| Year |
Citation |
Score |
| 2020 |
Waters D, Nie Y, Lüpke F, Pan Y, Fölsch S, Lin YC, Jariwala B, Zhang K, Wang C, Lv H, Cho K, Xiao D, Robinson JA, Feenstra RM. Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS-WSe Heterobilayers. Acs Nano. PMID 32496750 DOI: 10.1021/Acsnano.0C03414 |
0.34 |
|
| 2019 |
Chen H, Feenstra RM, Northrup JE, Zywietz T, Neugebauer J. Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces Physical Review Letters. 85: 1902-5. PMID 10970643 DOI: 10.1103/Physrevlett.85.1902 |
0.445 |
|
| 2019 |
Feenstra RM, Slavin AJ, Held GA, Lutz MA. Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy. Physical Review Letters. 66: 3257-3260. PMID 10043741 DOI: 10.1103/Physrevlett.66.3257 |
0.337 |
|
| 2019 |
Feenstra RM, Stroscio JA. Reconstruction of steps on the Si(111)2 x 1 surface. Physical Review Letters. 59: 2173-2176. PMID 10035443 DOI: 10.1103/Physrevlett.59.2173 |
0.375 |
|
| 2019 |
Stroscio JA, Feenstra RM, Fein AP. Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface. Physical Review Letters. 58: 1668-1671. PMID 10034503 DOI: 10.1103/Physrevlett.58.1668 |
0.332 |
|
| 2019 |
Feenstra RM, Stroscio JA, Tersoff J, Fein AP. Atom-selective imaging of the GaAs(110) surface. Physical Review Letters. 58: 1192-1195. PMID 10034366 DOI: 10.1103/Physrevlett.58.1192 |
0.338 |
|
| 2019 |
Pashley MD, Haberern KW, Feenstra RM, Kirchner PD. Different Fermi-level pinning behavior on n- and p-type GaAs(001). Physical Review. B, Condensed Matter. 48: 4612-4615. PMID 10008943 DOI: 10.1103/Physrevb.48.4612 |
0.373 |
|
| 2019 |
Shih CK, Feenstra RM, Chandrashekhar GV. Scanning tunneling microscopy and spectroscopy of Bi-Sr-Ca-Cu-O 2:2:1:2 high-temperature superconductors. Physical Review. B, Condensed Matter. 43: 7913-7922. PMID 9996413 DOI: 10.1103/Physrevb.43.7913 |
0.394 |
|
| 2019 |
Feenstra RM. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors. Physical Review. B, Condensed Matter. 50: 4561-4570. PMID 9976760 DOI: 10.1103/Physrevb.50.4561 |
0.372 |
|
| 2019 |
McLean AB, Feenstra RM, Taleb-Ibrahimi A, Ludeke R. Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi. Physical Review. B, Condensed Matter. 39: 12925-12928. PMID 9948173 DOI: 10.1103/Physrevb.39.12925 |
0.405 |
|
| 2019 |
Mårtensson P, Feenstra RM. Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 39: 7744-7753. PMID 9947455 DOI: 10.1103/Physrevb.39.7744 |
0.459 |
|
| 2019 |
Stroscio JA, Feenstra RM, Fein AP. Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning-tunneling microscopy. Physical Review. B, Condensed Matter. 36: 7718-7721. PMID 9942563 DOI: 10.1103/Physrevb.36.7718 |
0.402 |
|
| 2019 |
Feenstra RM, Fein AP. Surface morphology of GaAs(110) by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 32: 1394-1396. PMID 9937174 DOI: 10.1103/PHYSREVB.32.1394 |
0.321 |
|
| 2019 |
Li J, Wang Q, He G, Widom M, Nemec L, Blum V, Kim M, Rinke P, Feenstra RM. Formation of graphene atop a Si adlayer on the C-face of SiC Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.084006 |
0.453 |
|
| 2018 |
Pan Y, Fölsch S, Nie Y, Waters D, Lin YC, Jariwala B, Zhang K, Cho K, Robinson JA, Feenstra RM. Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers. Nano Letters. PMID 29415536 DOI: 10.1021/Acs.Nanolett.7B05125 |
0.362 |
|
| 2018 |
Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, ... ... Feenstra RM, et al. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Acs Nano. PMID 29360349 DOI: 10.1021/Acsnano.7B07059 |
0.388 |
|
| 2018 |
Feenstra RM, de la Barrera SC, Li J, Nie Y, Cho K. Magnitude of the current in 2D interlayer tunneling devices. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 30: 055703. PMID 29334077 DOI: 10.1088/1361-648X/Aaa4B0 |
0.779 |
|
| 2018 |
Mende PC, Li J, Feenstra RM. Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene Applied Physics Letters. 113: 31605. DOI: 10.1063/1.5039823 |
0.424 |
|
| 2017 |
Zhang K, Jariwala B, Li J, Briggs NC, Wang B, Ruzmetov D, Burke RA, Lerach JO, Ivanov TG, Haque M, Feenstra RM, Robinson JA. Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides. Nanoscale. PMID 29215125 DOI: 10.1039/C7Nr07586C |
0.339 |
|
| 2017 |
Yang Y, Cheng G, Mende P, Calizo IG, Feenstra RM, Chuang C, Liu CW, Liu CI, Jones GR, Hight Walker AR, Elmquist RE. Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices. Carbon. 115: 229-236. PMID 28924301 DOI: 10.1016/J.Carbon.2016.12.087 |
0.401 |
|
| 2017 |
Yan W, Sitaputra W, Skowronski M, Feenstra RM. Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces Journal of Applied Physics. 122: 124305. DOI: 10.1063/1.5004982 |
0.431 |
|
| 2017 |
Mende P, Gao Q, Ismach A, Chou H, Widom M, Ruoff R, Colombo L, Feenstra R. Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy Surface Science. 659: 31-42. DOI: 10.1016/J.Susc.2017.02.004 |
0.457 |
|
| 2017 |
Subramanian S, Deng DD, Xu K, Simonson N, Wang K, Zhang K, Li J, Feenstra R, Fullerton-Shirey SK, Robinson JA. Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures Carbon. 125: 551-556. DOI: 10.1016/J.Carbon.2017.09.058 |
0.388 |
|
| 2016 |
Lin YC, Li J, de la Barrera SC, Eichfeld SM, Nie Y, Addou R, Mende PC, Wallace RM, Cho K, Feenstra RM, Robinson JA. Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures. Nanoscale. PMID 27073972 DOI: 10.1039/C6Nr01902A |
0.788 |
|
| 2016 |
Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. Acs Nano. PMID 26991824 DOI: 10.1021/Acsnano.5B07698 |
0.365 |
|
| 2016 |
Gopalan DP, Mende PC, De La Barrera SC, Dhingra S, Li J, Zhang K, Simonson NA, Robinson JA, Lu N, Wang Q, Kim MJ, D'Urso B, Feenstra RM. Formation of hexagonal boron nitride on graphene-covered copper surfaces Journal of Materials Research. 31: 945-958. DOI: 10.1557/Jmr.2016.82 |
