Year |
Citation |
Score |
2004 |
Ballestad A, Tiedje T, Schmid JH. Comment on "Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth". Physical Review Letters. 93: 159601; author reply. PMID 15524951 DOI: 10.1103/PhysRevLett.93.159601 |
0.61 |
|
2004 |
Ballestad A, Tiedje T, Schmid JH, Kan HC, Tadyyon-Eslami T, Phaneuf RJ. Comment on "transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth" Physical Review Letters. 93: 159601-1-159602-1. DOI: 10.1103/PhysRevLett.93.159601 |
0.61 |
|
2004 |
Schmid JH, Tiedje T, Mar R, Ballestad A. Surface pattern transfer in GaAs with molecular beams of Cl2 Physical Review B - Condensed Matter and Materials Physics. 70: 045315-1-045315-7. DOI: 10.1103/Physrevb.70.045315 |
0.588 |
|
2004 |
Ballestad A, Tiedje T, Schmid J, Ruck B, Adamcyk M. Predicting GaAs surface shapes during MBE regrowth on patterned substrates Journal of Crystal Growth. 271: 13-21. DOI: 10.1016/J.Jcrysgro.2004.07.047 |
0.693 |
|
2003 |
Schmid JH, Mar R, Tiedje T. Surface pattern evolution during thermal Cl2 etching of GaAs(001) Applied Physics Letters. 82: 4549-4551. DOI: 10.1063/1.1584091 |
0.629 |
|
2003 |
Tixier S, Adamcyk M, Young E, Schmid J, Tiedje T. Surfactant enhanced growth of GaNAs and InGaNAs using bismuth Journal of Crystal Growth. 251: 449-454. DOI: 10.1016/S0022-0248(02)02217-0 |
0.682 |
|
2002 |
Ballestad A, Ruck BJ, Schmid JH, Adamcyk M, Nodwell E, Nicoll C, Tiedje T. Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations Physical Review B. 65. DOI: 10.1103/Physrevb.65.205302 |
0.628 |
|
2002 |
Schmid JH, Ballestad A, Ruck BJ, Adamcyk M, Tiedje T. Kinetic roughening of GaAs(001) during thermalCl2etching Physical Review B. 65. DOI: 10.1103/Physrevb.65.155315 |
0.681 |
|
2002 |
Adamcyk M, Schmid JH, Tiedje T, Koveshnikov A, Chahboun A, Fink V, Kavanagh KL. Comparison of strain relaxation in InGaAsN and InGaAs thin films Applied Physics Letters. 80: 4357-4359. DOI: 10.1063/1.1485124 |
0.649 |
|
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