Year |
Citation |
Score |
2024 |
Shin JC, Jeong JH, Kwon J, Kim YH, Kim B, Woo SJ, Woo KY, Cho M, Watanabe K, Taniguchi T, Kim YD, Cho YH, Lee TW, Hone J, Lee CH, et al. Electrically Confined Electroluminescence of Neutral Excitons in WSe Light-emitting Transistors. Advanced Materials (Deerfield Beach, Fla.). e2310498. PMID 38169481 DOI: 10.1002/adma.202310498 |
0.525 |
|
2022 |
Jang J, Kim JK, Shin J, Kim J, Baek KY, Park J, Park S, Kim YD, Parkin SSP, Kang K, Cho K, Lee T. Reduced dopant-induced scattering in remote charge-transfer-doped MoS field-effect transistors. Science Advances. 8: eabn3181. PMID 36129985 DOI: 10.1126/sciadv.abn3181 |
0.32 |
|
2022 |
Luo M, Sun H, Qi Z, Lu K, Chen M, Kang D, Kim Y, Burt D, Yu X, Wang C, Kim YD, Wang H, Wang QJ, Nam D. Triaxially strained suspended graphene for large-area pseudo-magnetic fields. Optics Letters. 47: 2174-2177. PMID 35486753 DOI: 10.1364/OL.455569 |
0.333 |
|
2022 |
Kim H, Kim YD, Wu T, Cao Q, Herman IP, Hone J, Guo J, Shepard KL. Electroluminescence of atoms in a graphene nanogap. Science Advances. 8: eabj1742. PMID 35061537 DOI: 10.1126/sciadv.abj1742 |
0.488 |
|
2021 |
Hua X, Zhang D, Kim B, Seo D, Kang K, Yang EH, Hu J, Chen X, Liang H, Watanabe K, Taniguchi T, Hone J, Kim YD, Herman IP. Stabilization of Chemical-Vapor-Deposition-Grown WS Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation. Acs Applied Materials & Interfaces. PMID 34170658 DOI: 10.1021/acsami.1c06348 |
0.443 |
|
2020 |
Zimmermann JE, Kim YD, Hone JC, Höfer U, Mette G. Directional ultrafast charge transfer in a WSe/MoSe heterostructure selectively probed by time-resolved SHG imaging microscopy. Nanoscale Horizons. PMID 33084712 DOI: 10.1039/d0nh00396d |
0.458 |
|
2020 |
Kwon J, Shin JC, Ryu H, Lee JY, Seo D, Watanabe K, Taniguchi T, Kim YD, Hone J, Lee CH, Lee GH. Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure. Advanced Materials (Deerfield Beach, Fla.). e2003567. PMID 32914498 DOI: 10.1002/Adma.202003567 |
0.527 |
|
2019 |
Yang C, Lee JH, Jo M, Choi HK, Park S, Kim YD, Cho SU, Kim D, Park YD. Nanomachining-enabled strain manipulation of magnetic anisotropy in the free-standing GaMnAs nanostructures. Scientific Reports. 9: 13633. PMID 31541149 DOI: 10.1038/S41598-019-50115-1 |
0.562 |
|
2019 |
Shiue RJ, Gao Y, Tan C, Peng C, Zheng J, Efetov DK, Kim YD, Hone J, Englund D. Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity. Nature Communications. 10: 109. PMID 30631048 DOI: 10.1038/S41467-018-08047-3 |
0.503 |
|
2018 |
Ahmed F, Kim YD, Yang Z, He P, Hwang E, Yang H, Hone J, Yoo WJ. Impact ionization by hot carriers in a black phosphorus field effect transistor. Nature Communications. 9: 3414. PMID 30143622 DOI: 10.1038/S41467-018-05981-0 |
0.512 |
|
2018 |
Khan MA, Rathi S, Lee C, Lim D, Kim Y, Yun SJ, Youn DH, Kim GH. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS/WSe van der Waals Heterostructure. Acs Applied Materials & Interfaces. PMID 29938500 DOI: 10.1021/acsami.8b05549 |
0.318 |
|
2018 |
Kim YD, Gao Y, Shiue RJ, Wang L, Aslan OB, Bae MH, Kim H, Seo D, Choi HJ, Kim SH, Nemilentsau A, Low T, Tan C, Efetov DK, Taniguchi T, et al. Ultrafast Graphene Light Emitter. Nano Letters. PMID 29337567 DOI: 10.1021/Acs.Nanolett.7B04324 |
0.536 |
|
2017 |
Cui X, Shih EM, Jauregui LA, Chae SH, Kim YD, Li B, Seo D, Pistunova K, Yin J, Park JH, Choi HJ, Lee YH, Watanabe K, Taniguchi T, Kim P, et al. Low-temperature Ohmic contact to monolayer MoS2 by van der Waals bonded Co/h-BN electrodes. Nano Letters. PMID 28691487 DOI: 10.1021/Acs.Nanolett.7B01536 |