0.425 |
|
| 2016 |
De La Barrera SC, Lin YC, Eichfeld SM, Robinson JA, Gao Q, Widom M, Feenstra RM. Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4954642 |
0.44 |
|
| 2016 |
Li J, Nie Y, Cho K, Feenstra RM. Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method Journal of Electronic Materials. 46: 1378-1389. DOI: 10.1007/S11664-016-5120-2 |
0.313 |
|
| 2015 |
Zhang C, Chen Y, Johnson A, Li MY, Li LJ, Mende PC, Feenstra RM, Shih CK. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2. Nano Letters. 15: 6494-500. PMID 26389585 DOI: 10.1021/Acs.Nanolett.5B01968 |
0.326 |
|
| 2015 |
Sitaputra W, Skowronski M, Feenstra RM. Topographic and electronic structure of cleaved SrTiO3(001) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916890 |
0.352 |
|
| 2015 |
Gao Q, Mende PC, Widom M, Feenstra RM. Inelastic effects in low-energy electron reflectivity of two-dimensional materials Journal of Vacuum Science & Technology B. 33. DOI: 10.1116/1.4903361 |
0.383 |
|
| 2015 |
Sitaputra W, Sivadas N, Skowronski M, Xiao D, Feenstra RM. Oxygen vacancies on SrO-terminated SrTi O3(001) surfaces studied by scanning tunneling spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.205408 |
0.393 |
|
| 2015 |
Barrera SCdl, Feenstra RM. Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures Applied Physics Letters. 106: 93115. DOI: 10.1063/1.4914324 |
0.376 |
|
| 2015 |
Park SW, Kim H, Chagarov E, Siddiqui S, Sahu B, Yoshida N, Kachian J, Feenstra R, Kummel AC. Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g) Surface Science. DOI: 10.1016/J.Susc.2016.01.009 |
0.417 |
|
| 2014 |
Liu FH, Lo ST, Chuang C, Woo TP, Lee HY, Liu CW, Liu CI, Huang LI, Liu CH, Yang Y, Chang CY, Li LJ, Mende PC, Feenstra RM, Elmquist RE, et al. Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling. Nanoscale. 6: 10562-8. PMID 25117572 DOI: 10.1039/C4Nr02980A |
0.334 |
|
| 2014 |
Clark KW, Zhang XG, Gu G, Park J, He G, Feenstra RM, Li AP. Energy gap induced by friedel oscillations manifested as transport asymmetry at Monolayer-Bilayer graphene boundaries Physical Review X. 4. DOI: 10.1103/Physrevx.4.011021 |
0.377 |
|
| 2014 |
Roy T, Liu L, De La Barrera S, Chakrabarti B, Hesabi ZR, Joiner CA, Feenstra RM, Gu G, Vogel EM. Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions Applied Physics Letters. 104. DOI: 10.1063/1.4870073 |
0.362 |
|
| 2014 |
He G, Srivastava N, Feenstra RM. Formation of a Buffer Layer for Graphene on C-Face SiC{0001} Journal of Electronic Materials. 43: 819-827. DOI: 10.1007/S11664-013-2901-8 |
0.683 |
|
| 2013 |
Clark KW, Zhang XG, Vlassiouk IV, He G, Feenstra RM, Li AP. Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene. Acs Nano. 7: 7956-66. PMID 23952068 DOI: 10.1021/Nn403056K |
0.355 |
|
| 2013 |
Park J, He G, Feenstra RM, Li A. Atomic-scale mapping of thermoelectric power on graphene: role of defects and boundaries. Nano Letters. 13: 3269-3273. PMID 23731127 DOI: 10.1021/Nl401473J |
0.404 |
|
| 2013 |
Srivastava N, Gao Q, Widom M, Feenstra RM, Nie S, McCarty KF, Vlassiouk IV. Low-energy electron reflectivity of graphene on copper and other substrates Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.245414 |
0.646 |
|
| 2013 |
Feenstra RM, Srivastava N, Gao Q, Widom M, Diaconescu B, Ohta T, Kellogg GL, Robinson JT, Vlassiouk IV. Low-energy electron reflectivity from graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.041406 |
0.634 |
|
| 2013 |
Vlassiouk I, Smirnov S, Regmi M, Surwade SP, Srivastava N, Feenstra R, Eres G, Parish C, Lavrik N, Datskos P, Dai S, Fulvio P. Graphene nucleation density on copper: Fundamental role of background pressure Journal of Physical Chemistry C. 117: 18919-18926. DOI: 10.1021/Jp4047648 |
0.62 |
|
| 2013 |
Feenstra RM, Widom M. Low-energy electron reflectivity from graphene: First-principles computations and approximate models Ultramicroscopy. 130: 101-108. DOI: 10.1016/J.Ultramic.2013.02.011 |
0.414 |
|
| 2012 |
Feenstra RM, Bussetti G, Bonanni B, Violante A, Goletti C, Chiaradia P, Betti MG, Mariani C. Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 354009. PMID 22899177 DOI: 10.1088/0953-8984/24/35/354009 |
0.357 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661 |
0.629 |
|
| 2012 |
Srivastava N, He G, Feenstra RM. Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment Materials Science Forum. 609: 609-612. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.609 |
0.667 |
|
| 2012 |
He G, Srivastava N, Feenstra RM. Formation of graphene on SiC(0001¯) surfaces in disilane and neon environments Journal of Vacuum Science & Technology B. 30. DOI: 10.1116/1.4718365 |
0.667 |
|
| 2012 |
Srivastava N, He G, Luxmi, Feenstra RM. Interface structure of graphene on SiC(0001̄) Physical Review B. 85: 41404. DOI: 10.1103/Physrevb.85.041404 |
0.673 |
|
| 2012 |
Srivastava N, He G, Luxmi, Mende PC, Feenstra RM, Sun Y. Graphene Formed on SiC Under Various Environments: Comparison of Si-Face and C-Face Journal of Physics D. 45: 154001. DOI: 10.1088/0022-3727/45/15/154001 |
0.693 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489 |
0.637 |
|
| 2012 |
Feenstra RM, Jena D, Gu G. Single-particle tunneling in doped graphene-insulator-graphene junctions Journal of Applied Physics. 111. DOI: 10.1063/1.3686639 |
0.366 |
|
| 2012 |
Gaan S, Feenstra RM, Ebert P, Dunin-Borkowski RE, Walker J, Towe E. Structure and electronic spectroscopy of steps on GaAs(110) surfaces Surface Science. 606: 28-33. DOI: 10.1016/J.Susc.2011.08.017 |
0.402 |
|
| 2011 |
