| Year |
Citation |
Score |
| 2019 |
Klahold WM, Choyke WJ, Devaty RP. Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC Materials Science Forum. 963: 341-345. DOI: 10.4028/Www.Scientific.Net/Msf.963.341 |
0.362 |
|
| 2018 |
Klahold WM, Choyke WJ, Devaty RP. High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC Materials Science Forum. 924: 239-244. DOI: 10.4028/Www.Scientific.Net/Msf.924.239 |
0.366 |
|
| 2017 |
Klahold W, Tabachnick C, Freedman G, Devaty RP, Choyke WJ. New Evidence for the Second Conduction Band in 4H SiC Materials Science Forum. 897: 250-253. DOI: 10.4028/Www.Scientific.Net/Msf.897.250 |
0.338 |
|
| 2014 |
Klahold WM, Devaty RP, Choyke WJ, Kawahara K, Kimoto T, Ohshima T. Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100°c and 1500°c and measurements of lifetime and photoluminescence Materials Science Forum. 778: 273-276. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.273 |
0.382 |
|
| 2013 |
Choyke WJ, Devaty RP. Fundamental Aspects of SiC Materials Science and Technology. 661-713. DOI: 10.1002/9783527603978.Mst0252 |
0.335 |
|
| 2012 |
Devaty RP, Yan F, Choyke WJ, Gali A, Kimoto T, Ohshima T. Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC Materials Science Forum. 717: 263-266. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.263 |
0.344 |
|
| 2012 |
Ivanov IG, Gällström A, Coble R, Devaty RP, Choyke WJ, Janzén E. Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy Materials Science Forum. 259-262. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.259 |
0.384 |
|
| 2012 |
Yan F, Devaty RP, Choyke WJ, Gali A, Kimoto T, Ohshima T, Pensl G. Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.3699269 |
0.383 |
|
| 2011 |
Yan F, Espenlaub A, Devaty RP, Ohshima T, Choyke WJ. Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C Materials Science Forum. 237-240. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.237 |
0.333 |
|
| 2010 |
Choyke WJ, D'Urso B, Yan F, Devaty RP. Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC Materials Science Forum. 853-856. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.853 |
0.311 |
|
| 2010 |
Beljakowa S, Reshanov SA, Zippelius B, Krieger M, Pensl G, Danno K, Kimoto T, Onoda S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers Materials Science Forum. 427-430. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.427 |
0.395 |
|
| 2010 |
Reshanov SA, Beljakowa S, Zippelius B, Pensl G, Danno K, Alfieri G, Kimoto T, Onoda S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons Materials Science Forum. 423-426. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.423 |
0.363 |
|
| 2010 |
Yan F, Devaty RP, Choyke WJ, Danno K, Alfieri G, Kimoto T, Onoda S, Ohshima T, Reshanov SA, Beljakowa S, Zippelius B, Pensl G. Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons Materials Science Forum. 419-422. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.419 |
0.397 |
|
| 2010 |
Yan F, Devaty RP, Choyke WJ, Kimoto T, Ohshima T, Pensl G, Gali A. New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC Materials Science Forum. 411-414. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.411 |
0.334 |
|
| 2009 |
Ke Y, Yan F, Devaty RP, Choyke WJ. Electrochemical Polishing of p-Type 4H SiC Materials Science Forum. 601-604. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.601 |
0.376 |
|
| 2009 |
Leach JH, Morkoç H, Ke Y, Devaty RP, Choyke WJ. Novel use of columnar porous silicon carbide structures as nanoimprint lithography stamps Materials Science Forum. 600: 871-874. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.871 |
0.378 |
|
| 2009 |
Zhou L, Ni X, Özgür Ü, Morkoç H, Devaty R, Choyke W, Smith DJ. Atomic structure of the m-plane AlN/SiC interface Journal of Crystal Growth. 311: 1456-1459. DOI: 10.1016/J.Jcrysgro.2008.12.047 |
0.354 |
|
| 2008 |
Reshanov SA, Pensl G, Danno K, Kimoto T, Hishiki S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Materials Science Forum. 417-420. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.417 |
0.358 |
|
| 2008 |
Virojanadara C, Hetzel M, Johansson LI, Choyke WJ, Starke U. Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces Materials Science Forum. 291-296. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.291 |
0.374 |
|
| 2008 |
Ni X, Özgür Ü, Chevtchenko S, Nie J, Morkoç H, Devaty RP, Choyke WJ. Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition Materials Science Forum. 1273-1276. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1273 |
0.371 |
|
| 2008 |
Nie S, Feenstra RM, Ke Y, Devaty RP, Choyke WJ. Electronic states of chemically treated SiC surfaces Journal of Applied Physics. 103: 13709. DOI: 10.1063/1.2829804 |
0.309 |
|
| 2008 |
Virojanadara C, Hetzel M, Riedl C, Johansson L, Choyke W, Starke U. Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC: The (2×1) reconstruction Surface Science. 602: 3506-3509. DOI: 10.1016/J.Susc.2008.09.026 |
0.41 |
|
| 2008 |
Nie S, Lee CD, Feenstra RM, Ke Y, Devaty RP, Choyke WJ, Inoki CK, Kuan TS, Gu G. Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces Surface Science. 602: 2936-2942. DOI: 10.1016/J.Susc.2008.07.021 |
0.31 |
|
| 2007 |
Young CK, Andrews GT, Clouter MJ, Ke Y, Choyke WJ, Devaty RP. Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films Materials Science Forum. 745-748. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.745 |
0.305 |
|
| 2007 |
Ke Y, Devaty RP, Choyke WJ. Nano-columnar pore formation in the photo-electrochemical etching of n-type 6H SiC Materials Science Forum. 741-744. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.741 |
0.379 |
|
| 2007 |
Hetzel M, Virojanadara C, Choyke WJ, Starke U. Nanowire Reconstruction on the 4H-SiC(1102) Surface Materials Science Forum. 529-532. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.529 |
0.372 |
|
| 2007 |