0.703 |
|
2017 |
Zhu H, Wang J, Gong Z, Kim YD, Hone JC, Zhu X. Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions. Nano Letters. PMID 28481550 DOI: 10.1021/Acs.Nanolett.7B00748 |
0.463 |
|
2017 |
Kim YD, Hone J. Materials Science: Screen printing of 2D semiconductors. Nature. PMID 28379948 DOI: 10.1038/Nature21908 |
0.458 |
|
2017 |
Cho MR, Jung JH, Seo MK, Cho SU, Kim YD, Lee JH, Kim YS, Kim P, Hone J, Ihm J, Park YD. Universality of periodicity as revealed from interlayer-mediated cracks. Scientific Reports. 7: 43400. PMID 28252036 DOI: 10.1038/Srep43400 |
0.596 |
|
2017 |
Kang K, Godin K, Kim YD, Fu S, Cha W, Hone J, Yang EH. Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric-Field Effect. Advanced Materials (Deerfield Beach, Fla.). PMID 28234414 DOI: 10.1002/Adma.201603898 |
0.525 |
|
2016 |
Gao J, Kim YD, Liang L, Idrobo JC, Chow P, Tan J, Li B, Li L, Sumpter BG, Lu TM, Meunier V, Hone J, Koratkar N. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. Advanced Materials (Deerfield Beach, Fla.). PMID 27646967 DOI: 10.1002/Adma.201601104 |
0.685 |
|
2016 |
Lee I, Rathi S, Lim D, Li L, Park J, Lee Y, Yi KS, Dhakal KP, Kim J, Lee C, Lee GH, Kim YD, Hone J, Yun SJ, Youn DH, et al. Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27619888 DOI: 10.1002/Adma.201601949 |
0.454 |
|
2015 |
Tsen AW, Hovden R, Wang D, Kim YD, Okamoto J, Spoth KA, Liu Y, Lu W, Sun Y, Hone JC, Kourkoutis LF, Kim P, Pasupathy AN. Structure and control of charge density waves in two-dimensional 1T-TaS2. Proceedings of the National Academy of Sciences of the United States of America. PMID 26598707 DOI: 10.1073/Pnas.1512092112 |
0.49 |
|
2015 |
Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. Acs Nano. PMID 26083310 DOI: 10.1021/Acsnano.5B01341 |
0.53 |
|
2015 |
Kim YD, Kim H, Cho Y, Ryoo JH, Park CH, Kim P, Kim YS, Lee S, Li Y, Park SN, Shim Yoo Y, Yoon D, Dorgan VE, Pop E, Heinz TF, et al. Bright visible light emission from graphene. Nature Nanotechnology. PMID 26076467 DOI: 10.1038/Nnano.2015.118 |
0.677 |
|
2015 |
Cui X, Lee GH, Kim YD, Arefe G, Huang PY, Lee CH, Chenet DA, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen BS, Watanabe K, Taniguchi T, Muller DA, et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nature Nanotechnology. 10: 534-40. PMID 25915194 DOI: 10.1038/Nnano.2015.70 |
0.522 |
|
2014 |
Li Y, Ludwig J, Low T, Chernikov A, Cui X, Arefe G, Kim YD, van der Zande AM, Rigosi A, Hill HM, Kim SH, Hone J, Li Z, Smirnov D, Heinz TF. Valley splitting and polarization by the Zeeman effect in monolayer MoSe2. Physical Review Letters. 113: 266804. PMID 25615372 DOI: 10.1103/Physrevlett.113.266804 |
0.447 |
|
2013 |
Kim YD, Bae MH, Seo JT, Kim YS, Kim H, Lee JH, Ahn JR, Lee SW, Chun SH, Park YD. Focused-laser-enabled p-n junctions in graphene field-effect transistors. Acs Nano. 7: 5850-7. PMID 23782162 DOI: 10.1021/Nn402354J |
0.633 |
|
2013 |
Kim YS, Lee JH, Kim YD, Jerng SK, Joo K, Kim E, Jung J, Yoon E, Park YD, Seo S, Chun SH. Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition. Nanoscale. 5: 1221-6. PMID 23299508 DOI: 10.1039/C2Nr33034B |
0.583 |
|
2008 |
Bak JH, Kim YD, Hong SS, Lee BY, Lee SR, Jang JH, Kim M, Char K, Hong S, Park YD. High-frequency micromechanical resonators from aluminium-carbon nanotube nanolaminates. Nature Materials. 7: 459-63. PMID 18425133 DOI: 10.1038/Nmat2181 |
0.552 |
|
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