Bussetti G, Bonanni B, Cirilli S, Violante A, Russo M, Goletti C, Chiaradia P, Pulci O, Palummo M, Del Sole R, Gargiani P, Betti MG, Mariani C, Feenstra RM, Meyer G, et al. Coexistence of negatively and positively buckled isomers on n+-doped Si(111) − 2 × 1. Physical Review Letters. 106: 067601. PMID 21405496 DOI: 10.1103/Physrevlett.106.067601 |
0.436 |
|
| 2010 |
Huang L, Hartland GV, Chu LQ, Luxmi, Feenstra RM, Lian C, Tahy K, Xing H. Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene. Nano Letters. 10: 1308-13. PMID 20210348 DOI: 10.1021/Nl904106T |
0.37 |
|
| 2010 |
Luxmi, Srivastava N, Feenstra RM, Fisher PJ. Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5C1-C5C7. DOI: 10.1116/1.3420393 |
0.681 |
|
| 2010 |
Fisher PJ, Luxmi, Srivastava N, Nie S, Feenstra RM. Thickness monitoring of graphene on SiC using low-energy electron diffraction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 958-962. DOI: 10.1116/1.3301621 |
0.637 |
|
| 2010 |
Luxmi, Srivastava N, He G, Feenstra RM, Fisher PJ. Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.235406 |
0.676 |
|
| 2010 |
Gaan S, He G, Feenstra RM, Walker J, Towe E. Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy Journal of Applied Physics. 108: 114315. DOI: 10.1063/1.3518680 |
0.348 |
|
| 2010 |
Gaan S, He G, Feenstra RM, Walker J, Towe E. Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy Applied Physics Letters. 97: 123110. DOI: 10.1063/1.3491551 |
0.341 |
|
| 2009 |
Nie S, Feenstra RM. Tunneling spectroscopy of graphene and related reconstructions on SiC(0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 1052-1057. DOI: 10.1116/1.3071977 |
0.475 |
|
| 2009 |
Ishida N, Sueoka K, Feenstra RM. Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces Physical Review B. 80: 75320. DOI: 10.1103/Physrevb.80.075320 |
0.404 |
|
| 2009 |
Fisher PJ, Srivastava N, Feenstra RM, Sun Y, Kedzierski J, Healey P, Gu G, Luxmi. Morphology of graphene on SiC (000 1-) surfaces Applied Physics Letters. 95. DOI: 10.1063/1.3207757 |
0.678 |
|
| 2009 |
Timm R, Feenstra RM, Eisele H, Lenz A, Ivanova L, Lenz E, Dahne M. Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures Journal of Applied Physics. 105: 93718. DOI: 10.1063/1.3117492 |
0.34 |
|
| 2009 |
Feenstra RM. A Prospective: Quantitative Scanning Tunneling Spectroscopy of Semiconductor Surfaces Surface Science. 603: 2841-2844. DOI: 10.1016/J.Susc.2009.08.002 |
0.379 |
|
| 2009 |
Gu G, Luxmi, Fisher PJ, Srivastava N, Feenstra RM. The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics Solid State Communications. 149: 2194-2198. DOI: 10.1016/J.Ssc.2009.09.014 |
0.655 |
|
| 2009 |
Luxmi, Nie S, Fisher PJ, Feenstra RM, Gu G, Sun Y. Temperature dependence of epitaxial graphene formation on SiC(0001) Journal of Electronic Materials. 38: 718-724. DOI: 10.1007/S11664-008-0584-3 |
0.473 |
|
| 2008 |
Constantin C, sun k, Feenstra RM. Nucleation and Stochiometry Dependence of Rutile-TiO 2 (001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A09-32 |
0.707 |
|
| 2008 |
Soukiassian A, Tian W, Vaithyanathan V, Haeni JH, Chen LQ, Xi XX, Schlom DG, Tenne DA, Sun HP, Pan XQ, Choi KJ, Eom CB, Li YL, Jia QX, Constantin C, ... Feenstra RM, et al. Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy Journal of Materials Research. 23: 1417-1432. DOI: 10.1557/Jmr.2008.0181 |
0.71 |
|
| 2008 |
Dong Y, Feenstra RM, Semtsiv MP, Masselink WT. Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy Journal of Applied Physics. 103: 73704. DOI: 10.1063/1.2902828 |
0.301 |
|
| 2008 |
Nie S, Feenstra RM, Ke Y, Devaty RP, Choyke WJ. Electronic states of chemically treated SiC surfaces Journal of Applied Physics. 103: 13709. DOI: 10.1063/1.2829804 |
0.409 |
|
| 2008 |
Nie S, Lee CD, Feenstra RM, Ke Y, Devaty RP, Choyke WJ, Inoki CK, Kuan TS, Gu G. Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces Surface Science. 602: 2936-2942. DOI: 10.1016/J.Susc.2008.07.021 |
0.398 |
|
| 2008 |
Rinehimer JA, Widom M, Northrup JE, Feenstra RM. Molecular dynamics and first-principles computations of Ga adlayers on GaN(0001) Physica Status Solidi (B) Basic Research. 245: 920-923. DOI: 10.1002/Pssb.200778676 |
0.34 |
|
| 2007 |
Feenstra RM, Dong Y, Semtsiv MP, Masselink WT. Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces Nanotechnology. 18: 44015. DOI: 10.1088/0957-4484/18/4/044015 |
0.394 |
|
| 2007 |
Gu G, Nie S, Feenstra RM, Devaty RP, Choyke WJ, Chan WK, Kane MG. Field effect in epitaxial graphene on a silicon carbide substrate Applied Physics Letters. 90: 253507. DOI: 10.1063/1.2749839 |
0.389 |
|
| 2006 |
Ke Y, Moisson C, Gaan S, Feenstra RM, Devaty RP, Choyke WJ. A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC Materials Science Forum. 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.743 |
0.396 |
|
| 2006 |
Nie S, Feenstra RM. Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces Materials Science Forum. 1023-1026. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1023 |
0.394 |
|
| 2006 |
Dong Y, Feenstra RM, Northrup JE. Oxidized GaN(0001) surfaces studied by scanning tunneling microscopy and spectroscopy and by first-principles theory Journal of Vacuum Science & Technology B. 24: 2080-2086. DOI: 10.1116/1.2214713 |
0.442 |
|
| 2006 |
Feenstra RM, Lee JY, Kang MH, Meyer G, Rieder KH. Band Gap of the Ge(111)c(2×8) Surface by Scanning Tunneling Spectroscopy Physical Review B. 73: 35310. DOI: 10.1103/Physrevb.73.035310 |
0.37 |
|
| 2006 |
Dong Y, Feenstra RM, Northrup JE. Electronic states of oxidized GaN(0001) surfaces Applied Physics Letters. 89: 171920. DOI: 10.1063/1.2370519 |
0.41 |
|
| 2006 |
Yun F, Moon Y, Fu Y, Zhu K, Ozgür Ü, Morkoç H, Inoki CK, Kuan TS, Sagar A, Feenstra RM. Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by
organometallic vapor-phase epitaxy” [J. Appl. Phys.