Clouter MJ, Ke Y, Devaty RP, Choyke WJ, Shishkin Y, Saddow SE. Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates Materials Science Forum. 415-418. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.415 |
0.39 |
|
| 2007 |
Gali A, Hornos T, Son NT, Janzén E, Choyke WJ. Ab initiosupercell calculations on aluminum-related defects in SiC Physical Review B. 75. DOI: 10.1103/Physrevb.75.045211 |
0.341 |
|
| 2007 |
Reshanov SA, Pensl G, Danno K, Kimoto T, Hishiki S, Ohshima T, Itoh H, Yan F, Devaty RP, Choyke WJ. Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy Journal of Applied Physics. 102: 113702. DOI: 10.1063/1.2818050 |
0.358 |
|
| 2006 |
Andrews GT, Young CK, Polomska A, Clouter MJ, Ke Y, Devaty RP, Choyke WJ. Brillouin Spectra of Porous p-Type 6H-SiC Materials Science Forum. 747-750. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.747 |
0.363 |
|
| 2006 |
Ke Y, Moisson C, Gaan S, Feenstra RM, Devaty RP, Choyke WJ. A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC Materials Science Forum. 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.743 |
0.359 |
|
| 2006 |
Ke Y, Yan F, Devaty RP, Choyke WJ. Columnar Pore Growth in n-Type 6H SiC Materials Science Forum. 739-742. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.739 |
0.345 |
|
| 2006 |
Strauch D, Dorner B, Ivanov AA, Krisch M, Serrano J, Bosak A, Choyke WJ, Stojetz B, Malorny M. Phonons in SiC from INS, IXS, and Ab-Initio Calculations Materials Science Forum. 689-694. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.689 |
0.317 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) Materials Science Forum. 677-680. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.677 |
0.392 |
|
| 2006 |
Hornos T, Gali A, Devaty RP, Choyke WJ. A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers Materials Science Forum. 605-608. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.605 |
0.346 |
|
| 2006 |
Yan F, Devaty RP, Choyke WJ, Gali A, Bhat IB, Larkin DJ. Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC Materials Science Forum. 527: 585-588. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.585 |
0.41 |
|
| 2006 |
Deák P, Buruzs A, Gali A, Frauenheim T, Choyke WJ. Silicon Carbide: A Playground for 1D-Modulation Electronics Materials Science Forum. 355-358. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.355 |
0.381 |
|
| 2006 |
Shishkin Y, Ke Y, Yan F, Devaty RP, Choyke WJ, Saddow SE. CVD epitaxial growth of 4H-SiC on porous SiC substrates Materials Science Forum. 255-258. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.255 |
0.359 |
|
| 2006 |
Thill C, Knaup J, Deák P, Frauenheim T, Choyke WJ. Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution? Materials Science Forum. 1019-1022. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1019 |
0.359 |
|
| 2006 |
Cantin JL, Von Bardeleben HJ, Ke Y, Devaty RP, Choyke WJ. Hydrogen passivation of carbon P b like centers at the 3C- and 4H-SiCSiO 2 interfaces in oxidized porous SiC Applied Physics Letters. 88. DOI: 10.1063/1.2179128 |
0.375 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC pore surfaces: Surface studies of 4H-SiC(1 1̄-02) and 4H-SiC(1̄ 102̄) Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166484 |
0.411 |
|
| 2006 |
Pensl G, Ciobanu F, Frank T, Kirmse D, Krieger M, Reshanov S, Schmid F, Weidner M, Ohshima T, Itoh H, Choyke WJ. Defect-engineering in SiC by ion implantation and electron irradiation Microelectronic Engineering. 83: 146-149. DOI: 10.1016/J.Mee.2005.10.040 |
0.4 |
|
| 2005 |
Anderson T, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I, Choyke WJ, Devaty RP, Yan F. Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport Materials Science Forum. 9-12. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.9 |
0.371 |
|
| 2005 |
Knaup JM, Deák P, Gali A, Hajnal Z, Frauenheim T, Choyke WJ. The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects Materials Science Forum. 569-572. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.569 |
0.351 |
|
| 2005 |
Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G. Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Materials Science Forum. 493-496. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.493 |
0.383 |
|
| 2005 |
Bardeleben HJv, Cantin JL, Vickridge I, Song YW, Dhar S, Feldman LC, Williams JR, Ke L, Shishkin Y, Devaty RP, Choyke WJ. Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC Materials Science Forum. 483: 277-280. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.277 |
0.334 |
|
| 2005 |
Von Bardeleben HJ, Cantin JL, Ke L, Shishkin Y, Devaty RP, Choyke WJ. Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals Materials Science Forum. 483: 273-276. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.273 |
0.349 |
|
| 2005 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. A Short Synopsis of the Current Status of Porous SiC and GaN Materials Science Forum. 251-256. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.251 |
0.369 |
|
| 2005 |
Knaup JM, Deák P, Frauenheim T, Gali A, Hajnal Z, Choyke WJ. Defects in SiO2 as the possible origin of near interface traps in the SiC SiO2 system: A systematic theoretical study Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.115323 |
0.371 |
|
| 2005 |
Knaup JM, Deák P, Frauenheim T, Gali A, Hajnal Z, Choyke WJ. Theoretical study of the mechanism of dry oxidation of 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235321 |
0.365 |
|
| 2005 |
Hornos T, Gali A, Devaty RP, Choyke WJ. Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study Applied Physics Letters. 87: 212114. DOI: 10.1063/1.2135493 |
0.342 |
|
| 2005 |
Gali A, Hornos T, Deák P, Son NT, Janzén E, Choyke WJ. Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study Applied Physics Letters. 86: 102108. DOI: 10.1063/1.1883745 |
0.336 |
|
| 2005 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Fabrication and morphology of porous p-type SiC Journal of Applied Physics. 97: 44908. DOI: 10.1063/1.1849432 |
