Abhijit Pethe, Ph.D.

Affiliations: 
2007 Stanford University, Palo Alto, CA 
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"Abhijit Pethe"
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Krishna C. Saraswat grad student 2007 Stanford
 (Germanium-based transistors for high-performance logic applications.)
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Publications

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Lee A, Pethe A, Joshi A, et al. (2015) Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction 2014 Silicon Nanoelectronics Workshop, Snw 2014
Kuzum D, Pethe AJ, Krishnamohan T, et al. (2009) Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization Ieee Transactions On Electron Devices. 56: 648-655
Kuzum D, Krishnamohan T, Pethe A, et al. (2008) Ge interface passivation techniques and their thermal stability Ecs Transactions. 16: 1025-1029
Saraswat KC, Kim D, Krishnamohan T, et al. (2008) Germanium for high performance MOSFETs and optical interconnects Ecs Transactions. 16: 3-12
Kuzum D, Krishnamohan T, Pethe AJ, et al. (2008) Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330
Okyay AK, Pethe AJ, Kuzum D, et al. (2007) SiGe optoelectronic metal-oxide semiconductor field-effect transistor. Optics Letters. 32: 2022-4
Saraswat KC, Kim D, Krishnamohan T, et al. (2007) Performance limitations of Si bulk CMOS and alternatives for future ULSI Ecs Transactions. 8: 9-14
Okyay AK, Pethe AJ, Kuzum D, et al. (2007) Novel Si-based CMOS optoelectronic switching device operating in the near infrared Ofc/Nfoec 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007
Kuzum D, Pethe AJ, Krishnamohan T, et al. (2007) Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility Technical Digest - International Electron Devices Meeting, Iedm. 723-726
Pethe A, Saraswat K. (2007) High - Mobility, low parasitic resistance Si/Ge/Si heterostructure channel Schottky Source/Drain PMOSFETs 65th Drc Device Research Conference. 55-56
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