98, 123502
(2005)] Journal of Applied Physics. 99: 069902. DOI: 10.1063/1.2183607 |
0.311 |
|
| 2006 |
Moon Y, Xie J, Liu C, Fu Y, Ni X, Biyikli N, Zhu K, Yun F, Morkoç H, Sagar A, Feenstra R. A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers Journal of Crystal Growth. 291: 301-308. DOI: 10.1016/J.Jcrysgro.2006.03.010 |
0.4 |
|
| 2005 |
Feenstra RM, Dong Y, Lee CD, Northrup JE. Recent developments in surface studies of GaN and AlN Journal of Vacuum Science & Technology B. 23: 1174-1180. DOI: 10.1116/1.1881612 |
0.452 |
|
| 2005 |
Feenstra RM, Gaan S, Meyer G, Rieder KH. Low-temperature tunneling spectroscopy of Ge(111)c(2×8) surfaces Physical Review B. 71: 125316. DOI: 10.1103/Physrevb.71.125316 |
0.384 |
|
| 2005 |
Yun F, Moon YT, Fu Y, Zhu K, Ozgür U, Morko̧ H, Inoki CK, Kuan TS, Sagar A, Feenstra RM. Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy Journal of Applied Physics. 98. DOI: 10.1063/1.2142074 |
0.392 |
|
| 2005 |
Dong Y, Feenstra RM, Greve DW, Moore JC, Sievert MD, Baski AA. Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1890482 |
0.35 |
|
| 2005 |
Dong Y, Feenstra RM. Effects of hydrogen during molecular beam epitaxy of GaN Physica Status Solidi (C). 2: 2183-2186. DOI: 10.1002/Pssc.200461464 |
0.345 |
|
| 2005 |
Sagar A, Feenstra RM, Inoki CK, Kuan TS, Fu Y, Moon YT, Yun F, Morkoç H. Dislocation density reduction in GaN using porous SiN interlayers Physica Status Solidi (a) Applications and Materials Science. 202: 722-726. DOI: 10.1002/Pssa.200461486 |
0.363 |
|
| 2004 |
Feenstra RM, Meyer G, Rieder KH. Transport limitations in tunneling spectroscopy of Ge ( 111 ) c ( 2 × 8 ) surfaces Physical Review B. 69: 81309. DOI: 10.1103/Physrevb.69.081309 |
0.414 |
|
| 2004 |
Dong Y, Feenstra RM, Semtsiv MP, Masselink WT. Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions Applied Physics Letters. 84: 227-229. DOI: 10.1063/1.1638637 |
0.376 |
|
| 2003 |
Neugebauer J, Zywietz TK, Scheffler M, Northrup JE, Chen H, Feenstra RM. Adatom kinetics on and below the surface: the existence of a new diffusion channel. Physical Review Letters. 90: 056101. PMID 12633378 DOI: 10.1103/Physrevlett.90.056101 |
0.367 |
|
| 2003 |
Sagar A, Feenstra RM, Inoki CK, Kuan TS, Koleske DD. Combined MOCVD and MBE growth of GaN on porous SiC Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y9.6 |
0.374 |
|
| 2003 |
Lee CD, Dong Y, Feenstra RM, Northrup JE, Neugebauer J. Growth and Surface Reconstructions of AlN(0001) Films Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y3.5 |
0.446 |
|
| 2003 |
Feenstra RM, Meyer G, Moresco F, Rieder KH. Low-temperature scanning tunneling spectroscopy of semiconductor surfaces Acta Physica Polonica A. 104: 205-216. DOI: 10.12693/Aphyspola.104.205 |
0.43 |
|
| 2003 |
Sagar A, Lee CD, Feenstra RM, Inoki CK, Kuan TS. Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity Journal of Vacuum Science & Technology B. 21: 1812-1817. DOI: 10.1116/1.1589513 |
0.378 |
|
| 2003 |
McKay HA, Chen H, Feenstra RM, Poole PJ. Scanning tunneling microscopy images of III–V semiconductor alloys: Strain effects Journal of Vacuum Science & Technology B. 21: 18-22. DOI: 10.1116/1.1529651 |
0.305 |
|
| 2003 |
Lee CD, Dong Y, Feenstra RM, Northrup JE, Neugebauer J. Reconstructions of the AlN(0001) Surface Physical Review B. 68. DOI: 10.1103/Physrevb.68.205317 |
0.472 |
|
| 2003 |
Cobet C, Schmidtling T, Drago M, Wollschläger N, Esser N, Richter W, Feenstra RM, Kampen TU. Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry Journal of Applied Physics. 94: 6997-6999. DOI: 10.1063/1.1623630 |
0.386 |
|
| 2003 |
Lee CD, Feenstra RM, Northrup JE, Lymperakis L, Neugebauer J. Morphology and surface reconstructions of GaN(1100) surfaces Applied Physics Letters. 82: 1793-1795. DOI: 10.1063/1.1560558 |
0.433 |
|
| 2003 |
McKay HA, Feenstra RM, Poole PJ, Aers GC. Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence Journal of Crystal Growth. 249: 437-444. DOI: 10.1016/S0022-0248(02)02224-8 |
0.336 |
|
| 2003 |
McKay HA, Feenstra RM. Low energy electron microscopy of indium on Si(0 0 1) surfaces Surface Science. 547: 127-138. DOI: 10.1016/J.Susc.2003.09.043 |
0.394 |
|
| 2003 |
Cobet C, Schmidtling T, Drago M, Wollschlager N, Esser N, Richter W, Feenstra RM. In-situ ellipsometry: Identification of surface terminations during GaN growth Physica Status Solidi C: Conferences. 2938-2943. DOI: 10.1002/Pssc.200303833 |
0.41 |
|
| 2003 |
Inoki CK, Kuan TS, Sagar A, Lee CD, Feenstra RM, Koleske DD, Diaz DJ, Bohn PW, Adesida I. Growth of GaN on porous SiC and GaN substrates Physica Status Solidi (a) Applied Research. 200: 44-47. DOI: 10.1002/Pssa.200303542 |
0.438 |
|
| 2002 |
Feenstra RM, Northrup JE, Neugebauer J. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces Mrs Internet Journal of Nitride Semiconductor Research. 7: 1-27. DOI: 10.1557/S1092578300000296 |
0.47 |
|
| 2002 |
Lee CD, Feenstra RM, Shigiltchoff O, Devaty RP, Choyke WJ. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) Mrs Internet Journal of Nitride Semiconductor Research. 7. DOI: 10.1557/S1092578300000284 |
0.357 |
|
| 2002 |
Lee CD, Feenstra RM, Northrup JE, Lymperakis L, Neugebauer J. Morphology and surface reconstructions of m-plane GaN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L4.1 |
0.438 |
|
| 2002 |
Inoki CK, Kuan TS, Lee CD, Sagar A, Feenstra RM. Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K1.3 |
0.441 |
|
| 2002 |
Dong Y, Feenstra RM, Hey R, Ploog KH. Scanning tunneling potentiometry of semiconductor junctions Journal of Vacuum Science & Technology B. 20: 1677-1681. DOI: 10.1116/1.1491535 |
0.326 |
|
| 2002 |
Feenstra RM, Meyer G, Moresco F, Rieder KH. Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces Physical Review B. 66: 165204. DOI: 10.1103/Physrevb.66.165204 |
0.395 |
|
| 2002 |