0.391 |
|
| 2004 |
Cantin JL, von Bardeleben HJ, Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Identification of the carbon dangling bond center at the 4H-SiC/SiO(2) interface by an EPR study in oxidized porous SiC. Physical Review Letters. 92: 015502. PMID 14753997 DOI: 10.1103/Physrevlett.92.015502 |
0.369 |
|
| 2004 |
Bai S, Yan F, Devaty RP, Choyke WJ, Grötzschel R, Wagner G, MacMillan MF. Photoluminescence Study of C-H and C-D Centers in 4H SiC Materials Science Forum. 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.589 |
0.347 |
|
| 2004 |
Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF. Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells Materials Science Forum. 573-576. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.573 |
0.355 |
|
| 2004 |
Gali A, Deák P, Rauls E, Ordejón P, Carlsson FHC, Ivanov IG, Son NT, Janzén E, Choyke WJ. Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC Materials Science Forum. 443-448. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.443 |
0.335 |
|
| 2004 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Porous Structure of Anodized p-Type 6H SiC Materials Science Forum. 1471-1474. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1471 |
0.329 |
|
| 2004 |
Shishkin Y, Choyke WJ, Devaty RP. Triangular Pore Formation in Highly Doped n-Type 4H SiC Materials Science Forum. 1467-1470. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1467 |
0.356 |
|
| 2004 |
Bardeleben HJv, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC Materials Science Forum. 1457-1462. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1457 |
0.379 |
|
| 2004 |
Yoganathan M, Gupta A, Semenas E, Emorhokpor E, Martin C, Kerr T, Zwieback I, Souzis AE, Anderson T, Tanner C, Chen J, Barrett D, Hopkins R, Johnson C, Yan F, ... Choyke W, et al. Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.9 |
0.427 |
|
| 2004 |
Shishkin Y, Choyke WJ, Devaty RP. Photoelectrochemical etching of n-type 4H silicon carbide Journal of Applied Physics. 96: 2311-2322. DOI: 10.1063/1.1768612 |
0.398 |
|
| 2003 |
Deák P, Gali A, Hajnal Z, Frauenheim T, Son NT, Janzén E, Choyke WJ, Ordejón P. A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC Materials Science Forum. 433: 535-538. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.535 |
0.334 |
|
| 2003 |
Deák P, Aradi B, Gali A, Gerstmann U, Choyke WJ. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi Materials Science Forum. 523-526. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.523 |
0.353 |
|
| 2003 |
Reshanov SA, Klettke O, Pensl G, Choyke WJ. Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers Materials Science Forum. 459-462. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.459 |
0.344 |
|
| 2003 |
Gali A, Deák P, Rauls E, Son NT, Ivanov IG, Carlsson FHC, Janzén E, Choyke WJ. Correlation between the antisite pair and theDIcenter in SiC Physical Review B. 67. DOI: 10.1103/Physrevb.67.155203 |
0.316 |
|
| 2003 |
Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF. Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix Applied Physics Letters. 83: 3171-3173. DOI: 10.1063/1.1618020 |
0.359 |
|
| 2003 |
Gali A, Deák P, Rauls E, Son NT, Ivanov IG, Carlsson FHC, Janzén E, Choyke WJ. Anti-site pair in SiC: a model of the DI center Physica B-Condensed Matter. 340: 175-179. DOI: 10.1016/J.Physb.2003.09.043 |
0.306 |
|
| 2002 |
Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood HM, Neudeck PG, Porter LM. Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Materials Science Forum. 705-708. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.705 |
0.344 |
|
| 2002 |
Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T. Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Materials Science Forum. 389: 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.589 |
0.365 |
|
| 2002 |
Lee CD, Feenstra RM, Shigiltchoff O, Devaty RP, Choyke WJ. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) Mrs Internet Journal of Nitride Semiconductor Research. 7. DOI: 10.1557/S1092578300000284 |
0.348 |
|
| 2002 |
Bai S, Ke Y, Shishkin Y, Shigiltchoff O, Devaty RP, Choyke WJ, Strauch D, Stojetz B, Dorner B, Hobgood D, Serrano J, Cardona M, Nagasawa H, Kimoto T, Porter LM. Four Current Examples of Characterization of Silicon Carbide Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K3.1 |
0.414 |
|
| 2002 |
Gali A, Heringer D, Deák P, Hajnal Z, Frauenheim T, Devaty RP, Choyke WJ. Isolated oxygen defects in3C- and4H-SiC: A theoretical study Physical Review B. 66. DOI: 10.1103/Physrevb.66.125208 |
0.324 |
|
| 2002 |
Serrano J, Strempfer J, Cardona M, Schwoerer-Böhning M, Requardt H, Lorenzen M, Stojetz B, Pavone P, Choyke WJ. Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering Applied Physics Letters. 80: 4360-4362. DOI: 10.1063/1.1484241 |
0.313 |
|
| 2002 |
Gali A, Aradi B, Heringer D, Choyke WJ, Devaty RP, Bai S. Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect Applied Physics Letters. 80: 237-239. DOI: 10.1063/1.1432757 |
0.385 |
|
| 2001 |
Saddow SE, Mynbaeva M, Choyke WJ, Devaty RP, Bai S, Melnychuck G, Koshka Y, Dmitriev V, Wood CEC. SiC defect density reduction by epitaxy on porous surfaces Materials Science Forum. 353: 115-118. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.115 |
0.395 |
|
| 2001 |
Lee CD, Feenstra RM, Shigiltchoff O, Devatya RP, Choyke WJ. Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001) Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I3.40.1 |
0.332 |
|
| 2001 |
Aradi B, Gali A, Deák P, Lowther JE, Son NT, Janzén E, Choyke WJ. Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC Physical Review B. 63. DOI: 10.1103/Physrevb.63.245202 |
0.361 |
|
| 2001 |
Aradi B, Deák P, Son NT, Janzén E, Choyke WJ, Devaty RP. Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide Applied Physics Letters. 79: 2746-2748. DOI: 10.1063/1.1410337 |
