William Deal, Ph.D.
Affiliations: | 2000 | University of California, Los Angeles, Los Angeles, CA |
Area:
Electromagnetics, guided wave structures, lower-power wireless electronics, integrated passive components in antennas, photonic bandgap structures and metamaterial applications, RF technologies, sensors and transpondersGoogle:
"William Deal"Parents
Sign in to add mentor| Tatsuo Itoh | grad student | 2000 | UCLA | |
| (Advances in circuit and spatial power combining techniques.) | ||||
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Publications
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| Reck T, Zemora A, Schlecht E, et al. (2016) A 230 GHz MMIC-Based Sideband Separating Receiver Ieee Transactions On Terahertz Science and Technology. 6: 141-147 |
| Zamora A, Mei XB, Leong KMKH, et al. (2015) A ×18 340 GHz InP HEMT multiplier chain 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015 |
| Radisic V, Scott DW, Monier C, et al. (2015) InP HBT transferred substrate amplifiers operating to 600 GHz 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015 |
| Leong KMKH, Mei X, Yoshida W, et al. (2015) A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors Ieee Microwave and Wireless Components Letters. 25: 397-399 |
| Zamora A, Mei XB, Leong KMKH, et al. (2015) Advances in InP HEMT WR1.5 Amplifier MMICs 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015 |
| Reck T, Schlect E, Dengler R, et al. (2015) A 230GHz MMIC-based sideband separating receiver 26th International Symposium On Space Terahertz Technology, Isstt 2015 |
| Grossman EN, Leong K, Mei X, et al. (2014) Low-frequency noise and passive imaging with 670 GHz HEMT low-noise amplifiers Ieee Transactions On Terahertz Science and Technology. 4: 749-752 |
| Reck TJ, Deal W, Chattopadhyay G. (2014) Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz Ieee Mtt-S International Microwave Symposium Digest |
| Zamora A, Leong KMKH, Reck T, et al. (2014) A 170-280 GHz InP HEMT low noise amplifier International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz |
| Deal WR. (2013) THz sources using indium phosphide high electron mobility transistors Proceedings of Spie - the International Society For Optical Engineering. 8846 |