Sagar A, Lee CD, Feenstra RM, Inoki CK, Kuan TS. Morphology and effects of hydrogen etching of porous SiC Journal of Applied Physics. 92: 4070-4074. DOI: 10.1063/1.1501749 |
0.342 |
|
| 2002 |
Rosa AL, Neugebauer J, Northrup JE, Lee CD, Feenstra RM. Adsorption and incorporation of silicon at GaN(0001) surfaces Applied Physics Letters. 80: 2008-2010. DOI: 10.1063/1.1452785 |
0.413 |
|
| 2001 |
Chen H, Feenstra RM, Northrup JE, Neugebauer J, Greve DW. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory Mrs Internet Journal of Nitride Semiconductor Research. 6. DOI: 10.1557/S1092578300000235 |
0.417 |
|
| 2001 |
Lee CD, Feenstra RM, Shigiltchoff O, Devatya RP, Choyke WJ. Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001) Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I3.40.1 |
0.356 |
|
| 2001 |
Lee CD, Feenstra RM, Rosa ALd, Neugebauer J, Northrup JE. Silicon on GaN(0001) and (0001̄) surfaces Journal of Vacuum Science & Technology B. 19: 1619-1625. DOI: 10.1116/1.1383074 |
0.449 |
|
| 2001 |
McKay HA, Feenstra RM, Schmidtling T, Pohl UW, Geisz JF. Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy Journal of Vacuum Science & Technology B. 19: 1644-1649. DOI: 10.1116/1.1379967 |
0.361 |
|
| 2001 |
Feenstra RM, Meyer G, Moresco F, Rieder KH. Buckling and band gap of the Ge ( 111 ) 2 × 1 surface studied by low-temperature scanning tunneling microscopy Physical Review B. 64: 81306. DOI: 10.1103/Physrevb.64.081306 |
0.429 |
|
| 2001 |
Lee CD, Sagar A, Feenstra RM, Inoki CK, Kuan TS, Sarney WL, Salamanca-Riba L. Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) Applied Physics Letters. 79: 3428-3430. DOI: 10.1063/1.1421091 |
0.393 |
|
| 2001 |
McKay HA, Feenstra RM, Schmidtling T, Pohl UW. Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy Applied Physics Letters. 78: 82-84. DOI: 10.1063/1.1337625 |
0.415 |
|
| 2001 |
Lee CD, Ramachandran V, Sagar A, Feenstra RM, Greve DW, Sarney WL, Salamanca-Riba L, Look DC, Bai S, Choyke WJ, Devaty RP. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy Journal of Electronic Materials. 30: 162-169. DOI: 10.1007/S11664-001-0010-6 |
0.419 |
|
| 2001 |
Feenstra RM, Ramachandran V, Chen H. Recent developments in scanning tunneling spectroscopy of semiconductor surfaces Applied Physics A. 72: 193-199. DOI: 10.1007/S003390100718 |
0.444 |
|
| 2001 |
Lee CD, Sagar A, Feenstra RM, Sarney WL, Salamanca-Riba L, Hsu JWP. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy Physica Status Solidi (a) Applied Research. 188: 595-599. DOI: 10.1002/1521-396X(200112)188:2<595::Aid-Pssa595>3.0.Co;2-S |
0.364 |
|
| 2000 |
Ramachandran V, Lee CD, Feenstra RM, Smith AR, Greve DW. Comment on "Structures of GaN(0001)bf-(2x2), bf-(4x4), and bf-(5x5) surface reconstructions" Physical Review Letters. 84: 4014. PMID 11019263 DOI: 10.1103/Physrevlett.84.4014 |
0.605 |
|
| 2000 |
Hartman JD, Naniwae K, Petrich C, Ramachandran V, Feenstra RM, Nemanich RJ, Davis RF. Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001) Materials Science Forum. 353-356. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.353 |
0.314 |
|
| 2000 |
Ramachandran V, Feenstra RM, Northrup JE, Greve DW. Surface activity of magnesium during GaN molecular beam epitaxial growth Mrs Internet Journal of Nitride Semiconductor Research. 5: 280-286. DOI: 10.1557/S1092578300004397 |
0.361 |
|
| 2000 |
Sarney WL, Salamanca-Riba L, Ramachandran V, Feenstra RM, Grève DW. TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004336 |
0.342 |
|
| 2000 |
Chen H, Feenstra RM, Northrup JE, Neugebauer J, Greve DW. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G2.6 |
0.363 |
|
| 2000 |
Feenstra RM, Chen H, Ramachandran V, Lee CD, Smith AR, Northrup JE, Zywietz T, Neugebauer J, Greve DW. SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY Surface Review and Letters. 7: 601-606. DOI: 10.1142/S0218625X00000804 |
0.69 |
|
| 2000 |
Ramachandran V, Feenstra RM, Sarney WL, Salamanca-Riba L, Greve DW. Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1915-1918. DOI: 10.1116/1.582445 |
0.401 |
|
| 2000 |
Chen H, Feenstra RM, Northrup JE, Zywietz T, Neugebauer J, Greve DW. Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. 18: 2284-2289. DOI: 10.1116/1.1306296 |
0.46 |
|
| 2000 |
Northrup JE, Neugebauer J, Feenstra RM, Smith AR. Structure of GaN(0001): The laterally contracted Ga bilayer model Physical Review B. 61: 9932-9935. DOI: 10.1103/Physrevb.61.9932 |
0.646 |
|
| 2000 |
Feenstra RM, Chen H, Ramachandran V, Smith AR, Greve DW. Reconstructions of GaN and InGaN surfaces Applied Surface Science. 166: 165-172. DOI: 10.1016/S0169-4332(00)00401-3 |
0.695 |
|
| 2000 |
Ramachandran V, Lee CD, Feenstra RM, Smith AR, Northrup JE, Greve DW. Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces Journal of Crystal Growth. 209: 355-363. DOI: 10.1016/S0022-0248(99)00570-9 |
0.67 |
|
| 1999 |
Chen H, Smith AR, Feenstra RM, Greve DW, Northrup JE. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 858-863. DOI: 10.1557/S1092578300003537 |
0.63 |
|
| 1999 |
Ramachandran V, Feenstra RM, Northrup JE, Greve DW. Surface activity of magnesium during GaN molecular beam epitaxial growth Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.65 |
0.404 |
|
| 1999 |
Ramachandran V, Smith AR, Feenstra RM, Greve DW. Temperature dependence of molecular beam epitaxy of GaN on SiC (0001) Journal of Vacuum Science and Technology. 17: 1289-1293. DOI: 10.1116/1.581810 |
0.638 |
|
| 1999 |
Grandidier B, Feenstra RM, Silfvenius C, Landgren G. Compositional variations in strain-compensated InGaAsP/InAsP superlattices studied by scanning tunneling microscopy Journal of Vacuum Science and Technology. 17: 2251-2256. DOI: 10.1116/1.581756 |
0.419 |
|
| 1999 |
Feenstra RM. Tunneling spectroscopy of the Si ( 111 ) 2 × 1 surface Physical Review B. 60: 4478-4480. DOI: 10.1103/Physrevb.60.4478 |
0.412 |
|
| 1999 |