0.302 |
|
| 2001 |
Klettke O, Reshanov SA, Pensl G, Shishkin Y, Devaty RP, Choyke WJ. Electrical and optical properties of erbium-related centers in 6H silicon carbide Physica B-Condensed Matter. 308: 687-690. DOI: 10.1016/S0921-4526(01)00869-9 |
0.398 |
|
| 2001 |
Mezhenny S, Lyubinetsky I, Choyke WJ, Wolkow RA, Yates JT. Multiple bonding structures of C2H2 chemisorbed on Si(1 0 0) Chemical Physics Letters. 344: 7-12. DOI: 10.1016/S0009-2614(01)00535-8 |
0.354 |
|
| 2001 |
Lee CD, Ramachandran V, Sagar A, Feenstra RM, Greve DW, Sarney WL, Salamanca-Riba L, Look DC, Bai S, Choyke WJ, Devaty RP. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy Journal of Electronic Materials. 30: 162-169. DOI: 10.1007/S11664-001-0010-6 |
0.399 |
|
| 2001 |
Shishkin Y, Devaty R, Choyke W, Yun F, King T, Morko� H. Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions Physica Status Solidi (a). 188: 591-594. DOI: 10.1002/1521-396X(200112)188:2<591::Aid-Pssa591>3.0.Co;2-7 |
0.337 |
|
| 2000 |
Deák P, Gali A, Aradi B, Son NT, Janzén E, Choyke WJ. Vacancies and their complexes with H in SiC Materials Science Forum. 817-820. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.817 |
0.38 |
|
| 2000 |
Frank T, Pensl G, Bai S, Devaty RP, Choyke WJ. Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Materials Science Forum. 753-756. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.753 |
0.346 |
|
| 2000 |
Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB, Niemann E, Wischmeyer F. Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation Materials Science Forum. 733-736. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.733 |
0.31 |
|
| 2000 |
Shishkin Y, Devaty RP, Choyke WJ. Optical Lifetime Measurements in 4H SiC Materials Science Forum. 679-682. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.679 |
0.333 |
|
| 2000 |
Shishkin Y, Choyke WJ, Devaty RP, Achtziger N, Opfermann T, Witthuhn W. Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC Materials Science Forum. 639-642. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.639 |
0.373 |
|
| 2000 |
Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ. Differential Absorption Measurement of Valence Band Splittings in 4H SiC Materials Science Forum. 567-570. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.567 |
0.354 |
|
| 2000 |
Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ. Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC Materials Science Forum. 551-554. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.551 |
0.358 |
|
| 2000 |
Gali A, Deak P, Briddon P, Devaty R, Choyke W. Phosphorus-related deep donor in SiC Physical Review B. 61: 12602-12604. DOI: 10.1103/Physrevb.61.12602 |
0.323 |
|
| 1999 |
Dalibor T, Trageser H, Pensl G, Kimoto T, Matsunami H, Nizhner D, Shigiltchoff O, Choyke WJ. Oxygen in silicon carbide : shallow donors and deep acceptors Materials Science and Engineering B-Advanced Functional Solid-State Materials. 454-459. DOI: 10.1016/S0921-5107(98)00554-6 |
0.374 |
|
| 1999 |
Sridhara SG, Eperjesi TJ, Devaty RP, Choyke WJ. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths Materials Science and Engineering B-Advanced Functional Solid-State Materials. 229-233. DOI: 10.1016/S0921-5107(98)00508-X |
0.383 |
|
| 1999 |
Devaty RP, Choyke WJ, Sridhara SG, Clemen LL. Neutral aluminum and gallium four particle complexes in silicon carbide polytypes Materials Science and Engineering B-Advanced Functional Solid-State Materials. 61: 187-196. DOI: 10.1016/S0921-5107(98)00500-5 |
0.373 |
|
| 1998 |
Im HJ, Kaczer B, Pelz JP, Chen JM, Choyke WJ. Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy Materials Science Forum. 813-816. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.813 |
0.369 |
|
| 1998 |
Dalibor T, Pensl G, Yamamoto T, Kimoto T, Matsunami H, Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ. Oxygen-Related Defect Centers in 4H Silicon Carbide Materials Science Forum. 553-556. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.553 |
0.381 |
|
| 1998 |
Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ, Dalibor T, Pensl G, Kimoto T. DII Revisited in an Modern Guise - 6H and 4H SiC Materials Science Forum. 493-496. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.493 |
0.359 |
|
| 1998 |
Sridhara SG, Clemen LL, Nizhner DG, Choyke WJ, Devaty RP, Larkin DJ. Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC Materials Science Forum. 465-468. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.465 |
0.309 |
|
| 1998 |
Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ, Troffer T, Pensl G, Larkin DJ, Kong HS. Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC Materials Science Forum. 461-464. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.461 |
0.316 |
|
| 1998 |
Lyubinetsky I, Dohnalek Z, Choyke WJ, Yates JT. Cl 2 dissociation on Si(100)-(2×1): A statistical study by scanning tunneling microscopy Physical Review B. 58: 7950-7957. DOI: 10.1103/Physrevb.58.7950 |
0.344 |
|
| 1998 |
Sridhara SG, Devaty RP, Choyke WJ. Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å Journal of Applied Physics. 84: 2963-2964. DOI: 10.1063/1.368403 |
0.388 |
|
| 1998 |
Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB. Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T Journal of Applied Physics. 84: 2062-2064. DOI: 10.1063/1.368266 |
0.344 |
|
| 1998 |
Sridhara SG, Clemen LL, Devaty RP, Choyke WJ, Larkin DJ, Kong HS, Troffer T, Pensl G. Photoluminescence and transport studies of boron in 4H SiC Journal of Applied Physics. 83: 7909-7919. DOI: 10.1063/1.367970 |
0.442 |
|
| 1998 |
Im H, Kaczer B, Pelz JP, Choyke WJ. Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC Applied Physics Letters. 72: 839-841. DOI: 10.1063/1.120910 |
0.393 |
|
| 1997 |
