Mario J. Olmedo, Ph.D.

Affiliations: 
2012 Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
learning and memory
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"Mario Olmedo"
Mean distance: 16.73 (cluster 6)
 
SNBCP

Parents

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li Liu grad student 2012 UC Riverside
 (Study of Nanocrystal Structures and Their Memory Applications.)
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Publications

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Qi J, Olmedo M, Zheng JG, et al. (2013) Multimode resistive switching in single ZnO nanoisland system. Scientific Reports. 3: 2405
Kong J, Chu S, Huang J, et al. (2013) Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28
Qi J, Olmedo M, Ren J, et al. (2012) Resistive switching in single epitaxial ZnO nanoislands. Acs Nano. 6: 1051-8
Ren J, Li B, Zheng JG, et al. (2012) Nonplanar NiSi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit Ieee Electron Device Letters. 33: 1390-1392
Zuo Z, Zhou H, Olmedo MJ, et al. (2012) Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy Journal of Applied Physics. 112
Kong J, Chu S, Zuo Z, et al. (2012) Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975
Qi J, Ren J, Olmedo M, et al. (2012) Unipolar resistive switching in Au/Cr/Mg 0.84Zn 0.16O 2.δ/p +-Si Applied Physics a: Materials Science and Processing. 107: 891-897
Olmedo M, Wang C, Ryu K, et al. (2011) Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes. Acs Nano. 5: 7972-7
Qi J, Zhang Q, Huang J, et al. (2011) Write-once-read-many-times memory based on ZnO on p-Si for long-time archival storage Ieee Electron Device Letters. 32: 1445-1447
Zhan N, Olmedo M, Wang G, et al. (2011) Graphene based nickel nanocrystal flash memory Applied Physics Letters. 99
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