Ramachandran V, Feenstra RM, Sarney WL, Salamanca-Riba L, Northrup JE, Romano LT, Greve DW. Inversion of wurtzite GaN(0001) by exposure to magnesium Applied Physics Letters. 75: 808-810. DOI: 10.1063/1.124520 |
0.335 |
|
| 1999 |
Grandidier B, Chen H, Feenstra RM, McInturtf DT, Juodawlkis PW, Ralph SE. Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs Applied Physics Letters. 74: 1439-1441. DOI: 10.1063/1.123575 |
0.361 |
|
| 1999 |
Feenstra RM. Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions Physica B-Condensed Matter. 273: 796-802. DOI: 10.1016/S0921-4526(99)00507-4 |
0.374 |
|
| 1999 |
Smith A, Feenstra R, Greve D, Shin M, Skowronski M, Neugebauer J, Northrup J. GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations Surface Science. 423: 70-84. DOI: 10.1016/S0039-6028(98)00903-0 |
0.679 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Ptak A, Myers T, Sarney W, Salamanca-Riba L, Shin M, Skowronski M. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000843 |
0.694 |
|
| 1998 |
Chen H, Smith AR, Feenstra RM, Greve DW, Northrup JE. SCANNING TUNNELING MICROSCOPY STUDIES OF InGaN GROWTH BY MOLECULAR BEAM EPITAXY Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G9.5 |
0.668 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Shin M-, Skowronski M, Neugebauer J, Northrup JE. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction Journal of Vacuum Science and Technology. 16: 1641-1645. DOI: 10.1116/1.581134 |
0.668 |
|
| 1998 |
Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN, Feenstra RM. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers Journal of Applied Physics. 83: 5137-5149. DOI: 10.1063/1.367331 |
0.538 |
|
| 1998 |
Smith AR, Feenstra RM, Greve DW, Shin M, Skowronski M, Neugebauer J, Northrup JE. Determination of wurtzite GaN lattice polarity based on surface reconstruction Applied Physics Letters. 72: 2114-2116. DOI: 10.1063/1.121293 |
0.647 |
|
| 1998 |
Piva PG, Goldberg RD, Mitchell IV, Chen H, Feenstra RM, Weatherly GC, McComb DW, Aers GC, Poole PJ, Charbonneau S. A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Applied Physics Letters. 72: 1599-1601. DOI: 10.1063/1.121185 |
0.318 |
|
| 1998 |
Chen H, Feenstra RM, Goldman RS, Silfvenius C, Landgren G. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Applied Physics Letters. 72: 1727-1729. DOI: 10.1063/1.121165 |
0.542 |
|
| 1998 |
Saraf RF, Ostrander S, Feenstra RM. Surface-influenced phase separation in organic thin films on drying Langmuir. 14: 483-489. DOI: 10.1021/La960987B |
0.331 |
|
| 1998 |
Pavlovska A, Bauer E, Torres VM, Edwards JL, Doak RB, Tsong IST, Ramachandran V, Feenstra RM. In situ real-time studies of GaN growth on 6H-SiC(0 0 0 1) by low-energy electron microscopy (LEEM) Journal of Crystal Growth. 189: 310-316. DOI: 10.1016/S0022-0248(98)00273-5 |
0.427 |
|
| 1998 |
Ramachandran V, Brady MF, Smith AR, Feenstra RM, Greve DW. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching Journal of Electronic Materials. 27: 308-312. DOI: 10.1007/S11664-998-0406-7 |
0.671 |
|
| 1998 |
Smith AR, Feenstra RM, Greve DW, Neugebauer J, Northrup JE. Scanning tunneling microscopy of the GaN(000\(\bar{1}\)) surface Applied Physics A. 66. DOI: 10.1007/S003390051272 |
0.682 |
|
| 1997 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Neugebauer J, Northrup JE, Shin M, Skowronski M. Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC Mrs Proceedings. 482: 363. DOI: 10.1557/Proc-482-363 |
0.672 |
|
| 1997 |
Goldman RS, Feenstra RM, Silfvenius C, Stålnacke B, Landgren G. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1027-1033. DOI: 10.1116/1.589387 |
0.579 |
|
| 1997 |
Smith AR, Feenstra RM, Greve DW, Neugebauer J, Northrup JE. Reconstructions of the GaN\(0001̄\) Surface Physical Review Letters. 79: 3934-3937. DOI: 10.1103/Physrevlett.79.3934 |
0.699 |
|
| 1997 |
Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs Journal of Electronic Materials. 26: 1342-1348. DOI: 10.1007/S11664-997-0082-Z |
0.579 |
|
| 1996 |
Briner BG, Feenstra RM, Chin TP, Woodall JM. Growth and transport properties of thin Bi films on InP(110) Semiconductor Science and Technology. 11: 1575-1581. DOI: 10.1088/0268-1242/11/11S/021 |
0.414 |
|
| 1996 |
Goldman RS, Kavanagh KL, Wieder HH, Bobbins VM, Ehrlich SN, Feenstra RM. Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases Journal of Applied Physics. 80: 6849-6854. DOI: 10.1063/1.363751 |
0.723 |
|
| 1996 |
Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Atomic-scale structure and electronic properties of GaN/GaAs superlattices Applied Physics Letters. 69: 3698-3700. DOI: 10.1063/1.117193 |
0.598 |
|
| 1995 |
Lutz MA, Feenstra RM, Chu JO. Atomic force microscopy studies of SiGe films and Si/SiGe heterostructures Ibm Journal of Research and Development. 39: 629-638. DOI: 10.1147/Rd.396.0629 |
0.31 |
|
| 1995 |
Wang MW, Collins DA, McGill TC, Grant RW, Feenstra RM. Study of interface asymmetry in InAs-GaSb heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1689-1693. DOI: 10.1116/1.587879 |
0.568 |
|
| 1995 |
Feenstra RM, Lutz MA, Stern F, Ismail K, Mooney PM, LeGoues FK, Stanis C, Chu JO, Meyerson BS. Roughness analysis of Si/SiGe heterostructures Journal of Vacuum Science & Technology B. 13: 1608-1612. DOI: 10.1116/1.587865 |
0.435 |
|
| 1995 |
Lutz MA, Feenstra RM, LeGoues FK, Mooney PM, Chu JO. Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)] Applied Physics Letters. 67: 724-724. DOI: 10.1063/1.115287 |
0.362 |
|
| 1995 |
Mooney PM, Jordan‐Sweet JL, Ismail K, Chu JO, Feenstra RM, LeGoues FK. Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices Applied Physics Letters. 67: 2373-2375. DOI: 10.1063/1.114349 |
0.354 |
|
| 1995 |
Wang MW, Collins DA, McGill TC, Grant RW, Feenstra RM. Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset Applied Physics Letters. 2981. DOI: 10.1063/1.114250 |
0.536 |
|
| 1995 |