Nishino H, Yang W, Dohnálek Z, Ukraintsev VA, Choyke WJ, Yates JT. Silicon crystal heating and thermocouple mounting designs Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 182-186. DOI: 10.1116/1.580461 |
0.303 |
|
| 1997 |
Xu J, Choyke WJ, Yates JT. Enhanced silicon oxide film growth on Si (100) using electron impact Journal of Applied Physics. 82: 6289-6292. DOI: 10.1063/1.366516 |
0.342 |
|
| 1997 |
Dalibor T, Pensl G, Kimoto T, Matsunami H, Sridhara S, Devaty RP, Choyke WJ. Radiation-induced defect centers in 4H silicon carbide Diamond and Related Materials. 6: 1333-1337. DOI: 10.1016/S0925-9635(97)00108-8 |
0.429 |
|
| 1997 |
Choyke WJ, Devaty RP. Progress in the study of optical and related properties of SiC since 1992 Diamond and Related Materials. 6: 1243-1248. DOI: 10.1016/S0925-9635(97)00063-0 |
0.392 |
|
| 1997 |
Xu J, Choyke WJ, Yates JT. Amorphous SiC film formation on Si(100) using electron beam excitation Applied Surface Science. 120: 279-286. DOI: 10.1016/S0169-4332(97)00232-8 |
0.434 |
|
| 1997 |
Dohna´lek Z, Yang W, Ukraintsev V, Choyke W, Yates J. Nickel-induced defects and their role in governing chlorine chemistry on the Si(100) surface Surface Science. 392: 17-26. DOI: 10.1016/S0039-6028(97)00098-8 |
0.372 |
|
| 1997 |
Yang W, Dohna´lek Z, Choyke W, Yates J. Influence of surface defects on chlorine chemisorption on Si(100)-(2 × 1) Surface Science. 392: 8-16. DOI: 10.1016/S0039-6028(97)00097-6 |
0.385 |
|
| 1997 |
Devaty RP, Choyke WJ. Optical Characterization of Silicon Carbide Polytypes Physica Status Solidi (a). 162: 5-38. DOI: 10.1002/1521-396X(199707)162:1<5::Aid-Pssa5>3.0.Co;2-J |
0.366 |
|
| 1997 |
Dalibor T, Pensl G, Matsunami H, Kimoto T, Choyke WJ, Schöner A, Nordell N. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy Physica Status Solidi (a). 162: 199-225. DOI: 10.1002/1521-396X(199707)162:1<199::Aid-Pssa199>3.0.Co;2-0 |
0.403 |
|
| 1996 |
Yoganathan M, Choyke WJ, Devaty RP, Pensl G, Edmond JA. 1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC Mrs Proceedings. 422: 339. DOI: 10.1557/Proc-422-339 |
0.359 |
|
| 1996 |
MacMillan MF, Clemen LL, Devaty RP, Choyke WJ, Khan MA, Kuznia JN, Krishnankutty S. Cathodoluminescence of AlN–GaN short period superlattices Journal of Applied Physics. 80: 2378-2382. DOI: 10.1063/1.363726 |
0.327 |
|
| 1996 |
MacMillan MF, Devaty RP, Choyke WJ, Khan MA, Kuznia J. Infrared reflectance of AlN–GaN short period superlattice films Journal of Applied Physics. 80: 2372-2377. DOI: 10.1063/1.363072 |
0.313 |
|
| 1996 |
MacMillan MF, Devaty RP, Choyke WJ, Goldstein DR, Spanier JE, Kurtz AD. Infrared reflectance of thick p-type porous SiC layers Journal of Applied Physics. 80: 2412-2419. DOI: 10.1063/1.363046 |
0.401 |
|
| 1996 |
Yoganathan M, Choyke WJ, Devaty RP, Neudeck PG. Free to bound transition-related electroluminescence in 3C and 6H SiC p + -n junctions at room temperature Journal of Applied Physics. 80: 1763-1767. DOI: 10.1063/1.362974 |
0.368 |
|
| 1996 |
Steckl AJ, Devrajan J, Choyke WJ, Devaty RP, Yoganathan M, Novak SW. Effect of annealing temperature on 1.5 mm photoluminescence from Er-implanted 6H-SiC Journal of Electronic Materials. 25: 869-873. DOI: 10.1007/Bf02666651 |
0.364 |
|
| 1996 |
Feng ZC, Gong H, Choyke WJ, Doyle NJ, Farrow RFC. A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 7: 23-26. DOI: 10.1007/Bf00194088 |
0.311 |
|
| 1995 |
Wee ATS, Feng ZC, Hng HH, Tan KL, Farrow RFC, Choyke WJ. XPS and SIMS studies of MBE-grown CdTe/InSb(001) heterostructures Journal of Physics: Condensed Matter. 7: 4359-4369. DOI: 10.1088/0953-8984/7/23/007 |
0.352 |
|
| 1995 |
Dohnálek Z, Gao Q, Choyke WJ, Yates JT. Step site bonding on a vicinal Si(100) surface upon Cl2 adsorption The Journal of Chemical Physics. 102: 2946-2950. DOI: 10.1063/1.468602 |
0.359 |
|
| 1995 |
Kimoto T, Itoh A, Matsunami H, Sridhara S, Clemen LL, Devaty RP, Choyke WJ, Dalibor T, Peppermüller C, Pensl G. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition Applied Physics Letters. 67: 2833-2835. DOI: 10.1063/1.114800 |
0.381 |
|
| 1995 |
Larkin DJ, Sridhara SG, Devaty RP, Choyke WJ. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy Journal of Electronic Materials. 24: 289-294. DOI: 10.1007/Bf02659689 |
0.385 |
|
| 1994 |
Lucas SR, Partlow WD, Choyke WJ, Yates JT. Ga-CH 3 bond scission by atomic H: The depletion of surface carbon from a gallium alkyl film on silicon dioxide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 3040-3047. DOI: 10.1116/1.578933 |
0.318 |
|
| 1994 |
Yoganathan M, Suttrop W, Devaty RP, Choyke WJ. Identification of {2\overline{1}\overline{1}0} and {10\overline{1}0} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes Journal of Applied Crystallography. 27: 497-503. DOI: 10.1107/S0021889893012439 |
0.353 |
|
| 1994 |
Choyke WJ, Devaty RP, Clemen LL, Yoganathan M, Pensl G, Hässler C. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC Applied Physics Letters. 65: 1668-1670. DOI: 10.1063/1.112908 |
0.406 |
|
| 1994 |
Schadt M, Pensl G, Devaty RP, Choyke WJ, Stein R, Stephani D. Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide Applied Physics Letters. 65: 3120-3122. DOI: 10.1063/1.112455 |
0.383 |
|
| 1994 |
Yates JT, Hübner A, Lucas SR, Partlow WD, Schaefer J, Choyke WJ. Activation of the Ga-CH3 bond using atomic hydrogen - a possible route to III-V semiconductors films with low carbon levels Applied Surface Science. 82: 180-192. DOI: 10.1016/0169-4332(94)90215-1 |
0.331 |
|
| 1994 |
Gao Q, Dohnalek Z, Cheng C, Choyke W, Yates J. The adsorption and surface reaction of SiCl4 on Si(100)-(2 × 1) Surface Science. 302: 1-9. DOI: 10.1016/0039-6028(94)91091-X |
0.373 |
|
| 1994 |
Gao Q, Dohnalek Z, Cheng C, Choyke W, Yates J. Direct images of isotropic and anisotropic vibrations in the Cl-Si and H-O-Si chemisorption bonds on Si(100) Surface Science. 312: 261-270. DOI: 10.1016/0039-6028(94)90720-X |
0.383 |
|
| 1994 |
