| Year |
Citation |
Score |
| 2008 |
Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644 |
0.615 |
|
| 2007 |
Polyakov AY, Smirnov NB, Gila BP, Hlad M, Gerger AP, Abernathy CR, Pearton SJ. Studies of Interface States in Sc[sub 2]O[sub 3]∕GaN, MgO∕GaN, and MgScO∕GaN structures Journal of the Electrochemical Society. 154: H115. DOI: 10.1149/1.2405865 |
0.686 |
|
| 2007 |
Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y |
0.619 |
|
| 2007 |
Kang B, Wang H, Ren F, Hlad M, Gila B, Abernathy C, Pearton S, Li C, Low Z, Lin J, Johnson J, Rajagopal P, Roberts J, Piner E, Linthicum K. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors Journal of Electronic Materials. 37: 550-553. DOI: 10.1007/S11664-007-0298-Y |
0.628 |
|
| 2007 |
Allums K, Hlad M, Gerger A, Gila B, Abernathy C, Pearton S, Ren F, Dwivedi R, Fogarty T, Wilkins R. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes Journal of Electronic Materials. 36: 519-523. DOI: 10.1007/S11664-006-0035-Y |
0.692 |
|
| 2006 |
Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02 |
0.617 |
|
| 2006 |
Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03 |
0.569 |
|
| 2006 |
Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730 |
0.615 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Erratum: Band offsets in the Sc2O3∕GaN heterojunction system [Appl. Phys. Lett.
88, 142115
(2006)] Applied Physics Letters. 88: 249901. DOI: 10.1063/1.2213199 |
0.601 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Band offsets in the Sc2O3∕GaN heterojunction system Applied Physics Letters. 88: 142115. DOI: 10.1063/1.2194314 |
0.667 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 88: 042113. DOI: 10.1063/1.2170140 |
0.652 |
|
| 2006 |
Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018 |
0.655 |
|
| 2006 |
Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1 |
0.656 |
|
| 2006 |
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2 |
0.652 |
|
| 2006 |
Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9 |
0.733 |
|
| 2005 |
Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987 |
0.694 |
|
| 2004 |
Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, McElwee-White L. Tungsten nitride thin films deposited by MOCVD: Sources of carbon and effects on film structure and stoichiometry Journal of Crystal Growth. 261: 280-288. DOI: 10.1016/J.Jcrysgro.2003.11.018 |
0.309 |
|
| 2003 |
Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, Wilder CB, Powell DH, McElwee-White L. Cl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films Journal of Organometallic Chemistry. 684: 338-350. DOI: 10.1016/S0022-328X(03)00769-1 |
0.325 |
|
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