Lutz MA, Feenstra RM, LeGoues FK, Mooney PM, Chu JO. Influence of misfit dislocations on the surface morphology of Si1−xGex films Applied Physics Letters. 66: 724-726. DOI: 10.1063/1.114112 |
0.419 |
|
| 1995 |
Lutz MA, Feenstra RM, Chu JO. Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces Surface Science. 328: 215-226. DOI: 10.1016/0039-6028(95)00038-0 |
0.431 |
|
| 1994 |
Feenstra RM, Collins DA, Ting DZ, Wang MW, McGill TC. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy. Physical Review Letters. 72: 2749-2752. PMID 10055967 DOI: 10.1103/Physrevlett.72.2749 |
0.563 |
|
| 1994 |
Feenstra RM, Lutz MA, Copel M. Roughness Analysis of Si 1-χ Ge χ Films Mrs Proceedings. 355: 301. DOI: 10.1557/Proc-355-301 |
0.423 |
|
| 1994 |
Feenstra RM, Vaterlaus A, Woodall JM, Collins DA, McGill TC. Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures Mrs Proceedings. 332. DOI: 10.1557/Proc-332-15 |
0.551 |
|
| 1994 |
Feenstra RM. Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12: 2592. DOI: 10.1116/1.587215 |
0.404 |
|
| 1994 |
Feenstra RM, Collins DA, Ting DZY, Wang MW, McGill TC. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy Physical Review Letters. 72: 2749-2752. DOI: 10.1103/PhysRevLett.72.2749 |
0.514 |
|
| 1994 |
Johnson MB, Albrektsen O, Feenstra RM, Salemink HW. Erratum: Direct imaging of dopants in GaAs with cross‐sectional scanning tunneling microscopy [Appl. Phys. Lett. 63, 2923 (1993)] Applied Physics Letters. 64: 1454-1454. DOI: 10.1063/1.111999 |
0.327 |
|
| 1994 |
Lutz MA, Feenstra RM, Mooney PM, Tersoff J, Chu JO. Facet formation in strained Si1−x Gex films Surface Science. 316. DOI: 10.1016/0039-6028(94)91208-4 |
0.351 |
|
| 1994 |
Feenstra RM. Scanning tunneling spectroscopy Surface Science. 965-979. DOI: 10.1016/0039-6028(94)90710-2 |
0.411 |
|
| 1994 |
Feenstra RM, Collins DA, McGill TC. Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions Superlattices and Microstructures. 15: 215. DOI: 10.1006/Spmi.1994.1043 |
0.577 |
|
| 1993 |
Feenstra RM, Woodall JM, Pettit GD. Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs Materials Science Forum. 1311-1318. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1311 |
0.367 |
|
| 1993 |
Vaterlaus A, Feenstra RM, Kirchner PD, Woodall JM, Pettit GD. Cross‐sectional scanning tunneling microscopy of epitaxial GaAs structures Journal of Vacuum Science & Technology B. 11: 1502-1508. DOI: 10.1116/1.586959 |
0.403 |
|
| 1993 |
Feenstra RM, Vaterlaus A, Woodall JM, Pettit GD. Tunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs Applied Physics Letters. 63: 2528-2530. DOI: 10.1063/1.110448 |
0.343 |
|
| 1993 |
Johnson MB, Albrektsen O, Feenstra RM, Salemink HWM. Direct imaging of dopants in GaAs with cross‐sectional scanning tunneling microscopy Applied Physics Letters. 63: 2923-2925. DOI: 10.1063/1.110274 |
0.43 |
|
| 1993 |
Feenstra RM, Stroscio JA. 5.3. Gallium Arsenide Methods in Experimental Physics. 27: 251-276. DOI: 10.1016/S0076-695X(08)60012-5 |
0.39 |
|
| 1993 |
Stroscio JA, Feenstra RM. 4 – Methods Of Tunneling Spectroscopy Methods in Experimental Physics. 27: 95-147. DOI: 10.1016/S0076-695X(08)60009-5 |
0.393 |
|
| 1993 |
Kirchner PD, Vaterlaus A, Feenstra RM, Lin C, Pettit GD, Woodall JM. Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy Journal of Crystal Growth. 127: 1030-1031. DOI: 10.1016/0022-0248(93)90783-S |
0.347 |
|
| 1992 |
Kuan TS, Batson PE, Feenstra RM, Slavin AJ, Tromp RM. Application of electron and ion beam analysis techniques to microelectronics Ibm Journal of Research and Development. 36: 183-207. DOI: 10.1147/Rd.362.0183 |
0.321 |
|
| 1992 |
Pashley MD, Haberern KW, Feenstra RM. Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular‐beam epitaxially grown GaAs(001) Journal of Vacuum Science & Technology B. 10: 1874-1880. DOI: 10.1116/1.586215 |
0.468 |
|
| 1992 |
Feenstra RM, Yu ET, Woodall JM, Kirchner PD, Lin CL, Pettit GD. Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy Applied Physics Letters. 61: 795-797. DOI: 10.1063/1.107804 |
0.353 |
|
| 1992 |
Feenstra RM, Slavin AJ, Held GA, Lutz MA. Edge melting of the Ge(111) surface studied by scanning tunneling microscopy Ultramicroscopy. 33-40. DOI: 10.1016/0304-3991(92)90243-D |
0.333 |
|
| 1992 |
Feenstra RM. Formation of metal/GaAs(110) interfaces studied by scanning tunneling microscopy Applied Surface Science. 104-116. DOI: 10.1016/0169-4332(92)90223-K |
0.379 |
|
| 1991 |
Feenstra RM, Slavin AJ. Scanning tunneling microscopy and spectroscopy of cleaved and annealed Ge(111) surfaces Surface Science. 251: 401-407. DOI: 10.1016/0039-6028(91)91023-Q |
0.425 |
|
| 1991 |
Feenstra RM, Lutz MA. Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopy Surface Science. 243: 151-165. DOI: 10.1016/0039-6028(91)90354-U |
0.382 |
|
| 1990 |
Shih CK, Feenstra RM, Mårtensson P. Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface Journal of Vacuum Science and Technology. 8: 3379-3385. DOI: 10.1116/1.576562 |
0.392 |
|
| 1989 |
Shih CK, Feenstra RM, Kirtley JR, Chandrashekhar GV. Surface structural and electronic properties of cleaved single crystals of Bi2.15Sr1.7CaCu2O8+ delta compounds: A scanning tunneling microscopy study. Physical Review. B, Condensed Matter. 40: 2682-2685. PMID 9992186 DOI: 10.1103/Physrevb.40.2682 |
0.372 |
|
| 1989 |
Ludeke R, Taleb‐Ibrahimi A, Feenstra RM, McLean AB. Structural and electronic properties of Bi/GaAs(110) Journal of Vacuum Science & Technology B. 7: 936-944. DOI: 10.1116/1.584584 |
0.413 |
|
| 1989 |
Feenstra RM. Scanning tunneling microscopy and spectroscopy of gold on the GaAs(110) surface Journal of Vacuum Science & Technology B. 7: 925-930. DOI: 10.1116/1.584582 |
0.397 |
|
| 1989 |
First PN, Dragoset RA, Stroscio JA, Celotta RJ, Feenstra RM. Structure of Cs on GaAs(110) as determined by scanning tunneling microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 2868-2872. DOI: 10.1116/1.576160 |
0.389 |
|
| 1988 |