Dohnálek Z, Gao Q, Choyke W, Yates J. Chemical reactions of chlorine on a vicinal Si(100) surface studied by ESDIAD Surface Science. 320: 238-246. DOI: 10.1016/0039-6028(94)90311-5 |
0.335 |
|
| 1994 |
Hobgood HM, Barrett DL, McHugh JP, Clarke RC, Sriram S, Burk AA, Greggi J, Brandt CD, Hopkins RH, Choyke WJ. Large diameter 6H-SiC for microwave device applications Journal of Crystal Growth. 137: 181-186. DOI: 10.1016/0022-0248(94)91269-6 |
0.346 |
|
| 1993 |
Götz W, Schöner A, Suttrop W, Pensl G, Choyke WJ, Steiner R, Leibenzeder S. Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC) Materials Science Forum. 69-74. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.69 |
0.387 |
|
| 1993 |
Götz W, Schöner A, Pensl G, Suttrop W, Choyke WJ, Stein RA, Leibenzeder S. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC Materials Science Forum. 495-500. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.495 |
0.378 |
|
| 1993 |
Götz W, Schöner A, Pensl G, Suttrop W, Choyke WJ, Stein R, Leibenzeder S. Nitrogen donors in 4H‐silicon carbide Journal of Applied Physics. 73: 3332-3338. DOI: 10.1063/1.352983 |
0.361 |
|
| 1993 |
Lambrecht WRL, Segall B, Suttrop W, Yoganathan M, Devaty RP, Choyke WJ, Edmond JA, Powell JA, Alouani M. Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment Applied Physics Letters. 63: 2747-2749. DOI: 10.1063/1.110322 |
0.317 |
|
| 1993 |
Clemen LL, Devaty RP, MacMillan MF, Yoganathan M, Choyke WJ, Larkin DJ, Powell JA, Edmond JA, Kong HS. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC Applied Physics Letters. 62: 2953-2955. DOI: 10.1063/1.109627 |
0.387 |
|
| 1993 |
MacMillan MF, Devaty RP, Choyke WJ. Infrared reflectance of thin aluminum nitride films on various substrates Applied Physics Letters. 62: 750-752. DOI: 10.1063/1.108595 |
0.302 |
|
| 1993 |
Pensl G, Choyke WJ. Electrical and optical characterization of SiC Physica B-Condensed Matter. 185: 264-283. DOI: 10.1016/0921-4526(93)90249-6 |
0.377 |
|
| 1993 |
Yates JT, Cheng CC, Gao Q, Choyke WJ. Halogen surface chemistry on Si(100)−(2×1) Surface Science Reports. 19: 79-86. DOI: 10.1016/0167-5729(93)90005-A |
0.344 |
|
| 1993 |
Cheng C, Taylor P, Wallace R, Gutleben H, Clemen L, Colaianni M, Chen P, Weinberg W, Choyke W, Yates J. Hydrocarbon surface chemistry on Si(100) Thin Solid Films. 225: 196-202. DOI: 10.1016/0040-6090(93)90155-I |
0.389 |
|
| 1993 |
Yates JT, Cheng CC, Gao Q, Colaianni ML, Choyke WJ. Atomic H : a reagent for the extraction of chemical species from Si surfaces Thin Solid Films. 225: 150-154. DOI: 10.1016/0040-6090(93)90145-F |
0.379 |
|
| 1993 |
Gao Q, Cheng C, Chen P, Choyke W, Yates J. Comparison of Cl2 and HCl adsorption on Si(100)−(2 × 1) Thin Solid Films. 225: 140-144. DOI: 10.1016/0040-6090(93)90143-D |
0.376 |
|
| 1993 |
Barrett DL, McHugh JP, Hobgood HM, Hopkins RH, McMullin PG, Clarke RC, Choyke WJ. Growth of large SiC single crystals Journal of Crystal Growth. 128: 358-362. DOI: 10.1016/0022-0248(93)90348-Z |
0.335 |
|
| 1992 |
Suttrop W, Pensl G, Choyke WJ, Stein R, Leibenzeder S. Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide Journal of Applied Physics. 72: 3708-3713. DOI: 10.1063/1.352318 |
0.351 |
|
| 1992 |
Asif Khan M, Kuznia JN, Skogman RA, Olson DT, Mac Millan M, Choyke WJ. Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates Applied Physics Letters. 61: 2539-2541. DOI: 10.1063/1.108144 |
0.319 |
|
| 1992 |
Taylor PA, Wallace RM, Cheng CC, Weinberg WH, Dresser MJ, Choyke WJ, Yates JT. Adsorption and decomposition of acetylene on silicon(100)-(2.times.1) Journal of the American Chemical Society. 114: 6754-6760. DOI: 10.1021/Ja00043A020 |
0.336 |
|
| 1992 |
Cheng CC, Lucas SR, Gutleben H, Choyke WJ, Yates JT. Atomic hydrogen-driven halogen extraction from silicon(100): Eley-Rideal surface kinetics Journal of the American Chemical Society. 114: 1249-1252. DOI: 10.1021/Ja00030A020 |
0.329 |
|
| 1992 |
Clemen L, Wallace RM, Taylor PA, Dresser MJ, Choyke WJ, Weinberg WH, Yates JT. Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1) Surface Science. 268: 205-216. DOI: 10.1016/0039-6028(92)90963-7 |
0.319 |
|
| 1992 |
Cheng CC, Lucas SR, Gutleben H, Choyke WJ, Yates JT. Interaction of atomic hydrogen with the surface methyl group on Si(100) - removal of surface carbon Surface Science. 273: L441-L448. DOI: 10.1016/0039-6028(92)90267-A |
0.356 |
|
| 1991 |
Ruan J, Choyke WJ, Partlow WD. Cathodoluminescence and annealing study of plasma-deposited polycrystalline diamond films Journal of Applied Physics. 69: 6632-6636. DOI: 10.1063/1.348877 |
0.342 |
|
| 1991 |
Wallace RM, Taylor PA, Dresser MJ, Choyke WJ, Yates JT. Background effects in electron stimulated desorption ion angular distribution (ESDIAD) measurements on Si(111)-(7×7) Review of Scientific Instruments. 62: 720-724. DOI: 10.1063/1.1142074 |
0.351 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Choyke WJ, Clemen L, Yoganathan M, Yang JW, Pirouz P. Application of oxidation to the structural characterization of SiC epitaxial films Applied Physics Letters. 59: 183-185. DOI: 10.1063/1.105960 |
0.323 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Yang JW, Pirouz P, Choyke WJ, Clemen L, Yoganathan M. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers Applied Physics Letters. 59: 333-335. DOI: 10.1063/1.105587 |
0.408 |
|
| 1991 |
Gutleben H, Lucas SR, Cheng CC, Choyke WJ, Yates JT. Thermal stability of the methyl group adsorbed on Si( 100): CH3I surface chemistry Surface Science. 257: 146-156. DOI: 10.1016/0039-6028(91)90787-S |
0.315 |
|
| 1991 |
Bradshaw J, Choyke W, Devaty R, Messham R. Photoluminescence from carriers confined at an AlxGa1−xAs/GaAs heterojunction interface Journal of Luminescence. 47: 249-254. DOI: 10.1016/0022-2313(91)90017-P |
0.36 |
|
| 1991 |
Barrett DL, Seidensticker RG, Gaida W, Hopkins RH, Choyke WJ. SiC boule growth by sublimation vapor transport Journal of Crystal Growth. 109: 17-23. DOI: 10.1016/0022-0248(91)90152-U |
