| Year |
Citation |
Score |
| 1991 |
Deweerth SP, Nielsen L, Mead CA, Astrom KJ. A simple neuron servo. Ieee Transactions On Neural Networks / a Publication of the Ieee Neural Networks Council. 2: 248-51. PMID 18276378 DOI: 10.1109/72.80335 |
0.507 |
|
| 1991 |
Delbruck T, Mead CA. Time-derivative adaptive silicon photoreceptor array Proceedings of Spie - the International Society For Optical Engineering. 1541: 92-99. DOI: 10.1117/12.49323 |
0.516 |
|
| 1989 |
Maher MAC, Deweerth SP, Mahowald MA, Mead CA. Implementing Neural Architectures Using Analog VLSI Circuits Ieee Transactions On Circuits and Systems. 36: 643-652. DOI: 10.1109/31.31311 |
0.5 |
|
| 1976 |
McCaldin JO, McGill TC, Mead CA. Schottky barriers on compound semiconductors: The role of the anion Journal of Vacuum Science and Technology. 13: 802-806. DOI: 10.1116/1.568993 |
0.435 |
|
| 1976 |
McCaldin JO, McGill TC, Mead CA. Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity Physical Review Letters. 36: 56-58. DOI: 10.1103/Physrevlett.36.56 |
0.4 |
|
| 1976 |
Best JS, McCaldin JO, McGill TC, Mead CA, Mooney JB. HgSe, a highly electronegative stable metallic contact for semiconductor devices Applied Physics Letters. 29: 433-434. DOI: 10.1063/1.89109 |
0.446 |
|
| 1976 |
Scranton RA, Mooney JB, McCaldin JO, McGill TC, Mead CA. Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride Applied Physics Letters. 29: 47-48. DOI: 10.1063/1.88868 |
0.436 |
|
| 1976 |
Mead C, McGill T. Schottky barrier heights on p-type diamond and silicon carbide (6h) Physics Letters A. 58: 249-251. DOI: 10.1016/0375-9601(76)90088-8 |
0.431 |
|
| 1974 |
McGill TC, Mead CA. Electrical interface barriers Journal of Vacuum Science and Technology. 11: 122-127. DOI: 10.1116/1.1318540 |
0.448 |
|
| 1973 |
Mohsen A, McGill T, Mead C. Charge transfer in overlapping gate charge-coupled devices Ieee Journal of Solid-State Circuits. 8: 191-207. DOI: 10.1109/Jssc.1973.1050376 |
0.415 |
|
| 1973 |
Mohsen A, McGill T, Daimon Y, Mead C. The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices Ieee Journal of Solid-State Circuits. 8: 125-138. DOI: 10.1109/Jssc.1973.1050361 |
0.424 |
|
| 1973 |
Mohsen A, McGill T, Anthony M, Mead C. Push clocks: a new approach to charge‐coupled devices clocking Applied Physics Letters. 22: 172-175. DOI: 10.1063/1.1654600 |
0.407 |
|
| 1971 |
Kurtin SL, McGill TC, Mead CA. Direct Interelectrode Tunneling in GaSe Physical Review B. 3: 3368-3379. DOI: 10.1103/Physrevb.3.3368 |
0.441 |
|
| 1970 |
Kurtin S, McGill TC, Mead CA. Tunneling Currents and theE−kRelation Physical Review Letters. 25: 756-759. DOI: 10.1103/Physrevlett.25.756 |
0.444 |
|
| 1970 |
McGill TC, Kurtin S, Fishbone L, Mead CA. Contact‐Limited Currents in Metal‐Insulator‐Metal Structures Journal of Applied Physics. 41: 3831-3839. DOI: 10.1063/1.1659514 |
0.41 |
|
| 1968 |
Parker G, McGill T, Mead C, Hoffman D. Electric field dependence of GaAs Schottky barriers Solid-State Electronics. 11: 201-204. DOI: 10.1016/0038-1101(68)90079-8 |
0.438 |
|
| 1967 |
Thornber KK, McGill TC, Mead CA. The tunneling time of an electron Journal of Applied Physics. 38: 2384-2385. DOI: 10.1063/1.1709888 |
0.419 |
|
| 1966 |
Yariv A, Mead C, Parker J. 5C3 - GaAs as an electrooptic modulator at 10.6 microns Ieee Journal of Quantum Electronics. 2: 243-245. DOI: 10.1109/Jqe.1966.1074037 |
0.398 |
|
| 1966 |
Yariv A, Mead CA. Semiconductors as Electrooptic Modulators for Infrared Radiation Ieee Journal of Quantum Electronics. 2: 124. DOI: 10.1109/Jqe.1966.1073840 |
0.382 |
|
| Show low-probability matches. |