Feenstra RM, Mårtensson P, Ludeke R. Spectroscopy of Metal Adsorbates on the GaAs(110) Surface Studied with the Scanning Tunneling Microscope Mrs Proceedings. 139: 15. DOI: 10.1557/Proc-139-15 |
0.363 |
|
| 1988 |
Stroscio JA, Feenstra RM. Scanning tunneling spectroscopy of oxygen adsorbates on the GaAs(110) surface Journal of Vacuum Science & Technology B. 6: 1472-1478. DOI: 10.1116/1.584199 |
0.371 |
|
| 1988 |
Kirtley JR, Feenstra RM, Fein AP, Raider SI, Gallagher WJ, Sandstrom R, Dinger T, Shafer MW, Koch R, Laibowitz R, Bumble B. Studies of superconductors using a low‐temperature, high‐field scanning tunneling microscope Journal of Vacuum Science and Technology. 6: 259-262. DOI: 10.1116/1.575438 |
0.375 |
|
| 1988 |
Stroscio JA, Feenstra RM, Newns DM, Fein AP. Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces Journal of Vacuum Science and Technology. 6: 499-507. DOI: 10.1116/1.575368 |
0.416 |
|
| 1988 |
Tersoff J, Feenstra RM, Stroscio JA, Fein AP. Summary Abstract: Structure analysis of the GaAs(110) surface by scanning tunneling microscopy Journal of Vacuum Science and Technology. 6: 497-498. DOI: 10.1116/1.575367 |
0.417 |
|
| 1988 |
Stroscio JA, Feenstra RM. Summary Abstract: Imaging oxygen acceptor states on the GaAs(110) surface Journal of Vacuum Science and Technology. 6: 577-578. DOI: 10.1116/1.575169 |
0.325 |
|
| 1988 |
Feenstra RM, Stroscio JA. Summary Abstract: Reconstruction of steps on the Si(111)2×1 surface Journal of Vacuum Science and Technology. 6: 801-802. DOI: 10.1116/1.575127 |
0.371 |
|
| 1988 |
Mårtensson P, Feenstra RM. Voltage-dependent imaging of antimony on the GaAs(110) surface Journal of Microscopy. 152: 761-769. DOI: 10.1111/J.1365-2818.1988.Tb01447.X |
0.363 |
|
| 1988 |
Kavanagh KL, Capano MA, Hobbs LW, Barbour JC, Marée PMJ, Schaff W, Mayer JW, Pettit D, Woodall JM, Stroscio JA, Feenstra RM. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers Journal of Applied Physics. 64: 4843-4852. DOI: 10.1063/1.341232 |
0.581 |
|
| 1988 |
Feenstra RM, Mårtensson P. Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy. Physical Review Letters. 61: 137-140. DOI: 10.1007/978-94-011-1812-5_18 |
0.381 |
|
| 1987 |
Raider SI, Kirtley JR, Feenstra RM, Fein A. Spatial Variation of Superconducting Gap: STM Measurements for NbN Japanese Journal of Applied Physics. 26: 817-818. DOI: 10.7567/Jjaps.26S3.817 |
0.343 |
|
| 1987 |
Feenstra RM, Stroscio JA. Tunneling spectroscopy of the GaAs(110) surface Journal of Vacuum Science & Technology B. 5: 923-929. DOI: 10.1116/1.583691 |
0.409 |
|
| 1987 |
Stroscio JA, Feenstra RM, Fein AP. Imaging electronic surface states in real space on the Si(111) 2×1 surface Journal of Vacuum Science and Technology. 5: 838-841. DOI: 10.1116/1.574321 |
0.407 |
|
| 1987 |
Feenstra RM, Stroscio JA. Real-Space Determination of Surface Structure by Scanning Tunneling Microscopy Physica Scripta. 1987: 55-60. DOI: 10.1088/0031-8949/1987/T19A/009 |
0.39 |
|
| 1987 |
Kirtley JR, Raider SI, Feenstra RM, Fein AP. Spatial variation of the observed energy gap in granular superconducting NbN films Applied Physics Letters. 50: 1607-1609. DOI: 10.1063/1.97795 |
0.329 |
|
| 1987 |
Fein AP, Kirtley JR, Feenstra RM. Scanning tunneling microscope for low temperature, high magnetic field, and spatially resolved spectroscopy Review of Scientific Instruments. 58: 1806-1810. DOI: 10.1063/1.1139524 |
0.303 |
|
| 1987 |
Feenstra RM, Stroscio JA, Fein AP. Tunneling spectroscopy of the Si(111)2 × 1 surface Surface Science. 181: 295-306. DOI: 10.1016/0039-6028(87)90170-1 |
0.407 |
|
| 1986 |
Feenstra RM, Thompson WA, Fein AP. Real-space observation of π -bonded chains and surface disorder on Si(111)2×1 Physical Review Letters. 56: 608-611. PMID 10033238 DOI: 10.1103/Physrevlett.56.608 |
0.399 |
|
| 1986 |
Feenstra RM, Fein AP. Scanning tunneling microscopy of cleaved semiconductor surfaces Ibm Journal of Research and Development. 30: 466-471. DOI: 10.1147/Rd.305.0466 |
0.425 |
|
| 1986 |
Feenstra RM, Thompson WA, Fein AP. Scanning tunneling microscopy studies of Si(111)‐2×1 surfaces Journal of Vacuum Science and Technology. 4: 1315-1319. DOI: 10.1116/1.573600 |
0.405 |
|
| 1985 |
Feenstra RM. Summary Abstract: Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3: 1136. DOI: 10.1116/1.583068 |
0.41 |
|
| 1985 |
Feenstra RM, Oehrlein GS. Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy Applied Physics Letters. 47: 97-99. DOI: 10.1063/1.96431 |
0.396 |
|
| 1983 |
Feenstra RM, Hauenstein RJ, McGill TC. Vibrational modes of oxygen in GaP including second-nearest-neighbor interactions Physical Review B. 28: 1858-1869. DOI: 10.1103/Physrevb.28.5793 |
0.44 |
|
| 1983 |
Feenstra RM, McGill TC. Dissociation of (Zn,O) pairs in GaP Physica B-Condensed Matter. 149-151. DOI: 10.1016/0378-4363(83)90466-7 |
0.473 |
|
| 1983 |
Schlesinger TE, Hauenstein RJ, Feenstra RM, McGill TC. Isotope shifts for the P, Q, R lines in indium-doped silicon Solid State Communications. 46: 321-324. DOI: 10.1016/0038-1098(83)90661-0 |
0.589 |
|
| 1982 |
Feenstra RM, McGill TC. Periodicity in the undulation spectra of GaP: N Physical Review B. 26: 430-431. DOI: 10.1103/Physrevb.26.430 |
0.455 |
|
| 1982 |
Feenstra RM, McGill TC. Reaction kinetics in GaP:(Zn,O) Physical Review B. 25: 6329-6337. DOI: 10.1103/Physrevb.25.6329 |
0.43 |
|
| 1981 |
Feenstra RM, McGill TC. Defect Reactions in GaP: (Zn,O) Physical Review Letters. 47: 925-927. DOI: 10.1103/Physrevlett.47.925 |
0.449 |
|
| 1980 |
Feenstra R, McGill T. Exciton capture cross sections of indium and boron impurities in silicon Solid State Communications. 36: 1039-1045. DOI: 10.1016/0038-1098(80)90033-2 |
0.475 |
|
| 1979 |
Feenstra RM, Parsons RR, Shepherd FR, Westwood WD, Ingrey SJ. Modification of CdSe resistivity by laser annealing Journal of Applied Physics. 50: 5624-5629. DOI: 10.1063/1.326736 |
0.313 |
|
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