin VA, Zegrya GG, Towe E. Hot Electron FIR Emission and Absorption in GaAs/AlGaAs QW Materials Science Forum. 45-48. DOI: 10.4028/Www.Scientific.Net/Msf.297-298.45 |
0.395 |
|
| 1998 |
Vorobjev LE, Zerova VL, Titkov IE, Firsov DA, Shalygin VA, Tulupenko VN, Towe E. Electrooptical Phenomena in Tunnel-Coupled Quantum Wells in Longitudinal Electric Field Materials Science Forum. 33-36. DOI: 10.4028/Www.Scientific.Net/Msf.297-298.33 |
0.404 |
|
| 1998 |
Vorob'ev LE, Donetskiǐ DV, Firsov DA, Bondarenko EB, Zegrya GG, Towe E. Terahertz emission from square wells in a longitudinal electric field Jetp Letters. 67: 533-538. DOI: 10.1134/1.567720 |
0.394 |
|
| 1998 |
Vorob’ev LE, Titkov IE, Firsov DA, Shalygin VA, Toropov AA, Shubina TV, Tulupenko VN, Towe E. Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells Semiconductors. 32: 757-761. DOI: 10.1134/1.1187500 |
0.472 |
|
| 1998 |
Onat B, Gokkavas M, Ozbay E, Ata E, Towe E, Unlu M. 100-GHz resonant cavity enhanced Schottky photodiodes Ieee Photonics Technology Letters. 10: 707-709. DOI: 10.1109/68.669338 |
0.369 |
|
| 1998 |
Pan D, Xu J, Towe E, Xu Q, Hsu JW. Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films Applied Physics Letters. 73: 2164-2166. DOI: 10.1063/1.122410 |
0.484 |
|
| 1998 |
Pan D, Towe E, Kennerly S. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors Applied Physics Letters. 73: 1937-1939. DOI: 10.1063/1.122328 |
0.503 |
|
| 1998 |
Pan D, Towe E, Kennerly S. Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures Electronics Letters. 34: 1019-1020. DOI: 10.1049/El:19980589 |
0.489 |
|
| 1997 |
Gokkavas M, Onat BM, Ozbay E, Islam MS, Ata EP, Towe E, Tuttle G, Unlu MS. Ultrafast resonant cavity enhanced Schottky photodiodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 160-161. DOI: 10.1117/12.298261 |
0.322 |
|
| 1997 |
Özbay E, Islam MS, Onat B, Gökkavas M, Aytür O, Tuttle G, Towe E, Henderson RH, Ünlü MS. Fabrication of high-speed resonant cavity enhanced schottky photodiodes Ieee Photonics Technology Letters. 9: 672-674. DOI: 10.1109/68.588199 |
0.378 |
|
| 1995 |
Henderson RH, Sun D, Towe E. Analysis of anisotropic matrix elements in GaAs quantum wells oriented in the [112] crystal axis Surface Science. 327. DOI: 10.1016/0039-6028(95)00091-7 |
0.435 |
|
| 1995 |
Sun D, Henderson RH, Towe E. Magnitude and polarity of strain-induced fields in pseudomorphic In0.2Ga0.8As quantum well structures on (112) GaAs substrates Journal of Crystal Growth. 150: 478-481. DOI: 10.1016/0022-0248(95)80257-D |
0.359 |
|
| 1995 |
Towe E, Sun D, Vorobjev LE, Danilov SN, Firsov DA, Zibik EA. A Two-Dimensional hot electron electro-optic effect in GaAs/(Al,Ga)As multiple quantum wells Superlattices and Microstructures. 17: 129-133. DOI: 10.1006/Spmi.1995.1025 |
0.485 |
|
| 1994 |
Sun D, Towe E. Operation of strained-layer (In,Ga)As quantum well lasers prepared on (112)B GaAs substrate Electronics Letters. 30: 497-499. DOI: 10.1049/El:19940328 |
0.409 |
|
| 1993 |
Sun D, Towe E, Hayduk MJ, Boncek RK. Observation of polarization‐dependent electroabsorption in (In,Ga)As/GaAs modulator structures oriented in the [110] crystallographic direction Applied Physics Letters. 63: 2881-2883. DOI: 10.1063/1.110313 |
0.361 |
|
| 1993 |
Sun D, Towe E. Molecular beam epitaxial growth of (Al,Ga)As/GaAs heterostructures and Si doping characterization study on vicinal (110) GaAs substrates Journal of Crystal Growth. 132: 166-172. DOI: 10.1016/0022-0248(93)90258-X |
0.349 |
|
| Show low-probability matches. |