0.319 |
|
| 1990 |
Wallace RM, Taylor PA, Choyke WJ, Yates JT. PH3surface chemistry on Si(111)‐(7×7): A study by Auger spectroscopy and electron stimulated desorption methods Journal of Applied Physics. 68: 3669-3678. DOI: 10.1063/1.347168 |
0.312 |
|
| 1990 |
Bradshaw JL, Choyke WJ, Devaty RP, Messham RL. Enhanced carrier diffusion lengths and photon transport in AlxGa1−xAs/GaAs structures Journal of Applied Physics. 67: 1483-1491. DOI: 10.1063/1.345656 |
0.313 |
|
| 1990 |
Cheng CC, Wallace RM, Taylor PA, Choyke WJ, Yates JT. Direct determination of absolute monolayer coverages of chemisorbed C2H2and C2H4on Si(100) Journal of Applied Physics. 67: 3693-3699. DOI: 10.1063/1.345326 |
0.335 |
|
| 1990 |
Partlow WD, Ruan J, Witkowski RE, Choyke WJ, Knight DS. Cryogenic cathodoluminescence of plasma‐deposited polycrystalline diamond coatings Journal of Applied Physics. 67: 7019-7025. DOI: 10.1063/1.345048 |
0.341 |
|
| 1990 |
Powell JA, Larkin DJ, Matus LG, Choyke WJ, Bradshaw JL, Henderson L, Yoganathan M, Yang J, Pirouz P. Growth of improved quality 3C-SiC films on 6H-SiC substrates Applied Physics Letters. 56: 1353-1355. DOI: 10.1063/1.102512 |
0.379 |
|
| 1990 |
Powell JA, Larkin DJ, Matus LG, Choyke WJ, Bradshaw JL, Henderson L, Yoganathan M, Yang J, Pirouz P. Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers Applied Physics Letters. 56: 1442-1444. DOI: 10.1063/1.102492 |
0.385 |
|
| 1990 |
Wallace R, Cheng C, Taylor P, Choyke W, Yates J. Ni impurity effec̀ts on hydrogen surface chemistry and etching of Si(111) Applied Surface Science. 45: 201-206. DOI: 10.1016/0169-4332(90)90003-I |
0.377 |
|
| 1990 |
Wallace R, Taylor P, Choyke W, Yates J. An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7 × 7) Surface Science. 239: 1-12. DOI: 10.1016/0039-6028(90)90613-D |
0.414 |
|
| 1990 |
Cheng C, Choyke W, Yates J. Thermal stability of the carbon-carbon bond in Ethylene adsorbed on Si(100): An isotopic mixing study Surface Science. 231: 289-296. DOI: 10.1016/0039-6028(90)90197-G |
0.41 |
|
| 1990 |
Taylor P, Wallace R, Choyke W, Yates J. The adsorption and thermal decomposition of PH3 on Si(111)-(7 × 7) Surface Science. 238: 1-12. DOI: 10.1016/0039-6028(90)90060-L |
0.319 |
|
| 1989 |
Spitznagel JA, Wood S, Choyke WJ, Devaty RP, Ruan J. Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants Mrs Proceedings. 147: 113. DOI: 10.1557/Proc-147-113 |
0.345 |
|
| 1989 |
Feng ZC, Perkowitz S, Sudharsanan R, Erbil A, Pollard KT, Rohatgi A, Bradshaw JL, Choyke WJ. Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition Journal of Applied Physics. 66: 1711-1716. DOI: 10.1063/1.344391 |
0.338 |
|
| 1989 |
Taylor PA, Bozack M, Choyke WJ, Yates JT. X-ray photoelectron spectroscopy study of Si-C film growth by chemical vapor deposition of ethylene on Si(100) Journal of Applied Physics. 65: 1099-1105. DOI: 10.1063/1.343045 |
0.378 |
|
| 1989 |
Choyke WJ, Powell JA, Cheng TT, Pirouz P. Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si Materials Science Forum. 126-126. DOI: 10.1007/978-3-642-75048-9_25 |
0.407 |
|
| 1988 |
Feng ZC, Choyke WJ, Powell JA. Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system Journal of Applied Physics. 64: 6827-6835. DOI: 10.1063/1.341997 |
0.318 |
|
| 1988 |
Feng ZC, Mascarenhas AJ, Choyke WJ, Powell JA. Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si Journal of Applied Physics. 64: 3176-3186. DOI: 10.1063/1.341533 |
0.397 |
|
| 1988 |
Choyke WJ, Feng ZC, Powell JA. Low-temperature photoluminescence studies of chemical-vapor-deposition- grown 3C-SiC on Si Journal of Applied Physics. 64: 3163-3175. DOI: 10.1063/1.341532 |
0.362 |
|
| 1987 |
Choyke WJ. Optical, Vibrational and Surface Properties of SiC Mrs Proceedings. 97. DOI: 10.1557/Proc-97-207 |
0.344 |
|
| 1987 |
Bradshaw JL, Choyke WJ, Feng ZC, Meier DL, Messham RL. Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs Mrs Proceedings. 102. DOI: 10.1557/Proc-102-595 |
0.334 |
|
| 1987 |
Bozack M, Dresser M, Choyke W, Taylor P, Yates J. Si-F bond directions on Si(100) — A study by ESDIAD Surface Science. 184: L332-L338. DOI: 10.1016/S0039-6028(87)80259-5 |
0.317 |
|
| 1987 |
Bozack MJ, Taylor PA, Choyke WJ, Yates JT. Alkyl radical involvement in silicon surface chemistry Surface Science. 179: 132-142. DOI: 10.1016/0039-6028(87)90124-5 |
0.423 |
|
| 1986 |
Burke MG, Choyke WJ, Doyle NJ, Feng ZC, Hanes MH, Mascarenhas A. Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves. Mrs Proceedings. 77. DOI: 10.1557/Proc-77-615 |
0.312 |
|
| 1986 |
Yates JT, Bozack MJ, Muehlhoff L, Choyke WJ. Control of the Surface Reactivity of the Si(100) Surface. Mrs Proceedings. 75. DOI: 10.1557/Proc-75-539 |
0.351 |
|
| 1986 |
Noreika AJ, Farrow RFC, Shirland FA, Takei WJ, Greggi J, Wood S, Choyke WJ. Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers Journal of Vacuum Science and Technology. 4: 2081-2085. DOI: 10.1116/1.574031 |
0.342 |
|
| 1986 |
Bozack MJ, Choyke WJ, Muehlhoff L, Yates JT. Reaction chemistry at the Si (100) surface—control through active‐site manipulation Journal of Applied Physics. 60: 3750-3754. DOI: 10.1063/1.337586 |
0.346 |
|
| 1986 |
Muehlhoff L, Choyke WJ, Bozack MJ, Yates JT. Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001̄) Journal of Applied Physics. 60: 2842-2853. DOI: 10.1063/1.337068 |
0.327 |
|
| 1986 |
Spitznagel JA, Wood S, Choyke WJ, Doyle NJ, Bradshaw J, Fishman SG. Ion beam modification of 6H/15R SiC crystals Nuclear Inst. and Methods in Physics Research, B. 16: 237-243. DOI: 10.1016/0168-583X(86)90019-4 |
0.38 |
|
| 1986 |
Bozack M, Taylor P, Choyke W, Yates J. Chemical activity of the C=C double bond on silicon surfaces Surface Science Letters. 177: L933-L937. DOI: 10.1016/0039-6028(86)90252-9 |
0.365 |
|
| 1986 |
Bozack MJ, Choyke WJ, Muehlhoff L, Yates JT. Defect- and electron-enhanced chemistry at silicon surfaces: Reactivity and thermal desorption of propylene on Si(100)-(2 × 1) Surface Science. 176: 547-566. DOI: 10.1016/0039-6028(86)90054-3 |
0.402 |
|
| 1986 |
Feng ZC, Mascarenhas A, Choyke WJ. Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures Journal of Luminescence. 35: 329-341. DOI: 10.1016/0022-2313(86)90019-0 |
0.352 |
|
| 1985 |
Lee KM, Dang LS, Watkins GD, Choyke WJ. Optically detected magnetic resonance study of SiC:Ti. Physical Review. B, Condensed Matter. 32: 2273-2284. PMID 9937297 DOI: 10.1103/Physrevb.32.2273 |
0.367 |
|
| 1985 |
Wood S, Spitznagel JA, Choyke WJ, Bradshaw J, Greggi J, Doyle NJ. Surface Modification of Sic by Ion Implantation Mrs Proceedings. 60. DOI: 10.1557/Proc-60-459 |
0.364 |
|
| 1985 |
Choyke WJ, Bradshaw JL, Mascarenhas A, Feng ZC, Sinharoy S, Hoffman RA. Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides Mrs Proceedings. 60. DOI: 10.1557/Proc-60-355 |
0.317 |
|
| 1985 |
Feng ZC, Mascarenhas A, Choyke WJ, Farrow RFC, Shirland FA, Takei WJ. A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates Applied Physics Letters. 47: 24-25. DOI: 10.1063/1.96420 |
0.311 |
|
| 1985 |
Bozso F, Yates JT, Choyke WJ, Muehlhoff L. Studies of SiC Formation on Si(100) by Chemical Vapor Deposition Journal of Applied Physics. 57: 2771-2778. DOI: 10.1063/1.335420 |
0.399 |
|
| 1985 |
Spitznagel JA, Choyke WJ, Irwin RB, Doyle NJ. Effects of oxygen level and distribution on near-surface phenomena in hydrogen implanted single crystal FZ, CZ, and web silicon Nuclear Inst. and Methods in Physics Research, B. 7: 287-292. DOI: 10.1016/0168-583X(85)90567-1 |
0.358 |
|
| 1984 |
Choyke WJ, Spitznagel JA, Doyle NJ, Wood S, Irwin RB. Defect Formation and Hydrogen Trapping in H+ Implanted FZ Silicon Mrs Proceedings. 36. DOI: 10.1557/Proc-36-187 |
0.378 |
|
| 1984 |
Bozso F, Muehlhoff L, Choyke WJ, Trenary M, John TY. Electron Spectroscopy Study Of SiCa) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 1271-1274. DOI: 10.1116/1.572394 |
0.359 |
|
| 1983 |
Choyke W, Irwin R, Mcgruer J, Townsend J, Doyle N, Hall B, Spitznagel J, Wood S. A Comparative Study of Near-Surface Effects Due to Very High Fluence H+ Implantation In Single Crystal FZ, CZ, and Web SI Mrs Proceedings. 27. DOI: 10.1557/Proc-27-359 |
0.404 |
|
| 1982 |
Wu SY, Choyke WJ, Takei WJ, Noreika AJ, Francombe MH, Irwin RB. Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe Journal of Vacuum Science and Technology. 21: 255-258. DOI: 10.1116/1.571729 |
0.302 |
|
| 1974 |
Choyke WJ, Patrick L. Photoluminescence of H- and D-implanted 4 H SiC Physical Review B. 9: 3214-3219. DOI: 10.1103/Physrevb.9.3214 |
0.424 |
|
| 1974 |
Patrick L, Choyke WJ. Luminescence centers in H- and D-implanted 6 H SiC Physical Review B. 9: 1997-1997. DOI: 10.1103/Physrevb.9.1997 |
0.38 |
|
| 1974 |
Patrick L, Choyke WJ. Photoluminescence of Ti in four SiC polytypes Physical Review B. 10: 5091-5094. DOI: 10.1103/Physrevb.10.5091 |
0.339 |
|
| 1974 |
Choyke WJ, Patrick L, Dean PJ. Magneto-Optical Measurements on H-Implanted 6H SiC Physical Review B. 10: 556-560. DOI: 10.1007/978-3-322-94774-1_95 |
0.415 |
|
| 1973 |
Patrick L, Choyke WJ. Efficient luminescence centers in H- and D-implanted 6H SiC Physical Review B. 8: 1660-1669. DOI: 10.1103/Physrevb.8.1660 |
0.433 |
|
| 1973 |
Patrick L, Choyke W. Localized vibrational modes of a persistent defect in ion-implanted SiC Journal of Physics and Chemistry of Solids. 34: 565-567. DOI: 10.1016/0022-3697(73)90051-6 |
0.344 |
|
| 1972 |
Patrick L, Choyke WJ. Photoluminescence of Radiation Defects in Ion-Implanted 6 H SiC Physical Review B. 5: 3253-3259. DOI: 10.1103/Physrevb.5.3253 |
0.335 |
|
| 1971 |
Choyke WJ, Patrick L. Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller Effect Physical Review B. 4: 1843-1847. DOI: 10.1103/Physrevb.4.1843 |
0.35 |
|
| 1970 |
Choyke WJ, Patrick L. Luminescence of Donor-Acceptor Pairs in Cubic SiC Physical Review B. 2: 4959-4965. DOI: 10.1103/Physrevb.2.4959 |
0.33 |
|
| 1970 |
Patrick L, Choyke WJ. Static Dielectric Constant of SiC Physical Review B. 2: 2255-2256. DOI: 10.1103/Physrevb.2.2255 |
0.301 |
|
| 1969 |
Choyke WJ, Patrick L. Higher Absorption Edges in Cubic SiC Physical Review. 187: 1041-1043. DOI: 10.1103/Physrev.187.1041 |
0.312 |
|
| 1968 |
Choyke WJ, Patrick L. Refractive Index and Low-Frequency Dielectric Constant of 6H SiC Journal of the Optical Society of America. 58: 377-379. DOI: 10.1364/Josa.58.000377 |
0.342 |
|
| 1968 |
Feldman DW, Parker JH, Choyke WJ, Patrick L. Phonon dispersion curves by raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R Physical Review. 173: 787-793. DOI: 10.1103/Physrev.173.787 |
0.337 |
|
| 1968 |
Choyke WJ, Patrick L. Higher Absorption Edges in 6H SiC Physical Review. 172: 769-772. DOI: 10.1103/Physrev.172.769 |
0.385 |
|
| 1968 |
Feldman DW, Parker JH, Choyke WJ, Patrick L. Raman scattering in 6H SiC Physical Review. 170: 698-704. DOI: 10.1103/Physrev.170.698 |
0.337 |
|
| 1965 |
Patrick L, Choyke WJ, Hamilton DR. Luminescence of 4H SiC, and Location of Conduction-Band Minima in SiC Polytypes Physical Review. 137: 1515. DOI: 10.1103/Physrev.137.A1515 |
0.388 |
|
| 1963 |
Choyke WJ, Hamilton DR, Patrick L. Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption Physical Review. 133: 2023-2031. DOI: 10.1103/Physrev.133.A1163 |
0.32 |
|
| 1962 |
Choyke WJ, Patrick L. EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC Physical Review. 127: 1868-1877. DOI: 10.1103/Physrev.127.1868 |
0.437 |
|
| 1959 |
Patrick L, Choyke WJ. Impurity Bands and Electroluminescence in SiC p‐n Junctions Journal of Applied Physics. 30: 236-248. DOI: 10.1063/1.1735139 |
0.329 |
|
| 1957 |
Choyke WJ, Patrick L. Absorption of Light in Se near the Band Edge Physical Review. 108: 25-28. DOI: 10.1103/Physrev.108.25 |
0.315 |
|
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